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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor W2T 06 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR W2T

Abstract: Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector SP8853 242kci 7AF1
Text: reference source. In this mode, the source is simply AC-coupled into the oscillator transistor base on pin , provide a low impedance tap for the feedback signal to the transistor emitter. Typical values are shown in , forward biasing the transistor 's collector-base junction. Lock Detect and Charge Pump Operation In some , ) t3 = c2 /~?2 ti = t2 = cfr2 t3 = c2r3 Ti = t2 = khK0 1 «ni"! -tan 4>0 + 1+ W2T f Ll


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PDF SP8853A/B 13GHz DS2352 SP8853 64mm/0 418/ED/51186/001 10SEP99 GPD00602 TRANSISTOR W2T Transistor W2T 58 phase detector 3GHz discrete phase sequence detector phase detector 242kci 7AF1
TRANSISTOR W2T

Abstract: HP8757 LMX2215 LMX2216B w2t transistor
Text: of high gain transistors and can perform the mixing action using only one transistor . Among these , matching networks, then these will affect the noise performance as well. For each transistor operating at a , impedance at the input of the transistor yields the optimum noise perform ance. The noise figure of the , sinusoids: Vj = A (COS C tJi f + COS W2t ) Then, the output voltage is v 0 = k-| A (cos w it + cos a>2t) + k2


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1998 - TRANSISTOR W2T

Abstract: Transistor W2T 86 Transistor W2T 06 Transistor W2T 58 texas instruments transistor manual vhf gmsk receiver qpsk transmitter using microcontroller 2N 8904 tdma noise reduce audio GMSK Gaussian filtered minimum shift keying
Text: two frequencies to a nonlinear component PIN = P1sin w1t + P2sin w2t [ POUT Power series , results from finite nature of device K K K [ transistor size bias current supply voltage


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PDF TSC6000 TMS320C54 TRANSISTOR W2T Transistor W2T 86 Transistor W2T 06 Transistor W2T 58 texas instruments transistor manual vhf gmsk receiver qpsk transmitter using microcontroller 2N 8904 tdma noise reduce audio GMSK Gaussian filtered minimum shift keying
1996 - TRANSISTOR BD139

Abstract: smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR BD139 transistor bd139 smd RF POWER TRANSISTOR NPN TRANSISTOR SMD catalog L6 smd transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES · Very high efficiency · Low supply voltage. 4 , the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor , (dB) C (%) CW, class-AB 900 4.8 600 6 60 1996 Feb 06 2 Philips


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PDF BLT70 SC08b OT223H OT223H MAM043 TRANSISTOR BD139 smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR BD139 transistor bd139 smd RF POWER TRANSISTOR NPN TRANSISTOR SMD catalog L6 smd transistor
2009 - 1A 300V TRANSISTOR

Abstract: No abstract text available
Text: KSC5402D/KSC5402DT NPN Silicon Transistor , Planar Silicon Transistor Features • • • â , /KSC5402DT Rev. C0 www.fairchildsemi.com 1 KSC5402D/KSC5402DT — NPN Silicon Transistor , Planar Silicon Transistor December 2009 Symbol Min. Typ. BVCBO Collector-Base Breakdown , =125°C VCE=1V, IC=1A Max. 4 6 Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A 0.6 V , =125°C 0.6 IF=0.4A TA=25°C 0.8 1.3 V TA=125°C 0.65 © 2009 Fairchild Semiconductor


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PDF KSC5402D/KSC5402DT O-220 1A 300V TRANSISTOR
2009 - NPN Transistor 1.5A 300V

Abstract: QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
Text: 0.6 www.fairchildsemi.com 5 KSC5402D/KSC5402DT - NPN Silicon Transistor , Planar Silicon , KSC5402D/KSC5402DT NPN Silicon Transistor , Planar Silicon Transistor Features · · · · · · , www.fairchildsemi.com 1 KSC5402D/KSC5402DT - NPN Silicon Transistor , Planar Silicon Transistor December 2009 , . 4 6 Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A 0.6 V 0.4 1.0 V TA , =25°C 0.86 1.5 V IF=0.2A TA=25°C 0.75 1.2 V TA=125°C 0.6 IF=0.4A TA


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PDF KSC5402D/KSC5402DT O-220 NPN Transistor 1.5A 300V QS 100 NPN Transistor 200H NPN Transistor VCEO 1000V
1998 - TRANSISTOR CATALOGUE

Abstract: UHF TRANSISTOR bd139 smd philips power transistor bd139 L6 TRANSISTOR SMD TRANSISTOR L6 bd139 application note power transistor bd139 smd for bd139 MGD202
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLT70 , 0.6 W, 10 T1 NPN transistor CATALOGUE No. BD139 2222 809 09004 4132 020 36640 , as a function of frequency; typical values. 1996 Feb 06 Fig.12 Definition of transistor , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. 1


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PDF BLT70 OT223H OT223H MAM043 TRANSISTOR CATALOGUE UHF TRANSISTOR bd139 smd philips power transistor bd139 L6 TRANSISTOR SMD TRANSISTOR L6 bd139 application note power transistor bd139 smd for bd139 MGD202
Not Available

Abstract: No abstract text available
Text: 06 Philips Semiconductors Product specification UHF power transistor BLT70 FEATURES , resistor 0.1 W, 390 Ω R3 metal film resistor 0.6 W, 10 Ω T1 NPN transistor , 1996 Feb 06 7 Philips Semiconductors Product specification UHF power transistor BLT70 , Feb 06 8 Philips Semiconductors Product specification UHF power transistor BLT70 , frequency; typical values. 1996 Feb 06 Fig.12 Definition of transistor impedance. 9 Philips


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PDF BLT70 OT223H OT223H MAM043
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
Text: on topology and switching transistor * supply from independent voltage source 6 PWM + CCM PFC , Transistor Forward Converter Single-ended Forward Converter Boost Converter T1 D1 LOUT VIN , , ICE3DS01 CIN Q1 D2S Q1 COUT VOUT D1P Disadvantages Power transistor drain-source , Advantages Demagnetizing the core is no problem Simple circuitry Disadvantages Power transistor , level of stray inductance Disadvantages Power transistor drain-source voltage VDS = VIN + Nx (VOUT


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 1QS01 TDA 16888 07N60C3 mosfet transistor TDA 16846 tda 3050 tda 1040 04n60c3
yg6260

Abstract: 2-10a1a AC701 2-16B1a 2-10R1A
Text: ize transistor stress. (1) Silicone grease A thin, even layer o f silicone grease should be applied betw een the transistor and heat sink to improve therm al resistance. Non-volatile silicone grease is , packages and thus shorten the life o f the transistor . The base oil o f Toshiba Silicone Grease YG6260 does n o t easily separate and thus does not adversely affect the life o f transistor . This does not , sink Insulating bushing ¿ 4.9 Transistor Mounting plate ¿3.6 ¿3.2 Fig. 2 Mounting


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PDF 2-16E2A) yg6260 2-10a1a AC701 2-16B1a 2-10R1A
2009 - Not Available

Abstract: No abstract text available
Text: (BISS) transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X QUICK REFERENCE , driver (e.g. relays, buzzers and motors). 3 DESCRIPTION 1 NPN low VCEsat transistor in a SOT89 , . * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4330X 2004 Dec 06 , ) transistor PBSS4330X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134


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PDF M3D109 PBSS4330X SC-62) R75/03/pp12
2010 - MGM219

Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
Text: . 1998 Jul 06 3 tp (s) 1 NXP Semiconductors Product specification UHF power transistor , .4. 1998 Jul 06 6 NXP Semiconductors Product specification UHF power transistor BFG21W , Semiconductors. 1998 Jul 06 9 NXP Semiconductors Product specification UHF power transistor , DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification


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PDF M3D124 BFG21W DCS1800, R77/03/pp11 MGM219 9335 895 BC817 BFG21W DCS1800 MGM224
2002 - ATC200B

Abstract: BLL1214-250 mld865
Text: transistor Product specification Supersedes data of 2002 Feb 05 2002 Aug 06 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , LDMOS transistor BLL1214-250 NOTES 2002 Aug 06 10 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 NOTES 2002 Aug 06 11 Philips , enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic


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PDF M3D379 BLL1214-250 OT502A SCA74 613524/02/pp12 ATC200B BLL1214-250 mld865
1998 - germanium transistor ac 128

Abstract: IBM REV 2.8 IBM43RF0100 IBM43RF0100EV09 SiGe POWER TRANSISTOR IBMSGRF0100 IBM43RF0100EV19 Power Transistor 2164 va sot-353 SOT-353 Mark va
Text: . IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features · Low Noise Figure: NFmin , Silicon-Germanium (SiGe) NPN transistor designed for high performance, low cost applications. Utilizing IBM's SiGe , applications requiring high performance such as LNAs, VCOs, and other low noise transistor applications , Collector Pin 5 Emitter 4 5 3 2 1 sgrf0100. 06 06 /09/00 1. Connection requires a low , Transistor Ordering Information Part Number Description IBM43RF0100 Supplied in Tape and Reel


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PDF IBM43RF0100 10dBm OT353 IBM43RF0100 sgrf0100 germanium transistor ac 128 IBM REV 2.8 IBM43RF0100EV09 SiGe POWER TRANSISTOR IBMSGRF0100 IBM43RF0100EV19 Power Transistor 2164 va sot-353 SOT-353 Mark va
2009 - CP1W-TS002

Abstract: CP1W-DA041 CP1W-MAD11 CP1W-DA021 manual CP1W-DA041 manual CP1W-AD041 CP1W-16ET1 CP1W-40EDR CP1E-N60DT-A Cp1w-AD041
Text: Functionality. · Versatile pulse control for Transistor Output for N14/20/30/40/60 or NA20 CPU Units. · PWM Outputs for Transistor Output for N14/20/30/40/60 or NA20 CPU Units. · Built-in RS-232C Port for N/NA-type , Transistor (sinking) Transistor (sourcing) 6 4 Relay 24 VDC Transistor (sinking) Transistor (sourcing) E-type , Supply Inputs Outputs Output type Relay 100 to 240 VAC Transistor (sinking) Transistor (sourcing) Relay 24 VDC Transistor (sinking) Transistor (sourcing) N-type CPU Units with 20 I/O Points Relay 100 to


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PDF /NA20D CP1E-E20DR-A CP1E-N40DR-A E30/40, N30/40/60 2356-81-300/Fax: 6835-3011/Fax: 847-843-7900/Fax: CP1W-TS002 CP1W-DA041 CP1W-MAD11 CP1W-DA021 manual CP1W-DA041 manual CP1W-AD041 CP1W-16ET1 CP1W-40EDR CP1E-N60DT-A Cp1w-AD041
2009 - SC6210

Abstract: MRC327 PBSS4330X
Text: VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X FEATURES , 06 4 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor , DESCRIPTION 1 NPN low VCEsat transistor in a SOT89 plastic package. 3 2 1 sym042 MARKING , PACKAGE TYPE NUMBER NAME PBSS4330X 2004 Dec 06 SC-62 DESCRIPTION plastic surface mounted


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PDF M3D109 PBSS4330X SC-62) R75/03/pp12 SC6210 MRC327 PBSS4330X
2010 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING  High power gain PIN  High efficiency 1, 3 , . DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power , 1998 Jul 06 f (GHz) VCE (V) PL (dBm) Gp (dB) C (%) 1.9 3.6 26 ï


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PDF M3D124 BFG21W DCS1800, R77/03/pp11
1997 - ZHB6790

Abstract: 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES , transistor on Q1 and Q3 on or Q2 and Q4 on equally Ptot 1.25 2 W W Derate above 25°C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 10 16 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 100 , Resistance Q1 and Q3 or Q2 and Q4 "On" Transient Thermal Resistance Single Transistor "On" 10 2.0


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PDF ZHB6790 OT223) ZHB6790 500mA H-bridge BR27 npn-pnp dual NPN/PNP transistor sot223 partmarking 6 C SM-8 BIPOLAR TRANSISTOR
2005 - transistor c63716

Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 transistor BC637 complement BCP55 BCP52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 - 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series , ; BCP55; BCX55 Philips Semiconductors 60 V, 1 A NPN medium power transistor 2. Pinning , . 06 - 18 February 2005 2 of 17 BC637; BCP55; BCX55 Philips Semiconductors 60 V, 1 A NPN medium power transistor 3. Ordering information Table 4: Ordering information Type number [1


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PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 transistor BC637 complement BCP55 BCP52
1998 - transistor c5

Abstract: "MARKING CODE P1" 9335 895 BC817 BFG21W DCS1800 philips ferroxcube
Text: .4. 1998 Jul 06 6 Philips Semiconductors Product specification UHF power transistor BFG21W , Semiconductors Product specification UHF power transistor BFG21W NOTES 1998 Jul 06 10 Philips Semiconductors Product specification UHF power transistor BFG21W NOTES 1998 Jul 06 11 Philips , DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips


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PDF M3D124 BFG21W DCS1800, SCA60 125104/00/03/pp12 transistor c5 "MARKING CODE P1" 9335 895 BC817 BFG21W DCS1800 philips ferroxcube
2014 - CP1W-DA021

Abstract: 2 digit storm distance counter manual CP1W-AD041 cp1w 40edr analog input cp1w-ad041 programming manual CP1W-40EDR
Text: outputs T : Transistor Outputs (sinking) T1 : Transistor Outputs (sourcing) 5. Power supply A : AC D , counters: 100 kHz, 4 axes Pulse outputs: 100 kHz, 2 axes (Models with transistor outputs only) DC , kHz, 2 axes (Models with transistor outputs only) DC power supply Memory capacity: 5K steps High-speed counters: 100 kHz, 4 axes Pulse outputs: 100 kHz, 2 axes (Models with transistor outputs only) DC power supply Transistor output (sinking) Transistor output (sourcing) 24 16


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PDF P72I-E-02 CP1W-DA021 2 digit storm distance counter manual CP1W-AD041 cp1w 40edr analog input cp1w-ad041 programming manual CP1W-40EDR
2005 - transistor C635

Abstract: c63516 BD9397 C635 Philips c635 transistor C6351 BCX54-SOT89 PHILIPS BCX54 transistor BC 147 BCP54, BCX54
Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 - 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series , ; BCP54; BCX54 Philips Semiconductors 45 V, 1 A NPN medium power transistor 2. Pinning , 2 1 1 sym042 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 06 , medium power transistor 3. Ordering information Table 4: Ordering information Type number [1


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PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips c635 transistor C6351 BCX54-SOT89 PHILIPS BCX54 transistor BC 147 BCP54, BCX54
MBH100

Abstract: SOT122A BLX94C
Text: 06 5 -4 Philips Semiconductors Product specification UHF power transistor BLX94C , 06 7 Philips Semiconductors Product specification UHF power transistor BLX94C 146 , DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION · Withstands full load mismatch NPN


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PDF BLX94C SC08b OT122A MBH100 SOT122A BLX94C
1998 - BLX94C

Abstract: MBH100 BLX94
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION · Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud , . 1996 Feb 06 9 Philips Semiconductors Product specification UHF power transistor BLX94C


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PDF BLX94C OT122A OT122A BLX94C MBH100 BLX94
BI 344 TRANSISTOR

Abstract: l43 transistor transistor dk qe 9335 895 DK 53 code transistor
Text: . 1998 Jul 06 3 Philips Semiconductors Product specification UHF power transistor , 97-05-21 1998 Jul 06 8 Philips Semiconductors Product specification UHF power transistor , Semiconductors Product specification UHF power transistor NOTES BFG21W 1998 Jul 06 10 Philips Semiconductors Product specification UHF power transistor NOTES BFG21W 1998 Jul 06 11 Philips , DISCRETE SEMICONDUCTORS s h eet BFG21W UHF power transistor Product specification Supersedes


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PDF BFG21W OT343R SCA60 04/00/03/pp1 BI 344 TRANSISTOR l43 transistor transistor dk qe 9335 895 DK 53 code transistor
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