The Datasheet Archive

UN1210 datasheet (10)

Part ECAD Model Manufacturer Description Type PDF
UN1210 UN1210 ECAD Model Panasonic Silicon NPN Transistor with integrated resistor Original PDF
UN1210 UN1210 ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN1210 UN1210 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
UN1210 UN1210 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
UN1210Q UN1210Q ECAD Model Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
UN1210-Q UN1210-Q ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN1210R UN1210R ECAD Model Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
UN1210-R UN1210-R ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF
UN1210S UN1210S ECAD Model Panasonic TRANS GP BJT NPN 50V 0.1A 3M Original PDF
UN1210-S UN1210-S ECAD Model Panasonic Silicon NPN epitaxial planer transistor Original PDF

UN1210 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
UN1219

Abstract: UN1211 UN921L UN921K UN921F UN921E UN1115 UN1113 UN1111 UN1110
Text: UN1210 (M Type) BCE.R UN1110 R1/R2 10K/10K UN1211 (M Type) BCE.R UN1111 R1/R2 22K/22K , RI 47K UN1110 (M Type) BCE.R UN1210 R1/R2 10K/10K UN1111 (M Type) BCE.R UN1211 R1


OCR Scan
PDF UN921E UN921F UN921K UN921L UN1110 UN1111 UN1213 10K/47K UNI114 UN1214 UN1219 UN1211 UN1115 UN1113
1998 - XP2210

Abstract: UN1210
Text: Composite Transistors XP2210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UN1210 × 2 elements 0 to 0.1 q 0.7±0.1 s Basic Part Number of Element 0.12 ­ 0.02 0.2 q Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 q 0.65 s Features 0.65


Original
PDF XP2210 UN1210 XP2210 UN1210
1998 - UN1210

Abstract: XN2210
Text: Composite Transistors XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UN1210 × 2 elements +0.1 +0.2 1.1 -0.1 q 0.8 s Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 q Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly


Original
PDF XN2210 UN1210 UN1210 XN2210
1998 - UN1210

Abstract: XN1210
Text: Composite Transistors XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 0.3 -0.05 2 +0.1 0 to 0.1 UN1210 × 2 elements s Absolute Maximum Ratings 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC


Original
PDF XN1210 UN1210 UN1210 XN1210
1998 - UN1210

Abstract: XP4210
Text: Composite Transistors XP4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1210 × 2 elements s Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55 to +150 0.2±0.1


Original
PDF XP4210 UN1210 UN1210 XP4210
equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: UN1215 UN1216 UN1217 UN1218 UN1219 UN1210 UNI121D UN121E UN121F - UN121K UN121L - - - NPN UN2211


OCR Scan
PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
1998 - UN1210

Abstract: XP6210
Text: Composite Transistors XP6210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 +0.05 UN1210 × 2 elements 0 to 0.1 q 0.12 ­0.02 s Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 q 0.425 0.65 s Features 1.25±0.1 0.65 0.425 0.2±0.05


Original
PDF XP6210 UN1210 UN1210 XP6210
1998 - UN1210

Abstract: XN4210
Text: temperature 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UN1210 × 2 elements 5 0.8


Original
PDF XN4210 UN1210 XN4210
1998 - UN1210

Abstract: XP1210
Text: Composite Transistors XP1210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UN1210 × 2 elements 0 to 0.1 q 0.7±0.1 s Basic Part Number of Element 0.12 ­ 0.02 0.2 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 q 0.65 s


Original
PDF XP1210 UN1210 UN1210 XP1210
un4211 equivalent

Abstract: UN8000 UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
Text: UN6119 UN6219 — — - UN9119 UN9219 30 47 « UN1110 UN1210 UN2110 UN2210 UN2110T UN2210T UN4110


OCR Scan
PDF UN1000 UN2000 UN2000T UN4000 UN5000 UN6000 UN7000 UN8000 UN9000 400mW, un4211 equivalent UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: UN1210 UN121D UN121E UN121F NPN UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2210


OCR Scan
PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
UN1210

Abstract: UNR1210 XP01210 XP1210
Text: Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1210( UN1210 ) × 2 elements I Absolute Maximum Ratings 0 to


Original
PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210
UN1210

Abstract: UNR1210 XP06210 XP6210 XP621
Text: Composite Transistors XP06210 (XP6210) Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s (0.425) Unit: mm For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1210( UN1210 ) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


Original
PDF XP06210 XP6210) UNR1210 UN1210) UN1210 XP06210 XP6210 XP621
2001 - Not Available

Abstract: No abstract text available
Text: Composite Transistors XN02210 (XN2210) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) 3 4 5 1.50+0.25 ­0.05 2.8+0.2 ­0.3 0.16+0.10 ­0.06 I Features G G M Di ain sc te on na tin nc ue e/ d 2 1 10° 1.1+0.2 ­0.1 G UNR1210( UN1210 ) × 2 elements I Absolute Maximum Ratings Parameter Symbol VCBO VCEO IC PT Tj Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power


Original
PDF XN02210 XN2210) UNR1210 UN1210)
2001 - UN1210

Abstract: UNR1210 XP01210 XP1210
Text: Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1210( UN1210 ) × 2 elements I Absolute Maximum Ratings 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and


Original
PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210
2001 - UN1210

Abstract: UNR1210 XP06210 XP6210
Text: Composite Transistors XP06210 (XP6210) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 +0.05 UNR1210( UN1210 ) × 2 elements I Absolute Maximum Ratings 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


Original
PDF XP06210 XP6210) UNR1210 UN1210) UN1210 XP06210 XP6210
2001 - UN1210

Abstract: UNR1210 XN02210 XN2210
Text: 2.8+0.2 ­0.3 For switching/digital circuits UNR1210( UN1210 ) × 2 elements 0 to 0.1 G


Original
PDF XN02210 XN2210) UN1210 UNR1210 XN02210 XN2210
panasonic VF-8Z

Abstract: UN1210 UNR1210 XP04210 XP4210
Text: Composite Transistors XP04210 (XP4210) Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s (0.425) Unit: mm For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1210( UN1210 ) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


Original
PDF XP04210 XP4210) UNR1210 UN1210) panasonic VF-8Z UN1210 XP04210 XP4210
2001 - panasonic VF-8Z

Abstract: UN1210 UNR1210 XN04210 XN4210
Text: temperature 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1210( UN1210 ) × 2 elements 5


Original
PDF XN04210 XN4210) panasonic VF-8Z UN1210 UNR1210 XN04210 XN4210
XN421

Abstract: UN1210 UNR1210 XN04210 XN4210 panasonic VF-8Z
Text: Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 5° 5 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1210( UN1210


Original
PDF XN04210 XN4210) UNR1210 UN1210) XN421 UN1210 XN04210 XN4210 panasonic VF-8Z
UN1210

Abstract: UNR1210 XP02210 XP2210
Text: Composite Transistors XP02210 (XP2210) Silicon NPN epitaxial planer transistor 0.20±0.05 5 q 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 s Features q Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1210( UN1210 ) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


Original
PDF XP02210 XP2210) UNR1210 UN1210) UN1210 XP02210 XP2210
2001 - UN1210

Abstract: UNR1210 XN01210 XN1210
Text: Composite Transistors XN01210 (XN1210) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 2 +0.1 +0.1 0 to 0.1 UNR1210( UN1210 ) × 2 elements I Absolute Maximum Ratings 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC


Original
PDF XN01210 XN1210) UNR1210 UN1210) UN1210 XN01210 XN1210
UN1210

Abstract: UNR1210 XN02210 XN2210
Text: Composite Transistors XN02210 (XN2210) Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) G 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2 0.4±0.2 1.50+0.25 ­0.05 4 1 0.30+0.10 ­0.05 (0.65) G 3 2.8+0.2 ­0.3 I Features 0.16+0.10 ­0.06 5° For switching/digital circuits UNR1210( UN1210 ) × 2


Original
PDF XN02210 XN2210) UNR1210 UN1210) UN1210 XN02210 XN2210
2001 - UN1210

Abstract: UNR1210 XN02210 XN2210
Text: Composite Transistors XN02210 (XN2210) Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1210( UN1210 ) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting


Original
PDF XN02210 XN2210) UNR1210 UN1210) UN1210 XN02210 XN2210
2001 - UN1210

Abstract: UNR1210 XP02210 XP2210
Text: Composite Transistors XP02210 (XP2210) Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1210( UN1210 ) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G 0.65


Original
PDF XP02210 XP2210) UNR1210 UN1210) UN1210 XP02210 XP2210
Supplyframe Tracking Pixel