The Datasheet Archive

UN1111 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
UN1111 UN1111 ECAD Model Panasonic Silicon PNP-transistor+integrated resistor Original PDF
UN1111 UN1111 ECAD Model Panasonic Silicon PNP epitaxial planer transistor Original PDF
UN1111 UN1111 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
UN1111 UN1111 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

UN1111 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - UN1114

Abstract: UN1118 UN1117 UN1116 UN1115 1117 S Transistor UN1113 UN1112 UN1111 UN1110
Text: Transistors with built-in Resistor UN1111 /1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D , 1.25±0.05 0.45±0.05 s Resistance by Part Number UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 , Electrical Characteristics UN1111 /1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L , UN1111 ­ 0.5 UN1112/1114/111E/111D ­ 0.2 UN1113 Emitter cutoff current ­ 0.1 UN1115 , emitter voltage VCEO IC = ­2mA, IB = 0 50 V UN1111 Forward current transfer ratio 35


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PDF 111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 UN1118 UN1117 UN1116 UN1115 1117 S Transistor UN1113 UN1112 UN1111 UN1110
UN1219

Abstract: UN1211 UN921L UN921K UN921F UN921E UN1115 UN1113 UN1111 UN1110
Text: -0.005 -0.25 -0.01 -0.0003 UN1111 KT Dig tal -50 -50 -0.1 0.4 -0.1 -50 35 -10 -0. 005 -0.25 -0.01 , UN1210 (M Type) BCE.R UN1110 R1/R2 10K/10K UN1211 (M Type) BCE.R UN1111 R1/R2 22K/22K , RI 47K UN1110 (M Type) BCE.R UN1210 R1/R2 10K/10K UN1111 (M Type) BCE.R UN1211 R1


OCR Scan
PDF UN921E UN921F UN921K UN921L UN1110 UN1111 UN1213 10K/47K UNI114 UN1214 UN1219 UN1211 UN1115 UN1113
1998 - UN1111

Abstract: XP1111
Text: Composite Transistors XP1111 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UN1111 × 2 elements 0 to 0.1 q 0.7±0.1 s Basic Part Number of Element 0.12 ­ 0.02 0.2 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 q 0.65 s


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PDF XP1111 UN1111 UN1111 XP1111
1998 - UN1111

Abstract: XP4111
Text: Composite Transistors XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1111 × 2 elements s Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55 to +150


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PDF XP4111 UN1111 UN1111 XP4111
1998 - 9s MARKING

Abstract: UN1111 XN1111
Text: Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UN1111 × 2 elements +0.1 +0.2 1.1 -0.1 q 0.8 s Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and


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PDF XN1111 UN1111 9s MARKING UN1111 XN1111
1998 - transistor 6z

Abstract: marking 6Z UN1111 XN6111
Text: 4 0.1 to 0.3 s Absolute Maximum Ratings Parameter 2 0.95 +0.1 UN1111 × 2 elements


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PDF XN6111 transistor 6z marking 6Z UN1111 XN6111
1998 - UN1111

Abstract: XN4111
Text: 4 0.1 to 0.3 s Absolute Maximum Ratings Parameter 2 0.8 +0.2 UN1111 × 2 elements


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PDF XN4111 UN1111 XN4111
1998 - UN1111

Abstract: XP6111
Text: Composite Transistors XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 +0.05 UN1111 × 2 elements 0 to 0.1 q 0.12 ­0.02 s Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 q 0.425 0.65 s Features 1.25±0.1 0.65 0.425 0.2±0.05


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PDF XP6111 UN1111 UN1111 XP6111
UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: UN9111 UN9112 UN9113 U N 9 i14 V ceo (V) PNP UN1111 UN1112 lc (mA) L UC Rst 2


OCR Scan
PDF UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
un4211 equivalent

Abstract: UN8000 UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
Text: ) lc (mA) 10 10 UN1111 UN1211 UN2111 UN2211 UN2111T UN2211T UN4111 UN4211 UN5111 UN5211 UN6111 UN6211


OCR Scan
PDF UN1000 UN2000 UN2000T UN4000 UN5000 UN6000 UN7000 UN8000 UN9000 400mW, un4211 equivalent UN221FT UN1219 UN6211 UN9211 un421f un50 UN2214 UN2212T
equivalent transistor n 4212

Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Text: IResistor Built-in Transistor Series (For Digital Circuits, etc.) Series N am e Pakage (No.) R esistance value Rbe Rb ik O ) UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E U N111F UN111H - U N 1 11L - - - UN2000 Series M in i T y p e (D 1 2 ) (P c = 2 0 0 m W ) PNP UN2111 UN2112 UN2113 UN2114 UN2115


OCR Scan
PDF UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
UN1111

Abstract: UNR1111 XN04111 XN4111
Text: Composite Transistors XN04111 (XN4111) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 6 5° 5 Features 1.50+0.25 ­0.05 G 4 0.16+0.10 ­0.06 1 (0.65) I Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1111( UN1111


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PDF XN04111 XN4111) UNR1111 UN1111) UN1111 XN04111 XN4111
2001 - XN4111

Abstract: UN1111 UNR1111 XN04111
Text: 0.95 +0.1 I Absolute Maximum Ratings 0.95 2.9 ­0.05 1.1­0.1 UNR1111( UN1111 ) × 2


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PDF XN04111 XN4111) XN4111 UN1111 UNR1111 XN04111
UN1111

Abstract: UNR1111 XN01111 XN1111
Text: Composite Transistors XN01111 (XN1111) Silicon PNP epitaxial planer transistor Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) q 5 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2 0.4±0.2 1.50+0.25 ­0.05 4 1 0.30+0.10 ­0.05 (0.65) q 3 2.8+0.2 ­0.3 s Features 0.16+0.10 ­0.06 5° For switching/digital circuits UNR1111( UN1111 ) × 2


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PDF XN01111 XN1111) UNR1111 UN1111) UN1111 XN01111 XN1111
UN1111

Abstract: UNR1111 XP04111 XP4111
Text: Composite Transistors XP04111 (XP4111) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 s Features q Unit: mm (0.425) For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1111( UN1111 ) × 2 elements s Absolute Maximum Ratings 0 to


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PDF XP04111 XP4111) UNR1111 UN1111) UN1111 XP04111 XP4111
2001 - UN1111

Abstract: UNR1111 XN06111 XN6111
Text: +0.1 0.95 4 0.16­0.06 0.95 2 0.1 to 0.3 UNR1111( UN1111 ) × 2 elements I Absolute


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PDF XN06111 XN6111) UN1111 UNR1111 XN06111 XN6111
UN1111

Abstract: UNR1111 XP01111 XP1111
Text: Composite Transistors XP01111 (XP1111) Silicon PNP epitaxial planer transistor 0.20±0.05 5 G 0.12+0.05 ­0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.2±0.1 1.25±0.10 2.1±0.1 I Features G Unit: mm (0.425) For switching/digital circuits 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1111( UN1111 ) × 2 elements I Absolute Maximum Ratings 0 to


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PDF XP01111 XP1111) UNR1111 UN1111) 50nductor UN1111 XP01111 XP1111
2001 - marking 6Z

Abstract: UN1111 UNR1111 XP06111 XP6111
Text: Composite Transistors XP06111 (XP6111) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 +0.05 UNR1111( UN1111 ) × 2 elements I Absolute Maximum Ratings 0 to 0.1 G 0.12 ­0.02 I Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 G 0.425 0.65 I Features


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PDF XP06111 XP6111) UNR1111 UN1111) marking 6Z UN1111 XP06111 XP6111
2001 - UN1111

Abstract: UNR1111 XN01111 XN1111
Text: Composite Transistors XN01111 (XN1111) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 2 0 to 0.1 UNR1111( UN1111 ) × 2 elements +0.1 +0.2 1.1 -0.1 G 0.8 I Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 0.65±0.15 1 4 0.95 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting


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PDF XN01111 XN1111) UNR1111 UN1111) UN1111 XN01111 XN1111
2001 - UN1111

Abstract: UNR1111 XP01111 XP1111
Text: Composite Transistors XP01111 (XP1111) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1.25±0.1 1 0.425 2 5 3 4 +0.05 0.9± 0.1 UNR1111( UN1111 ) × 2 elements 0 to 0.1 G 0.7±0.1 I Basic Part Number of Element 0.12 ­ 0.02 0.2 G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 G


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PDF XP01111 XP1111) UNR1111 UN1111) UN1111 XP01111 XP1111
2001 - UN1111

Abstract: UNR1111 XP04111 XP4111
Text: Composite Transistors XP04111 (XP4111) Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UNR1111( UN1111 ) × 2 elements I Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO ­50 V VCEO ­50 V IC ­100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg ­55


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PDF XP04111 XP4111) UNR1111 UN1111) UN1111 XP04111 XP4111
marking 6Z

Abstract: UN1111 UNR1111 XN06111 XN6111
Text: Composite Transistors XN06111 (XN6111) Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 ­0.3 1.50+0.25 ­0.05 6 1 (0.65) G 5 0.16+0.10 ­0.06 5° 4 I Features G Unit: mm 2.90+0.20 ­0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1111( UN1111


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PDF XN06111 XN6111) UNR1111 UN1111) marking 6Z UN1111 XN06111 XN6111
2002 - UNR1211

Abstract: XN0A311 XN1A311 UN1111 UN1211 UNR1111
Text: ( UN1111 ) Tr1 0.4±0.2 4 1.50+0.25 ­0.05 3 · Two elements incorporated into one package


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PDF XN0A311 XN1A311) UNR1211 UN1211) UNR1111 UN1111) UNR1211 XN0A311 XN1A311 UN1111 UN1211 UNR1111
marking 6Z

Abstract: UN1111 UNR1111 XP06111 XP6111
Text: Composite Transistors XP06111 (XP6111) Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 q 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 5° q 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 s Unit: mm (0.425) For switching/digital circuits 1 2 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 UNR1111( UN1111 ) × 2 elements s Absolute Maximum Ratings 0 to


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PDF XP06111 XP6111) UNR1111 UN1111) marking 6Z UN1111 XP06111 XP6111
UNR1211

Abstract: XN04311 XN4311 UN1111 UN1211 UNR1111 XN04311XN4311
Text: circuits 0.30+0.10 ­0.05 0.50+0.10 ­0.05 UNR1211(UN1211) + UNR1111( UN1111 ) I Absolute Maximum


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PDF XN04311 XN4311) UNR1211 UN1211) UNR1111 UN1111) XN04311 XN4311 UN1111 UN1211 XN04311XN4311
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