The Datasheet Archive

UN8231 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
UN8231 UN8231 ECAD Model Panasonic NPN Transistor with built-in Resistor Original PDF
UN8231 UN8231 ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN8231 UN8231 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
UN8231 UN8231 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
UN8231A UN8231A ECAD Model Panasonic Silicon NPN Transistor with integrated resistor Original PDF
UN8231A UN8231A ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN8231A UN8231A ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
UN8231A UN8231A ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

UN8231 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - UN823

Abstract: UN8231 UN8231A
Text: Transistors with built-in Resistor UN8231 / UN8231A Silicon NPN epitaxial planer transistor Unit , base voltage Symbol UN8231 Ratings 20 VCBO UN8231A UN8231 Collector to emitter voltage UN8231A +0.1 3 (Ta=25°C) Unit 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package , , IB = 5mA Input resistance R1 20 Collector to emitter voltage UN8231A UN8231 UN8231A , current Collector to base voltage UN8231 VCBO IC = 10µA, IE = 0 VCEO IC = 1mA, IB = 0


Original
PDF UN8231/UN8231A UN8231 UN8231A UN823 UN8231 UN8231A
1k MT

Abstract: ml5212 UN6211 UN6115 UN6114 IM6114 UN6112 UN6110 UN5219 UN5217
Text: BN8213A föT SW 60 50 0. 7 1 1 15 800 2100 10 0.15 0.4 0.5 0. 005 UN8231 föT Digital 20 20 0. 7 1 1 , * 10 -0.05 R1/R2 IK/4. 7K (MT-2) ECB/R UN8231


OCR Scan
PDF N5216 UN5217 UN5218 UN5219 UN6110 UN6214 UN6215 UN6216 UN6217 51K/5 1k MT ml5212 UN6211 UN6115 UN6114 IM6114 UN6112
un4211 equivalent

Abstract: UN8000 UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
Text: €” UN1231"2 — — — — — — — — — — UN7231 - UN8231 — — 20 700 800 10 150 1 47 - UN1231 A*2 - - - — — - - — - - — - UN8231A - - 50 700 800 10 150 10 500 — — UN2154 — — â


OCR Scan
PDF UN1000 UN2000 UN2000T UN4000 UN5000 UN6000 UN7000 UN8000 UN9000 400mW, un4211 equivalent UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: 47 - - UNR5227 - UN7231 - - UN8231 U N 8231A _ 20 50 -3 0 700 700 -1 0 0


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PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
2004 - Not Available

Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR8231/8231A ( UN8231 /8231A) Silicon NPN epitaxial planar type Unit: mm For switching Features · High forward current transfer ratio hFE · Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts · Available in a type with radial taping 0.7 6.9±0.1 4.0 (1.0) (0.2) 4.5±0.1 2.5±0.1 (0.8) (0.5) M Di ain sc te on na tin nc ue e/ d (1.0) 0.65 max. Absolute Maximum Ratings Ta = 25°C Parameter


Original
PDF UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231A
2001 - UNR8231

Abstract: UNR8231A
Text: Transistors with built-in Resistor UNR8231/UNR8231A ( UN8231 / UN8231A ) Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 G 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping. 1.0 1.0 G 0.2 I Features G (1.45) 0.5 4.5±0.1 0.15 For switching +0.1 0.45­0.05


Original
PDF UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A
2004 - UNR8231

Abstract: UNR8231A
Text: Transistors with built-in Resistor UNR8231/8231A ( UN8231 /8231A) Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Features 0.65 max. 14.5±0.5 (1.0) · High forward current transfer ratio hFE · Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts · Available in a type with radial taping (0.5) For switching Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base


Original
PDF UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231 UNR8231A
UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: 100 70 5 50 17 47 47 - _ UN1231 2 UN1231A'2 - - UN7231 - - UN8231 UN8231A 20 50 -3 0 700 700 -1 0 0 800 800 10 10 -1 0 150 150 -5 ! 10 - UN2154


OCR Scan
PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
2004 - UNR8231

Abstract: UNR8231A
Text: Transistors with built-in Resistor UNR8231/8231A ( UN8231 /8231A) Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d (1.0) (0.2) 4.5±0.1 0.7 Features 0.65 max. 14.5±0.5 (1.0) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c


Original
PDF UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A
UNR8231

Abstract: UNR8231A
Text: Transistors with built-in Resistor UNR8231/UNR8231A ( UN8231 / UN8231A ) Silicon NPN epitaxial planer transistor Unit: mm 0.7 I Absolute Maximum Ratings Parameter Collector to base voltage (Ta=25°C) Symbol UNR8231 UNR8231A UNR8231 Collector to emitter voltage UNR8231A (0.5) 2.5±0.5 2.5±0.5 1 20 0.45+0.10 ­0.05 1.05±0.05 1 : Emitter 2 : Collector 3 : Base MT-2-A1 Package V 60 2 3 V 50 ICP Collector current Unit 20 VCEO Peak


Original
PDF UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: PU4151 · UN7000 Series UN7231 Mini Power 3 140 PU3123 PU3124 PU3127 · UN8000 Series UN8231 /A MT2


OCR Scan
PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


OCR Scan
PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
YTS2222A

Abstract: YTS3904 YTS3905 YTS3903 YTS2222 UN9217 YTS4125 SC-59 YTS2907 YTS2221A
Text: - 348 - a « f± « ffl jé (Ta=25tC, *EPttTc=25TI) M % M » tt (Ta=25t5) MPHtyp® VcBO (V) VcEO (V) lei DC) (A) Pc (W) Pc* (W) icbo (max) (nk) VCB (V) (min) (max) Vce (V) 1C/IE (A) (»ax) (V) (V) Ic (A) In (A) UN8231A KST Digital 60 60 0. 7 1 1 15 800 2100 10 0.15 0.4 0. 5 0.005 UN9110 t&T SW -50 -50 -0. 1 0.125 -0.1 -50 160 460 -10 -0. 005 -0. , ) « % (MHz) 5 S tt ai s & ft 200» 10 -0.05 R1/R2 1K/4. 7K (MT-2) ECB/R UN8231A


OCR Scan
PDF UN8231A UN9110 UN9111 UN9113 UN9114 003ax SC-59) YTS2222A YTS2221 SC-59 YTS2222A YTS3904 YTS3905 YTS3903 YTS2222 UN9217 YTS4125 YTS2907 YTS2221A
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