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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor W2T 58 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR W2T

Abstract: Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector SP8853 242kci 7AF1
Text: reference source. In this mode, the source is simply AC-coupled into the oscillator transistor base on pin , provide a low impedance tap for the feedback signal to the transistor emitter. Typical values are shown in , forward biasing the transistor 's collector-base junction. Lock Detect and Charge Pump Operation In some , ) t3 = c2 /~?2 ti = t2 = cfr2 t3 = c2r3 Ti = t2 = khK0 1 «ni"! -tan 4>0 + 1+ W2T f Ll , 1.500 e 2.54 BSC. 0.100 BSC. b1 1.14 1.65 0.045 0.065 b 0.36 D. 58 0.014 0.023 b2 0.73


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PDF SP8853A/B 13GHz DS2352 SP8853 64mm/0 418/ED/51186/001 10SEP99 GPD00602 TRANSISTOR W2T Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector 242kci 7AF1
TRANSISTOR W2T

Abstract: HP8757 LMX2215 LMX2216B w2t transistor
Text: of high gain transistors and can perform the mixing action using only one transistor . Among these , matching networks, then these will affect the noise performance as well. For each transistor operating at a , impedance at the input of the transistor yields the optimum noise perform ance. The noise figure of the , sinusoids: Vj = A (COS C tJi f + COS W2t ) Then, the output voltage is v 0 = k-| A (cos w it + cos a>2t) + k2


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2009 - PBSS302NZ

Abstract: PBSS302PZ SC-73
Text: PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 - 20 November 2009 Product , NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2 , Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , PBSS302NZ NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa562 102 =1 , Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics


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PDF PBSS302NZ OT223 SC-73) PBSS302PZ. PBSS302NZ PBSS302PZ SC-73
2006 - S301NZ

Abstract: PBSS301NZ PBSS301PZ SC-73
Text: PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 01 - 7 September 2006 Product , V, 5.8 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In , Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal , V, 5.8 A NPN low VCEsat (BISS) transistor 102 006aaa562 =1 0.75 Zth(j-a) (K/W) 0.50 , PBSS301NZ Philips Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa566 1


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PDF PBSS301NZ OT223 SC-73) PBSS301PZ. PBSS301NZ S301NZ PBSS301PZ SC-73
2006 - PBSS302NZ

Abstract: PBSS302PZ SC-73
Text: PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 01 - 8 September 2006 Product , V, 5.8 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In , Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal , V, 5.8 A NPN low VCEsat (BISS) transistor 102 006aaa562 =1 0.75 Zth(j-a) (K/W) 0.50 , PBSS302NZ Philips Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa574 1


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PDF PBSS302NZ OT223 SC-73) PBSS302PZ. PBSS302NZ PBSS302PZ SC-73
2009 - PBSS301NZ

Abstract: PBSS301PZ SC-73 PBSS301
Text: PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 - 17 November 2009 Product , NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2 , Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , PBSS301NZ NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa562 102 =1 , Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics


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PDF PBSS301NZ OT223 SC-73) PBSS301PZ. PBSS301NZ PBSS301PZ SC-73 PBSS301
2009 - Not Available

Abstract: No abstract text available
Text: PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product , PBSS302NZ NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa562 102 Π, NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7 , 7 of 14 PBSS302NZ NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor , NXP Semiconductors 20 V, 5.8 A NPN low VCEsat (BISS) transistor 8. Test information IB input


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PDF PBSS302NZ OT223 SC-73) PBSS302PZ. PBSS302NZ
2009 - Not Available

Abstract: No abstract text available
Text: PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 — 17 November 2009 Product , PBSS301NZ NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 006aaa562 102 Π, NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7 , November 2009 7 of 14 PBSS301NZ NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor , NXP Semiconductors 12 V, 5.8 A NPN low VCEsat (BISS) transistor 8. Test information IB input


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PDF PBSS301NZ OT223 SC-73) PBSS301PZ. PBSS301NZ
XC6383

Abstract: MA735 XC6381 XC6381A XC6381C XC6381E 155KHz
Text: % SOT-23, SOT-89-3 Built-in Transistor "Lx" lead XC6381B 58 % SOT-23, SOT-89-3 External Transistor "EXT" lead XC6381C 58 % SOT-25, SOT-89-5 Built-in Transistor "Lx" lead Chip Enable(CE) XC6381D 58 % SOT-25, SOT-89-5 External Transistor "EXT" lead Chip Enable(CE) XC6381E 58 % SOT-25, SOT-89-5 Built-in Transistor "Lx" lead · Independent power supply and , . XC6381F 224 DUTY RATIO 58 % SOT-25, SOT-89-5 External Transistor "EXT" lead ·


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PDF XC6381 155kHz CD105) XC6383B501 XC6383 MA735 XC6381A XC6381C XC6381E 155KHz
2010 - Cordless Phone circuit diagram

Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR S parameters of 5.8 GHz transistor RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
Text: : bipolar transistor 8 / 15 2010-09-24 BFP750 BFP750 5.8 GHz Driver Amplifier Typical Measurement , BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons , other persons may be endangered. BFP750 BFP750 5.8 GHz Driver Amplifier Application Note AN246 , Application Note AN246, Rev1.1 3 / 15 2010-09-24 BFP750 BFP750 5.8 GHz Driver Amplifier List of , .7 Schematic diagram of the BFP750 driver application circuit for 5.8 GHz


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PDF limitation111 5000MHz BFP750 AN246, BFP750 AN246 Cordless Phone circuit diagram 2.4GHz Cordless Phone circuit diagram cordless phone circuit SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR S parameters of 5.8 GHz transistor RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
1998 - HOA1397-002

Abstract: sensor transistor HOA1397 HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
Text: Datasheet - HOA1397-002 HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic , isopropanol. HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Product Specifications Product Type IR Switch On-State Collector Current 0.70 mA Output Transistor , |/ (1 of 4)13/03/2005 02: 58 :25 ã , of Response 1,27 mm [0.05 in] HOA1397-002 HOA Series Reflective Sensor, Transistor Output


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PDF HOA1397-002 HOA1397 HOA1397-001, HOA1397-031, 20and 20Settings/rabab/Desktop/Datasheet 20HOA1397-002 HOA1397-002 sensor transistor HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
2006 - PBSS5540Z

Abstract: SC-73 PBSS8110Z PBSS4540Z PBSS4350Z PBSS306NZ PBSS305NZ PBSS304NZ PBSS303NZ PBSS302NZ
Text: voltage than previous low VCEsat transistor generations. Collector current has been increased up to 5.8 , transistor types. Our latest range of 3rd generation BISS (Breakthrough In Small-Signal) transistors , capabilities up to 5.8 A continuous and 11.6 A peak } High current gain hFE } Package size SOT223 (SC , General purpose transistor Tcase = 110°C 3rd generation BISS transistor Tcase = 40°C Temperature profile of device surface (Tcase). Comparison of a general purpose transistor and a 3rd generation BISS


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PDF OT223 SC-73) PBSS306PZ PBSS5540Z SC-73 PBSS8110Z PBSS4540Z PBSS4350Z PBSS306NZ PBSS305NZ PBSS304NZ PBSS303NZ PBSS302NZ
2011 - BFU610F

Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610
Text: Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 1.7 dB at 5.8 GHz High associated gain 13.5 dB at 5.8 GHz 40 GHz fT silicon technology 1.3 Applications Low current , BFU610F NPN wideband silicon RF transistor Rev. 2 - 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise , BFU610F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1


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PDF BFU610F OT343F JESD625-A BFU610F bfu6 NXP Bluetooth IC BFU610
2002 - 2N3906 MOTOROLA

Abstract: MC5207 Yageo zor 2n3906 equivalent transistor CFR-25JB-100R 2N3906 Equivalent BC ZOR-25-B datasheet connector DB25m transistor 2S D 716 db25m pinout
Text: is designed to support rapid prototyping of circuits employing the MIC284. A MMBT3906 transistor , diode or transistor in place of the on-board remote transistor . User configurable jumpers select the , pin. This PN junction is generally either a diode-connected bipolar junction transistor or the embedded thermal diode inside an integrated circuit. A diodeconnected 2N3906-type transistor , Q2, is , shielded twisted-pair (STP). If using a transistor , the base and collector should be shorted together at


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PDF MIC284 100mA MIC284 MIC284. MMBT3906 2N3906) 2N3906 MOTOROLA MC5207 Yageo zor 2n3906 equivalent transistor CFR-25JB-100R 2N3906 Equivalent BC ZOR-25-B datasheet connector DB25m transistor 2S D 716 db25m pinout
2009 - ultra low noise RF Transistor

Abstract: BFR740F BFP740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
Text: 's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low 1 Infineon's BFP740F Ultra Low Noise RF Transistor in 2.33 GHz SDARS Low Noise Amplifier Application Applications · LNA stage for Satellite , Transistor in TSFP-4 package is shown in a +3.0 V 2.33 GHz LNA application. Amplifier draws 8.9 mA. +5 V power supply can be used if bias resistor values are changed. Transistor package size is 1.4 x 1.2 x , - - 2332 10.8 18.8 24.8 10.4 0.65 +9.7 +28.5 -12.0 + 5.8 2345


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PDF BFP740F ultra low noise RF Transistor BFR740F sdars application note no. 122 infineon b 58 468 11 A 122 transistor Low Noise R.F amplifier TRANSISTOR 12 GHZ sdars lna
2010 - BFU725F

Abstract: germanium transistors NPN ka-band mixer DRO lnb germanium npn Germanium diode data sheet nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 - 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , equivalent standards. 1.2 Features Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 , 's BFU725F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data


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PDF BFU725F OT343F JESD625-A BFU725F germanium transistors NPN ka-band mixer DRO lnb germanium npn Germanium diode data sheet nxp power microwave transistor RF Transistor reference Germanium power
2002 - sot-89 marking E5

Abstract: transistor 58 MARKING 93 SOT-89 marking 93, sot-89 E5 SOT89 dd sot89 XC6381E XC6381C XC6381A XC6381
Text: ADDITIONAL FUNCTION XC6381A 58 % SOT-23, SOT-89 Built-in Transistor "Lx" lead ­ XC6381C 58 % SOT-25, SOT-89-5 Built-in Transistor "Lx" lead Chip enable(CE) XC6381E 58 % SOT-25, SOT-89-5 Built-in Transistor "Lx" lead FEATURES · Accommodates a duty ratio of 58 , 58 % A C Stand-by capability. (5-pin) Built-in switching transistor E q 3 , Series PFM Controlled, StepUp DC/DC Converters (Duty Ratio 58 %) NDuty 58 % Applications


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PDF XC6381 155kHz 47FTantalum XC6381A301 sot-89 marking E5 transistor 58 MARKING 93 SOT-89 marking 93, sot-89 E5 SOT89 dd sot89 XC6381E XC6381C XC6381A
RQG2003

Abstract: SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
Text: Renesas Technology Releases SiGe Power Transistor Achieving Industry's Highest Performance Level , in Japan. As the successor of Renesas Technology's current HSG2002, the RQG2003 is a transistor for , %, at 5.8 GHz (b) 2.4 GHz band: Power gain of 13.0 dB, 1dB gain compression power of 26.5 dBm, and , , improved by approximately 10% at 5.8 GHz and approximately 20% at 2.4 GHz. This performance enables low , low transmission power, for example, is the use of a transistor instead of a module or MMIC* 4 for


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PDF RQG2003 HSG2002, tranRQG2003 WQFN0202 SiGe POWER TRANSISTOR WQFN0202 RF Radio frequency IC, 8pin 2.4 ghZ rf transistor RF output cordless phone transistor 2.4 ghz RF TRANSISTOR 2.4 GHZ SiGe RF TRANSISTOR
regulator input 220V AC output 3,3V DC

Abstract: 220v ac to 5v dc converter 230V ac to 110V dc converter circuit PWM 220v ac 220v ac to 5v dc converter circuit 30 pulse ac dc converter Ac - Dc converter ic DC to 220V AC converter ac PWM 220v converter from 110v to 220v
Text: duty ratio ( 58 % duty) (1) High efficiency at light load (2) High current cannot be pulled in 75% duty should be chosen if the application needs high current 58 % duty should be chosen if efficiency , differing the duty ratio but using the same coil (XC6381A501MR, Duty= 58 %, L=100µH) (XC6382A501MR, Duty , ) Output Voltage VOUT (V) 5.2 Duty = 58 % 4.8 Duty = 58 % 80 Duty = 75% 60 40 0.1 1 , (mA) " Fluctuation of efficiency when alternating external transistor from a bipolar transistor to


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PDF 10V/220V, regulator input 220V AC output 3,3V DC 220v ac to 5v dc converter 230V ac to 110V dc converter circuit PWM 220v ac 220v ac to 5v dc converter circuit 30 pulse ac dc converter Ac - Dc converter ic DC to 220V AC converter ac PWM 220v converter from 110v to 220v
2007 - BFU725F

Abstract: code marking s20 TRANSISTOR JESD625-A germanium rf transistor LNB ka band germanium transistor npn SOT343F germanium transistors NPN germanium transistor Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 - 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , equivalent standards. 1.2 Features I I I I Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium , silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol


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PDF BFU725F OT343F JESD625-A BFU725F code marking s20 TRANSISTOR germanium rf transistor LNB ka band germanium transistor npn SOT343F germanium transistors NPN germanium transistor Germanium power
2009 - transistor marking N1

Abstract: BFU725F LNB ka band JESD625-a 160 germanium transistor ka-band mixer nxp power microwave transistor nxp DC to microwave ka band lna Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 - 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for , equivalent standards. 1.2 Features I I I I Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium , NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data


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PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer nxp power microwave transistor nxp DC to microwave ka band lna Germanium power
1996 - philips tv flyback transformer data pin

Abstract: crt eht coil philips crt monitor EHT transformer eht transformer free circuit diagram of Crt Monitor flyback transformer philips TV flyback transformer philips TV 29 eht transformer pin diagram h.out transistor
Text: Geometry 1) Trapezium correction 2) Phase bending on top corner TDA4851/52 TDA4855/ 58 page 8, page 8, Horizontal 1) Extend H-autosync range 2) Extend H-pos control range 3) H-out transistor damage TDA4855/ 58 TDA4855/ 58 page 9, item 3.3. page 10, item 3.4. page 10, item 3.5. Vertical , ) Connection with defl. controller TDA4855/ 58 TDA4855/ 58 TDA4866 TDA4866 TDA4855/ 58 TDA4855/ 58 TDA8351 , crosstalk 5) Vertical booster 6) Waterfall noise 7) SMPS 8) Diamontron tube Others TDA4855/ 58


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PDF AN96129 TDA4851/4852/4855/4858/4866/4885/8351) AN95086 AN95086 AN95087 TDA4855 TDA4858 TDA4855 philips tv flyback transformer data pin crt eht coil philips crt monitor EHT transformer eht transformer free circuit diagram of Crt Monitor flyback transformer philips TV flyback transformer philips TV 29 eht transformer pin diagram h.out transistor
transistor

Abstract: Transistor Switch Mode Power Supply sot-25 step-up sot-23 XC6381E XC6381C XC6381A XC6381 Transistor switch SS TRANSISTOR
Text: XC6381 SeriesPFM Controlled, Step-up DC/DC Converters (Duty Ratio 58 %) General Description , . oscillator frequency is trimmed to 155kHz (accuracy : ±15%). Every built-in-in switching transistor type , capacitor. External transistor versions are available to accommodate high output current applications. Both built-in and external transistor types include 5-pin and 3-pin packages, which are provided with , accurate: Set-up voltage ±2.5% Maximum oscillator frequency: 155kHz (±15%) Duty Ratio: 58 % (±5%) Both


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PDF XC6381 155kHz XC6381E XC6381F XC6381 XC6381series OT-23 transistor Transistor Switch Mode Power Supply sot-25 step-up sot-23 XC6381E XC6381C XC6381A Transistor switch SS TRANSISTOR
2005 - S-8355Q45MC-OXET2G

Abstract: No abstract text available
Text: transistor connection pin 1 2 Figure 6 3 4 5 Table 16 S-8357/ 58 Series B, H, F and N Types , CONTROLLER Rev.6.5_00 S-8355/56/57/ 58 Series External parts Coil: Diode: Capacitor: Transistor : Base , REGULATOR CONTROLLER S-8355/56/57/ 58 Series The S-8355/56/57/ 58 Series is a CMOS step-up switching , control circuit (S-8356/ 58 Series). With an external low-ON-resistance Nch Power MOS, this product is , kHz models), an excellently designed error amplifier and a phase compensation circuits. S-8356/ 58


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PDF S-8355/56/57/58 S-8355/57 S-8356/58 S-8355Q45MC-OXET2G
2005 - Not Available

Abstract: No abstract text available
Text: transistor connection pin 1 2 Figure 6 3 4 5 Table 16 S-8357/ 58 Series B, H, F and N Types , REGULATOR CONTROLLER S-8355/56/57/ 58 Series The S-8355/56/57/ 58 Series is a CMOS step-up switching , control circuit (S-8356/ 58 Series). With an external low-ON-resistance Nch Power MOS, this product is , kHz models), an excellently designed error amplifier and a phase compensation circuits. S-8356/ 58 , ratio : Built-in PWM/PFM switching control circuit (S-8356/ 58 Series) 15 to 83% (100 kHz models) 15 to


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PDF S-8355/56/57/58 S-8355/57 S-8356/58
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