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ROHM Semiconductor
UMB11NTN Trans Digital BJT PNP 100mA 6-Pin UMT T/R - Tape and Reel (Alt: UMB11NTN)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet UMB11NTN Reel 0 10 Weeks 3,000 - - - - $0.04154 Buy Now
Bristol Electronics UMB11NTN 2,800 - - - - - Buy Now
RS Components UMB11NTN Package 10 10 - £0.2 £0.2 £0.042 £0.038 Buy Now
Chip One Exchange UMB11NTN 36,655 - - - - - Get Quote
Chip1Stop (2) UMB11NTN 2,800 200 - - - $0.299 $0.299 Buy Now
UMB11NTN Bulk 2,895 50 - - $0.0445 $0.0445 $0.0445 Buy Now
More Distributors
Farnell element14 UMB11NTN 0 5 - £0.235 £0.0993 £0.078 £0.078 Buy Now
ROHM Semiconductor
UMB11NFHATN TRANS, DUAL PNP, -50V, SC-88; Digital Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 /;RoHS Compliant: Yes
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 UMB11NFHATN Cut Tape 1,915 1 $0.269 $0.206 $0.098 $0.054 $0.054 Buy Now
element14 Asia-Pacific UMB11NFHATN 1,915 1 $0.313 $0.313 $0.15 $0.094 $0.094 Buy Now
Farnell element14 UMB11NFHATN 4,715 5 - £0.219 £0.0915 £0.0623 £0.0623 Buy Now

UMB11N datasheet (6)

Part Manufacturer Description Type PDF
UMB11N ROHM General purpose (dual digital transistors) Original PDF
UMB11N ROHM General purpose (dual digital transistors) Original PDF
UMB11N ROHM General purpose (dual digital transistors) Original PDF
UMB11NTN ROHM Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL PNP UMT6 Original PDF
UMB11NTN ROHM TRANS DIGITAL BJT PNP 100MA 6UMT6 T/R Original PDF
UMB11NTR ROHM General Purpose (Dual Digital Transistors) Original PDF

UMB11N Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - Not Available

Abstract: No abstract text available
Text: EMB11FHA / UMB11NFHA / IMB11AFRA EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital , Resistors, R1 = R2 = 10kW. (6) (5) (2) (5) (4) (3) UMB11NFHA UMB11N SOT-353 (SC , code EMB11 EMB11FHA EMT6 1616 T2R 180 8 8,000 B11 UMB11N UMB11NFHA UMT6 , / UMB11NFHA / EMB11 / UMB11N / IMB11A IMB11AFRA Data Sheet lAbsolute maximum ratings (Ta = 25°C) EMB11FHA UMB11NFHA EMB11 / / UMB11N PD IMB11A IMB11AFRA


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PDF EMB11FHA UMB11NFHA IMB11AFRA EMB11 UMB11N IMB11A -100mA AEC-Q101 -100mA DTA114E
2000 - DTA114E

Abstract: EMB11 IMB11A T148 UMB11N transistor b11
Text: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , , UMB11N Power dissipation IMB11A Pd Junction temperature Tj 150 °C Storage temperature , EMB11 / UMB11N R2=10k Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Equivalent , DTr1 and DTr2. 1 2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta = 25


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PDF EMB11 UMB11N IMB11A DTA114E EMB11 UMB11N -500m IMB11A T148 transistor b11
2012 - INVERTER 10kW

Abstract: No abstract text available
Text: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , ) (1) UMB11N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two , circuit EMB11 / UMB11N OUT (6) IN (5) GND (4) OUT (4) IMB11A IN (5) GND (6) lApplication Inverter , specifications Part No. EMB11 UMB11N IMB11A Package EMT6 UMT6 SMT6 Package size (mm) 1616 2021 2928 Taping code , Rev.B EMB11 / UMB11N / IMB11A lAbsolute maximum ratings (Ta = 25°C)


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PDF EMB11 UMB11N IMB11A -100mA EMB11 SC-107C) OT-353 SC-88) INVERTER 10kW
transistor marking TN SC-95

Abstract: No abstract text available
Text: UMB11N IMB11A Features · · · available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMB11N and IMB11A; B11 package contains two independent PNP digital transistors (DTA114EKA), each with , used for both Transistor, digital, dual, PNP, w ith 2 resistors Dimensions (Units : mm) UMB11N , UMB11N , IMB11A Transistor, digital, dual, with resistors, 6-pin package Absolute maximum ratings (Ta = 25 , dissipation UMB11N IMB11A mA Do not exceed 120 mW per element Do not exceed 200 mW per element °C D C Pd


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PDF UMB11N IMB11A SC-74) IMB11A; DTA114EKA) SC-70) SC-59) UMB11N transistor marking TN SC-95
2004 - DTA114E

Abstract: EMB11 IMB11A T110 UMB11N
Text: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , IMB11A IMB11A (3) (2) (1) R1 R2 (6) EMB11 / UMB11N Symbol Limits VCC -50 V , IO -50 IC (Max.) -100 150 (TOTAL) V mA EMB11, UMB11N Power dissipation IMB11A , be exceeded. Rev.A 1/2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta


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PDF EMB11 UMB11N IMB11A DTA114E EMB11 UMB11N IMB11A T110
TRANSISTOR D 1902

Abstract: a114* transistor 1902 transistor UMB rohm 08P1
Text: °C) Parameter Supply voltage Input voltage Symbol Voc VlN ·External dimensions (Units: mm) UMB11N 1MB11A , dissipation UMB11N IMB11A lo Ic O W m .) -50 -100 150 (TOTAL) 300 (TOTAL) 150 -55~150 mA *1 *2 , Type UMB11N IMB11A Basic ordering unit (pieces) TN 3000 Taping T110 3000 - O _ 'w' OUTPUT


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PDF DTA114E UMB11N 1MB11A --50V, 100MHz* IMB11A TRANSISTOR D 1902 a114* transistor 1902 transistor UMB rohm 08P1
2012 - Not Available

Abstract: No abstract text available
Text: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , ) UMB11N SOT-353 (SC-88) (6) (1) IMB11A SOT-457 (SC-74) lInner circuit EMB11 / UMB11N , EMT6 1616 T2R 180 8 8,000 B11 UMB11N UMT6 2021 TR 180 8 3,000 , (pcs) Marking 2012.06 - Rev.B Data Sheet EMB11 / UMB11N / IMB11A lAbsolute maximum ratings , to +150 °C Collector current Power dissipation EMB11 / UMB11N PD IMB11A Junction


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PDF EMB11 UMB11N IMB11A -100mA -100mA DTA114E R1120A
2012 - Not Available

Abstract: No abstract text available
Text: EMB11 / UMB11N / IMB11A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in , -107C) UMB11N SOT-353 (SC-88) SMT6 (4) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 10kW. (5 , Compliant. (2) (1) IMB11A SOT-457 (SC-74) lInner circuit EMB11 / UMB11N IMB11A OUT (6 , 180 8 8,000 B11 UMB11N UMT6 2021 TR 180 8 3,000 B11 IMB11A SMT6 , Rev.B Data Sheet EMB11 / UMB11N / IMB11A lAbsolute maximum ratings (Ta = 25° C)


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PDF EMB11 UMB11N IMB11A -100mA -100mA EMB11 SC-107C) UMB11N OT-353 SC-88)
2004 - Not Available

Abstract: No abstract text available
Text: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , ) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 (3) UMB11N 0.2 0.5 0.5 0.5 1.0 , EMB11 / UMB11N (3) (2) (1) R1 R2 DTr1 R1=10k R2=10k DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2 , Limits -50 -40 10 Output current EMB11, UMB11N Power dissipation IMB11A Junction temperature Storage , must not be exceeded. (3) (2) (1) (1) (2) 1/2 EMB11 / UMB11N / IMB11A


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PDF EMB11 UMB11N IMB11A DTA114E EMB11 UMB11N
2004 - R210K

Abstract: sMT6 DTA114E EMB11 IMB11A T110 UMB11N
Text: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , (4) UMB11N 0.65 Abbreviated symbol : B11 Structure Epitaxial planar type PNP silicon , IMB11A IMB11A (3) (2) (1) R1 R2 (6) EMB11 / UMB11N Symbol Limits VCC -50 V , IO -50 IC (Max.) -100 150 (TOTAL) V mA EMB11, UMB11N Power dissipation IMB11A , exceeded. 1/2 EMB11 / UMB11N / IMB11A Transistors Electrical characteristics (Ta = 25


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PDF EMB11 UMB11N IMB11A DTA114E EMB11 UMB11N -50m-100m R210K sMT6 IMB11A T110
2004 - Not Available

Abstract: No abstract text available
Text: EMB11 / UMB11N / IMB11A Transistors General purpose (dual digital transistors) EMB11 / UMB11N , ) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 (3) UMB11N 0.2 0.5 0.5 0.5 1.0 1.6 2.0 , EMB11 / UMB11N (3) (2) (1) R1 R2 DTr1 R1=10k R2=10k DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2 , Limits -50 -40 10 Output current EMB11, UMB11N Power dissipation IMB11A Junction temperature Storage , must not be exceeded. (3) (2) (1) (1) (2) 1/2 EMB11 / UMB11N / IMB11A


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PDF EMB11 UMB11N IMB11A DTA114E EMB11 UMB11N -500m
UMB11N

Abstract: No abstract text available
Text: SPICE PARAMETER UMB11N by ROHM TR Div. * UMB11N DIGITAL PNP BJT model * Date: 2007/01/06 * BJT with resistors *C B E .SUBCKT UMB11N 1 2 3 R1 2 Base Rb 10k R2 Base 3 Re 10K Q1 1 Base 3 QDTA1 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTA1 PNP + IS=20.000E-15 + BF=187.64 + VAF=10 + IKF=.21074 + ISE=20.000E-15 + NE=1.5456 + BR=13.699 + VAR=100 + IKR=1.2543 + ISC , =1.5000 .ENDS UMB11N -


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PDF UMB11N UMB11N 000E-15 145E-12 937E-12 613E-12 00E-12 00E-9
1998 - transistor 513

Abstract: DTA114ES a114* transistor A114E IMB11A UMB11N Transistors General transistor a114e
Text: Transistors General purpose (dual digital transistors) UMB11N / IMB11A FFeatures 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor (Built-in , = 25_C) (96-454-A114E) 512 Transistors UMB11N / IMB11A FElectrical characteristics


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PDF UMB11N IMB11A DTA114Es 96-454-A114E) transistor 513 a114* transistor A114E IMB11A Transistors General transistor a114e
1998 - a144* transistor

Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General C144E transistor TRANSISTORS
Text: transistors) UMB11N / IMB11A FFeatures 1) Two DTA114Es in a UMT or SMT package. 2) Mounting possible with , FElectrical characteristics (Ta = 25_C) UMB11N / IMB11A FPackaging specifications FElectrical


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PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General C144E transistor TRANSISTORS
X I TRANSISTOR 6 PIN

Abstract: sMT6
Text: IMB10A IMB11A IMH1A D T '- > -P ^ D T r, ^4 1 1.'5 J '6 UMB9N UM B10N UMB11N - f 3 . " '2


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PDF SC-74) SC-70) SC-59) DTA124EKA DTA144EKA X I TRANSISTOR 6 PIN sMT6
potential divider

Abstract: DTC343T UMD2N UMT6 SC-88 FMG5 IMD14 SC-89 SC-75A EMG5 IMD10A
Text: IMB9A EMB10 UMB10N IMB10A Input resistor type EMB11 UMB11N IMB11A IMB16 UMB5NdividerIMB5A type , UMA7N UMA8N UMA9N UMA10N UMA11N UMA3N UMA4N UMA6N UMB1N UMB2N UMB9N UMB10N UMB11N UMB5N


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PDF SC-89) OT-490> SC-75A) OT-416> EMD12 UMD12N IMD14 IMD10A IMD16A SC-70) potential divider DTC343T UMD2N UMT6 SC-88 FMG5 IMD14 SC-89 SC-75A EMG5 IMD10A
IMH10

Abstract: No abstract text available
Text: UMB4N UMB9N UMB10N UMB11N UMC2N UMC3N UMC4N UMC5N UMD2N UMD3N UMD6N 676 679 682 685 688 691 639 643 647


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PDF 2SA1036K 2SA1037AK 2SA1514K 2SA1576A 2SA1577 2SA1579 2SA1727F5 2SA1759 2SA1774 2SA1797 IMH10
Not Available

Abstract: No abstract text available
Text: h7 / T ransistors T M V 1 / -T I # v 7 UMB11N IMB11A · « ft C 2 fi < t f 'A o n '5 . K 5 - K r / H X / I s o l a t e d M i n i M o l d D e v i c e 1 / -t i P N P v U 3 > h · ? > ' > ' * £( f i i a r t i IZ 'C f) E p i t a x a lP l a n a r P N P S i l i c o n T r a n s i s t o r ( I n c l u d e s R e s i s t o r s ) · f W 5- $ K ' 7 ' l ' / ^ / I n v e r t e r D r i v e r · TFÜH/Dimensions (Unit : mm) UM B 11N r 2.0:0.21.3 <-0.1 0.7 [j](4 ) 1) UMT (SC-70), SMT


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PDF UMB11N IMB11A SC-70) SC-59) S34JS
1998 - B647

Abstract: DTA144EK DI-74 DTA114EK transistor marking B9
Text: IMB8A PNP Type UMB10N IMB10A IMB16 UMB11N IMB11A UMB9N IMB9A UMB1N IMB1A UMB2N IMB2A PNP Type UMB5N


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PDF IMT17 SC-88 SC-74 B647 DTA144EK DI-74 DTA114EK transistor marking B9
2013 - Not Available

Abstract: No abstract text available
Text: ) Complementary NPN Types: DTC114E series 6) Complex transistors: EMB11/ UMB11N / IMB11A/  UMA9N/ FMA9A (PNP


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PDF DTA114E -100mA -100mA DTA114EM DTA114EEB SC-105AA) SC-89) need/10
MB11A

Abstract: sot36
Text: I n n n UUL J V P hi 1 UMB10N MB10A UMB11N MB11A UMB5N IMB5A .n a r t T nLJ fpu i U Pin I


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PDF DTA124EKAX2 DTA144EKAX2 DTA114YKAX2 DTA123JKAX2 DTA114EKAX2 OT-36) MB11A sot36
jd 1803

Abstract: otc114 2SD1834 E2p 93 transistor B14A DTC143ZKA transistor marking w9 UMW10 marking code g4c MDC02
Text: ofsorocket UM6 \ UMB1N UMB2N UMB3N UMB4N UMB5N UMB6N UMB7N UMB8N UMB9N UMB10N UMB11N UMD2N UMD3N UMD6N , UMB7N UMB8N UMB9N UMB10N UMB11N UMD2N UMD3N UMD6N UMH1N UMH2N UMH3N UMH4N UMH5N UMH6N UMH7N UMH8N UMH9N


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PDF 2SA1774 2SA1821 2SA1885 2SC4617 2SC4618 2SC4619 2SC4649 2SC4725 2SC4726 2SC4997 jd 1803 otc114 2SD1834 E2p 93 transistor B14A DTC143ZKA transistor marking w9 UMW10 marking code g4c MDC02
DTA114EX2

Abstract: DTA114E DTC114E DTC114EX2 KIY transistors
Text: IMB10A UMB11N IMB11A Bs Pin No I n n n UMB5N IMB5A 2 0 3 , Ü n n n UMB6N


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PDF UMA10N UMA11N UMG10N UMG11N FMA10A FMA11A DTA124EX2 DTA144EX2 DTA143T DTC143T DTA114EX2 DTA114E DTC114E DTC114EX2 KIY transistors
sot-36

Abstract: DTA124EKAX2
Text: n i U ^JT L U LI n n UMB2N UMB9N 68688030- h L U UMB10N UMB11N UMB5N 2.2


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PDF
2000 - rkm 33 transistor

Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A 2SA1885 rkm 35 transistor marking W8 transistor
Text: UMB10N A5 FMA5A B11 UMB11N A6 FMA6A B2 UMB2N A7 FMA7A B3 UMB3N A8


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PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A 2SA1885 rkm 35 transistor marking W8 transistor
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