The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
UFM-M12 Texas Instruments UHF Transceiver
UTR-C10M Texas Instruments UHF Transceiver
UFM-A12WPA Texas Instruments UHF Transceiver
RI-UHF-STRAP-08 Texas Instruments UHF GEN2 STRAP 1-RFIDS
HFA3134IHZ96 Intersil Corporation Ultra High Frequency Matched Pair Transistors; SOT6; Temp Range: -40° to 85°C
HFA3135IHZ96 Intersil Corporation Ultra High Frequency Matched Pair Transistors; SOT6; Temp Range: -40° to 85°C

UHF-900MH Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: 2SC3777 NF Test Circuit 3 INPUT C1 900MH z ~5 p F C2 ~ 10 p F C3 ~ 10 p F C4


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PDF 1950B 2SC3777 5318M0/5137KI/0185KI 900MH 200MHz
2SC3512

Abstract: No abstract text available
Text: Vce = 5 V, 1c = 20mA — 6.0 — GHz Power jiain PG Vcf. = 5V. 1c = 20mA, f = 900MH / — 10.5 — dB


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PDF 2SC3512 2SC3512 900MH/ 900MHz.
25C4

Abstract: 2SC4197 2SC4260
Text: 3. S — GHz Conversion gain CG Vcc « 5V. Ic = 0.8mA. / = 900MH ?. — 39 — dB Noise figure NF


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PDF 2SC4260 Ta-25 25C4260 900MH? 30MHa 2SC4197. 25C4 2SC4197 2SC4260
3SK103

Abstract: 3SK138
Text: gain PG Vr>s » 6V. V 900MH / 5,0 tili â


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PDF 3SK138 25aCj 900MH/ 3SK103. 3SK103 3SK138
KSC2734

Abstract: samsung tuner Ta900 power supply samsung tv samsung tv K 3115
Text: vs. FREQUENCY vcc-ev _t« 900MH *. lc(mA), COLLECTOR CURRENT M 500 600 700 fyMHz), FREQUENCY


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PDF KSC2734 T-31-15 OT-23 1-930WH/ -930MHz 900MH* samsung tuner Ta900 power supply samsung tv samsung tv K 3115
2SC3775

Abstract: 1948B
Text: , TOKYO, 110 JAPAN 5318M0/5137KI/Ò185KI,TS Nò.1948-1/4 2SC3775 NF Test Circuit 3 1 900MH z C 1


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PDF 1948B l948B 2SC3775 2SC3775 1948B
marking my

Abstract: 2SC3773 p5a TRANSISTOR MARKING
Text: , Ueno, Taito-ku, TOKYO, 11Q JAPAN 5318M0/5137KI/01B5KI,TS No.1946-1/4 2SC3773 NF Test Circuit 3 r 900MH


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PDF 1946B l946B 2SC3773 MAG-12dB marking my p5a TRANSISTOR MARKING
ic 2754

Abstract: 2SC4364 2SC4401 5P J TRANSISTOR MARKING Marking TRANSISTOR 777
Text: 777- OUTPUT Unit (Resistance : ÌÌ) C 1 C 2 C 3 C 4 C 6 L 1 L 2 L 3 CH 900MH z -5p F F — 1


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PDF
2005 - ML8122MD

Abstract: 1900MH FJDL8122 FJDL8122-01 P-WSON10-2 oki electric on semiconductor
Text: =50) Pin=0dBm, 900MH Pin=0dBm, 1900MH Iso Pin=25dBm, 900MH Pin=25dBm, 1900MH RL Pin=0dBm, 900MH Pin=0dBm, 1900MH 2f0 Pin=25dBm, 900MH Pin=25dBm, 1900MH 3f0 Pin=25dBm, 900MH Pin=25dBm, 1900MH 3 IIP3 Pin=25dBm, 900+901MH Pin=25dBm, 1900+1901MH 1dB P1dB 900MH 1900MH 50%Vctl ON 90%/OFF


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PDF FJDL8122-01 ML8122MD ML8122MD 900MHz 34dBm 36dBm P-WSON10-2 1900MH FJDL8122 FJDL8122-01 oki electric on semiconductor
3SK186

Abstract: tuner LG RIA5
Text: = 10mA. 16 19 dB Noi« figure _NF / = 900MH / 3.0 4.5 dB • Mart,*,ufi-I HITACHI 3SK186


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PDF 3SK186 3SK186 tuner LG RIA5
2SC3777

Abstract: 5137K
Text: ci LI C2 7 C 3 L3 "ct. * ' C5 OUTPUT 777* 7/T 777* 777 777" 777- 900MH z C 1 C 2 0


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PDF 1950b 1950B 2SC3777 2SC3777 5137K
2SC3772

Abstract: No abstract text available
Text: .1945-1/4 2SC3772 NF Test Circuit 3 I 900MH z C 1 C 2 0 pF C 3 0 pF C 4 0 pF C 5 OpF L 1 W= 1 . 5mm, 1 = 2


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PDF 1945B 1945B 2SC3772 1945-H/M
2SC3127

Abstract: 2SC3128 2SC3510 25C312 2SCJ510 2SC312S
Text: 3.5 4.5 — GHz. Power gain PC Vet f 5V. le = 20mA, f = 900MH ?, 10.5 — dû Noise figure NF VCE =


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PDF 2SC3127- 2SC3128, 2SC3510 25C312Ã 2SCJ510 2SC3I27- 2SC312S 2SC3127, 2SC3127 2SC3128 2SC3510 25C312 2SCJ510
R27 transistor

Abstract: 2SC2932
Text: 2SC2932 NPN E P IT A X IA L PLA N A R T Y P E TEST CIRCUIT (f= 900MH *) Z i n = 50 ü rrr L, : Z0 =


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PDF 2SC2932 2SC2932 900MHz, 900MHz. R27 transistor
1951b

Abstract: 2SC3778 transistor UHF Marking TRANSISTOR 777
Text: - INPUT pVcc 2kn w 5F ' C7 / c- 777" 777" «r 13 -2-"c* 777" 777 777* 900MH z C 1 ~5 p F


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PDF 1951B 2SC3778 2034/2034A SC-43 7tlt17D7b 1951b 2SC3778 transistor UHF Marking TRANSISTOR 777
2sc3337

Abstract: IC 4435 4435 power ic 0311S
Text: 500M Hi. /= 900MH ?, Transfer Loss (iIH) 0.4 0.65 1TS (inS) 9.785 + /67.2S 46.32 + /I29.77 S


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PDF 2SC3337 2SC3337 IC 4435 4435 power ic 0311S
2SC3775

Abstract: 2SC4405
Text: VB INPUT C1 9vec CH L2 C2 C3 777" 777" 777" 777" 777 77T MST 13 _2- 4 OUTPUT 77T 900MH z C 1 ~5


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PDF 2SC4405-applied 2SC3775 2SC4405
Not Available

Abstract: No abstract text available
Text: 16 Power gain, IF=300MHz PM \ 8 dB f=0.9GHz 2b / mF 945MH z / lo= 900MH z ti


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PDF 25GHz fl23SbG5
Not Available

Abstract: No abstract text available
Text: 900MH z ~5pF C2 C3 ~1 O p F C4 ~1 O p F C5 ~1 O p F L1 W= 1 , 5mm, 1 = 2 5 m


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PDF 7TT707la 2SC3771 1944B
Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T Y P E TEST CIRCUIT (f= 900MH *) Z i n = 50 ü 7T 7 L


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PDF 2SC2932 2SC2932 900MHz, 900MHz.
Not Available

Abstract: No abstract text available
Text: ) OUTPUT 900MH z C1 ~ 5pF C2 ~ 10 p F C3 ~1 OpF C4 —1 0 p F C5 ~ 10 pF


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PDF 2SC4407 2SC4407-applied
2013 - Not Available

Abstract: No abstract text available
Text: 125 300 141 -90-2 * 9.00mH 22 125 300 310 -11-3 10.8mH 20 125


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PDF -550C 1000C
Line Matching Transformers

Abstract: TEA5971
Text: Inductance @1KHz, 0.1V > 900mH 1 -5 29 1 -5 37 7 -10 Winding Resistance Return loss


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PDF TEA5971 TEA5971 300-3500Hz 900mH Line Matching Transformers
bluetooth antenna design

Abstract: X band antenna mobile antenna design ebmgh5a EBMGH8A gps40
Text: (800/ 900MH ) DCS(1800MHz) PCS(1900MH) W-CDMA(2000MHz) Avg. Gain (dBi min.) VSWR (max


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PDF 800/900MH) 1800MHz) 1900MH) 2000MHz) JP800 IMT2000 bluetooth antenna design X band antenna mobile antenna design ebmgh5a EBMGH8A gps40
PDZ702NB

Abstract: PDZ70NB 405nm LED
Text: KODENSHI NEWS RELEASE 2008/2/28 ZnO/Si *ZnO/Si pn "PDZ70NB"* IC PDZ702NB 600400() 0.28A/W@P= 405nm PDZ702NB :600 400MH @VR=2V ():400 900MH @VR=2V 2.0(L)×1.4W)×0.8H)mm N PN 1. ( *LED 2. ( PN * * 1 / 3 KODENSHI NEWS RELEASE pn 0.1m 1m P+ N- Si0.1m 1m pn PN ZnO/Si (ZnO) pn ZnO pn ZnO P+ N- P+ ZnOSi ZnOSAW ITO LED LD p . .


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PDF PDZ70NB" PDZ702NB 405nm 400MH 900MH PDZ702NB PDZ70NB 405nm LED
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