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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor a1488 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - stk403-090

Abstract: stk*403-090 STK403-100 Transistor a1488 stk*403-100 stk403 100 STK433-260 stk433-070 stk403 090 STK433-060
Text: Ordering number : EN* A1488 Thick-Film Hybrid IC STK433-070-E Overview 2-channel class AB , equipment. O2109HKIM No. A1488 -1/11 STK433-070-E Specifications Absolute Maximum Ratings at Ta = 25 , Tstg ts VCC=±29V, RL=6, f=50Hz, PO=40W, 1-channel active Per power transistor Both the Tj max and Tc , No. A1488 -2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 41.2 (R1.8) 9.0 12.8 , 9 5 4 6 7 13 No. A1488 -3/11 STK433-070-E Application Circuit Example STK433-070-E -PRE


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PDF A1488 STK433-070-E STK433-070-E STK433-100 STK433-200/-300 STK433-030-E /20se. A1488-11/11 stk403-090 stk*403-090 STK403-100 Transistor a1488 stk*403-100 stk403 100 STK433-260 stk433-070 stk403 090 STK433-060
2009 - stk403-090

Abstract: stk*403-090 STK403-100 stk*433-060 stk*433-070 Transistor a1488 STK-403-090 STK433-070 stk*403-100 stk*433-320
Text: Ordering number : EN* A1488 Thick-Film Hybrid IC STK433-070-E 2-channel class AB audio , evaluate and test devices mounted in the customer' s products or equipment. O2109HKIM No. A1488 -1/11 , resistance j-c Per power transistor 3.5 °C/W Junction temperature Tj max Both the Tj max , No. A1488 -2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 9.0 (R1.8) 1 15 , 14 Bias Circuit 1 2 SUB 10 9 5 4 6 7 13 No. A1488 -3/11 STK433


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PDF A1488 STK433-070-E STK433-070-E STK433-100 50W/2ch STK433-200/-300 STK433-030-E STK433-040-E STK433-060-E A1488-11/11 stk403-090 stk*403-090 STK403-100 stk*433-060 stk*433-070 Transistor a1488 STK-403-090 STK433-070 stk*403-100 stk*433-320
2010 - A1488

Abstract: Transistor a1488 stk403-090
Text: Ordering number : EN* A1488 Thick-Film Hybrid IC STK433-070-E 2-channel class AB audio , customer' s products or equipment. O2109HKIM No. A1488 -1/11 STK433-070-E Specifications Absolute , transistor 3.5 °C/W Junction temperature Tj max Both the Tj max and Tc max conditions must be , 10000μF No. A1488 -2/11 STK433-070-E Package Dimensions unit:mm (typ) 47.0 9.0 (R1.8) 1 , - 15 14 Bias Circuit 1 2 SUB 10 9 5 4 6 7 13 No. A1488 -3/11 STK433


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PDF A1488 STK433-070-E STK433-070-E STK433-100 STK433-200/-300 STK433-030-E STK43formation A1488-11/11 A1488 Transistor a1488 stk403-090
c5287

Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 c3852 transistor c3856 npn
Text: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .16 A1303.17 A1386/A .18 A1488 /A , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1488 B1257 C3179 C3851 D1796 50 C3834 C3835 C4153 A1186 B1560 B1588 C2837 D2390 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V


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PDF n66to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 c5287 c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 c3852 transistor c3856 npn
1996 - Not Available

Abstract: No abstract text available
Text: €“55 to +125°C –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power , €“152.2 –148.8 –150.3 –154.5 –159.8 –165.6 –172.5 –179.3 171.3 162.0 151.4 139.9


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1995 - Not Available

Abstract: No abstract text available
Text: dBm –55 to +125°C –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor , €“175.4 –171.7 –167.7 –164.4 –152.2 –148.8 –150.3 –154.5 –159.8 –165.6 â


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PDF 1000MHz 5963-2508E
2001 - Transistor a1488

Abstract: No abstract text available
Text: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’24.8 −46.4 −64.8 −81.8 −96.9 −109.5 −120.9 −131.4 −140.5 −148.8 −155.7 â , ˆ’80.1 −89.5 −98.9 −107.3 −115.3 −123.3 −130.5 −137.4 −143.3 −148.8 −154.0 â


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz , . (deg.) −24.8 −46.4 −64.8 −81.8 −96.9 −109.5 −120.9 −131.4 −140.5 −148.8 , ˆ’59.6 −70.2 −80.1 −89.5 −98.9 −107.3 −115.3 −123.3 −130.5 −137.4 −143.3 −148.8


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1998 - nec A1394

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , ˆ’126.3 −138.4 −148.8 −159.7 −171.2 −179.9 173.9 168.2 162.7 158.2 8.760 7.301 6.101


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1997 - nec a1010

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , €“73.3 –97.6 –114.1 –128.3 –139.5 –148.8 –158.0 –163.6 –170.5 –177.1 177.9


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2001 - Transistor a1244

Abstract: A827 1307 A1489 TRANSISTOR A1668
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number , ˆ’139.6 −143.4 −146.5 −148.8 0.285 0.493 0.663 0.790 0.885 0.955 1.007 1.051 1.083 , ˆ’129.2 −137.9 −148.8 1.144 1.076 1.039 5.99 4.40 3.00 18 Data Sheet P15287EJ1V0DS


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PDF 2SC5677 2SC5677-T3 Transistor a1244 A827 1307 A1489 TRANSISTOR A1668
2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0


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2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , ˆ’109.4 −127.4 −139.8 −148.8 −156.4 −162.3 −167.2 −171.4 −174.9 −178.4 179.1


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c4468 power transistor equivalent

Abstract: c5287 equivalent transistor c4381 power transistor equivalent SLA5096 c4131 equivalent transistor B1560 equivalent sla5212 transistor c5287 circuit diagram C4300 transistor pin out 2SC3852
Text: Specifications List by Part Number . 172 2-4 Transistor and MOS FET , A1488A C3851A D2014 60 C3852 A1488 B1257 C3851 D1796 50 A1694 A1908 C4467 C5100 , MT-200 (fixed at two points) MT-200 (fixed at two points) LAPT (Linear Amplified Power Transistor ): Multi-Emitter Transistor for High-Frequency ■Output Transistors with Temperature Compensating Function


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PDF SLA15Pin) c4468 power transistor equivalent c5287 equivalent transistor c4381 power transistor equivalent SLA5096 c4131 equivalent transistor B1560 equivalent sla5212 transistor c5287 circuit diagram C4300 transistor pin out 2SC3852
fgt313

Abstract: c5287 equivalent transistor B1560 equivalent 2sk2079 FGT412 c4381 SLA4052 c5287 C4381 equivalent c3852a
Text: Specifications List by Part Number . 168 2-4 Transistor and MOS FET Arrays , A1488 B1257 C3851 D1796 50 A1694 A1908 C4467 C5100 C4495 2 3 A1303 A1860 C3284


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2008 - 2SC5586 equivalent

Abstract: c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 C3852 c4381
Text: Specifications List by Part Number . 158 2-3 Transistor and MOS FET Arrays , C3852A A1488A C3851A D2014 60 C3852 A1262 A1488 B1257 C3179 C3851 D1796 C4024 A1568 B1351 , 2-3 Transistor and MOS FET Arrays Specifications List by Part Number Part Number SDA05 SDC03 SDC04 , (SMA12Pin) SIP12 (SMA12Pin) SIP12 (SMA12Pin) SIP15 (SMA15Pin) 160 Transistors 2-3 Transistor and


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PDF SLA21Pin) 2SC5586 equivalent c5287 equivalent transistor SLA4052 2SK3003 equivalent B1560 equivalent c4468 power transistor equivalent D2141 equivalent D2045 C3852 c4381
2001 - a1069 nec

Abstract: No abstract text available
Text: TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS , ˆ’135.8 −140.5 −145.0 −148.8 9.425 8.957 8.464 7.978 7.560 7.149 6.783 6.428 6.087 5.816


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2001 - transistor A1024

Abstract: A1712 nec a1232
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold package ORDERING


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PDF 2SC5761 2SC5761-T2 transistor A1024 A1712 nec a1232
2001 - C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 transistor c3856 npn SK C5071 C4020 TO220
Text: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .16 A1303.17 A1386/A .18 A1488 /A , .171 Discontinued Parts Guide .176 1 Transistor Selection Guide s VCEO-IC 800 , 100 80 C3852A C3852 A1694 A1908 C4467 C5100 A1262 A1488 B1257 C3179 C3851 D1796 , C3680 C4301 C5002 C5003 C4131 14 15 16 17 18 25 Transistor Selection Guide


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PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 transistor c3856 npn SK C5071 C4020 TO220
d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Text: reproduced in whole or in part without prior written approval from Sanken. Contents Transistor , .16 A1303.17 A1386/A .18 A1488 /A , Transistor Selection Guide s VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A , A1488 B1257 C3179 C3851 D1796 50 C3834 C3835 C4153 A1186 B1560 B1588 C2837 D2390 , 25 Transistor Selection Guide s Transistors for Switch Mode Power Supplies (for AC80 ­ 130V


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PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic SLA5096 RELAY sz - 2103 12V C5100 MOSFET
Text: No file text available


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PDF H1-O03EE0-1004015ND transistor BU 102S fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic SLA5096 RELAY sz - 2103 12V C5100 MOSFET
triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb60 bridge rectifier rb40 bridge rectifier ZD 607 - triac CTPG2F Toshiba transistor c4468 CTX12S STA524A
Text: . 144 2 Transistor 2-1 2-2 2-3 Transistor , . 160 Transistor and MOS FET Array


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PDF The32-246622 H1-O03EA0-0510020NM triac zd 607 transistor C5586 bridge rectifier sanken rb40 rb60 bridge rectifier rb40 bridge rectifier ZD 607 - triac CTPG2F Toshiba transistor c4468 CTX12S STA524A
SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA4052 SLA6102 SI 18751
Text: No file text available


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PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA4052 SLA6102 SI 18751
SSC9512

Abstract: B1560 equivalent STR-W6750 strw6053 DARLINGTON TRANSISTOR ARRAY 24v dc soft start motor control diagram sanken audio modules str3a100 STRW6252 inverter 12v to 220 ac mosfet based
Text: with an open-collector drive circuit of a transistor . When using both the soft-start and ON/OFF functions together, the discharge current from C3 flows into the ON/OFF control transistor . Therefore, limit the current securely to protect the transistor if C3 capacitance is large. The ON/OFF pin is , drive circuit of a transistor . When using both the soft-start and ON/OFF functions together, the discharge current from C3 flows into the ON/OFF control transistor . Therefore, limit the current securely


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PDF O03EH0 STR-X6768N TMA256B-L STR-X6769 TMB166S-L STR-X6769B TMB206S-L STR-Y6453 VR-60SS STR-Y6456 SSC9512 B1560 equivalent STR-W6750 strw6053 DARLINGTON TRANSISTOR ARRAY 24v dc soft start motor control diagram sanken audio modules str3a100 STRW6252 inverter 12v to 220 ac mosfet based
1999 - TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
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