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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

UG 77A DIODE Datasheets Context Search

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UG 77A DIODE

Abstract:
Text: Current Continuous Source Current ( diode conduction) Power Dissipation ® Power Dissipation ® Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt @ Junction and , Rise Time Ir k s Qg ug s Qgd *d (on ) tdjoff) tf Cjss c '-'rss Turn-Off Delay Time Fall , Current (Body Diode ) Pulsed Source Current (Body Diode ) C v Diode Forward Voltage Reverse Recovery Time , )Dsg, T j <150°C P-Channel Isd - *2.9A, di/dt < - 77A /ps, Vqq < V(br)dss> Tj < 150°C N-Channel


OCR Scan
PDF IRF7317 C-142 C-143 UG 77A DIODE mosfet p-channel 300v MOSFET N-CH 200V DT92A international rectifier 137 IRF7317 ug 77A
2012 - FMVSS302

Abstract:
Text: Abrasion Test Wheel Calibrase H-18 Abrasion Test Load 500g Room Temperature 77Â °F Humidity , Spiral White with Beige and Black Stripe Clear with Red and Black Spiral UG Uptown Green UY


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PDF 3/16reen FMVSS302
1054L

Abstract:
Text: voltage UG ! -45 V Zero signal dc plate current I A Leer 1.1 A DC plate current /a 1.6 A DC grid 2 current , dissipation can be seen in the cooling air diagram, valid for 25°C/ 77 °F inlet temperature at 1 bar air , 25°C/ 77 °F Valid for closed cooling cycle with distilled water. psyst = 2.5 bar U = 70°C/158°F 0 1


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PDF 1054L Q51-X1054 Q53-X1054 INTERLOCK VALVE rs tube thyratron
BYQ28E

Abstract:
Text: BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG (F,B)10BCT thru UG (F,B)10DCT Vishay General Semiconductor , 100 150 200 V Total device per diode IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 µs IRSM 0.2 A VC 8 KV TJ, TSTG , , UG (F,B)10BCT thru UG (F,B)10DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C


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PDF BYQ28E 10BCT 10DCT ITO-220AB O-220AB BYQ28E BYQ28EF UGF10 O-263AB BYQ28EB-200HE3 BYQ28EF UG10 UGF10
2009 - J-STD-002

Abstract:
Text: New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor Dual Common-Cathode , Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM , Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 , reverse current per diode at VRWM TJ = 25 °C TJ = 125 °C VF 1.75 1.50 V TJ = 25 °C TJ = 100 °C TJ = 125 C Maximum instantaneous forward voltage per diode (1) IF = 4 A IF = 4 A


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PDF O-220AB ITO-220AB J-STD-020, O-263AB O-220AB ITO-220AB O-263AB 2002/95/EC 2002/96/EC 18-Jul-08 J-STD-002 JESD22-B102
J-STD-002B

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , load per diode IFSM 175 A TJ, TSTG - 65 to + 150 °C VAC 1500 V Operating , UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode , blocking voltage per diode TA = 25 °C TA = 100 °C Maximum reverse recovery time per diode at IF


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PDF 18ACT 18DCT O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB J-STD-002B JESD22-B102D UG18ACT
2008 - Not Available

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only , Document Number: 88759 Revision: 09-Nov-07 www.vishay.com 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay , instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Maximum reverse recovery time per diode Maximum stored charge per


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PDF 18ACT 18DCT O-220AB ITO-220AB UG18xCT UGF18xCT O-263AB J-STD-020C,
2006 - BYQ28E

Abstract:
Text: BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG (F,B)10BCT thru UG (F,B)10DCT Vishay General Semiconductor , VDC 100 150 200 V Total device per diode IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 µs IRSM 0.2 A VC 8 KV TJ, TSTG , Document Number 88549 22-Aug-06 www.vishay.com 1 BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG (F,B


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PDF BYQ28E 10BCT 10DCT ITO-220AB O-220AB BYQ28E BYQ28EF UGF10 BYQ28EF ug DIODE ON UG10 UGF10
2008 - byt28 200

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min total device per diode SYMBOL VRRM VRWM VRMS VDC IF(AV) IFSM TJ, TSTG VAC BYT28 , Document Number: 88552 Revision: 06-Nov-07 www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B , otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum reverse current per


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PDF 10FCT 10GCT, BYT28 O-220AB ITO-220AB BYT28, BYT28F, UGF10 O-263AB byt28 200 BYT28F-400 ug DIODE ON
2012 - Not Available

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only , www.vishay.com 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode


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PDF 18ACT 18DCT O-220AB ITO-220AB UG18xCT UGF18xCT J-STD-020, O-263AB ITO-220AB
2006 - ug DIODE ON

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 minute Total device per diode SYMBOL VRRM VRWM VRMS VDC IF(AV) IFSM TJ, TSTG VAC , °C V UNIT V V Document Number 88552 22-Aug-06 www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT , unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum reverse


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PDF 10FCT 10GCT, BYT28 O-220AB ITO-220AB BYT28, BYT28F, UGF10 O-263AB ug DIODE ON
2006 - ug DIODE ON

Abstract:
Text: UG (F,B)8HCT & UG (F,B)8JCT New Product Vishay General Semiconductor Dual Common-Cathode , current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage , 600 UNIT V V V V A A °C V Document Number 88766 18-Aug-06 www.vishay.com 1 UG (F,B)8HCT & UG , instantaneous forward voltage per diode IF = 4 A (1) IF = 4 A Maximum DC reverse current per diode at VRWM Maximum reverse recovery time per diode Maximum reverse recovery time per diode Typical softness factor


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PDF O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05 ug DIODE ON
J-STD-002B

Abstract:
Text: Characteristics Per Diode www.vishay.com 3 New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General , New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor Dual Common-Cathode , A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode , Document Number: 88766 Revision: 06-Aug-07 600 V www.vishay.com 1 New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise


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PDF O-220AB ITO-220AB J-STD-020C, O-263AB ITO-220AB O-263AB 2002/95/EC 2002/96/EC 08-Apr-05 J-STD-002B JESD22-B102D ug DIODE ON
DIODE UG 77

Abstract:
Text: Per Diode www.vishay.com 3 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 , UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage , Number: 88552 Revision: 06-Aug-07 Total device per diode 400 V IF(AV) 10 5.0 A IFSM 60 A TJ, TSTG - 40 to + 150 °C VAC 1500 V www.vishay.com 1 UG (F,B


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PDF 10FCT 10GCT, BYT28 ITO-220AB O-220AB BYT28F, UGF10 BYT28, O-263AB DIODE UG 77 DIODE UG 96 BYT28F UG10
2008 - Not Available

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only , www.vishay.com 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode


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PDF 18ACT 18DCT O-220AB ITO-220AB UG18xCT UGF18xCT J-STD-020, O-263AB ITO-220AB
2008 - ug DIODE ON

Abstract:
Text: Diode Document Number: 88766 Revision: 09-Nov-07 www.vishay.com 3 New Product UG (F,B)8HCT & , New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor Dual Common-Cathode , superimposed on rated load per diode Operating junction and storage temperature range Isolation voltage (ITO , : 88766 Revision: 09-Nov-07 www.vishay.com 1 New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay , instantaneous forward voltage per diode (1) TEST CONDITIONS IF = 4 A IF = 4 A TJ = 25 °C TJ = 125 °C TJ = 25 °C


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PDF O-220AB ITO-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05 ug DIODE ON
2009 - J-STD-002

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 175 A , www.vishay.com 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS , voltage per diode (1) 9.0 A 20 A 5.0 A SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT , rated DC blocking voltage per diode TA = 25 °C TA = 100 °C Maximum reverse recovery time per


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PDF 18ACT 18DCT O-220AB ITO-220AB J-STD-020, O-263AB UGF18xCT UG18xCT O-220AB ITO-220AB J-STD-002 JESD22-B102 UG18ACT
2009 - BYT28

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , sine-wave superimposed on rated load per diode Operating junction and storage temperature range Isolation , -Nov-07 total device per diode V IF(AV) 10 5.0 A IFSM 60 A TJ, TSTG - 40 to + 150 , following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor


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PDF 10FCT 10GCT, BYT28 ITO-220AB O-220AB BYT28F, UGF10 BYT28, O-263AB BYT28B BYT28F DIODE UG 96 UG10 ug10gct
2006 - UG DIODE

Abstract:
Text: Capacitance Per Diode Document Number 88759 18-Aug-06 www.vishay.com 3 UG (F,B)18ACT thru UG (F,B , UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , superimposed on rated load per diode IFSM 175 A TJ, TSTG - 65 to + 150 °C VAC 1500 V , 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = , per diode (1) at 9.0 A at 20 A at 5.0 A SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT UNIT VF


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PDF 18ACT 18DCT O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB UG DIODE J-STD-002B JESD22-B102D UG18ACT
2013 - BYT28

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , ms single half sine-wave superimposed on rated load per diode Operating junction and storage , : 88552 Revision: 06-Nov-07 total device per diode V IF(AV) 10 5.0 A IFSM 60 A , www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor , 1.30 1.40 1.05 V TJ = 25 °C TJ = 100 °C Maximum reverse current per diode at VRRM


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PDF 10FCT 10GCT, BYT28 ITO-220AB O-220AB BYT28F, UGF10 BYT28, O-263AB
2012 - BYT28

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , 100 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode , heatsink t = 1 min total device per diode SYMBOL VRRM VRWM VRMS VDC IF(AV) IFSM TJ, TSTG VAC BYT28 , www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor , voltage per diode (1) Maximum reverse current per diode at VRRM Maximum reverse recovery time per diode


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PDF 10FCT 10GCT, BYT28 O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB
Not Available

Abstract:
Text: New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor Dual Common-Cathode , load per diode IFSM 65 A TJ, TSTG - 55 to + 150 °C VAC 1500 V Operating , www.vishay.com 1 New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor ELECTRICAL , Maximum DC reverse current per diode at VRWM TJ = 25 °C TJ = 125 °C VF 1.75 1.50 V TJ = 25 °C TJ = 100 °C TJ = 125 C Maximum instantaneous forward voltage per diode (1) IF = 4 A


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PDF O-220AB ITO-220AB J-STD-020, O-263AB O-220AB ITO-220AB O-263AB 2002/95/EC 2002/96/EC 2002/95/EC.
2012 - Not Available

Abstract:
Text: UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Dual , 100 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode , heatsink t = 1 min total device per diode SYMBOL VRRM VRWM VRMS VDC IF(AV) IFSM TJ, TSTG VAC BYT28 , www.vishay.com 1 UG (F,B)10FCT & UG (F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor , voltage per diode (1) Maximum reverse current per diode at VRRM Maximum reverse recovery time per diode


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PDF 10FCT 10GCT, BYT28 O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB
2012 - Not Available

Abstract:
Text: UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast , rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only , www.vishay.com 1 UG (F,B)18ACT thru UG (F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode


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PDF 18ACT 18DCT O-220AB ITO-220AB UG18xCT UGF18xCT J-STD-020, O-263AB ITO-220AB
2012 - Not Available

Abstract:
Text: New Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor Dual Common-Cathode , superimposed on rated load per diode Operating junction and storage temperature range Isolation voltage (ITO , Product UG (F,B)8HCT & UG (F,B)8JCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) TEST , diode at VRWM IR Maximum reverse recovery time per diode Maximum reverse recovery time per diode


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PDF O-220AB ITO-220AB J-STD-020, O-263AB ITO-220AB 2002/95/EC 2002/96/EC 2011/65/EU
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