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LT3519IMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C

UHF schottky diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SMD Codes

Abstract: TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
Text: MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W zener 4.7V 0.3W , 20 dB gain BC328-25 BC328-40 BC328-40 BC328-40 dual series MBD101 BC328-40 MBD701 UHF schottky diode , dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky 25V 100mA pnp dtr 30V 50mA , schottky diode 2N6517 npn Vce 350V Codes beginning with '2' Code 2 2 (blue) 2 2 (white) 20 -20 20F 20V , Equivalent/Data BAT16 schottky diode pin diode npn RF fT8GHz 12dB@2GHz 29-5 pF varicap npn Rf fT 5GHz 0.2A


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Text: vhf pin diode MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W , -40 dual series MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B Hyperabrupt varicap dual cc 3GHz RF pin diode dual cc Hyperabrupt varicap series UHF schottky diodes 2N2907A npn 45V , 100mA Schottky RF 20V 100mA npn/pnp dtr 47k+47k dual Si diode 200V 100mA dual ca 13V 0.3W zener dual ca , 10k + 10k dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky 25V 100mA pnp dtr


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PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: dual schottky 250V 0.4A 200V vhf pin diode MBD201 MBD301 UHF schottky diode MV2105 varicap MV2106 , MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B Hyperabrupt varicap dual cc 3GHz RF pin diode dual cc Hyperabrupt varicap series UHF schottky diodes 2N2907A npn 45V 0.8A 350mW npn , bias res npn/pnp 10k base res dual cc Si diode 200V 100mA dual cc Schottky 25V 100mA dual cc Schottky , SOT346 SOT89 SOT23 SOT323 SOT323 SOT23 Leaded Equivalent/Data BAT16 schottky diode pin diode npn RF


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PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: UHF schottky diode MV2105 varicap MV2106 varicap npn 32V 0.8A 4.3V 0.3W zener 4.7V 0.3W zener MV2107 , schottky dual zener 4.7V 0.15W schottky diode 4V 100mA dg mosfet MOSIC 5V uhf tv tuners pnp dtr 10k + 47k , 18GHz schottky diode 18GHz schottky ring quad 18GHz schottky dual biased dg mosfet MOSIC 5V uhf tv , MBD101 BC328-40 MBD701 UHF schottky diode BC328 BC328 1N4148 1N4148 BCX38B SOT23 SOT23 SOT23 SOT23R , band switch diode 56-2.7 pF varicap npn Rf 8GHz MRF941 30V 0.2A schottky diode dual ca 10V 0.3W zener


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PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
1998 - siemens diodes

Abstract: di_hit_hsr276_19930908 BB219 HSMS-286x Motorola diodes BAT150 hitachi part naming 1SV186 hitachi naming convention BB515
Text: : 182-02, SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_1n5444a_19930908 1n5444a , , SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_mmbd301l_19930908 mmbd301l: SOT23 , Vendor Component Libraries High-Frequency Diode Library December 2003 Notice The information , Contents 1 High-Frequency Diode Library Agilent Technologies Diodes , . Index 1-2 1-6 1-7 1-9 1-10 1-11 1-12 iii iv Chapter 1: High-Frequency Diode


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PDF o19930908 1sv186 1sv186: 1sv214 1sv214: OD323, 1sv215 1sv215: siemens diodes di_hit_hsr276_19930908 BB219 HSMS-286x Motorola diodes BAT150 hitachi part naming hitachi naming convention BB515
1998 - motorola diodes

Abstract: HSMS8101 BB219 di_hit_hsr276_19930908 HSMS2825 BB515 hsms282n HSMS2850 HSMS-285C HSMS2820
Text: : 182-02, SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_1n5444a_19930908 1n5444a , , SCHOTTKY if(max)=NA, Vr(max)=4, P(max)=280, UHF Mixer di_mot_mmbd301l_19930908 mmbd301l: SOT23 , Vendor Component Libraries High-Frequency Diode Library September 2004 Notice The , High-Frequency Diode Library Agilent Technologies Diodes , . Index 1-2 1-6 1-7 1-9 1-10 1-11 1-12 iii iv Chapter 1: High-Frequency Diode


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PDF 1sv186 1sv186: 1sv214 1sv214: OD323, 1sv215 1sv215: motorola diodes HSMS8101 BB219 di_hit_hsr276_19930908 HSMS2825 BB515 hsms282n HSMS2850 HSMS-285C HSMS2820
2001 - diode 349A

Abstract: 20 GHz schottky diode nf amplifier low voltage UHF schottky diode
Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE THERMAL CHARACTERISTICS 1 Symbol PD Characteristic , under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz , °C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0


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PDF MMDL101T1 diode 349A 20 GHz schottky diode nf amplifier low voltage UHF schottky diode
diode 349A

Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
Text: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and , . MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE · Very Low Capacitance - Less than 1.0 pF @ Zero Volts · Low , Note2-Noise figure measured with diode under test in tuned diode mount using UHF noise source and local , R = 10 µA) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise , , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF


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PDF MMDL101T1 diode 349A S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
2001 - diode 349A

Abstract: mmbd110 20 GHz schottky diode
Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE THERMAL CHARACTERISTICS 1 Symbol PD Characteristic , under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz , °C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0


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PDF MMDL101T1 OD-323 diode 349A mmbd110 20 GHz schottky diode
2002 - sod87 Melf

Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1PS76SB62 1n5819 melf BAS70 MELF SOD532 1PS76SB21
Text: diodes are used for UHF applications · Low VF Schottky diodes offer a much lower forward voltage drop , especially useful in high current, low voltage applications, a low VF Schottky diode (e.g. BAT754) reduces forward voltage by at least 20% compared to a standard Schottky diode (e.g. BAT54). · Low CD Schottky , capacitance. Compared to a standard Schottky diode (e.g. BAT54), the low CD Schottky diode 1PS79SB63 offers , ultra fast switching behaviour · low CD Schottky diodes are used for UHF applications RF in


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2001 - diode 349A

Abstract: S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky
Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE · Very Low , Note2-Noise figure measured with diode under test in tuned diode mount using UHF noise source and local , otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f =


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PDF MMDL101T1 diode 349A S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky
MBD102

Abstract: diode 349A dioda bridge noise source diode
Text: MBD102 (SILICON) SILICON HOT-CARRIER DIODE ( SCHOTTKY BARRIER DIODE ) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits , specific requirements. SILICON HOT-CARRIER UHF MIXER DIODE B C dim mil lin eters inc h es , CIRCUIT NOISE FIGURE METER H.P. 342A LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN , — Noise figure measured with diode under test in tuned diode mount using UHF noise source and


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PDF MBD102 MBD102 diode 349A dioda bridge noise source diode
2001 - MMBD110T1

Abstract: MMDL101T1
Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , 1.0 GHz · Device Marking: 4M http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM , tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power , Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) IR Noise Figure (f = 1.0 GHz, Note 2) NF


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PDF MMDL101T1 r14525 MMDL101T1/D MMBD110T1 MMDL101T1
MBI-101

Abstract: noise diode ik60
Text: MBI-101 (SILICON) SILICON HOT-CARRIER MICRO-I DIODE ( SCHOTTKY BARRIER DIODE ) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. • The Rugged Schottky Barrier Construction Provides Stable Char- acteristics by Eliminating the , Volts Diode Capacitance (VR = 0,f- 1.0MHz, Note 1) cT - 0.88 1.0 pF Forward Voltage llF » 10mA) VpHI , Case Capacitance (Note 1 ) If - 1.0 MHz, Lead Length « 1/16") cc - 0.15 - pF SILICON HOT-CARRIER UHF


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PDF MBI-101 MBI-101 noise diode ik60
DIODE CQ 521

Abstract: MBD101 noise diode 01ck
Text: MBD101 (SILICON) SILICON HOT-CARRIER DIODE ( SCHOTTKY BARRIER DIODE ) . . . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits , Volts • High Forward Conductance - 0.48 Volts (Typ) @ lp = 10 mA SILICON HOT-CARRIER UHF MIXER DIODE , Schottky Barrier Construction Provides Stable Char- acteristics by Eliminating the "Cat Whisker" Contact , ) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR - 10,iA) V(BR)R 4.0 5.0 - Volts Diode


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PDF MBD101 DIODE CQ 521 MBD101 noise diode 01ck
MBD101

Abstract: ATW SOT23 MBD101 equivalent
Text: SILICON HOT-CARRIER DIODE ( SCHOTTKY BARRIER DIODE ) . . . designed prim arily for UHF m ixer , (Boonton Electronics M odel 75A or equivalent). Note 2 - Noise figure m easured w ith diode under test in tuned diode m o u n t using UHF noise source and local oscil lator (LO) frequency o f 1.0 GHz. The LO , ount package. · The Rugged Schottky Barrier Construction Provides Stable Characteristics by Elim , Volts CASE 318-07, STYLE 8 SOT-23 (TO-236AB) Tj T S tfl SILICON HOT-CARRIER UHF MIXER DIODES


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PDF MBD101* MMBD101LT1* O-226AC) MBD101 ATW SOT23 MBD101 equivalent
2001 - MBD101

Abstract: MBD101 equivalent
Text: ON Semiconductort Schottky Barrier Diodes Designed primarily for UHF mixer applications but , under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz , Model 250A RX Meter). UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P , MBD101 MMBD101LT1 ON Semiconductor Preferred Devices SILICON SCHOTTKY BARRIER DIODES 1 2 CASE , CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode


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PDF MBD101 MMBD101LT1 MMBD101LT1 MBD101 equivalent
SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 1SS242 Am tuning varicap 4007F 1SV211 S1B66
Text: Band VHF SMQ 3SK151 3SK153 USQ * 3SK260 *3SK259 Schottky Diode UHF SMC use 1SS242 1SS315 IF A m p. Tuning Varicap Diode UHF Wide Band VHF SMC SMC 1SV161 1SV226 1SV153A 1SV211 1SV227 1SV153 , SM 2SC3121 Schottky Diode SM Q 1 S S2 3 9 SM 1 S S1 5 4 Si Dual Gate M O S FET SM Q 3SK199 3 SK2 3 , Tuning Varicap SM C 1 SV153A 1SV224 use 1S V 2 14 1SV230 SSC » 1SV254 » 1SV258 Schottky Diode SM C 1 S , »NEW * 2 SC 5 0 8 7 Bi-Transistor SM Q » 2SC 50 8 7 * 2 SC 50 9 2 Schottky Diode SM C 1 S S2 3 9


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PDF 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 1SS242 Am tuning varicap 4007F 1SV211 S1B66
2001 - 2.2 GHz local oscillator

Abstract: power Schottky bridge MBD101 MMBD101L MMBD101LT1 diode 349A G15-2
Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes MMBD101LT1 Designed primarily for UHF , capacitance bridge UHF NOISE SOURCE H.P. 349A NOISE FIGURE METER H.P. 342A DIODE IN TUNED MOUNT , Noise figure measured with diode under test in tuned diode mount using UHF noise source and local , Surface Mount package. SILICON SCHOTTKY BARRIER DIODES · Low Noise Figure-6.0dB Typ@1.0GHz · Very , (BR)R 7.0 10 Max - Unit Volts (IR= 10µAdc) Diode Capacitance (VR= 0,f =1.0MHz,Note1


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PDF MMBD101LT1 236AB) MBD101 2.2 GHz local oscillator power Schottky bridge MBD101 MMBD101L MMBD101LT1 diode 349A G15-2
2001 - Not Available

Abstract: No abstract text available
Text: Schottky Barrier Diodes MMBD101LT1 Designed primarily for UHF mixer applications but suitable , with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency , SCHOTTKY BARRIER DIODES • Low Noise Figure—6.0dB Typ@1.0GHz • Very Low Capacitance—Less Than , 10 Max — Unit Volts (IR= 10µAdc) Diode Capacitance (VR= 0,f =1.0MHz,Note1) Forward , AND SPECIFICATIONS Note 1 — C C and C T are measured using a capacitance bridge UHF NOISE


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PDF MMBD101LT1 236AB) MBD101
2006 - 5M MARKING CODE SCHOTTKY DIODE

Abstract: Diode marking CODE 5M SOD onsemi 035 Schottky diode "Noise Source" MMBD110T1 MMDL101T1 MMDL101T1G
Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , Figure - 6.0 dB Typ @ 1.0 GHz · Pb-Free Package is Available 1.0 pF SCHOTTKY BARRIER DIODE , Max 7.0 10 Unit - V(BR)R Diode Capacitance (VR = 0, f = 1.0 MHZ), (Note 2)* CT , UHF NOISE SOURCE H.P. 349A 2. CC and CT are measured using a capacitance bridge (Boonton


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PDF MMDL101T1 MMDL101T1/D 5M MARKING CODE SCHOTTKY DIODE Diode marking CODE 5M SOD onsemi 035 Schottky diode "Noise Source" MMBD110T1 MMDL101T1 MMDL101T1G
2000 - MMBD110T1

Abstract: MMDL101T1
Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high­efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , 1.0 GHz · Device Marking: 4M http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE MAXIMUM , measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO , ) Min 0.5 0.6 V(BR)R Diode Capacitance (VR = 0, f = 1.0 MHZ, Note 1) IR Noise Figure


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PDF MMDL101T1 r14153 MMDL101T1/D MMBD110T1 MMDL101T1
2010 - Not Available

Abstract: No abstract text available
Text: MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 CATHODE MAXIMUM RATINGS Symbol Value Unit VR , test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The , Diode Capacitance (VR = 0, f = 1.0 MHZ), (Note 2)* CT Reverse Leakage (VR = 3.0 V) IR


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PDF MMDL101T1G MMDL101T1/D
2010 - MMBD110T1

Abstract: MMDL101T1G noise diode 5M MARKING CODE SCHOTTKY DIODE
Text: MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital , ://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 CATHODE MAXIMUM RATINGS Rating Symbol Value , test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The , otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Symbol V(BR)R Diode


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PDF MMDL101T1G MMDL101T1/D MMBD110T1 MMDL101T1G noise diode 5M MARKING CODE SCHOTTKY DIODE
5082-2804

Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-XXXX 5082-2826 5082-2811 5082-2835 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for low turn-on voltage. This part is Ideally suited for UHF mixing needs of the CATV market.Vbr=8V. Vf=340mV. Ct=1pF. 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose


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PDF 340mV. 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 5082-28xx T25/1N57xx 5082-2804 5082-2805 1N5712 5082-2080 2800-Series 5082-XXXX 5082-2826 5082-2811 5082-2835 RS-296-D
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