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UNR1112 datasheet (2)

Part Manufacturer Description Type PDF
UNR1112 Panasonic Silicon PNP epitaxial planer transistor with biult-in resistor Original PDF
UNR1112 Panasonic Silicon PNP Epitaxial Planar Transistor Original PDF

UNR1112 Datasheets Context Search

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2003 - UNR1110

Abstract: UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
Text: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H , UNR1111 Conditions Min Typ Max Unit V V cutoff current UNR1112 /1114/111D/111E - 0.2 , hFE UNR1112 /111E 35 60 UNR1113/1114 80 UNR1110 */1115 */1116 */ 1117 * 160 , VCB = -10 V, IE = 2 mA, f = 200 MHz fT R1 80 -30% UNR1112 /1117 10 MHz +30% k , ) Input voltage VIN (V) Collector-base voltage VCB (V) Characteristics charts of UNR1112 VCE(sat


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) UNR1110 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111
2001 - 1117 S Transistor

Abstract: 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , Collector cutoff current VCE = ­50V, IB = 0 ­ 0.5 µA UNR1111 ­ 0.5 UNR1112 /1114/111E/111D , 50 V 50 V UNR1111 Forward current transfer ratio 35 UNR1112 /111E 60 , MHz 10 UNR1112 /1117 22 UNR1113/1110/111D/111E UNR1116/111F/111L 47 (­30%) R1 , Characteristics charts of UNR1112 IC - VCE VCE(sat) - IC ­100 Collector current IC (mA) ­140 ­120


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT UNR1119 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 1117
2003 - common collector PNP

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
Text: Resistance by Part Number UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 , Typ Max Unit V V cutoff current UNR1112 /1114/111D/111E - 0.2 (Collector open) UNR1113 , /111L -2.0 Forward current UNR1111 transfer ratio VCE = -10 V, IC = -5 mA hFE UNR1112 , -10 V, IE = 2 mA, f = 200 MHz fT R1 80 -30% UNR1112 /1117 10 MHz +30% k 1.2 , voltage VCB (V) Characteristics charts of UNR1112 VCE(sat) IC Ta = 25°C IB = -1.0 mA - 0.9 mA -


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PDF UNR111x UN111x UN1110) UN1111) UN1112) UN1113) UN1114) UN1115) UN1116) UN1117) common collector PNP UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR111D
1117

Abstract: B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
Text: q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , Collector cutoff current VCE = ­50V, IB = 0 ­ 0.5 µA UNR1111 ­ 0.5 UNR1112 /1114/111E/111D , 50 V 50 V UNR1111 Forward current transfer ratio 35 UNR1112 /111E 60 , MHz 10 UNR1112 /1117 22 UNR1113/1110/111D/111E UNR1116/111F/111L 47 (­30%) R1 , Characteristics charts of UNR1112 IC - VCE VCE(sat) - IC ­100 Collector current IC (mA) ­140 ­120


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 B 47k 1112 UNR1119 UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112
2001 - 1117 S Transistor

Abstract: UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
Text: q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 , Collector cutoff current VCE = ­50V, IB = 0 ­ 0.5 µA UNR1111 ­ 0.5 UNR1112 /1114/111E/111D , IC = ­2mA, IB = 0 50 V UNR1111 Forward current transfer ratio 35 UNR1112 /111E , UNR1112 /1117 22 UNR1113/1110/111D/111E UNR1116/111F/111L 47 (­30%) R1 4.7 UNR1118 , Characteristics charts of UNR1112 IC - VCE VCE(sat) - IC ­100 Collector current IC (mA) ­140 ­120


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PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1118 UNR1117 UNR1116 UNR1115 UNR1114 UNR1113 UNR1112 UNR1111 UNR1119
2003 - Not Available

Abstract: No abstract text available
Text: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F , cutoff current UNR1112 /1114/111D/111E (Collector open) UNR1113 M Di ain sc te on na tin nc ue e/ d , -10 V, IC = -5 mA 35 UNR1112 /111E UNR1113/1114 60 80 UNR1110 */1115 */1116 */ 1117 * UNR1118/111L 160 , , IE = 2 mA, f = 200 MHz 80 Input resistance UNR1111/1114/1115 UNR1112 /1117 R1 -30% 10 22 +30% UNR1110 , ) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1112 IC VCE -160


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PDF UNR111x UN111x UNR1110 UNR1111 UNR1112
UN1112

Abstract: UNR1112 XP06112 XP6112
Text: Composite Transistors XP06112 (XP6112) Silicon PNP epitaxial planer transistor Unit: mm (0.425) For switching/digital circuits 0.2±0.05 6 q 1 2 3 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 4 Features 1.25±0.10 2.1±0.1 s 5 0.12+0.05 ­0.02 (0.65) (0.65) 1.3±0.1 2.0±0.1 0.9±0.1 s Basic Part Number of Element UNR1112 (UN1112) × 2


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PDF XP06112 XP6112) UNR1112 UN1112) UN1112 XP06112 XP6112
UN1112

Abstract: UNR1112 XN06112 XN6112
Text: Composite Transistors XN06112 (XN6112) Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 1.50+0.25 ­0.05 6 1 (0.65) G 5 0.16+0.10 ­0.06 5° 4 I Features G Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1112 (UN1112


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PDF XN06112 XN6112) UNR1112 UN1112) UN1112 XN06112 XN6112
2009 - UNR1112

Abstract: XP01112
Text: This product complies with the RoHS Directive (EU 2002/95/EC). XP01112 Silicon PNP epitaxial planar type For digital circuits Features Package Code SMini5-G1 Name Pin 1: Base (Tr1) 2: Emitter 3: Base (Tr2) Basic Part Number UNR1112 × 2 Absolute Maximum Ratings Ta = 25°C Parameter 4: Collector (Tr2) 5: Collector (Tr1) ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


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PDF 2002/95/EC) XP01112 UNR1112 UNR1112 XP01112
2001 - UN1112

Abstract: UNR1112 XN06112 XN6112
Text: Junction temperature 1.45±0.1 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1112


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PDF XN06112 XN6112) UN1112 UNR1112 XN06112 XN6112
2001 - Not Available

Abstract: No abstract text available
Text: Composite Transistors XP01112 (XP1112) Silicon PNP epitaxial planer transistor For switching/digital circuits (0.425) Unit: mm 0.12+0.05 ­0.02 0.20±0.05 5 4 1.25±0.10 2.1±0.1 1 2 3 G (0.65) (0.65) 1.3±0.1 2.0±0.1 10° 0.9±0.1 G UNR1112 (UN1112) × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol


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PDF XP01112 XP1112) UNR1112 UN1112)
2001 - UN1112

Abstract: UNR1112 XP01112 XP1112
Text: Composite Transistors XP01112 (XP1112) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1112 (UN1112) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


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PDF XP01112 XP1112) UNR1112 UN1112) UN1112 XP01112 XP1112
2001 - UN1112

Abstract: UNR1112 XP06112 XP6112
Text: Composite Transistors XP06112 (XP6112) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1112 (UN1112) × 2 elements I Absolute Maximum Ratings +0.05 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


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PDF XP06112 XP6112) UNR1112 UN1112) UN1112 XP06112 XP6112
UN1112

Abstract: UNR1112 XP04112 XP4112
Text: Composite Transistors XP04112 (XP4112) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 s Features q Unit: mm (0.425) For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1112 (UN1112) × 2 elements s Absolute Maximum Ratings 0 to


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PDF XP04112 XP4112) UNR1112 UN1112) UN1112 XP04112 XP4112
2001 - UN1112

Abstract: UNR1112 XN01112 XN1112
Text: Composite Transistors XN01112 (XN1112) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1112 (UN1112) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


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PDF XN01112 XN1112) UNR1112 UN1112) UN1112 XN01112 XN1112
UN1112

Abstract: UNR1112 XN01112 XN1112
Text: Composite Transistors XN01112 (XN1112) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 ­0.05 1.9±0.1 0.16+0.10 ­0.06 (0.95) (0.95) 2 1 10° 1.1+0.2 ­0.1 s Basic Part Number of Element 0 to 0.1 UNR1112 (UN1112) × 2 elements s Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 ­50 V IC


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PDF XN01112 XN1112) UNR1112 UN1112) UN1112 XN01112 XN1112
UN1112

Abstract: UNR1112 XN04112 XN4112
Text: Composite Transistors XN04112 (XN4112) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 5° 5 Features 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1112 (UN1112


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PDF XN04112 XN4112) UNR1112 UN1112) UN1112 XN04112 XN4112
2001 - UN1112

Abstract: UN1212 UNR1112 UNR1212 XP03312
Text: Composite Transistors XP03312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 G 0.65 2.0±0.1 2 Parameter 5 4 +0.05 0.12 ­ 0.02 0.2 UNR1212(UN1212)+ UNR1112 (UN1112) I Absolute Maximum Ratings 0.425 0 to 0.1 I Basic Part Number of Element 1 3 0.9± 0.1 G Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) Reduction of the


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PDF XP03312 UNR1212 UN1212) UNR1112 UN1112) UN1112 UN1212 XP03312
UN1112

Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
Text: circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1212(UN1212) + UNR1112 (UN1112) I Absolute Maximum


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PDF XN04312 XN4312) UNR1212 UN1212) UNR1112 UN1112) UN1112 UN1212 XN04312 XN4312
2008 - Not Available

Abstract: No abstract text available
Text: · UNR1112 + UNR1212 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) Absolute Maximum Ratings


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PDF 2002/95/EC) UP03312G UNR1112 UNR1212
UN1112

Abstract: UNR1112 XP01112 XP1112
Text: Composite Transistors XP01112 (XP1112) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1112 (UN1112) × 2 elements I Absolute Maximum Ratings 0 to


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PDF XP01112 XP1112) UNR1112 UN1112) 50nductor UN1112 XP01112 XP1112
2001 - UN1112

Abstract: UNR1112 XN04112 XN4112
Text: temperature 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1112 (UN1112) × 2 elements 5


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PDF XN04112 XN4112) UN1112 UNR1112 XN04112 XN4112
2001 - UN1112

Abstract: UNR1112 XP04112 XP4112
Text: Composite Transistors XP04112 (XP4112) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 +0.05 UNR1112 (UN1112) × 2 elements I Absolute Maximum Ratings 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


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PDF XP04112 XP4112) UNR1112 UN1112) UN1112 XP04112 XP4112
2008 - UNR1112

Abstract: UNR1212 UP03312G
Text: Number · UNR1112 + UNR1212 Parameter Symbol Collector current Collector-base voltage


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PDF 2002/95/EC) UP03312G UNR1112 UNR1212 UP03312G
2004 - UNR1112

Abstract: UNR1212 UP03312
Text: Storage temperature 0.10 max 0.55±0.05 Display at No.1 lead · UNR1112 + UNR1212 Tr1


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PDF UP03312 UNR1112 UNR1212 UP03312
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