The Datasheet Archive

SF Impression Pixel

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
UES1101SM Microsemi Corporation Chip1Stop 38 $36.80 $27.80

No Results Found

Show More

UES1101 datasheet (5)

Part Manufacturer Description Type PDF
UES1101 BKC International 2.5 Amp Voidless Fast Switching Rectifiers, Hard Glass Tungsten Scan PDF
UES1101 Microsemi Rectifier Scan PDF
UES1101 Microsemi Rectifiers, High Efficiency, 2.5A Scan PDF
UES1101 Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
UES1101 Unitrode International Semiconductor Data Book 1981 Scan PDF

UES1101 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BYV27

Abstract: BYV27-100 UES1101 BYV27-150 BYV27-50 UESI102 UES1103 BYV-27-100
Text: RECTIFIERS High Efficiency, 2.5A UES1101 BYV27-50 üES1102 BYV27-100 UES1103 BYV27-150 FEATURES • Very Fast Recovery Times • Very Low Torward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. ABSOLUTE MAXIMUM RATINGS UES1101 , ., = 100°C T., = 25° C TJ = 100°C Time* UES1101 50V ,975V ,895V UESI102 100V @ @ Ißk 50/jA


OCR Scan
PDF UES1101 BYV27-50 ES1102 BYV27-100 UES1103 BYV27-150 UESU03 BYV27-50 BYV27 BYV27-150 UESI102 BYV-27-100
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS UES1101 – UES1103 2.5A HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS Rating Symbol UES1101 UES1102 UES1103 Peak inverse voltage VR 50 100 150 Maximum average DC output at TL = 75°C, L = 3/8” IO 2.5 A Non-repetitive surge current at , forward voltage @ VR TJ = 25°C TJ = 100°C 0.975V @ 2A 0.895V @ 2A Volts UES1101 , SEMICONDUCTORS UES1101 – UES1103 144 Market Street Kenilworth NJ 07033 USA 2.5A HIGH-EFFICIENCY


Original
PDF UES1101 UES1103 UES1102 MIL-PRF-19500,
BYV27-50

Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Text: RECTIFIERS High Efficiency, 2.5A FEATURES · Very Fast Recovery Times · Very Low Forward Voltage · Small Size · Convenient Package UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. ABSOLUTE MAXIMUM RATINGS UES1101 UES1X02 , 100V 150V ln' 1.0 A , Intc = V dA Type UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27


OCR Scan
PDF UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1X02 UES1103 BYV27-150 UES1100
UES1102

Abstract: unitrode BYV27-100 BYV27-150 UES1101-UES1103 UES1101 UES1103 BYV27-50 BYV27 UES1100
Text: ) 326-6509 • TELEX 95-1064 48-24 PRINTED IN U.S.A. RECTIFIERS High Efficiency, 2.5A UES1101-UES1103 , €”55°C +175°C MECHANICAL SPECIFICATIONS UES1101-UES1103 Band indicates u ^ I 155" TYP 3.9mm J .028- = .001 I , " MAX 6.35mm 1.62S" MIN -1- BODY A 293 UNITRODE UES1101-UES1103 ELECTRICAL SPECIFICATIONS , -100 BYV27-150 UES1101 UESI 102 UES1103 Peak Inverse Voltage, Vâ , //A 25nS BYV27-150 150V 5A 2.5A Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C UES1101 50V


OCR Scan
PDF BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 UES1102 unitrode UES1101-UES1103 UES1103 BYV27 UES1100
BKC Semiconductors

Abstract: DSAIH0002563 UES1101
Text: 2.5 Amp Voidless Fast UES1101 thru Switching Rectifiers Hard Glass Tungsten Applications UES1103 For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite , °C (V) nS 25 25 25 Type UES1101 UES1102 UES1103 Volts 50 100 150 Vofts 0.975 0.975 0.975 , ) 681-0392 · fax: (978) 681-9135 1171763 OOOObO? Mb3 3 */ UES1101 thru UES1103 2.5 Amp Fast


OCR Scan
PDF UES1101 UES1103 UES1101 UES1103 117H33 BKC Semiconductors DSAIH0002563
UES1102

Abstract: UES1101 DO-213AB UES1103 BKC Semiconductors
Text: 2.5 Amp Voidless Fast Applications UES1101 thru UES1103 Switching Rectifiers Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They ar§ i#ai lor use in industrial, aircraft or satellite pbv^^ypplies. BKC can produce MIL equivalents of high reliability parts \fiMh infernal source control drawings , ° C Cfsm) (W Type Volts Amps Volts Volts |JA pA Amps nS UES1101 50 2.5 0.975 0.895 2 50 35 25


OCR Scan
PDF UES1101 UES1103 UES1101 UES1102 UES1103 LL-41 DO-213AB) DO-213AB BKC Semiconductors
BYV27-100

Abstract: BYV27-150 BYV27-50 UES1101 BYV27 UES1102 UES1103 UES1100
Text: -100 BYV27-150 UES1101 UESI 102 UES1103 Peak Inverse Voltage, Vâ , //A 25nS BYV27-150 150V 5A 2.5A Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C UES1101 50V


OCR Scan
PDF BYV27-50 BYV27-100 BYV27-150 UES1103 UES1101 25Vdc BYV27 UES1102 UES1103 UES1100
Not Available

Abstract: No abstract text available
Text: RATINGS UES1101 Peak Inverse Voltage, Vn . Maximum , °C UES1101 UESI102 UES1103 Tj = 165°C Tj = 25°C Tj = 165°C 1.25V @ 5A .85V 1/jA , UES1101 BYV27-50 UES1102 BYV27-100 UES1103 BYV27-150 25 50 75 100 125 Typical Reverse


OCR Scan
PDF UESI101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 100ms
BKC Semiconductors

Abstract: No abstract text available
Text: 2.5 Amp Voidless Fast UES1101 thru Switching Rectifiers Hard Glass Tungsten Applications UES1103 For use in hostile environments such as military and aerospace. Used where higher current, surge and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies. BKC can produce MIL equivalents of high reliability parts with internal source control , Type UES1101 UES1102 UES1103 Volts 50 100 150 Amps 2.5 2.5 2.5 0.25A Volts 0.975 0.975


OCR Scan
PDF UES1101 UES1103 con33 UES1101 UES1102 LL-41 DO-213AB) BKC Semiconductors
2010 - 1N5806

Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,200 PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series BACKSIDE CATHODE R4 (22-March 2010) w w


Original
PDF CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 22-March 1N5806 CPD17 UES1106
Not Available

Abstract: No abstract text available
Text: UES1101 Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current2.5 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage975m @I(FM) (A) (Test Condition)2.0 @V(RM) (V) (Test Condition) I(RM) Max.(A) Reverse Current2.0u @V(R) (V)(Test Condition) I(RM) Max.(A) Pk. Rev. Current50u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)100# Semiconductor Material


Original
PDF UES1101 Voltage50 Time25n Voltage975m Current50u
2003 - 1N5806

Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series BACKSIDE CATHODE 145


Original
PDF CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 19-September 1N5806 mesa die CPD17 UES1106
UES1106

Abstract: data sheet 1N5806 1N5802 1N5806 CMR3U-01 CPD17 UES1101
Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788


Original
PDF CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 24-August UES1106 data sheet 1N5806 1N5806 CPD17
Not Available

Abstract: No abstract text available
Text: RECTIFIERS U ESI 101 UESI102 UES1103 High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27-150 FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in m any switching applications. Particularly suited where very fast recovery and low forward voltage are required. Very Fast Recovery Tim es Very Low Forward Voltage Sm all Size Convenient Package ABSOLUTE MAXIMUM RATINGS UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27-150 Peak Inverse Voltage, VR


OCR Scan
PDF UESI102 UES1103 BYV27-50 BYV27-100 BYV27-150 UES1101 UES1102
pin function of l298

Abstract: ic l298 l298 L298 features note L298 pin diagram L298 motor driver L298 driver ic l298 for dc motor dc MOTOR L298 L298 IC
Text: D1 TO D4: UES1101 OR EQUIVALENT OR UC3610 DIODE ARRAY Unitrode Integrated Circuits Corporation 7


OCR Scan
PDF UES1101 UC3610 pin function of l298 ic l298 l298 L298 features note L298 pin diagram L298 motor driver L298 driver ic l298 for dc motor dc MOTOR L298 L298 IC
ES1002

Abstract: 400v 70a UES2402 UES1306
Text: Reverse Recovery Time* 25nS q I -H II O o o Type PIV Tj = 25» C UES1101 UES1102 UES1103


OCR Scan
PDF 1N5802 1N5803 1N5804 1N5805 1N5806 1N5B07 1N5808 1N5809 1N5810 1N5811 ES1002 400v 70a UES2402 UES1306
P 477

Abstract: 9938 G TA 7719 UES1106HR2 JANTX1N5804US 1N6621
Text: JANTXV1N5802US UES1101 U ES1101SM UPR5 1NS803 1N5804 1N5804US JAN1N5804 JAN1N5804US JANS1N5804 JANS1N5804US


OCR Scan
PDF DO-15 P 477 9938 G TA 7719 UES1106HR2 JANTX1N5804US 1N6621
USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE UT347 T0447 USD1140 150A 100V gto USD245
Text: * UES1303 .850 @ 6A 30ns t wm V Vf U UES1001 .895 @ 1A 25ns 1N5802* UES1101 .895 I® 2A 25ns


OCR Scan
PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE UT347 T0447 USD1140 150A 100V gto USD245
2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1n4007 - 2n4001 2N698 SCR 1N589 1N233A 2N3304 1N20461
Text: ) 1N5803 (75V) 1N5804 (100V) 1N5805 (125V) 1N5806 (150V) UES1101 (50V) UES1102 100V) UES1103 (150V) 3.0


OCR Scan
PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1n4007 - 2n4001 2N698 SCR 1N589 1N233A 2N3304 1N20461
2000 - FE16B

Abstract: MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402
Text: TG288 TG4 TG6 TG84 TG86 UES1001 UES1002 UES1003 UES1101 UES1102 UES1103 UES1104 UES1105 UES1106 UES1301


Original
PDF r14525 CRD801/D FE16B MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402
BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2N3304 bf256 2n5910 2n5248
Text: No file text available


Original
PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2N3304 bf256 2n5910 2n5248
MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent BYV19-45 MUR1620CT equivalent MUR1660CT equivalent MUR1520 equivalent
Text: STTA106U STTA206S TG26 TG284 TG286 TG288 TG4 TG6 TG84 TG86 UES1001 UES1002 UES1003 UES1101 UES1102 UES1103


Original
PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent BYV19-45 MUR1620CT equivalent MUR1660CT equivalent MUR1520 equivalent
EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 FR207 equivalent 1N6644
Text: No file text available


Original
PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 FR207 equivalent 1N6644
2000 - mr852

Abstract: BA 5904 A F P DIODE MUR410 MUR460 BL RS1G footprint wave soldering mur1650 BYV1945 TRANSISTOR 534 MBRD360 FE8F
Text: No file text available


Original
PDF MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 BA 5904 A F P DIODE MUR410 MUR460 BL RS1G footprint wave soldering mur1650 BYV1945 TRANSISTOR 534 MBRD360 FE8F
2000 - A14F diode

Abstract: DIODE marking ES2D V352 UES1404 1N2069 357D-01 0010C SR1002 rg3j 005 MBRD360
Text: No file text available


Original
PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 UES1404 1N2069 357D-01 0010C SR1002 rg3j 005 MBRD360
Supplyframe Tracking Pixel