The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2246CUH#TR Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC32, 5 X 5 MM, PLASTIC, MO-220WHHD-X, QFN-32, Analog to Digital Converter
LTC2246HLX#PBF Linear Technology LTC2246H - 14-Bit, 25Msps 125°C ADC In LQFP; Package: LQFP; Pins: 48; Temperature Range: -40°C to 125°C
LTC2246HLU#TRPBF Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32, 5 X 5 MM, LEAD FREE, PLASTIC, MS-026, TQFP-32, Analog to Digital Converter
LTC2246HLU Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32, 5 X 5 MM, PLASTIC, MS-026, TQFP-32, Analog to Digital Converter
LTC2246IUH#TR Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC32, 5 X 5 MM, PLASTIC, MO-220WHHD-X, QFN-32, Analog to Digital Converter
LTC2246HLU#PBF Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32, 5 X 5 MM, LEAD FREE, PLASTIC, MS-026, TQFP-32, Analog to Digital Converter

Transistor TT 2246 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - ac voltage stabilizer circuit diagram

Abstract:
Text: OVDD 0.5 0 ­0.5 ­1.0 ­1.5 CLOCK/DUTY CYCLE CONTROL ­2.0 0 2246 TA01 4096 8192 CODE 12288 16384 2246 TA01b CLK 2246hf 1 LTC2246H ABSOLUTE MAXIMUM RATINGS , 16384 4096 8192 CODE 12288 ­120 16384 2 4 6 8 10 FREQUENCY (MHz) 2246 G02 2246 G01 8192 Point FFT, fIN = 30MHz, ­1dB, 2V Range, 25Msps 12 2246 G03 8192 Point FFT, fIN , FREQUENCY (MHz) 12 2246 G04 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G05 ­120 0 2


Original
PDF LTC2246H 14-Bit, 25Msps 575MHz 14-Bit) LTC2226H 12-Bit) 32-Pin ac voltage stabilizer circuit diagram AZ1000ELT21 Transistor 2246 stabiliser circuit diagram ADC 8 channels, 10msps lt 715 1111 pipeline adc Analog Marking Information CMOS RS232 Level Converter to 2.8V marking d6
2004 - pin diagram of ic 4520

Abstract:
Text: * 2248 2248 2247 2247 2246 2246 LTC2248CUH LTC2248IUH LTC2247CUH LTC2247IUH LTC2246CUH , ­110 0 4096 8192 CODE 12288 16384 4096 0 8192 CODE 12288 2246 G01 16384 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 2246 G02 12 2246 G03 LTC2246: 8192 , ­110 ­110 ­120 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G04 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G05 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 12


Original
PDF LTC2248/LTC2247/LTC2246 14-Bit, 65/40/25Msps 2248/LTC2247/LTC2246 14-bit 65Msps/ 40Msps/25Msps, LTC2248/LTC2247/LTC2246 65Msps/40Msps/25Msps 205mW/120mW/75mW pin diagram of ic 4520 16 pin description of IC 4520 Transistor 2246 capacitor 2247 S 2530 A LTC2255 LTC2227 LTC2228 LTC2229 LTC2247
Horizontal Transistor TT 2246

Abstract:
Text: loops and in some cases cause transistor failures. The TTL monitor has provisions at the printed circuit , stage for the monitor. Refer to figure 3-1 and schematic at rear of manual. Transistor Q103 and its , . R118 and R119 provide series feedback which makes the voltage gain relatively independent of transistor , VERTICAL DEFLECTION AMPLIFIER Transistor Q101 is a programmable unijunction transistor and with its , Q1 uses a power type transistor operating as a class B amplifier. The output is transformer coupled


OCR Scan
PDF 55164-TELEPHONE: IM1017 TV-15 4-H-75" Horizontal Transistor TT 2246 Transistor TT 2246 CRT Monitor repair schematic circuit diagram of crt monitor yoke coil hv flyback transformer In400I Diode IN5398 3PDT switch 9 pin true bypass TT 2246 transistor J103 scr
2004 - 24D10

Abstract:
Text: * 2248 2248 2247 2247 2246 2246 Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free , , 25Msps ­50 ­60 ­70 ­80 ­90 ­100 ­110 ­120 0 2 4 6 8 10 FREQUENCY (MHz) U W 2246 G01 1.00 , 0 4096 8192 CODE 12288 16384 2246 G02 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G03 0 ­10 ­20 ­30 LTC2246: 8192 Point FFT, ­40 fIN = 70MHz, ­1dB, 2V Range, 25Msps ­50 , Range, ­50 ­60 ­70 ­80 ­90 ­100 ­110 ­120 25Msps 12 2246 G04 0 2 4 6 8 10 FREQUENCY (MHz


Original
PDF LTC2248/LTC2247/LTC2246 14-Bit, 65/40/25Msps 65Msps/40Msps/25Msps 205mW/120mW/75mW 575MHz 125Msps: LTC2253 12-Bit) LTC2255 24D10
2004 - IC TTL 741 OP AMP

Abstract:
Text: × 5mm) PLASTIC QFN 2248 2247 2246 TJMAX = 125°C, JA = 34°C/W EXPOSED PAD IS GND (PIN 33 , 16384 4096 0 8192 CODE 12288 2246 G01 16384 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 2246 G02 12 2246 G03 LTC2246: 8192 Point FFT, fIN = 70MHz, ­1dB, 2V Range , 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G04 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G05 ­120 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G06 224876f 9 LTC2248


Original
PDF LTC2248/LTC2247/LTC2246 14-Bit, 65/40/25Msps 65Msps/40Msps/25Msps 205mW/120mW/75mW 70MHz 140MHz 575MHz 80Msps: LTC2229 IC TTL 741 OP AMP LTC2246 marking d4 LTC2247 LTC2245 LTC2229 LTC2228 LTC2227 LTC2226 LTC2225
iCL7680

Abstract:
Text: provide a standard pulse-width modulated output drive to an external transistor switch. The boost section , comparator current 2 2 0141-2 Figure 2: Functional Diagram Figure 3: System Schematic 2-246 _ This


OCR Scan
PDF ICL7680 ICL7680 ICL7680MJE ICL7680MJE transistor amplifier 5v to 15v Transistor 2246 Comparator amplifier 14 pin
2003 - 127324

Abstract:
Text: Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium , / 72.440 2.370 / 69.618 2.246 / 66.896 2.133 / 64.258 2.032 / 61.696 1.940 / 59.200 1.855 / 56.763 , / 75.148 2.246 / 72.032 2.121 / 69.041 2.009 / 66.159 1.908 / 63.373 1.816 / 60.670 1.733 / 58.043


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010 127324 CRF-24010-101 42676 Cree Microwave 121-985 Ts 537 br 354 428 744 231 091 6.110 SIC
iCL7680

Abstract:
Text: transistor switch. The boost section senses the positive power supply output voltage via an in ternal thin , ) Figure 3: System Schematic 2-246


OCR Scan
PDF ICL7680 ICL7680 L7680 \ICL7680 ICL7680MJE
Transistor TT 2246

Abstract:
Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT , Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally , 0.91 1.00 1.08 1.19 1.31 1.38 1.42 1.38 1.63 G m ax1 1 ' dB 25.46 22.46 19.50 17.77 , ICKN ESS C Tt 5.4 ± 0.10 0.062 ± 0.001 DISTANCE CAVITY TO PERFO RATION (WIDTH , : 1-800-235-0312 or 408-654-8675 F a r E ast/A u stra la sia : (65) 290-6305 CA R R IER TA P E W Tt (CO


OCR Scan
PDF ATF-36163 OT-363 5964-4069E 5965-4747E Transistor TT 2246
transistor zo 607

Abstract:
Text: Ordering number : EN 5432 J No.5432 FC 156 I SAKYO NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The , specifications shown above are for each individual transistor . Marking: 156 Electrical Connection Cl E2 C2 Q O , -52.2 1600 0.328 163.4 2.476 59.5 0.183 61.2 0.334 -56.4 1800 0.335 154.5 2.246 54.6 0.204 60.5 0.328


OCR Scan
PDF FC156 2SC5226, 20with transistor zo 607 2SC5226 ao41 FC 0137 ic 2429 sn 0426 transistor z 0607 ZS22
1995 - telefunken IC 121

Abstract:
Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure D High power gain D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 2 3 1 4 94 9279 , MAG dB ­38.24 ­32.38 ­29.04 ­26.71 ­25.05 ­23.61 ­ 22.46 ­21.52 ­20.74 ­20.07 ­19.36


Original
PDF D-74025 telefunken IC 121
k 2968 toshiba

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SK2497 GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 2SK2497 U nit in mm 2.16 · · Low Noise Figure : NF = 1.2dB (f=12GHz) High Gain : Ga = 10dB (f=12GHz) ± 0.2 1.1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Gate-Drain Voltage Gate-Source Voltage D rain C urrent Power Dissipation Channel Tem perature , 25 5.212 5.000 4.707 4.344 3.908 3.540 3.205 2.968 2.800 2.587 2.403 2.246 2.055 1.781 131 113 91 77


OCR Scan
PDF 2SK2497 12GHz) --10mA k 2968 toshiba
Z158

Abstract:
Text: TOSHIBA 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current TGSS VDS = 0, Vqs = — 2V — — -20 //A Drain Current idss VDS = 2V, VGS = 0 15 40 80 mA Gate-Source Cut-off , 0.113 150 14000 0.529 64 2.246 -50 0.120 -50 0.135 118 15000 0.593 43 2.055 -70 0.123 -65 0.185 75


OCR Scan
PDF 2SK2497 12GHz 12GHz Z158 2SK2497 3205 transistor S2L 92
2000 - NFC12

Abstract:
Text: RF2175 Preliminary · Portable Battery-Powered Equipment · 3V TETRA Cellular Handsets · 3V CDMA Cellular Handsets The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the , C6 2.2 uF 2-246 C5 100 pF C7 47 pF C8 13 pF L6 12 nH C6 1 nF VCC C10


Original
PDF RF2175 RF2175 380MHz 512MHz NFC12
2002 - Not Available

Abstract:
Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron , 1.600GHz 0.818 / -148.084 2.246 / 72.032 0.107 / -10.553 0.502 / -142.219 1.700GHz 0.818 , / -155.183 2.370 / 69.618 0.091 / -13.047 0.501 / -150.104 1.800GHz 0.830 / -157.231 2.246


Original
PDF CRF24010 CRF24010 CRF240 F24010F
2000 - 68089

Abstract:
Text: uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 , 139.08 2.00 -17.71 -30.24 13.36 -132.58 - 22.46 -153.55 -14.46 124.06 2.10 , -13.60 2.60 -13.27 139.18 10.27 139.43 -21.61 129.44 -13.29 22.46 2.80


Original
PDF SGL-0263 SGL-0263 50-ohm EDS-101502 68089 1.4832 an 17828 C - 4834 transistor SOT-363 marking ROHM
2005 - 42676

Abstract:
Text: Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium , / 72.440 2.370 / 69.618 2.246 / 66.896 2.133 / 64.258 2.032 / 61.696 1.940 / 59.200 1.855 / 56.763 , / 75.148 2.246 / 72.032 2.121 / 69.041 2.009 / 66.159 1.908 / 63.373 1.816 / 60.670 1.733 / 58.043


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010 42676 88933 CRF-24010-001 CRF-24010-101
2004 - Transistor TT 2246

Abstract:
Text: Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum , 1.31 1.38 1.42 1.38 1.63 Gmax[1] dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 , THICKNESS) Tt (COVER TAPE THICKNESS) 10° MAX. K0 10° MAX. A0 B0 DESCRIPTION CAVITY LENGTH , D P0 E W t1 C Tt F P2 SIZE (mm) 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55


Original
PDF ATF-36163 OT-363 SC-70) ATF-3610025 5965-4747E 5989-1915EN Transistor TT 2246 TT 2246 transistor
2004 - Not Available

Abstract:
Text: QFN PART MARKING* 2248 2248 2247 2247 2246 2246 LTC2248CUH LTC2248IUH LTC2247CUH , 4096 8192 CODE 12288 16384 –110 4096 0 8192 CODE 12288 2246 G01 16384 –120 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G03 LTC2246: 8192 Point FFT, fIN = , (dB) 0 2246 G02 LTC2246: 8192 Point FFT, fIN = 70MHz, –1dB, 2V Range, 25Msps LTC2246 , €“120 0 2 4 6 8 10 FREQUENCY (MHz) 12 2246 G04 0 2 4 6 8 10 FREQUENCY (MHz


Original
PDF LTC2248/LTC2247/LTC2246 14-Bit, 65/40/25Msps 2248/LTC2247/LTC2246 14-bit 65Msps/ 40Msps/25Msps, LTC2248/LTC2247/LTC2246 65Msps/40Msps/25Msps 205mW/120mW/75mW
2003 - 127324

Abstract:
Text: ) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared , / 85.096 3.039 / 81.675 2.840 / 78.445 2.665 / 75.375 2.509 / 72.440 2.370 / 69.618 2.246 / 66.896 , 3.408 / 93.564 3.146 / 89.373 2.917 / 85.485 2.717 / 81.845 2.541 / 78.410 2.385 / 75.148 2.246


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010 127324
2004 - Not Available

Abstract:
Text: carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties , / 81.675 2.840 / 78.445 2.665 / 75.375 2.509 / 72.440 2.370 / 69.618 2.246 / 66.896 2.133 / 64.258 , 3.146 / 89.373 2.917 / 85.485 2.717 / 81.845 2.541 / 78.410 2.385 / 75.148 2.246 / 72.032 2.121


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010
2004 - Cree Microwave

Abstract:
Text: Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium , / 72.440 2.370 / 69.618 2.246 / 66.896 2.133 / 64.258 2.032 / 61.696 1.940 / 59.200 1.855 / 56.763 , / 75.148 2.246 / 72.032 2.121 / 69.041 2.009 / 66.159 1.908 / 63.373 1.816 / 60.670 1.733 / 58.043


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010 Cree Microwave CRF-24010-001 CRF-24010-101
2002 - Not Available

Abstract:
Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron , 1.600GHz 0.818 / -148.084 2.246 / 72.032 0.107 / -10.553 0.502 / -142.219 1.700GHz 0.818 , / -155.183 2.370 / 69.618 0.091 / -13.047 0.501 / -150.104 1.800GHz 0.830 / -157.231 2.246


Original
PDF CRF24010 CRF24010 CRF240 F24010F
2003 - 127324

Abstract:
Text: Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium , / 72.440 2.370 / 69.618 2.246 / 66.896 2.133 / 64.258 2.032 / 61.696 1.940 / 59.200 1.855 / 56.763 , / 75.148 2.246 / 72.032 2.121 / 69.041 2.009 / 66.159 1.908 / 63.373 1.816 / 60.670 1.733 / 58.043


Original
PDF CRF-24010-001 CRF-24010-101 CRF-24010 127324 2400G CRF-24010-001 CRF-24010-101
2002 - ATC1206

Abstract:
Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree's CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron , 1.600GHz 0.818 / -148.084 2.246 / 72.032 0.107 / -10.553 0.502 / -142.219 1.700GHz 0.818 , / -155.183 2.370 / 69.618 0.091 / -13.047 0.501 / -150.104 1.800GHz 0.830 / -157.231 2.246


Original
PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A CRF24010F DSA00291593.txt HI1206 JESD22-A114
Supplyframe Tracking Pixel