The Datasheet Archive

UN121F datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
UN121F UN121F ECAD Model Panasonic Silicon NPN Transistor with integrated resistor Original PDF
UN121F UN121F ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN121F UN121F ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
UN121F UN121F ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

UN121F Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SC59A

Abstract: SC-59A RT1N441C RT1P441M RT1P441S RT1P441C UN111H UN112X UN112Y UN121D
Text: 0.25 0.01 0.0003 UN121E «ST Dig tal 50 50 0.1 0.4 0.1 50 60 10 0. 005 0.25 0.01 0.0003 UN121F , R1/R2 4.7K/10K UN121F (M Type) BCE, R UN111F 80* -10 0. 002 R1/R2 2. 2K/10K (M Type) BCE/R , R1/R2 4.7K/10K UN111F (M Type) BCE, R UN121F 8u* 10 0. 0002 R1/R2 10K/4.7K (Ìli Type) BCE/n


OCR Scan
PDF RT1P134S RT1P441C T1P441M RT1P441S N111D UN111E SC-59A UN212Y 47K/10K UN211D SC59A RT1N441C RT1P441M UN111H UN112X UN112Y UN121D
1998 - UN1219

Abstract: UN1212 UN1218 UN1217 UN1216 UN1215 UN1214 UN1213 UN1211 UN1210
Text: UN1210 UN121D UN121E UN121F UN121K UN121L (R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k , IEBO VEB = 6V, IC = 0 0.01 UN121F /121K 1.0 UN1219 mA 1.5 UN1218/121L 2.0 , UN1213/1214 80 UN1215*/1216*/1217*/1210* hFE VCE = 10V, IC = 5mA UN121F /121D/1219 160 , 0.08 R1/R2 UN121D 4.7 UN121E 2.14 UN121F 0.47 UN121K 2.13 * hFE rank , 30 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN121F IC


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PDF 121D/121E/121F/121K/121L UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 UN1217 UN1218 UN1219 UN1219 UN1212 UN1218 UN1217 UN1216 UN1215 UN1214 UN1213 UN1211 UN1210
1998 - UN121F

Abstract: XN421F
Text: Maximum Ratings Parameter 2 0.8 +0.2 UN121F × 2 elements 5 0.95 2.9 ­0.05 +0.2 s


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PDF XN421F UN121F XN421F
1998 - UN121F

Abstract: XN121F
Text: Composite Transistors XN121F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UN121F × 2 elements +0.1 +0.2 1.1 -0.1 q 0.8 s Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and


Original
PDF XN121F UN121F UN121F XN121F
un4211 equivalent

Abstract: UN8000 UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
Text: 60 4.7 10 UN111F UN121F UN211F UN221F UN211 FT UN221FT UN411F UN421F UN511F UN521F UN611F UN621F â


OCR Scan
PDF UN1000 UN2000 UN2000T UN4000 UN5000 UN6000 UN7000 UN8000 UN9000 400mW, un4211 equivalent UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: UN1210 UN121D UN121E UN121F NPN UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2210


OCR Scan
PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
XN42

Abstract: UN121F UNR121F XN0421F XN421F
Text: Composite Transistors XN0421F (XN421F) Silicon NPN epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 5° 5 Features 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR121F( UN121F


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PDF XN0421F XN421F) UNR121F UN121F) XN42 UN121F XN0421F XN421F
equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: UN1215 UN1216 UN1217 UN1218 UN1219 UN1210 UNI121D UN121E UN121F - UN121K UN121L - - - NPN UN2211


OCR Scan
PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
2001 - UN121F

Abstract: UNR121F XN0421F XN421F
Text: I Absolute Maximum Ratings 0.95 2.9 ­0.05 1.1­0.1 UNR121F( UN121F ) × 2 elements 2 0


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PDF XN0421F XN421F) UN121F UNR121F XN0421F XN421F
2001 - UN121F

Abstract: UNR121F XN0121F XN121F
Text: Composite Transistors XN0121F (XN121F) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR121F( UN121F ) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


Original
PDF XN0121F XN121F) UNR121F UN121F) UN121F XN0121F XN121F
UN121F

Abstract: UNR121F XN0121F XN121F
Text: Composite Transistors XN0121F (XN121F) Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) G 5 2 1 (0.65) 0.30+0.10 ­0.05 10° 1.1+0.2 ­0.1 I Basic Part Number of Element UNR121F( UN121F ) × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 0 to 0.1 G 2.8+0.2 ­0.3 4 1.50+0.25 ­0.05 3 Two elements incorporated into one


Original
PDF XN0121F XN121F) UNR121F UN121F) UN121F XN0121F XN121F
2003 - UNR1210

Abstract: UNR1219 UNR1218 UNR1217 UNR1216 UNR1215 UNR1214 UNR1213 UNR1212 UNR1211
Text: Transistors with built-in Resistor UNR121x Series (UN121x Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 10 k 4.7 k (UN1210) (UN1211) (UN1212) (UN1213) (UN1214) (UN1215) (UN1216) (UN1217) (UN1218) (UN1219) (UN121D) (UN121E) ( UN121F ) (UN121K) (UN121L) (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k


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PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1219 UNR1218 UNR1217 UNR1216 UNR1215 UNR1214 UNR1213 UNR1212 UNR1211
2003 - Not Available

Abstract: No abstract text available
Text: ) (UN1219) (UN121D) (UN121E) ( UN121F ) (UN121K) (UN121L) (R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k


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PDF UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213
2003 - UNR1210

Abstract: UNR1219 UNR1218 UNR1217 UNR1216 UNR1215 UNR1214 UNR1213 UNR1212 UNR1211
Text: ) (UN1218) (UN1219) (UN121D) (UN121E) ( UN121F ) (UN121K) (UN121L) 4.5±0.1 R 0.9 R 0.7


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PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1219 UNR1218 UNR1217 UNR1216 UNR1215 UNR1214 UNR1213 UNR1212 UNR1211
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: No file text available


Original
PDF
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: UN1215 UN1216 UN1217 UN1218 UN1219 UN121D UN121E UN121F UN121K UN121L UN1221 UN1222 UN1223 UN1224 UN1231


OCR Scan
PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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