The Datasheet Archive

UNR1114 datasheet (2)

Part Manufacturer Description Type PDF
UNR1114 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
UNR1114 Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF

UNR1114 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - common collector PNP

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
Text: Resistance by Part Number UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 , UNR111H 2.2 Resistance ratio UNR1111/1112/1113/111L R1/R2 0.8 1.0 UNR1114 0.17 , Characteristics charts of UNR1114 IC VCE VCE(sat) IC IB = -1.0 mA Collector current IC (mA) -120


Original
PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
UN1114

Abstract: UNR1114 XN04114 XN4114
Text: Composite Transistors XN04114 (XN4114) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 5° 5 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1114 (UN1114


Original
PDF XN04114 XN4114) UNR1114 UN1114) UN1114 XN04114 XN4114
2001 - 1117 S Transistor

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
Text: q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , UNR1114 Resistance ratio 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 R1/R2 , ) Characteristics charts of UNR1114 IC - VCE VCE(sat) - IC Ta=25°C Collector current IC (mA) ­140 IB


Original
PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
1117

Abstract: B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , 1.0 1.2 UNR1114 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 R1/R2 , ) Characteristics charts of UNR1114 IC - VCE VCE(sat) - IC Ta=25°C Collector current IC (mA) ­140 IB


Original
PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
2001 - 1117 S Transistor

Abstract: 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , 1.0 1.2 UNR1114 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 R1/R2 , ) Characteristics charts of UNR1114 IC - VCE VCE(sat) - IC Ta=25°C Collector current IC (mA) ­140 IB


Original
PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
2003 - UNR1110

Abstract: UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
Text: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H , UNR1114 0.17 0.21 0.25 UNR1118/1119 0.08 0.1 0.12 UNR111D 4.7 UNR111E , (mA) 5 UNR111x Series Characteristics charts of UNR1114 IC VCE VCE(sat) IC IB = -1.0


Original
PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
UN1114

Abstract: UNR1114 XN01114 XN1114
Text: Composite Transistors XN01114 (XN1114) Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 4 5 2 2.8+0.2 ­0.3 3 1.50+0.25 ­0.05 q 5° s Features 0.16+0.10 ­0.06 0.4±0.2 For switching/digital circuits 1 (0.65) 0.30+0.10 ­0.05 1.1+0.2 ­0.1 UNR1114


Original
PDF XN01114 XN1114) UNR1114 UN1114) UN1114 XN01114 XN1114
2007 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half Package Code SSMini5-F3 Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Basic Part Number UNR1114 + UNR1213 4: Collector (Tr2) 5


Original
PDF 2002/95/EC) UP03390G UNR1114 UNR1213
UN1114

Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 (XP1114) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114 (UN1114) × 2 elements I Absolute Maximum Ratings 0 to


Original
PDF XP01114 XP1114) UNR1114 UN1114) 50nductor UN1114 XP01114 XP1114
UN1114

Abstract: UNR1114 XN06114 XN6114
Text: Composite Transistors XN06114 (XN6114) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 1 (0.65) G 5 0.16+0.10 ­0.06 1.50+0.25 ­0.05 4 I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1114 (UN1114


Original
PDF XN06114 XN6114) UNR1114 UN1114) UN1114 XN06114 XN6114
2001 - UN1114

Abstract: UNR1114 XN06114 XN6114
Text: Junction temperature 1.45±0.1 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1114


Original
PDF XN06114 XN6114) UN1114 UNR1114 XN06114 XN6114
UN1114

Abstract: UNR1114 XP06114 XP6114
Text: Composite Transistors XP06114 (XP6114) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s (0.425) Unit: mm For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114 (UN1114) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


Original
PDF XP06114 XP6114) UNR1114 UN1114) UN1114 XP06114 XP6114
2001 - UN1114

Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 (XP1114) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1114 (UN1114) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


Original
PDF XP01114 XP1114) UNR1114 UN1114) UN1114 XP01114 XP1114
2001 - UN1114

Abstract: UNR1114 XP06114 XP6114 TR123
Text: Composite Transistors XP06114 (XP6114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1114 (UN1114) × 2 elements I Absolute Maximum Ratings +0.05 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


Original
PDF XP06114 XP6114) UNR1114 UN1114) UN1114 XP06114 XP6114 TR123
2001 - UN1114

Abstract: UNR1114 XP04114 XP4114
Text: Composite Transistors XP04114 (XP4114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1114 (UN1114) × 2 elements I Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55


Original
PDF XP04114 XP4114) UNR1114 UN1114) UN1114 XP04114 XP4114
XP04114

Abstract: XP4114 UN1114 UNR1114
Text: Composite Transistors XP04114 (XP4114) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 s Features q Unit: mm (0.425) For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114 (UN1114) × 2 elements s Absolute Maximum Ratings Parameter


Original
PDF XP04114 XP4114) UNR1114 UN1114) XP04114 XP4114 UN1114
2001 - UN1114

Abstract: UNR1114 XN01114 XN1114
Text: Composite Transistors XN01114 (XN1114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1114 (UN1114) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


Original
PDF XN01114 XN1114) UNR1114 UN1114) UN1114 XN01114 XN1114
2001 - UN1114

Abstract: UNR1114 XN04114 XN4114
Text: 1.45±0.1 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1114 (UN1114) × 2 elements 5


Original
PDF XN04114 XN4114) UNR1114 UN1114) UN1114 XN04114 XN4114
2004 - UNR1114

Abstract: UNR1213 UP04390
Text: Ratings Ta = 25°C Parameter 0.55±0.05 · UNR1114 + UNR1213 Tr1 0.10±0.02 (0.20) 5


Original
PDF UP04390 UNR1114 UNR1213 UP04390
2003 - Not Available

Abstract: No abstract text available
Text: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F , /1113/111D/111E UNR1116/111F/111L UNR1118 UNR1119 47 4.7 0.51 1 UNR111H 2.2 UNR1114 UNR1118/1119 UNR111D , IO (mA) SJH00001BED 5 UNR111x Series Characteristics charts of UNR1114 IC VCE


Original
PDF UNR111x UN111x UNR1110 UNR1111 UNR1112
2007 - UNR1114

Abstract: UNR1213 UP03390G
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Package elements incorporated into one package (Transistors with built-in resistor) Two Reduction of the mounting area and assembly cost by one half Code SSMini5-F3 Name Pin 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Basic Part Number UNR1114 + UNR1213 ue pl d in ea an c


Original
PDF 2002/95/EC) UP03390G UNR1114 UNR1213 UNR1114 UNR1213 UP03390G
2001 - UN1114

Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314
Text: 1.1­0.1 4 0.1 to 0.3 UNR1214(UN1214) + UNR1114 (UN1114) I Absolute Maximum Ratings 2 0 to


Original
PDF XN04314 XN4314) UN1114 UN1214 UNR1114 UNR1214 XN04314 XN4314
2002 - Not Available

Abstract: No abstract text available
Text: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) For digital circuits I Features · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1 2 3 (0.425) Unit: mm 0.12+0.05 ­0.02 0.20±0.05 5 4 1.25±0.10 2.1±0.1 (0.65) (0.65) 1.3±0.1 2.0±0.1 10° I Basic Part Number of Element · UNR1213 (UN1213) + UNR1114 (UN1114) 0.9±0.1


Original
PDF XP03390 UNR1213 UN1213) UNR1114 UN1114)
2001 - UN1114

Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314 XN04314XN4314
Text: circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1214(UN1214) + UNR1114 (UN1114) I Absolute Maximum


Original
PDF XN04314 XN4314) UNR1214 UN1214) UNR1114 UN1114) UN1114 UN1214 XN04314 XN4314 XN04314XN4314
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits 5 (0.30) 4 0.20 ­0.02 +0.05 0.10±0.02 1.20±0.05 · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1 1.00±0.05 1.60±0.05 Basic Part Number · UNR1114 + UNR1213 Display at


Original
PDF 2002/95/EC) UP03390 UNR1114 UNR1213
Supplyframe Tracking Pixel