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Renesas Electronics Corporation
UPA2700GR-E1-A - Bulk (Alt: UPA2700GR-E1-A) UPA2700GR-E1-A ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet UPA2700GR-E1-A Bulk 0 1 Weeks 151 - - - $2.20745 $2.075 More Info
Rochester Electronics UPA2700GR-E1-A 42,500 1 $2.68 $2.68 $2.39 $2.18 $2.18 More Info
NEC Electronics Group
UPA2700GR-E1-A/JM(K) UPA2700GR-E1-A/JM(K) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange UPA2700GR-E1-A/JM(K) 1,293 - - - - - More Info
NEC Electronics Group
UPA2700GR-E1/JM(K) UPA2700GR-E1/JM(K) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange UPA2700GR-E1/JM(K) 1,951 - - - - - More Info
Renesas Electronics Corporation
UPA2700GR-E1-A(KS) UPA2700GR-E1-A(KS) ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange UPA2700GR-E1-A(KS) 2,686 - - - - - More Info

UPA2700 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
UPA2700 UPA2700 ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700GR UPA2700GR ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700GR-E1 UPA2700GR-E1 ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700GR-E2 UPA2700GR-E2 ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700TP UPA2700TP ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700TP-E1 UPA2700TP-E1 ECAD Model NEC Nch enhancement-type MOS FET Original PDF
UPA2700TP-E2 UPA2700TP-E2 ECAD Model NEC Nch enhancement-type MOS FET Original PDF

UPA2700 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - Not Available

Abstract: No abstract text available
Text: . + µPA2700 DC3.3 V Synchronous rectification control IC Surface Mount Package and , . DC 36 V to 75 V input Control IC µPC1909, etc. µPA2700 - Q Power MOSFET µPD1740TP


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PDF 2SK3634/2SK3635/ PA1740TP O-251 O-252 PC1909, PA2700 PD1740TP 2SK3634-Z 2SK3635-Z PC1093,
2004 - STF12A80

Abstract: BSTD1046 BSTC1026 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: No file text available


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PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTD1046 BSTC1026 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: No file text available


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
2001 - UPA2700

Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µPA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2700GR is N-Channel MOS Field Effect Transistor designed for DC/DC , INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 ­0.05 0.12 M µPA2700GR , NS CP(K) Printed in Japan 2 © 2001 µPA2700GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All , Information G15672EJ1V0PM µPA2700GR [MEMO] Preliminary Product Information G15672EJ1V0PM 3


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PDF PA2700GR PA2700GR UPA2700
2002 - PA2700TP

Abstract: PT137
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700TP which has a heat spreader is N-Channel 8 5 , . 2.0 ±0.2 PACKAGE 0.12 M 1.1 ±0.2 0.40 ORDERING INFORMATION µPA2700TP 4.4 ±0.15 , ) Printed in Japan The mark 5 shows major revised points. © 2002 µPA2700TP ELECTRICAL , ton td(off) tf toff µPA2700TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF , Resistance - m µPA2700TP 80 Pulsed Pulsed 70 ID - Drain Current - A ID - Drain Current - A


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PDF
2002 - PW-2N 150e

Abstract: No abstract text available
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700TP which has a heat spreader is N-Channel 8 5 , . 2.0 ±0.2 PACKAGE 0.12 M 1.1 ±0.2 0.40 ORDERING INFORMATION µPA2700TP 4.4  , (1st edition) Date Published February 2002 NS CP(K) Printed in Japan © 2002 µPA2700TP , Sheet G15851EJ1V0DS td(on) tr ton td(off) tf toff µPA2700TP TYPICAL CHARACTERISTICS , ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µPA2700TP 80


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PDF PA2700TP PA2700TP PW-2N 150e
2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 UPD16861 2SA733A
Text: No file text available


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PDF
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
2002 - PA2700GR

Abstract: UPA2700GR
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700GR is N-Channel MOS Field Effect Transistor 8 , +0.10 ­0.05 0.12 M PACKAGE µPA2700GR 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING , ) Printed in Japan The mark 5 shows major revised points. © 2002 µPA2700GR ELECTRICAL , µPA2700GR TYPICAL CHARACTERISTICS (TA = 25°C) 5 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA , 10 PW - Pulse Width - s Data Sheet G15672EJ2V0DS 100 1000 3 µPA2700GR DRAIN CURRENT


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PDF PA2700GR PA2700GR UPA2700GR
2002 - PA2700TP

Abstract: PT137
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700TP which has a heat spreader is N-Channel 8 5 , . 2.0 ±0.2 PACKAGE 0.12 M 1.1 ±0.2 0.40 ORDERING INFORMATION µPA2700TP 4.4 ±0.15 , ) Printed in Japan The mark 5 shows major revised points. © 2002 µPA2700TP ELECTRICAL , ton td(off) tf toff µPA2700TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF , Resistance - m µPA2700TP 80 Pulsed Pulsed 70 ID - Drain Current - A ID - Drain Current - A


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PDF PA2700TP PA2700TP PT137
2002 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2700GR is N-Channel MOS Field Effect Transistor 8 , +0.10 ­0.05 0.12 M PACKAGE µPA2700GR 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING , ) Printed in Japan The mark 5 shows major revised points. © 2002 µPA2700GR ELECTRICAL , µPA2700GR TYPICAL CHARACTERISTICS (TA = 25°C) 5 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA , 10 PW - Pulse Width - s Data Sheet G15672EJ2V0DS 100 1000 3 µPA2700GR DRAIN CURRENT


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PDF
REALTEK 1186

Abstract: EM329 BA3948 bh7880 WN0113 WN0103 M78A ICH4 ADP3205 WN0127
Text: No file text available


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PDF VB161AX IEEE1394 1/16W 2SC4617 2SC4617 2SK3019 REALTEK 1186 EM329 BA3948 bh7880 WN0113 WN0103 M78A ICH4 ADP3205 WN0127
NEC Tokin oe 907

Abstract: inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 motorola transistor R711 DFHM9007ZA CPD0307024C1 toshiba l850
Text: No file text available


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PDF CPD0307024C1 CF-18 CF-18BHKZXDM BLM21P600SG CF-18 SW955 EVQPLDA15 SW954 NEC Tokin oe 907 inverter nec tokin Tablet PC R116 schematic MITSUBISHI E100 nec tokin oe 128 CN702 motorola transistor R711 DFHM9007ZA CPD0307024C1 toshiba l850
d667 transistor

Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet diode tp806 tokin lcd inverter transistor k58 LM2729 D635 sot
Text: No file text available


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PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet diode tp806 tokin lcd inverter transistor k58 LM2729 D635 sot
2002 - PA2700GR

Abstract: PA2700
Text: DESCRIPTION The µPA2700GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power , Power SOP8 1.27 0.78 MAX. 0.40 +0.10 ­0.05 0.12 M µPA2700GR ABSOLUTE MAXIMUM RATINGS (TA = , Japan © 2002 µPA2700GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected , 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet G15672EJ1V0DS µPA2700GR , µPA2700GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 Pulsed 70 VGS = 10 V 60 50 40 30 20 10 0.01 0 1 2 3


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PDF PA2700GR PA2700GR PA2700
L9150

Abstract: L9101 L9100 c9015 D9150 ic905 C9013 S3V 83 IC-9002 INVENTEC FMNSY2-VP
Text: No file text available


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PDF 1/16W 950805BGT G36010116158 G36010119012 G36010116097 GDM010000035 G36030029124 G36030011099 L9150 L9101 L9100 c9015 D9150 ic905 C9013 S3V 83 IC-9002 INVENTEC FMNSY2-VP
2001 - UPA2700

Abstract: No abstract text available
Text: POWER MOS FET DESCRIPTION The µPA2700TP which has a heat spreader is N-Channel MOS Field Effect , HSOP8 2.0 ±0.2 2.9 MAX. 9 4.1 MAX. µPA2700TP 8 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 , EQUIVALENT CIRCUIT © 2001 µPA2700TP ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted , Information G15851EJ1V0PM µPA2700TP [MEMO] Preliminary Product Information G15851EJ1V0PM 3 µPA2700TP · The information contained in this document is being issued in advance of the production cycle


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PDF PA2700TP PA2700TP UPA2700
mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: No file text available


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PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
2002 - Not Available

Abstract: No abstract text available
Text: ) The µPA2700TP which has a heat spreader is N-Channel 8 5 MOS Field Effect Transistor designed , ±0.2 0.40 ORDERING INFORMATION µPA2700TP 4.4 ±0.15 0.15 S 1 PART NUMBER 6.0  , µPA2700TP ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted, All terminals are connected , Sheet G15851EJ2V0DS td(on) tr ton td(off) tf toff µPA2700TP TYPICAL CHARACTERISTICS , ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µPA2700TP 80


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PDF
K110 B3

Abstract: K105 transistor transistor k105 transistor C458 varistor 520 k14 Diode C84 009 transistor C639 pct303 g5020 3225 k50 varistor
Text: No file text available


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PDF CPD0212020C0 CF-T1R64ZZ1 65536/16M dots/1024 dots/1280 UNR9113J0L K110 B3 K105 transistor transistor k105 transistor C458 varistor 520 k14 Diode C84 009 transistor C639 pct303 g5020 3225 k50 varistor
2002 - Not Available

Abstract: No abstract text available
Text: ) The µPA2700GR is N-Channel MOS Field Effect Transistor 8 designed for DC/DC converters and power , PACKAGE µPA2700GR 4.4 5.37 MAX. 0.15 0.05 MIN. ORDERING INFORMATION 6.0 ±0.3 4 , ) Printed in Japan The mark 5 shows major revised points. © 2002 µPA2700GR ELECTRICAL , ton td(off) tf toff µPA2700GR TYPICAL CHARACTERISTICS (TA = 25°C) 5 DERATING FACTOR , Sheet G15672EJ2V0DS 100 1000 3 µPA2700GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE


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PDF
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
2004 - PA2753GR

Abstract: M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
Text: =1.53158E-05) * .ENDS uPA2700GR G17046JJ2V0IF 7 µ PA2700TP .SUBCKT uPA2700TP 1 2 3 , uPA2700GR 1 2 3 * * Model Generated by NEC Electronics Corporation , =1.53158E-05) * .ENDS uPA2700TP 8 G17046JJ2V0IF µ PA2701GR .SUBCKT uPA2701GR 1 2 3


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PDF PA27xx PA2700GR PA2700TP PA2701GR PA2701TP PA2702GR PA2702TP PA2706GR PA2706TP PA2710GR PA2753GR M02098 PA2719GR PA2702GR TC2-25 TT285-E PA2700TP PA2714GR m0452 241281
K2134

Abstract: transistor k314 3225 K30 NEC K2134 Transistor k221 K43E K294 transistor bipolar k72 K1MMZZB00002 ricoh fb5 front panel cn30
Text: No file text available


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PDF CPD0309020C1 CF-29 CF-29CTKGZ1M EN60825 CF-29 K2134 transistor k314 3225 K30 NEC K2134 Transistor k221 K43E K294 transistor bipolar k72 K1MMZZB00002 ricoh fb5 front panel cn30
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