The Datasheet Archive

UN1114 datasheet (5)

Part Manufacturer Description Type PDF
UN1114 Panasonic Silicon PNP epitaxial planer transistor Original PDF
UN1114 Panasonic Silicon PNP epitaxial planer transistor Original PDF
UN1114 Various Russian Datasheets Transistor Original PDF
UN1114 Others The Transistor Manual (Japanese) 1993 Scan PDF
UN1114 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

UN1114 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - UN1114

Abstract: XP4114
Text: Composite Transistors XP4114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1114 × 2 elements s Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55 to +150


Original
PDF XP4114 UN1114 UN1114 XP4114
1998 - UN1114

Abstract: XN4114
Text: 1.45±0.1 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UN1114 × 2 elements 5 0.8


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PDF XN4114 UN1114 UN1114 XN4114
1998 - UN1114

Abstract: XN1114
Text: Composite Transistors XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UN1114 × 2 elements +0.1 +0.2 1.1 -0.1 q 0.8 s Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and


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PDF XN1114 UN1114 UN1114 XN1114
1998 - UN1114

Abstract: XP6114
Text: Composite Transistors XP6114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1114 × 2 elements +0.05 0 to 0.1 q 0.12 ­0.02 s Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 q 0.425 0.65 s Features 1.25±0.1 0.65 0.425 0.2±0.05


Original
PDF XP6114 UN1114 UN1114 XP6114
1998 - UN1114

Abstract: XN6114
Text: 4 0.1 to 0.3 s Absolute Maximum Ratings Parameter 2 0.95 +0.1 UN1114 × 2 elements


Original
PDF XN6114 UN1114 XN6114
1998 - UN1114

Abstract: UN1118 UN1117 UN1116 UN1115 1117 S Transistor UN1113 UN1112 UN1111 UN1110
Text: 1.25±0.05 0.45±0.05 s Resistance by Part Number UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 , ) 0.51 UN1119 1 UN111H 2.2 UN1111/1112/1113/111L 0.8 1.0 UN1114 Resistance , ­30 ­100 Output current IO (mA) Characteristics charts of UN1114 IC - VCE VCE(sat) - IC


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PDF 111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 UN1118 UN1117 UN1116 UN1115 1117 S Transistor UN1113 UN1112 UN1111 UN1110
1998 - UN1114

Abstract: XP1114
Text: Composite Transistors XP1114 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UN1114 × 2 elements 0 to 0.1 q 0.7±0.1 s Basic Part Number of Element 0.12 ­ 0.02 0.2 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 q 0.65 s


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PDF XP1114 UN1114 UN1114 XP1114
un4211 equivalent

Abstract: UN8000 UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
Text: 80 10 47 UN1114 UN1214 UN2114 UN2214 UN2114T UN2214T UN4114 UN4214 UN5114 UN5214 UN6114 UN6214 â


OCR Scan
PDF UN1000 UN2000 UN2000T UN4000 UN5000 UN6000 UN7000 UN8000 UN9000 400mW, un4211 equivalent UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: IResistor Built-in Transistor Series (For Digital Circuits, etc.) Series N am e Pakage (No.) R esistance value Rbe Rb ik O ) UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E U N111F UN111H - U N 1 11L - - - UN2000 Series M in i T y p e (D 1 2 ) (P c = 2 0 0 m W ) PNP UN2111 UN2112 UN2113 UN2114 UN2115


OCR Scan
PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
2001 - UN1114

Abstract: UNR1114 XP04114 XP4114
Text: Composite Transistors XP04114 (XP4114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1114( UN1114 ) × 2 elements I Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55


Original
PDF XP04114 XP4114) UNR1114 UN1114) UN1114 XP04114 XP4114
XP04114

Abstract: XP4114 UN1114 UNR1114
Text: Composite Transistors XP04114 (XP4114) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 s Features q Unit: mm (0.425) For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114( UN1114 ) × 2 elements s Absolute Maximum Ratings Parameter


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PDF XP04114 XP4114) UNR1114 UN1114) XP04114 XP4114 UN1114
UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: 22 0.51 1 47 47 47 4.7 ÜN1113 UN1114 UN1115 UN1116 ÜN1117 UN1118 UN1119 UN1110 UN111D UN111E


OCR Scan
PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
2001 - UN1114

Abstract: UNR1114 XN01114 XN1114
Text: Composite Transistors XN01114 (XN1114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1114( UN1114 ) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


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PDF XN01114 XN1114) UNR1114 UN1114) UN1114 XN01114 XN1114
UN1114

Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 (XP1114) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114( UN1114 ) × 2 elements I Absolute Maximum Ratings 0 to


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PDF XP01114 XP1114) UNR1114 UN1114) 50nductor UN1114 XP01114 XP1114
UN1114

Abstract: UNR1114 XN06114 XN6114
Text: Composite Transistors XN06114 (XN6114) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 1 (0.65) G 5 0.16+0.10 ­0.06 1.50+0.25 ­0.05 4 I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1114( UN1114


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PDF XN06114 XN6114) UNR1114 UN1114) UN1114 XN06114 XN6114
2001 - UN1114

Abstract: UNR1114 XN06114 XN6114
Text: ( UN1114 ) × 2 elements 5 0.8 +0.2 I Basic Part Number of Element G 1.9±0.1 2.9 ­0.05


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PDF XN06114 XN6114) UN1114 UNR1114 XN06114 XN6114
UN1114

Abstract: UNR1114 XP06114 XP6114
Text: Composite Transistors XP06114 (XP6114) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s (0.425) Unit: mm For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1114( UN1114 ) × 2 elements 0 to 0.1 q 0.9±0.1 s Basic


Original
PDF XP06114 XP6114) UNR1114 UN1114) UN1114 XP06114 XP6114
2001 - UN1114

Abstract: UNR1114 XN04114 XN4114
Text: 1.45±0.1 0.5 ­0.05 4 0.16­0.06 0.95 2 0.95 +0.1 UNR1114( UN1114 ) × 2 elements 5


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PDF XN04114 XN4114) UNR1114 UN1114) UN1114 XN04114 XN4114
2001 - UN1114

Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 (XP1114) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1114( UN1114 ) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


Original
PDF XP01114 XP1114) UNR1114 UN1114) UN1114 XP01114 XP1114
2001 - UN1114

Abstract: UNR1114 XP06114 XP6114 TR123
Text: Composite Transistors XP06114 (XP6114) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1114( UN1114 ) × 2 elements I Absolute Maximum Ratings +0.05 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


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PDF XP06114 XP6114) UNR1114 UN1114) UN1114 XP06114 XP6114 TR123
UN1219

Abstract: UN1211 UN921L UN921K UN921F UN921E UN1115 UN1113 UN1111 UN1110
Text: /47K UN1214 (M Type) BCE.R UN1114 RI 10K UNI 215 (M Type) BCE.R UNII15 RI 4.7K


OCR Scan
PDF UN921E UN921F UN921K UN921L UN1110 UN1111 UN1213 10K/47K UNI114 UN1214 UN1219 UN1211 UN1115 UN1113
UN1114

Abstract: UNR1114 XN01114 XN1114
Text: ( UN1114 ) × 2 elements 0 to 0.1 q 1.1+0.3 ­0.1 10° s Basic Part Number of Element s


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PDF XN01114 XN1114) UNR1114 UN1114) UN1114 XN01114 XN1114
UN1114

Abstract: UNR1114 XN04114 XN4114
Text: Composite Transistors XN04114 (XN4114) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 Features 5° 5 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1114( UN1114


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PDF XN04114 XN4114) UNR1114 UN1114) UN1114 XN04114 XN4114
2001 - UN1114

Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314
Text: 1.1­0.1 4 0.1 to 0.3 UNR1214(UN1214) + UNR1114( UN1114 ) I Absolute Maximum Ratings 2 0 to


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PDF XN04314 XN4314) UN1114 UN1214 UNR1114 UNR1214 XN04314 XN4314
2002 - Not Available

Abstract: No abstract text available
Text: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) For digital circuits I Features · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1 2 3 (0.425) Unit: mm 0.12+0.05 ­0.02 0.20±0.05 5 4 1.25±0.10 2.1±0.1 (0.65) (0.65) 1.3±0.1 2.0±0.1 10° I Basic Part Number of Element · UNR1213 (UN1213) + UNR1114 ( UN1114 ) 0.9±0.1


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PDF XP03390 UNR1213 UN1213) UNR1114 UN1114)
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