The Datasheet Archive

UNR1119 datasheet (2)

Part Manufacturer Description Type PDF
UNR1119 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
UNR1119 Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF

UNR1119 Datasheets Context Search

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2003 - UNR1110

Abstract:
Text: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H , (Collector open) UNR1113 µA - 0.1 - 0.01 UNR1110/1115/1116/1117 UNR111F/111H -1.0 UNR1119 , UNR1118/111L 20 UNR1119 /111D/111F/111H Collector-emitter saturation voltage 460 30 VCE(sat , UNR1119 1 UNR111H 2.2 Resistance ratio UNR1111/1112/1113/111L R1/R2 0.8 1.0 , ) Characteristics charts of UNR1119 IC VCE VCE(sat) IC -100 Collector current IC (mA) -200 IB = -1.0


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
2003 - common collector PNP

Abstract:
Text: UNR1119 UNR111D UNR111E UNR111F UNR111H UNR111L 3.5±0.1 (0.4) · Costs can be reduced through , µA - 0.1 - 0.01 UNR1110/1115/1116/1117 UNR111F/111H -1.0 UNR1119 -1.5 UNR1118 , 20 UNR1119 /111D/111F/111H Collector-emitter saturation voltage 460 30 VCE(sat) IC = -10 , 22 UNR1110/1113/111D/111E 47 UNR1116/111F/111L 4.7 UNR1118 0.51 UNR1119 1 , ) Collector-base voltage VCB (V) Characteristics charts of UNR1119 IC VCE VCE(sat) IC -100 Collector


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
2001 - 1117 S Transistor

Abstract:
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , , IC = 0 ­ 0.01 UNR111F/111H ­1.0 UNR1119 ­1.5 UNR1118/111L ­2.0 Collector to , 4.7 UNR1118 (+30%) 0.51 UNR1119 1 UNR111H 2.2 UNR1111/1112/1113/111L 0.8 , Output current IO (mA) Characteristics charts of UNR1119 IC - VCE VCE(sat) - IC ­100


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
UNR1119

Abstract:
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , , IC = 0 ­ 0.01 UNR111F/111H ­1.0 UNR1119 ­1.5 UNR1118/111L ­2.0 Collector to , 4.7 UNR1118 (+30%) 0.51 UNR1119 1 UNR111H 2.2 UNR1111/1112/1113/111L 0.8 , Output current IO (mA) Characteristics charts of UNR1119 IC - VCE VCE(sat) - IC ­100


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 B 47k 1112 111d
2001 - 1117 S Transistor

Abstract:
Text: q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , , IC = 0 ­ 0.01 UNR111F/111H ­1.0 UNR1119 mA ­1.5 UNR1118/111L ­2.0 , (+30%) 0.51 UNR1119 1 UNR111H 2.2 UNR1111/1112/1113/111L 0.8 1.0 1.2 , Output current IO (mA) Characteristics charts of UNR1119 IC - VCE VCE(sat) - IC ­100


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
2003 - Not Available

Abstract:
Text: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F , UNR1110/1115/1116/1117 UNR111F/111H UNR1119 UNR1118/111L Forward current UNR1111 transfer ratio hFE VCE = , 20 460 UNR1119 /111D/111F/111H 30 Collector-emitter saturation voltage Output voltage high-level , /1113/111D/111E UNR1116/111F/111L UNR1118 UNR1119 47 4.7 0.51 1 UNR111H 2.2 UNR1114 UNR1118/1119 UNR111D , voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1119 IC


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PDF UNR111x UN111x UNR1110 UNR1111 UNR1112
2001 - UN1119

Abstract:
Text: Composite Transistors XN01119 (XN1119) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1119 (UN1119) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


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PDF XN01119 XN1119) UNR1119 UN1119) UN1119 XN01119 XN1119
UN1119

Abstract:
Text: Composite Transistors XN01119 (XN1119) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 ­0.05 1.9±0.1 0.16+0.10 ­0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 ­0.05 10° 1.1+0.2 ­0.1 s Basic Part Number of Element UNR1119 (UN1119) × 2 elements s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 0 to 0.1 q (Ta=25°C) Symbol Ratings Unit


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PDF XN01119 XN1119) UNR1119 UN1119) UN1119 XN01119 XN1119
2001 - UN1119

Abstract:
Text: Composite Transistors XP01119 (XP1119) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1119 (UN1119) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


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PDF XP01119 XP1119) UNR1119 UN1119) UN1119 XP01119 XP1119
UN1119

Abstract:
Text: Composite Transistors XP01119 (XP1119) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1119 (UN1119) × 2 elements 0 to 0.1 G 0.9±0.1 I Basic


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PDF XP01119 XP1119) UNR1119 UN1119) UN1119 XP01119 XP1119
2004 - UP04387

Abstract:
Text: ° Absolute Maximum Ratings Ta = 25°C Parameter 0.55±0.05 · UNR1119 + UNR1213 Tr1 0.10±0.02


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PDF UP04387 UP04387 UNR1119 UNR1213
2004 - UNR1119

Abstract:
Text: 1 Display at No.1 lead · UNR1119 + UNR1213 Tr1 4 (0.20) · Two elements


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PDF 2002/95/EC) UP04387 UNR1119 UNR1213 UP04387
2004 - Not Available

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits 6 (0.30) 5 4 0.20+0.05 ­0.02 Unit: mm 0.10±0.02 1.20±0.05 Basic Part Number · UNR1119 + UNR1213 Display at No.1 lead (0.20) · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1 2 3


Original
PDF 2002/95/EC) UP04387 UNR1119 UNR1213
2004 - Not Available

Abstract:
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04387 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits 6 (0.30) 5 4 0.20+0.05 ­0.02 Unit: mm 0.10±0.02 1.20±0.05 Basic Part Number · UNR1119 + UNR1213 Display at No.1 lead (0.20) · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1 2 3


Original
PDF 2002/95/EC) UP04387 UNR1119 UNR1213
2001 - UN1119

Abstract:
Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+ UNR1119 (UN1119) I Absolute Maximum Ratings Parameter 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and


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PDF XP04286 UNR221N UN221N) UNR1119 UN1119) UN1119 UN221N XP04286
2SC5936

Abstract:
Text: No file text available


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract:
Text: No file text available


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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