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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor SJ Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract:
Text: .1 Applications for IceMOS MEMS SJ MOSFET IceMOS Technology Corporation 2 Recently a revolutionary device concept termed MEMS MOSFET transistor has emerged to break through the theoretical limits of conventional , commercial applications. This super-junction transistor is based on the concept of charge compensation , voltage is achieved in a super-junction transistor . In other words, a super-junction transistor can offer , at the same time. 600-volt power MOSFETs based on the SJ concept have demonstrated as much as a 5X


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PDF 700volt
70413080

Abstract:
Text: SEMI-CONDUCTOR/ TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE , IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-220 TRANSISTOR 2005M , 65837* SDS-7204, 1034 2N3439, MJE-3439 70407204 TUBE DRIVER, REPLACE PAIR SJ -5884 MJE


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PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
relay contactor wiring diagrams

Abstract:
Text: "MICRO LINE" AC Contactors & Starters, DC Operated FEATURES CAN BE DIRECTLY DRIVEN BY TRANSISTOR , controller (PLC) or other electronic equipment. The power consumption of the SJ -0G contactor (U.S. Cat. No , transistor output of a PLC or electronic equipment such as photoelectric switch, or a proximity limit , (standard accessory). The SJ -0G (U.S. Cat. No.1JC0A0) has a standard finger protection cover to prevent , Contactor Starter (Non-Reversing, Open Type) SJ -0G/UL (U.S. SJ-OWG/UL(U.S. Cat. No.1JC0A0#) Cat


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ST25C transistor

Abstract:
Text: 2S002 J623 150m 150m 150m 3.0M 4.0MA 4.0M 769u SJ 30 45 15 1.0 25m 25m 25m 5.0 3On0 5.0 5.00 I.Om I.Om , A 22 23 24 2N904 CDQ10003 NS063 150m 150m 150m 8.0MA 8 0M 8.0M 1.0m lOm I.Om SA SJ U 45 45 45 30 , NS066 150m 150m 150m 10MA 10M 10M 1.2m 1.0m 1.0m SS SJ SJ 30 45 45 15 4.0 1.0 1 0 25m 25m 2.OU0 2 , ME TO 5 T05 0 31# 32 33 THP106 NS069 4C28 150m 150m 150m 10.M 11M 12M 1.0m 1.4m SJ ♦J 30 45 40 30 , CDQ10009 NS072 150m 150m 150m 12M 13M 13M 1.4m 1.0m 1.0m ♦J SJ SJ 40 45 45 30 2.0 1.0 1.0 25m 25m 25m 2


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 ST25C transistor TRANSISTOR st25a TRANSISTOR 2n906 ST25A transistor TRANSISTOR st25c transistor 2N905 2N904 2N906 DIODE SJ 98 ST25A
DIODE SJ 98

Abstract:
Text: ) (mhos) (ft) X.0001 (F) Ser. 1 USAF515ES046 dt 250m 100MSA 1.4m SJ 40 25 5.0 , PE u 13 4 MT726 250m 180MS 1.7m SJ 25 5.0 50m 1.00 1Om0 15 tA 5.Op PE u 13 5# 2SA402 250m 200MS 60 sj 35 30 100m 1 .Ou 6.00 ,2.Om0 200 t 6.Od PE TO 18 6# AT331 250m 200MS 2.5m ♦J 20 , 25d PL 9 MD3133F* 250m 200MSA 1.4m SJ 50 35 4.0 600m .O5u0 100 1 5Om0 40 t#A 1Op0 ANA T089 , MT241 1 250m 200M5 1.7m SJ 25 5.0 100m .01 u .500 1Om0 20 tA 3.7d PE u13 12 MT2412 250m 200MS


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 silicon epitaxial mesa diode microwave switch DARLINGTON 3A 100V npn array CA3036 V405T AT331 A431 ic U34 MA3232 MT726
NS1000 n

Abstract:
Text: 2.3m SJ 40 35 35 1.Ou0 6.00 1 -Om 50 A DE T05 A 21 NS663 400m 1.0M5A 2.3m S.l 50 35 35 1 .Ou0 6.00 1.0m 50 A DE TO 5 A 22 NS664 400m 1.0MSA 2.3m SJ 50 50 50 1 .Ou0 6.00 1 .Om 50 A 2Op0 , 2.3m SJ 30 30 5.0 100m .01 u0 6.00 I.Om 85 1Op0 E TO 5 A 26 C9082 400m 5.0M 2.3m SJ 30 30 5 0 100m .01 u0 6.00 I.Om 85 1Op0 E T018 A 27 C9084 400m 5.0M 2.3m SJ 30 30 50 100m .01 u0 6.00 I.Om 85 1OP0 E R135 A 28 C9081 400m 8.0M 2.3m SJ 30 30 5 0 100m .O1u0 6.00 I.Om 155 1Op0 E TO 5


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V 2CY38 transistor A431 usaf521es071 A431 2n1132a transistor DARLINGTON 3A 100V npn array dm02b
2001 - Diode SJ

Abstract:
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES s FEATURES q q q q q UL, CSA , INFORMATION [Example] (a) SJ ­ 12 (a) (b) D 01 HZ R N (c) (d) (e) (f) (g) Series Name SJ : SJ Series (b) Nominal Voltage (Input side) 3 : 3 VDC (only AC type) 5 : 5 VDC 12 : 12 VDC , ) Output Polarity (DC Type) Nil : Standard Polarity R : Reverse Polarity 1 SJ SERIES s SAFETY , Voltage SJ -( ) A01 5 VDC to 24 VDC 1A 265 VAC resistive SJ -( ) D01 5 VDC to 24 VDC 1A


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2006 - DIODE marking code SJ

Abstract:
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL , ORDERING INFORMATION [Example] SJ ­ 12 D 01 HZ R N (a) (b) (c) (d) (e) (f) (g , Voltage (d) (e) (g) (f) SJ : SJ Series 3: 3 VDC , Polarity R: Reverse Polarity : Diode : Zener diode type 1 SJ SERIES n SAFETY , Voltage SJ -( ) A01 5 VDC to 24 VDC 1 A 265 VAC resistive SJ -( ) D01 5 VDC to


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2003 - Diode SJ

Abstract:
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES s FEATURES q q q q q UL , INFORMATION [Example] (a) SJ ­ 12 (a) (b) D 01 HZ R N (c) (d) (e) (f) (g) Series Name SJ : SJ Series (b) Nominal Voltage (Input side) 3 : 3 VDC (only AC type) 5 : 5 VDC 12 : 12 VDC , ) Output Polarity (DC Type) Nil : Standard Polarity R : Reverse Polarity 1 SJ SERIES s SAFETY , Voltage SJ -( ) A01 5 VDC to 24 VDC 1A 265 VAC resistive SJ -( ) D01 5 VDC to 24 VDC 1A


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2002 - Diode SJ

Abstract:
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES s FEATURES q q q q q UL , INFORMATION [Example] (a) SJ ­ 12 (a) (b) D 01 HZ R N (c) (d) (e) (f) (g) Series Name SJ : SJ Series (b) Nominal Voltage (Input side) 3 : 3 VDC (only AC type) 5 : 5 VDC 12 : 12 VDC , ) Output Polarity (DC Type) Nil : Standard Polarity R : Reverse Polarity 1 SJ SERIES s SAFETY , Voltage SJ -( ) A01 5 VDC to 24 VDC 1A 265 VAC resistive SJ -( ) D01 5 VDC to 24 VDC 1A


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2008 - DIODE marking code SJ

Abstract:
Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL , l l n ORDERING INFORMATION [Example] SJ ­ 12 D 01 HZ R N (a) (b) (c) (d) (e , ) (c) Load Voltage (d) (e) (g) (f) SJ : SJ Series , 1 SJ SERIES n SPECIFICATIONS AC DC Item TYPE 1A TYPE 1A INPUT side Nominal , Flammability: UL 94-V0 (plastics) [SJ-C ( ) A01] 1A, 265VAC (resistive) [ SJ -( ) D01] 1A, 30VDC (resistive


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A1381 transistor

Abstract:
Text: $ 500m$ 500m 25 0$ 25 0$ 62 SJ SJ SJ 5.0 5.0 7.0 1.0 1.0 2.0 80 80 400 3.0 3.0 5.0 80 80 180 1.Om0 1 , 500m 500m 500m 45 0 % 1 IJ SJ 500m 6OOm0 100 80 40 9.0 10 6.0 100 1 80 20 10m0 1.Ou0 150 9.00 2.0 1.0 , 2.0 $J SJ 500m 12 6OOm0 5.0 40 135 6.0 7.0 20 100 1.Ou0 1.Ou0 9.00 1.00 20m 1.0 20 t 35 150 # 100MIA , # 2SC1325 2SD322 2SD323 640m 64Om0 64Om0 80 0 80 0 80 0 s SJ SJ 6.0 7.0 7.0 1.5k 120 150 6.0 7.0 7.0 600 80 , IJ SJ 15 15 15 7.0 7.0 7.0 130 130 150 6.0 7.0 6.0 120 120 140 100 4.00 100 3.0 4.0 3.0 18 20 18 55


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 MA3232 NF Amp NPN Silicon transistor TO-3 20C26 2N5034 package 2N5034 L29a 2N5035
2012 - IPA50R500CE

Abstract:
Text: ) . 5 2 Superjunction ( SJ ) Principle , . 7 2.2.2 BJT (Bipolar Junction Transistor )-Effect , MOSFETs designed according to the revolutionary superjunction ( SJ ) principle in the 500V class. 500V CE portfolio provides all benefits of a fast switching superjunction ( SJ ) MOSFET while keeping ease of use and , the fundamental differences between a SJ MOSFET and a standard MOSFET. Additionally, all features and


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PDF ED-29, IPA50R500CE DIODE V10-20 IPA50R280CE mosfet equivalent 400W pwm smps schematic IPA50R280C LLC resonant smps resonant llc full bridge SWITCHING bjt 500v
2010 - 5R380CE

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOSTM CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOSTM CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM CE series combines the experience of the leading SJ


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PDF IPx50R380CE IPP50R380CE, IPA50R380CE IPI50R380CE 5R380CE 5R38 IPI50R380CE IPP50R380CE 5r380 ID032
1999 - OPTO SFH 617 A-2

Abstract:
Text: [EVVERXIH GLEVEGXIVMWXMGW 8IVQW SJ HIPMZIV] ERH VMKLXW XS XIGLRMGEP GLERKI VIWIVZIH ;I LIVIF] HMWGPEMQ ER] ERH EPP [EVVERXMIW MRGPYHMRK FYX RSX PMQMXIH XS [EVVERXMIW SJ RSRMRJVMRKIQIRX VIKEVHMRK GMVGYMXW , 8IGLRSPSKMIW 'SQTSRIRXW QE] SRP] FI YWIH MR PMJIWYTTSVX HIZMGIW SV W]WXIQW [MXL XLI I\TVIWW [VMXXIR ETTVSZEP SJ -RJMRISR 8IGL RSPSKMIW MJ E JEMPYVI SJ WYGL GSQTSRIRXW GER VIEWSREFP] FI I\TIGXIH XS GEYWI XLI JEMPYVI SJ XLEX PMJIWYTTSVX HIZMGI SV W]WXIQ SV XS EJJIGX XLI WEJIX] SV IJJIGXMZIRIWW SJ XLEX HIZMGI SV W]WXIQ


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PDF 16846/TDA MUR120 N6055 1N4007 F/385 AES02738 P-DIP-14-3 GPD05584 OPTO SFH 617 A-2 spp n6055 N6055 diode mur4100 TDA 16846 P Diode BYW 56 IC tda 16846 sfh diode 617 TDA 16847
2010 - 6r2k0c6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOSTM C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPD60R2K0C6 6r2k0c6 g1 TRANSISTOR SMD MARKING CODE IPD60R2K0C6 JESD22
2010 - 6R380e6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOSTM E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM E6 Power Transistor 1 IPP60R380E6, IPA60R380E6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle , SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast


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PDF IPx60R380E6 IPP60R380E6, IPA60R380E6 6R380e6 IPA60R380E6 IPP60R380E6 IPA60R380C6 IPP60R380E JESD22 TO-220 package thermal resistance
2010 - 6R520E6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOSTM E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM E6 Power Transistor 1 IPP60R520E6, IPA60R520E6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM E6 series combines the experience of the leading SJ


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PDF IPx60R520E6 IPP60R520E6, IPA60R520E6 6R520E6 6r520 IPA60R520E6 JESD22 TO-220 package thermal resistance
2009 - 6R070C6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM C6 Power Transistor 1 IPW60R070C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPW60R070C6 6R070C6 IPW60R070C6 JESD22 TRANSISTOR Outlines
2009 - 6R070C6 MOSFET TRANSISTOR

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Data Sheet Rev. 0.9, 2009-08-10 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description Pr mi eli , superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all


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PDF IPW60R070C6 6R070C6 MOSFET TRANSISTOR
2010 - 6r3k3c6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOSTM C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
2010 - 6r070c6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOSTM C6 Power Transistor 1 IPW60R070C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPW60R070C6 6r070c6 IPW60R070C6 IF-258 JESD22
2010 - 6R070C6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOSTM C6 Power Transistor 1 IPW60R070C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPW60R070C6 6R070C6 6R070C6 MOSFET TRANSISTOR IPW60R070C6 c6 transistor infineon MOSFET parameter test JESD22
2011 - Not Available

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET


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PDF IPW65R070C6
2010 - 6r1k4c6

Abstract:
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOSTM C6 Power Transistor IPD60R1K4C6 Data Sheet Rev. 2.0, 2010-07-19 Final Industrial & Multimarket 600V CoolMOSTM C6 Power Transistor 1 IPD60R1K4C6 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction ( SJ ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET


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PDF IPD60R1K4C6 6r1k4c6 IPD60R1K4C6 smd diode EG - 413 Diode SMD SJ 94 Diode SMD SJ 98 JESD22 MOSFET TRANSISTOR SMD MARKING CODE 11
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