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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor W2T 86 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR W2T

Abstract: Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector SP8853 242kci 7AF1
Text: reference source. In this mode, the source is simply AC-coupled into the oscillator transistor base on pin , provide a low impedance tap for the feedback signal to the transistor emitter. Typical values are shown in , forward biasing the transistor 's collector-base junction. Lock Detect and Charge Pump Operation In some , ) t3 = c2 /~?2 ti = t2 = cfr2 t3 = c2r3 Ti = t2 = khK0 1 «ni"! -tan 4>0 + 1+ W2T f Ll


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PDF SP8853A/B 13GHz DS2352 SP8853 64mm/0 418/ED/51186/001 10SEP99 GPD00602 TRANSISTOR W2T Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector 242kci 7AF1
TRANSISTOR W2T

Abstract: HP8757 LMX2215 LMX2216B w2t transistor
Text: of high gain transistors and can perform the mixing action using only one transistor . Among these , matching networks, then these will affect the noise performance as well. For each transistor operating at a , impedance at the input of the transistor yields the optimum noise perform ance. The noise figure of the , sinusoids: Vj = A (COS C tJi f + COS W2t ) Then, the output voltage is v 0 = k-| A (cos w it + cos a>2t) + k2


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PDF
Not Available

Abstract: No abstract text available
Text: (0) 1 69 86 34 34 CHK080A-SRA 80W Power Packaged Transistor Recommended DC Operating Ratings , : +33 (0) 1 69 86 34 34 CHK080A-SRA 80W Power Packaged Transistor RF Characteristics (Pulsed , : +33 (0) 1 69 86 34 34 CHK080A-SRA 80W Power Packaged Transistor Typical S-parameters The , 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK080A-SRA 80W Power Packaged Transistor Maximum Gain & , : +33 (0) 1 69 86 34 34 CHK080A-SRA 80W Power Packaged Transistor Recommended Assembly Procedure


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PDF CHK080A-SRA CHK080A-SRA 600mA, DSCHK080A-SRA3148
Not Available

Abstract: No abstract text available
Text: 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK040A-SOA 40W Power Packaged Transistor Typical , ) 1 69 86 34 34 CHK040A-SOA 40W Power Packaged Transistor Maximum Gain & Stability , : +33 (0) 1 69 86 34 34 CHK040A-SOA 40W Power Packaged Transistor Typical Performance on , .: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK040A-SOA 40W Power Packaged Transistor , : +33 (0) 1 69 86 34 34 CHK040A-SOA 40W Power Packaged Transistor Demonstration Amplifier Low


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PDF CHK040A-SOA CHK040A-SOA 300mA, DSCHK040ASOA3021
Not Available

Abstract: No abstract text available
Text: 86 34 34 CHK025A-SOA 25W Power Packaged Transistor Recommended DC Operating Ratings Tcase , 86 34 34 CHK025A-SOA 25W Power Packaged Transistor RF Characteristics (Pulsed) Tcase= +25° , : +33 (0) 1 69 86 34 34 CHK025A-SOA 25W Power Packaged Transistor Simulated Source and Load , 86 34 34 CHK025A-SOA 25W Power Packaged Transistor Typical Performance on Demonstration , 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK025A-SOA 25W Power Packaged Transistor Typical


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PDF CHK025A-SOA CHK025A-SOA 200mA, DSCHK025ASOA3021
Not Available

Abstract: No abstract text available
Text: ) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK015A-SMA 15W Power Packaged Transistor , ) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK015A-SMA 15W Power Packaged Transistor Maximum , .: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK015A-SMA 15W Power Packaged Transistor , .: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK015A-SMA 15W Power Packaged Transistor , .: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHK015A-SMA 15W Power Packaged Transistor


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PDF CHK015A-SMA CHK015A-SMA 100mA, DSCHK015ASMA3021
2000 - TDA 16846 P

Abstract: tda 2750 tda 4605 application note TDA 1031 K2k transistor transistor Siemens 14 S S 92 IC tda 16846 TDA 1060 f TDA4605 Siemens LOGO 24
Text: /47: 8 V). So also the gate voltage of the MOS FET reaches a minimum. The CoolMOSTM transistor can , the transistor rises and the drain current is limited. During this time the power dissipation in the transistor is very high and this means a danger for the transistor and a handicap for the startup. No shunt , CoolMOSTM transistor with lower Rdson and higher drain current has to be used. A higher value of the , transistor gets a higher gate voltage. But also the charging time for the supply capacitor becomes longer


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PDF 16846x PostScript-Druc90 Room14J1 Room1101 TDA 16846 P tda 2750 tda 4605 application note TDA 1031 K2k transistor transistor Siemens 14 S S 92 IC tda 16846 TDA 1060 f TDA4605 Siemens LOGO 24
2000 - two transistor forward

Abstract: siemens RC snubber smps transformer Design half bridge smps transformer design PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES full bridge smps basic 24 volt output smps design Single phase half wave bridge converter AN-CoolMOS-02 resonant single ended forward converter
Text: ) .4 1.3 Single Transistor Forward Converter , .6 1.5 Two Transistor Forward Converter , Transistor Half-Bridge Converter -Symmetrical PWM -Symmetrical resonant -Asymmetrical (2 Transistor , , 600V 500V, 600V Table 1: SMPS Topologies & Transistor Selection 1.1 Flyback Converter The , turning on the power transistor . When the transistor turns off, the inductor reset on the secondary side


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PDF AN-CoolMOS-08 Room14J1 Room1101 two transistor forward siemens RC snubber smps transformer Design half bridge smps transformer design PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES full bridge smps basic 24 volt output smps design Single phase half wave bridge converter AN-CoolMOS-02 resonant single ended forward converter
2003 - transistor sockets

Abstract: 3pin transistor through mil-m-14, transistor pin socket 2211 9 PIN PC MOUNT TUBE SOCKET BE WALDES TRUARC
Text: Sockets SERIES 22 TRANSISTOR SOCKET FEATURES · Sockets for JETEC Transistors and Similar , transistor tab is molded into top. .40 (10,16) DIA. 1 .28 (7,11) 3 2 4 1 Transistor Sockets Bi-Pin Lamp Sockets Transistor Sockets .11 (2,79) Transistor Sockets 22-11 .57 (14,48) MTG. CENTER , . CIRCLE OF CENTERS .27 (6, 86 ) DIA. PIN HOLE (2) .020 (0,51) DIA. Bi-Pin Lamp Sockets 22-250 .260 (6 , ,64) Termination Hardware .034 (0, 86 ) Trim Lamp leads to .215 (5,46) length. .27 (6, 86


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MICRO SWITCH FREEPORT. ILL. U.S.A

Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r MAR 637 vx13-b1 lt 637 vx11-b1 honeywell hall sensor vx81 VX80-A3
Text: TO +28 VOLTS DC VOLTAGE EXTERNALLY APPLIED TO OUTPUT 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY /ÏYë\ -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN ON OR OFF CONDITION AYB\ LOAD ON OUTPUT 20mA , MAX REMARKS SUPPLY CURRENT /2\ 5mA 15mA OUTPUT TRANSISTOR OFF /6\ OUTPUT VOLTAGE /1Y3\ (OUTPUT TRANSISTOR ON) /5\/6\ 0.15V 0.4V SINKING 10mA MAX OUTPUT LEAKAGE /1Y3\ CURRENT (OUTPUT * A TRANSISTOR OFF , UNACTUATED OUTPUT VOLTAGE AND OUTPUT TRANSISTOR STATE AT 24°C ± 2°C AND SUPPLY VOLTAGE OE 4.5 TO 24 VOLTS


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PDF CO79902 PR22156 C08374-1 C093789 R23775 PR237B7 PR23760 C093843 C095107 CO-95704 MICRO SWITCH FREEPORT. ILL. U.S.A VX81 TRANSISTOR JA5 honeywell m 944 r MAR 637 vx13-b1 lt 637 vx11-b1 honeywell hall sensor vx81 VX80-A3
2006 - A 122 transistor

Abstract: No abstract text available
Text: SK 115 MD 10 MOSFET, TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5 , # $# A:! 0# 5AA( K 0> 5AA( K (1 #E(5 'N @ (#>E 5> + -2 86 03# + 2 06 + -2 . F , 0##6 : + /- . 03# + 4 /20 60# + 2 0 5 + ,2 86 03# + 12 06 : + /- . 5 + ,2 86 03# + 12 06 (#>E , ) % % &'# ( ' ) ) + ,-. I?J 0 8 B 0 8 B Inverse diode : F 5> + -2 86 %: + /- .6 A3 + -7 D 0A + 7- 86 ? + 122 8?B 5> + 86 03# + 0 F 5> + 86 %: + . 0 + 86 ? + 8


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PDF 115MD10 A 122 transistor
2008 - Not Available

Abstract: No abstract text available
Text: SK 85 MH 10 MOSFET, TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5 , # $# A:! 0# 5AA( K 0> 5AA( K (1 (#>E 5> + -2 86 03# + 2 06 + . F 0 + -2 06 03 , # + 4 /20 60# + 2 0 5 + ,2 86 03# + 12 06 : + /- . 5 + ,2 86 03# + 12 06 (#>E F 03# + 2 06 0 , B 0 8 B Inverse diode : F 5> + -2 86 %: + /- .6 A3 + -7 D 0A + 7- 86 ? + 122 8?B 5> + 86 03# + 0 F 5> + 86 %: + . 0 + 86 ? + 8?B L Free-wheeling diode Mechanical data


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2006 - Not Available

Abstract: No abstract text available
Text: SK 85 MH 10 MOSFET, TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5 , # $# A:! 0# 5AA( K 0> 5AA( K (1 (#>E 5> + -2 86 03# + 2 06 + . F 0 + -2 06 03 , # + 4 /20 60# + 2 0 5 + ,2 86 03# + 12 06 : + /- . 5 + ,2 86 03# + 12 06 (#>E F 03# + 2 06 0 , B 0 8 B Inverse diode : F 5> + -2 86 %: + /- .6 A3 + -7 D 0A + 7- 86 ? + 122 8?B 5> + 86 03# + 0 F 5> + 86 %: + . 0 + 86 ? + 8?B L Free-wheeling diode Mechanical data


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PDF 85MH10
transistor BUX 44

Abstract: transistor BUX BUX87 bux86 transistor BF 414
Text: A TELEFUNKEN ELECTRONIC TTIUIFy MKIM electronic Creative Tfechnotog* * 17E D BUX 86 - , resistance Junction case r.,s flthJC P.O. ^ CEO ^CES ^EBO ^ c ^ C M BUX 86 400 850 5 0.5 1.0 0.3 0.3 20 150 - , 213 TELEFUNKEN ELECTRONIC 17E D filSDCnb O D G W f l R AL66 BUX 86 * BUX 87 , °C, = 80 0 V VCE*= 1000 V BUX 86 BUX 87 BUX 86 BUX 87 ^ C ES ^ C ES ^ C ES kiS V(BR)CEO1 1 V(BR)CEO'I 1 , mA mA Collector-emitter breakdown voltage /c = 1 00m A ,lc =125mH BUX 86 BUX 87 Emitter-base


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PDF 15A3DI transistor BUX 44 transistor BUX BUX87 bux86 transistor BF 414
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
Text: on topology and switching transistor * supply from independent voltage source 6 PWM + CCM PFC , Transistor Forward Converter Single-ended Forward Converter Boost Converter T1 D1 LOUT VIN , , ICE3DS01 CIN Q1 D2S Q1 COUT VOUT D1P Disadvantages Power transistor drain-source , Advantages Demagnetizing the core is no problem Simple circuitry Disadvantages Power transistor , level of stray inductance Disadvantages Power transistor drain-source voltage VDS = VIN + Nx (VOUT


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
2000 - B81121 X2 mkt

Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor B81121 X2 TDA 16888
Text: Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon , g TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz 150W Output: 5V/18A , Transistor Forward Converter 150W / 100kHz Circuit description Multioutput single transistor forward , AN-TDA16888-0-010323 V1.1 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz This , capacitor C13 connected to this pin, even when there is no transistor current (slope compensation). This


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PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor B81121 X2 TDA 16888
ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise B12V105 ic 4027 information microwave transistor SOT-23J
Text: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low , Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS , 106 102 88 82 86 84 78 78 73 70 69 63 64 58 0.0316 0.0478 0.0660 0.0776 0.0876 , 15.4 13.3 12.1 10.6 10.3 10.0 10.2 9.6 8.9 8.7 8.6 7.3 7.1 6.8 5.8 5.5 4.8 4.7 3.9


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PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise ic 4027 information microwave transistor SOT-23J
Avantek amplifier 8 12 GHz

Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
Text: -42000 Medium Power Silicon Bipolar Transistor Ta = S 12 Ang 155 108 90 86 82 74 68 61 57 51 41 36 32 dB -37.7 , Medium Power Transistor Silicon Bipolar Transiste Chip Features · High Output Power: 21.0 dBm typical , -42000 is a high performance NPN silicon bipolar transistor chip designed for use in medium power, wide band , -42000 Medium Power Silicon Bipolar Transistor Absolute Maximum Ratings Param eter Emitter-Base Voltage , .050 .058 .068 .081 .092 .109 .138 .154 Ta = Ang 71 43 47 52 57 66 72 77 82 86 87 88 87 Mag .92 .57


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PDF AT-42000 Avantek amplifier 8 12 GHz Avantek power amplifier AT-42000-GP4 AVANTEK transistor
BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS's CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor . It offers a general purpose , Transistor July 2011 Recommended DC Operating Ratings Tcase= +25°C Symbol Parameter VDS Drain to , change without notice AI1010 15W Power Packaged Transistor July 2011 Absolute Maximum , in the reference plane defined by the connection between the transistor lead and the PCB. A gap of


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PDF AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
2000 - irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 siemens rectifier pwm igbt AN-CoolMOS-02
Text: ) .17 6.3 Single Transistor Forward Converter , .19 6.5 Two Transistor Forward Converter , ) .25 7.3 Single Transistor Forward 7.4 Two Transistor Forward Converter , possible to reduce the on-state resistance RDS(on) of a 600V transistor by factor of 5 for the same


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PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 siemens rectifier pwm igbt AN-CoolMOS-02
2009 - transistor model list

Abstract: omron counter H7CX-R11D1-N H7CX-AU-N H7CX-A11S-N preset contact counter M079-E1 Digital Pulse Counter - Two Digit H7CX-R11 Y92S-29
Text: digits Transistor output (SPST) Contact output (SPDT) 11-pin socket Contact output (SPDT) 6 digits Transistor output (SPST) Contact output (SPDT) Transistor output (SPST) · 1-stage preset , Transistor output (SPST) Contact output (SPDT) Transistor output (SPST) Contact output (SPDT) 6 digits Transistor output (SPST) Contact output (SPDT) Transistor output (SPST) H7CX-A Series · 1 , H7CX-A4W-N Transistor output (DPST) 12 to 24 VDC H7CX-A4WSD-N 4 digits Screw terminals


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PDF 11-pin 6835-3011/Fax: 21-5037-2222/Fax: M081-E1-01 transistor model list omron counter H7CX-R11D1-N H7CX-AU-N H7CX-A11S-N preset contact counter M079-E1 Digital Pulse Counter - Two Digit H7CX-R11 Y92S-29
MAX713 equivalent

Abstract: 15V-to-40V MAX713 OP AMP 5A OUTPUT MAX726 pnp transistor switching regulator AN86 PWM SWITCH MODE npn switching transistor Ic 5A
Text: , 1998 APPLICATION NOTE 86 Switch-Mode Battery Charger Delivers 5A The fast-charge controller IC3 (Figure 1) normally directs current to the battery via an external pnp transistor . In this circuit, the transistor is replaced with a 5A switching regulator (IC1) that delivers equivalent power with higher , regulator whose output is configured as a current source. Its internal power switch (an npn transistor ) is , 2msec to 5mV times N (where N is the number of battery cells). Application Note 86 : http


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PDF com/an86 MAX713: APP86, Appnote86, MAX713 equivalent 15V-to-40V MAX713 OP AMP 5A OUTPUT MAX726 pnp transistor switching regulator AN86 PWM SWITCH MODE npn switching transistor Ic 5A
H9601

Abstract: marking 4FB h431 transistor Transistor C G 774 6-1 H431 3.gnd dip-8 IC200916
Text: bipolar power transistor for switching, achieves start-up uses its magnification function as well, which , GND FB 5 VCC 6 OE Emitter of power transistor ; Start-up current input 7 OC Collector of power transistor 8 OC Collector of power transistor Built-in test pin VR 2.5V reference voltage Built-in test pin 1 Base of power transistor ; Start-up current control 4 8 OB 3 H960 1 IS Current of power transistor Ground Feedback input Power supply


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PDF IC200916 H9601 marking 4FB h431 transistor Transistor C G 774 6-1 H431 3.gnd dip-8 IC200916
transistor 86 y 87

Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
Text: « Thai HEWLETT minM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip , transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium , 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is


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PDF AT-42000 AT-42000 KM/50 44475aii ooi7b53 0017b54 transistor 86 y 87 eic 57 210 17bs2 AT-42000-GP4 pj 68 S2a
2009 - TRANSISTOR A114

Abstract: transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX H7CX-R11 L111-E1 diode a4W
Text: H7CX-A114-N 100 to 240 VAC 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket , Tachometer H7CX-A11-N 100 to 240 VAC Transistor output (SPST) H7CX-A11S-N Contact output (SPDT) H7CX-A11D1-N 6 digits 12 to 24 VDC/24 VAC Transistor output (SPST) · 1-stage preset counter · Total , Transistor output (SPST) H7CX-A4S-N 4 digits Contact output (SPDT) H7CX-£-N H7CX-A4D-N 12 to 24 VDC Preset counter Transistor output (SPST) H7CX-A4SD-N Contact output (SPDT) The


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PDF H7CX-A114-N 11-pin H7CX-A114S-N VDC/24 H7CX-A114D1-N H7CX-A11-N H7CX-A11S-N H7CX-A11D1-N H7CX-A11SD1-N TRANSISTOR A114 transistor model list industrial application of DIGITAL TACHOMETER omron h7cx digital tachometer H7CX-AU-N Counter Omron H7CX H7CX-R11 L111-E1 diode a4W
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