The Datasheet Archive

UNR1116 datasheet (5)

Part Manufacturer Description Type PDF
UNR1116 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
UNR1116 Panasonic Silicon PNP epitaxial planer transistor Original PDF
UNR1116Q Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF
UNR1116R Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF
UNR1116S Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF

UNR1116 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - common collector PNP

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
Text: Resistance by Part Number UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 , 22 UNR1110/1113/111D/111E 47 UNR1116 /111F/111L 4.7 UNR1118 0.51 UNR1119 1 , ) Collector-base voltage VCB (V) Characteristics charts of UNR1116 IC VCE VCE(sat) IC - 0.9 mA - 0.8


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
2003 - UNR1110

Abstract: UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
Text: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H , 1.2 22 UNR1110/1113/111D/111E 47 UNR1116 /111F/111L 4.7 UNR1118 0.51 , ) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR1116 IC VCE


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
2001 - 1117 S Transistor

Abstract: 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , MHz 10 UNR1112/1117 22 UNR1113/1110/111D/111E UNR1116 /111F/111L 47 (­30%) R1 , charts of UNR1116 IC - VCE VCE(sat) - IC IB=­1.0mA Collector current IC (mA) ­140 Ta


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
1117

Abstract: B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , MHz 10 UNR1112/1117 22 UNR1113/1110/111D/111E UNR1116 /111F/111L 47 (­30%) R1 , charts of UNR1116 IC - VCE VCE(sat) - IC IB=­1.0mA Collector current IC (mA) ­140 Ta


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
2001 - 1117 S Transistor

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
Text: q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , UNR1112/1117 22 UNR1113/1110/111D/111E UNR1116 /111F/111L 47 (­30%) R1 4.7 UNR1118 , ) ­1 ­3 ­10 ­30 ­100 Output current IO (mA) Characteristics charts of UNR1116 IC -


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
UN1116

Abstract: UNR1116 XP06116 XP6116
Text: Composite Transistors XP06116 (XP6116) Silicon PNP epitaxial planer transistor 5 4 q 0.2±0.1 5° s Features q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 6 Unit: mm (0.425) 0.2±0.05 For switching/digital circuits Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1116 (UN1116) × 2 elements s Absolute Maximum Ratings 0 to


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PDF XP06116 XP6116) UNR1116 UN1116) UN1116 XP06116 XP6116
UN1116

Abstract: UNR1116 XN01116 XN1116
Text: Composite Transistors XN01116 (XN1116) Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 4 5 2 2.8+0.2 ­0.3 3 1.50+0.25 ­0.05 q 5° s Features 0.16+0.10 ­0.06 0.4±0.2 For switching/digital circuits 1 (0.65) 0.30+0.10 ­0.05 UNR1116 (UN1116) × 2 elements


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PDF XN01116 XN1116) UNR1116 UN1116) UN1116 XN01116 XN1116
UN1116

Abstract: UNR1116 XN04116 XN4116
Text: Composite Transistors XN04116 (XN4116) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 5° 5 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1116 (UN1116


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PDF XN04116 XN4116) UNR1116 UN1116) UN1116 XN04116 XN4116
2001 - UN1116

Abstract: UNR1116 XN06116 XN6116
Text: +0.1 0.95 4 0.16­0.06 0.95 2 0.1 to 0.3 UNR1116 (UN1116) × 2 elements I Absolute


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PDF XN06116 XN6116) UN1116 UNR1116 XN06116 XN6116
UN1116

Abstract: UNR1116 XN06116 XN6116
Text: Composite Transistors XN06116 (XN6116) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 1 (0.65) G 5 0.16+0.10 ­0.06 1.50+0.25 ­0.05 4 I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1116 (UN1116


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PDF XN06116 XN6116) UNR1116 UN1116) UN1116 XN06116 XN6116
2003 - Not Available

Abstract: No abstract text available
Text: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F , /1113/111D/111E UNR1116 /111F/111L UNR1118 UNR1119 47 4.7 0.51 1 UNR111H 2.2 UNR1114 UNR1118/1119 UNR111D , current IO (mA) Characteristics charts of UNR1116 IC VCE IB = -1.0 mA -160 Ta = 25°C Collector


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PDF UNR111x UN111x UNR1110 UNR1111 UNR1112
2001 - UN1116

Abstract: UNR1116 XP06116 XP6116
Text: Composite Transistors XP06116 (XP6116) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1116 (UN1116) × 2 elements I Absolute Maximum Ratings +0.05 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


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PDF XP06116 XP6116) UNR1116 UN1116) UN1116 XP06116 XP6116
2001 - UN1116

Abstract: UNR1116 XP04116 XP4116
Text: Composite Transistors XP04116 (XP4116) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1116 (UN1116) × 2 elements I Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55


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PDF XP04116 XP4116) UNR1116 UN1116) UN1116 XP04116 XP4116
UN1116

Abstract: UNR1116 XP01116 XP1116
Text: Composite Transistors XP01116 (XP1116) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1116 (UN1116 )× 2 elements 0 to 0.1 G 0.9±0.1 I Basic


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PDF XP01116 XP1116) UNR1116 UN1116 UN1116 XP01116 XP1116
2001 - UN1116

Abstract: UNR1116 XN01116 XN1116
Text: Composite Transistors XN01116 (XN1116) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1116 (UN1116) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


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PDF XN01116 XN1116) UNR1116 UN1116) UN1116 XN01116 XN1116
2001 - UN1116

Abstract: UNR1116 XN04116 XN4116
Text: temperature 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1116 (UN1116) × 2 elements 5


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PDF XN04116 XN4116) UN1116 UNR1116 XN04116 XN4116
2001 - UN1116

Abstract: UNR1116 XP01116 XP1116
Text: Composite Transistors XP01116 (XP1116) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1116 (UN1116 )× 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


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PDF XP01116 XP1116) UNR1116 UN1116 UN1116 XP01116 XP1116
"s 0425"

Abstract: UN1116 UNR1116 XP04116 XP4116
Text: Composite Transistors XP04116 (XP4116) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s (0.425) Unit: mm For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1116 (UN1116) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


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PDF XP04116 XP4116) UNR1116 UN1116) "s 0425" UN1116 XP04116 XP4116
UN1116

Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Text: circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1216(UN1216) + UNR1116 (UN1116) I Absolute Maximum


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PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316
2002 - UN1116

Abstract: UN1216 UNR1116 UNR1216 UP04316
Text: Collector to base voltage Tr1 Symbol 0 to 0.02 · UNR1216 (UN1216) + UNR1116 (UN1116) 0.10 max


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PDF UP04316 UN1116 UN1216 UNR1116 UNR1216 UP04316
2001 - UN1116

Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
Text: Composite Transistors XN04316 (XN4316) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 ­0.3 +0.25 Parameter +0.1 3 +0.1 0.1 to 0.3 0.4±0.2 (Ta=25°C) 1.45±0.1 4 0.16­0.06 0.95 +0.2 0.95 +0.1 I Absolute Maximum Ratings 2.9 ­0.05 1.1­0.1 UNR1216(UN1216) + UNR1116 (UN1116) 2 0 to 0.05 G +0.2 I Basic Part Number of Element 5 0.8


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PDF XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316
UN1116

Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
Text: UNR1216(UN1216) + UNR1116 (UN1116) 0 to 0.1 q 0.9±0.1 s Basic Part Number of Element 0.9+0.2


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PDF XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316
2001 - UN1116

Abstract: UN1216 UNR1116 UNR1216 XP04316 XP4316
Text: Composite Transistors XP04316 (XP4316) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) + UNR1116 (UN1116) I Absolute Maximum Ratings Parameter +0.05 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting


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PDF XP04316 XP4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XP04316 XP4316
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: No file text available


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: No file text available


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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