The Datasheet Archive

UMT1011 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
UMT1011 UMT1011 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
UMT1011 UMT1011 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
UMT1011 UMT1011 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
UMT1011 UMT1011 ECAD Model Unitrode International Semiconductor Data Book 1981 Scan PDF

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NPN Transistor 10A 400V

Abstract: iess 312 UMT1011 UMT1012 04/unitrode 655
Text: POWER TRANSISTORS 15A, 500V, Fast Switching, High Es/b Silicon NPN Mesa UMT1011 UMT1012 lc = 10A FEATURES • Rise Time: 0.4mS) • Fall Time: O.VS ) • High Second Breakdown Energy: 6000/nJ , and deflection circuits. ABSOLUTE MAXIMUM RATINGS umt1011 umt1012 Collector Emitter Voltage, VCEV , J/ie" of base provided temperature-time exposure is iess than 260°C for 10 seconds. Z"1 UMT1011 , SPECIFICATIONS (at 25°C unless noted) UMT1011 UMT1012 Test Conditions Test symbol MIN. MAX. MIN. MAX


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PDF UMT1011 UMT1012 6000/nJ 120/jH 25/iS NPN Transistor 10A 400V iess 312 UMT1012 04/unitrode 655
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: No file text available


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
y51 h 120c

Abstract: ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
Text: No file text available


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PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
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