The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1409DICE#PBF Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, DIE-28, Analog to Digital Converter
LTC1409DWF Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, WAFER-28, Analog to Digital Converter
LTC1409DICE Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, DIE-28, Analog to Digital Converter
LTC1409DWF#PBF Linear Technology IC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, UUC28, 90 X 155 MM, WAFER-28, Analog to Digital Converter
ADC14155CISQ/NOPB Texas Instruments 14-Bit, 155-MSPS, 1.1-GHz Input Bandwidth Analog-to-Digital Converter (ADC) 48-WQFN -40 to 85
ADC14V155CISQ/NOPB Texas Instruments 14-Bit, 155-MSPS, 1.1-GHz Input Bandwidth Analog-to-Digital Converter (ADC) 48-WQFN -40 to 85

UM-155 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - HFBR-4531 adapter

Abstract:
Text: -0414 (ST®, 70 MBd) HFBR-0416 (ST®, 155 MBd) HFBR-0463 (ST®, 20 MBd) Transmitters/Receivers HFBR , 62.5/125 µm 20 MBd 62.5/125 µm 32 MBd 62.5/125 µm 55 MBd 62.5/125 µm 125 MBd 62.5/125 µm 155 , Evaluation Kits HFBR-0310 (ST®, 155 MBd) HFBR-1312T transmitter, HFBR-2316T receiver, fully assembled PC board, and literature Fiber Size Data Rate Distance 62.5/125 µm 55 MBd 4000 m 155 MBd 2700 m , 120 MBd 500 m 150 HFBR-5203/5203T ATM SONET-OC3 820 nm 62.5/125 µm 155 MBd 300


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PDF HFBR-0501 HFBR-1524 HFBR-2524 HFBR-0527H HFBR-1527 HFBR-2526 XMT5370 XMT5170 RGR2622 LSC2500 HFBR-4531 adapter HFBR-1532 JIS FO5 HP photo interrupter module HFBR-4521 PDT0313-FC-A HFBR-11E5 11E6 hard silica optic cable HFBR-1414T
1999 - hfbr 1540

Abstract:
Text: -0400 (SMA, 5 MBd) HFBR-0410 (ST®, 5 MBd) HFBR-0414 (ST®, 70 MBd) HFBR-0416 (ST®, 155 MBd) HFBR-0463 (ST®, 20 , MBd 62.5/125 µm 20 MBd 62.5/125 µm 32 MBd 62.5/125 µm 55 MBd 62.5/125 µm 125 MBd 62.5/125 µm 155 MBd , literature Fiber Size Data Rate Distance 62.5/125 µm 55 MBd 4000 m 62.5/125 µm 155 MBd 2700 m 8/125 µm 32 MBd 14000 m YYWW HFBR-X31XT Product/Part Numbers Evaluation Kits HFBR-0310 (ST®, 155 MBd) Transmitters , nm 820 nm 820 nm 1300 nm 62.5/125 µm 62.5/125 µm 62.5/125 µm 62.5/125 µm 120 MBd 120 MBd 155


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PDF HFBR-0501 HFBR-1524 HFBR-2524 HFBR-1527 HFBR-2526 XMT5370 XMT5170 RGR2622 hfbr 1540 HFBR-24 hfbr-2534 receiver JIS FO5
2002 - TRF5916

Abstract:
Text: Part Number Package Data Rate LB7677 1.55 µm ILM C band 640 km, DWDM LB7678 1.55 µm ILM C band, WLL 640 km, DWDM LE7602-SAC 1.55 µm ILM 25 km, SR-2/1-64.2 LE7602-LAC 1.55 µm ILM 40 km, IR-2/S-64.2 DWDM LE7602-VAC 1.55 µm ILM 80 km, LR-2/L-64.2, DWDM LE7612xx 1.55 µm ILM WLL 40 km/80 km, DWDM 2.52.5 Gbit/sILM Gbit/s ILM 10 Gbit/s 10 Gbit/s 7 , operation at 1.55 µm wavelength · MSA compliant (LB7678, LE7612xx) · 2.5 Gbit/s up to 640 km, 10 Gbit/s up


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PDF 25-year t8-392-0441 oeb-072302 D-85622 TRF5916 TRF5926 opnext SFP TRV5013 trf5925 RCV5905AN TRV50 STM-64 IR OpNext trf5916 opnext
OEFS

Abstract:
Text: -3M D162-PS-4M D200-PS-4M Center wavelength (µ m) 1.31 1.48 1.55 1.31 1.48 1.55 1.625 2.00 Aperture diameter (mm) Center wavelength (µ m) 1.31 1.48 1.55 1.31 1.48 1.55 Aperture diameter (mm) Center wavelength (µ m) 1.31 1.48 1.55 1.31 1.48 1.55 Aperture diameter (mm , ) Wavelength (nm) 1.55 µm 1.55 µm Isolation characteristics by wavelength Insertion losses by , 80 -20 0 Temperature (°C) 20 40 60 80 Temperature (°C) q 1.55 µm q 1.55


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G10342-54

Abstract:
Text: PHOTODIODE InGaAs PIN G10342-54 ROSA, 1.3/ 1.55 µm, 10 Gbps l XMD (10 Gbps , +) =1.31 µm = 1.55 µm , RL= = 1.55 µm, -3 dB Pin= -18 dBm = 1.55 µm, -3 dB Pin= -18 dBm, =6 dB f=1 GHz, Pin= -18 dBm = 1.55 µm, 11.1 Gbps PRBS=231-1, BER=10-12 =14 dB , Pin > -7 dBm Tc=25 °C Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 - Typ. 0.85 0.9 32 Max. 50 7.0 9.0 - , , = 1.55 µm, Pin= -18 dBm) 0 -5 (dB) 10-4 -5 10 -6 10 -7 10 -8 -10


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PDF G10342-54 STM-64/OC-192) KIRDA0195JD 435-85581126-1TEL 434-3311FAX KSPD1064J01 G10342-54 XMD MSA
Not Available

Abstract:
Text: Transceiver 155 Mbit/s MM SFP Fast Ethernet Transceiver 155 Mbit/s SM SFP Fast Ethernet Transceiver 155 Mbit/s SM SFP Fast Ethernet Transceiver 155 Mbit/s SM Wave length 1310 nm , min. 10 dB min. 10 dB Data rate 155 Mbit/s 155 Mbit/s 155 Mbit/s 155 Mbit/s , modules Part number 20 76 000 0300 SFP Fast Ethernet Transceiver 155 Mbit/s SM 20 76 020 0300 SFP Fast Ethernet Transceiver L40 155 Mbit/s SM 20 76 024 0300 SFP Fast Ethernet Transceiver


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2015 - Not Available

Abstract:
Text: ƒ— 10 ( 1.55 µm) 常温型 (0.9∼1.7 µm) 常温型 (0.9∼1.9 µm) 1段電子冷却å , •·ç¯„囲 最大感度波長 S λ λp λ=0.65 µm λ=λp (µm) (µm) (A/W) (A/W) 0.5∼1.7 1.55 , ƒ³ (別売) TO-18 G8370-81*3 1.55 写真 C4159-03 TO-5 TO-8 C4159-03 A3179 C1103 , 1.55 G8941-01 ϕ1 G8941-02 ϕ0.5 G8941-03 ϕ0.3 0.9∼1.7 0.95 表面実装型 , 1.55 0.95 0.1 500 受光感度 S λ= 1.55 µm (A/W) 暗電流 ID 1ç


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2008 - G10342-54

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G10342-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , O ptical return loss ORL *3: Single-ended (Vout+) m easurem ent Conditions =1.31 µm = 1.55 µm Dark state, R L = = 1.55 µm , -3 dB Pin= -18 dBm = 1.55 µm , -3 dB Pin= -18dBm E xtinction ratio , 7.0 9.0 - G Hz - 30 100 kHz 3.5 6 - k = 1.55 µm , 11.1 G bps PRBS , , Pin > -7 dBm Dark state, Tc=25 °C Vpd=3.3 V =1.31/ 1.55 µm 300 27 450 0.05 35 700 0.5


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PDF G10342-54 STM-64/OC-192) SE-171 KIRD1106E06 G10342-54 KIRD1106E06 um 741
2008 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G10342-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , µm = 1.55 µm Dark state, R L = = 1.55 µm , -3 dB Pin= -18 dBm = 1.55 µm , -3 dB Pin= -18dBm E xtinction ratio=6 dB f=100 MHz, Pin= -18 dBm = 1.55 µm , 11.1 G bps PRBS=2 31 -1, BER=10 -12 E xtinction ratio=14 dB Differential, Pin > -7 dBm Dark state, Tc=25 °C Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 7.0 , =25 °C, Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 0 (Typ. Ta=25 °C, Bit rate 11.1 Gbps, PN


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PDF G10342-54 STM-64/OC-192) suscept50, SE-171 KIRD1106E05
2006 - photodiode 1.0 Gbps 1.55

Abstract:
Text: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/ 1.55 µm, 10.7 Gbps Features , characteristics 2 (Ta=25 °C, = 1.55 µm, Vcc=3.13 to 3.47 V, Vee=0 V, RL=50 * , unless otherwise noted) Parameter , current Symbol R Icc fc fc-L Tz VBR Pmin Pmax Vomax ID M=1 Conditions =1.31 µm = 1.55 µm Min. 0.65 0.70 , 37 dBm 650 mVpp nA dB G Unit A/W µm mA GHz kHz k V Dark state, RL= = 1.55 µm, M=7, -3 dB = 1.55 µm, -3 dB 3 RL=50 , f=100 MHz * ID=100 µA 10.7 Gbps, PRBS=2 -1 M=7 -12 BER=10 , = 1.55 µm M=3 Extinction


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PDF G10204-54 SE-171 KAPD1017E01 photodiode 1.0 Gbps 1.55
2007 - 1BW 58

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , = 1.55 µm Dark state, R L= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 , f=100 MHz = 1.55 µm, PRBS=2 31-1, BER=10 -12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 7.0 4 Typ. 0.85 0.9 32 9.0 10 1.0 6 Max. 45 50 , 5 (Ta=25 °C, Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) RELATIVE SENSITIVITY (dB) 0 -4


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PDF G10342-14/-54 G10342-54) STM-64/OC-192) SE-171 KIRD1106E03 1BW 58 G10342-14 G10342-54
2006 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9911-14/-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , Conditions =1.31 µm = 1.55 µm Dark state, R L= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 , f=100 MHz = 1.55 µm, PRBS=2 31-1, BER=10-12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 6.6 4.5 350 27 Typ. 0.85 0.9 30 7.3 20 1.0 6 -20 +2 450 0.05 35 , =3.3 V, = 1.55 µm, Pin= -18 dBm) 0 10 -4 RELATIVE SENSITIVITY (dB) BIT ERROR RATE -5 -10


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PDF G9911-14/-54 G9911-54) STM-64/OC-192) SE-171 KIRD1076E03
2006 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , ID Conditions =1.31 µm = 1.55 µm Dark state, R L= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 , f=100 MHz = 1.55 µm, PRBS=2 31-1, BER=10 -12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 7.0 4 +1 300 27 Typ. 0.85 0.9 32 9.0 10 1.0 6 , s Frequency response 5 (Ta=25 °C, Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 0 10 -4


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PDF G10342-14/-54 G10342-54) STM-64/OC-192) SE-171 KIRD1106E02
2006 - Not Available

Abstract:
Text: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA, 1.3/ 1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW (= 1.55 µm) l Differential output l , -40 to +85 Unit V V mA dBm °C °C s Electrical and optical characteristics (Ta=25 °C, = 1.55 µm, Vcc , Dark current Symbol R S Icc fc fc-L VBR Pmin Pmax Vomax ID Conditions =1.31 µm M=1 = 1.55 µm =1.31 µm M=1 Pin= -27 dBm *3 = 1.55 µm Dark state, RL= M=10, Pin= -27 dBm, -3 dB Pin= -27 dBm, -3 dB ID=100 µA Tc


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PDF G9910-14 SE-171 KAPD1016E03
2004 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9911-14/-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , ID Optical return loss ORL *3: Single-ended (Vout+) measurement Conditions λ=1.31 µm λ= 1.55 µm Dark state, R L=∞ λ= 1.55 µm, -3 dB λ= 1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 Ω, f=100 MHz λ= 1.55 µm, PRBS=2 31-1, BER=10-12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V λ=1.31/ 1.55 µm Min. 0.75 0.8 6.6 4.5 Typ. 0.85 0.9 30 7.3 20


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PDF G9911-14/-54 STM-64/OC-192) SE-171 KIRD1076E01
2007 - 509-TO

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/ 1.55 µm, 10 Gbps , ID Conditions =1.31 µm = 1.55 µm Dark state, R L= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 , f=100 MHz = 1.55 µm, PRBS=2 31-1, BER=10 -12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V =1.31/ 1.55 µm Min. 0.75 0.8 7.0 4 +1 300 27 Typ. 0.85 0.9 32 9.0 10 1.0 6 , (Ta=25 °C, Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 0 10 -4 RELATIVE SENSITIVITY (dB


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PDF G10342-14/-54 G10342-54) STM-64/OC-192) SE-171 KIRD1106E04 509-TO
2005 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/ 1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/ 1.55 µm band optical fiber communications , S *1 Condition Min. 0.75 0.8 Typ. 0.9 to 1.7 1.55 0.9 0.95 0.02 2 1 3 × 10-15 Max. 0.4 1.5 Unit µm µm A/W A/W nA GHz pF W/Hz1/2 =1.3 µm = 1.55 µm Dark current ID VR=5 V VR=5 V, RL=50 Cut-off frequency fc =1.3 µm, -3 dB Terminal capacitance Ct VR=5 V, f=1 MHz Noise equivalent power NEP VR=5 V, = 1.55


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PDF G9801 SE-171 KIRD1081E01
G9801

Abstract:
Text: PHOTODIODE InGaAs PIN G9801 , 1.3/ 1.55 µm, 2 GHz InGaAs PIN l : 2 GHz Typ. l : 20 pA Typ. l : 0.9 A/W Typ. (l=1.31 µm) l : 1 pF Typ. l s (Ta=25 °C) VR Max. Topr Tstg 20 -20 +70 -40 +85 V °C °C s (Ta=25 °C) p S *1 =1.3 µm = 1.55 µm ID VR=5 V VR=5 V, RL=50 fc =1.3 µm, -3 dB Ct VR=5 V, f=1 MHz NEP VR=5 V, = 1.55 µm *1: Min. 0.75 0.8 - Typ. 0.9 1.7 1.55 0.9 0.95 0.02 Max. 0.4


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PDF G9801 C5970 KIRDA0080JB 435-85581126-1TEL 434-3311FAX KIRD1081J01 G9801 KIRD1081J01
2004 - G9284-14

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9284-14 ROSA type, 1.3/ 1.55 µm, 10 Gbps Features Applications l 1.25 mm sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed response , NEP Tz Pmin Pmax Condition =1.31 µm = 1.55 µm Dark state, RL= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, DC to 10 GHz f=100 MHz 10 Gbps, NRZ, = 1.55 µm PRBS=231-1, BER=10-12 Extinction ratio=13 dB =1.31 , , = 1.55 µm, Extinction raito=13 dB, Vcc=Vpd=3.3 V Pin= -18 dBm, 30 mV/div., 20 ps/div. Pin= +1.0 dBm


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PDF G9284-14 SE-171 KIRD1068E02 G9284-14
2004 - photodiode 1 Gbps 1.55

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9393-14 ROSA type, 1.3/ 1.55 µm, 10 Gbps Features Applications l 1.25 mm sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed , = 1.55 µm Dark state, RL= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, DC to 10 GHz f=100 MHz 10 Gbps, NRZ, = 1.55 µm PRBS=231-1, BER=10-12 Extinction ratio=13 dB =1.31 µm Min. 0.70 0.75 7.0 , =31, NRZ, = 1.55 µm, Extinction ratio=13 dB, Vcc=Vpd=3.3 V Pin= -18 dBm, 30 mV/div., 20 ps/div. Pin


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PDF G9393-14 SE-171 KIRD1069E02 photodiode 1 Gbps 1.55 G9393-14 photodiode 1.0 Gbps 1.55 50 um photodiode KIRD1069E02 pin photodiode 10 gbps
2005 - G9801

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode G9801 series Receptacle type, 1.3/ 1.55 µm, 2 GHz G9801 series are high-speed receivers specifically developed for 1.3/ 1.55 µm band optical fiber communications , Symbol p Condition =1.3 µm = 1.55 µm Dark current ID VR=5 V VR=5 V, RL=50 Cut-off , =5 V, = 1.55 µm *1: Using a single mode optical fiber with a master plug. Photo sensitivity S *1 Min. 0.75 0.8 - Typ. 0.9 to 1.7 1.55 0.9 0.95 0.02 Max. 0.4 Unit µm µm A/W A/W


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PDF G9801 SE-171 KIRD1081E01
2004 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9393-14 ROSA type, 1.3/ 1.55 µm, 10 Gbps , : Capacitive coupling Condition λ=1.31 µm λ= 1.55 µm Dark state, RL=∞ λ= 1.55 µm, -3 dB λ= 1.55 µm, -3 dB Dark state, DC to 7.5 GHz f=100 MHz 10 Gbps, NRZ, λ = 1.55 µm PRBS=231-1, BER , 6.23-0.15 (Ta=25 ˚C, Vout+, Vcc=Vpd=3.3 V, λ= 1.55 µm, Pin= -18 dBm) PIN No. RELATIVE SENSITIVITY , FREQUENCY (GHz) KIRDB0335EA s Eye diagram Bit rate 10 Gbps, PN=31, NRZ, λ= 1.55 µm, Extinction raito


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PDF G9393-14 SE-171 KIRD1069E04
2004 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9284-14 ROSA type, 1.3/ 1.55 µm, 10 Gbps , Maximum receivable sensitivity Symbol R Icc fc fc-L NEP Tz Pmin Pmax Condition =1.31 µm = 1.55 µm Dark state, RL= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, DC to 7.5 GHz f=100 MHz 10 Gbps, NRZ, = 1.55 µm , °) KIRDB0310EB s Frequency response 5 (Ta=25 °C, Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 5.94 ± 0.05 , ) KIRDB0335EA s Eye diagram Bit rate 10 Gbps, PN=31, NRZ, = 1.55 µm, Extinction raito 14 dB, Vcc=Vpd=3.3 V


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PDF G9284-14 SE-171 KIRD1068E03
2004 - Not Available

Abstract:
Text: PHOTODIODE InGaAs PIN photodiode with preamp G9393-14 ROSA type, 1.3/ 1.55 µm, 10 Gbps , Pmax Condition =1.31 µm = 1.55 µm Dark state, RL= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, DC to 7.5 GHz f=100 MHz 10 Gbps, NRZ, = 1.55 µm PRBS=231-1, BER=10-12 Extinction ratio=14 dB Dark state, RL , +, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 5.94-0.1 6.35-0.1 1.0 6.23-0.15 +0 PIN No. 0 , Bit rate 10 Gbps, PN=31, NRZ, = 1.55 µm, Extinction raito 14 dB, Vcc=Vpd=3.3 V Pin= +2.5 dBm, 100 mV


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PDF G9393-14 SE-171 KIRD1069E03
2004 - Not Available

Abstract:
Text: PREVIOUS DATA PHOTODIODE InGaAs PIN photodiode with preamp G9393-14 ROSA type, 1.3/ 1.55 µm , Pmax Condition =1.31 µm = 1.55 µm Dark state, RL= = 1.55 µm, -3 dB = 1.55 µm, -3 dB Dark state, DC to 7.5 GHz f=100 MHz 10 Gbps, NRZ, = 1.55 µm PRBS=231-1, BER=10-12 Extinction ratio=14 dB Dark state, RL , , Vout+, Vcc=Vpd=3.3 V, = 1.55 µm, Pin= -18 dBm) 5.94-0.1 6.35-0.1 1.0 6.23-0.15 +0 PIN No , ) KIRDB0335EA s Eye diagram Bit rate 10 Gbps, PN=31, NRZ, = 1.55 µm, Extinction raito 14 dB, Vcc=Vpd=3.3 V


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PDF G9393-14 SE-171 KIRD1069E04
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