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Part Manufacturer Description Datasheet Download Buy Part
LTC1100CJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100CJ8 Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC, CERDIP-8, Instrumentation Amplifier
LTC1100CN Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier
LTC1100CSW#TRPBF Linear Technology LTC1100 - Precision, Zero-Drift Instrumentation Amplifier; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1100MD#40167 Linear Technology LTC1100 - Precision, Zero-Drift Instrumentation Amplifier; Package: ; Pins: 0; Temperature: Military
LTC1100ACJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Instrumentation Amplifier

Transistor No C110 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor C110

Abstract: Transistor No C110 GLV12-54 led receiver H160 GLV12 TRANSISTOR Y 330
Text: : Transistor , Normally Open or Normally Closed SUPPLY VOLTAGE HYSTERESIS 2-meter cable, PVC covered 4 , reflector H85 reflector 50mm-1m 50mm-1m 0-2m 0-2m Yes Yes No No GLV12-54/36 , ADJUSTMENT REFERENCE TARGET REFLECTOR DISTANCE POLARIZED FILTER MODEL NUMBER(S) OUTPUT: Transistor , . Sensing Range Movement Characteristics GLV12-54 Reflectors H85 C110 -2 H60 H160 50 Offset Y , Distance X [m] Excess Gain vs. Sensing Range Offset Y [mm] Reflectors H85 C110 -2 H60 H160


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PDF GLV12 200mm BF5-30 transistor C110 Transistor No C110 GLV12-54 led receiver H160 TRANSISTOR Y 330
G3N60B3

Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Text: have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , °C. .'c25 7.0 A AtTc = 110°C. .> C110 3.5 A Collector , Collector to Emitter Saturation Voltage vce(sat) 'c = ' c110 . VGE = 15V Tc = 25°C - 1.8 2.1 V Tc = 150 , - V On-State Gate Charge Qg(ON) 'c = ' c110 . vCE = 0.5 BVces VGE = 15V - 18 22 nC VGE = 20V - 21 25 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C lCE= ' c110 vCE = 0.8 BVces VGe


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PDF HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 G3N60B3 Transistor No C110 transistor C110 tr c110 HGTD3N60B3S HGTD3N60B3S9A LD26
2009 - um0670

Abstract: AN2928 L6562A LED L6562A um0670 80w N67 FERRITES 1nF Y1 CAPACITOR power supply driver led 80W schematic L78L33 Datasheet E25 SMD diode
Text: capacitor C110 is not below 12.5 V during no brightness. Figure 42. Design improvement allowing zero , capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 33 Design improvement allowing , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 35 Doc ID , external PWM generator can be used for LED brightness regulation. If no PWM generator is connected to the


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PDF UM0670 STEVAL-ILL013V1 um0670 AN2928 L6562A LED L6562A um0670 80w N67 FERRITES 1nF Y1 CAPACITOR power supply driver led 80W schematic L78L33 Datasheet E25 SMD diode
2009 - power supply driver led 80W schematic

Abstract: AN2928 l6562A boost pfc led UM0670 L6562A LED um0670 80w L78L33 L6562A c112 230 VAC STEVAL-ILL013V1
Text: V) the transistor is opened and charges C110 and C107. Therefore, it is possible to change the , evident that the supply voltage on capacitor C110 is not below 12.5 V during no brightness. Figure 42 , D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Improper startup without using diode D104 and capacitor C110 . . . . . . . . . . . . . . . . . . . . 32 Design improvement , capacitor C110 and output bus voltage of 400 V . . . . . . . . . . . . . . . . . . . . . . . 34 Doc ID


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PDF UM0670 STEVAL-ILL013V1 ID15327 power supply driver led 80W schematic AN2928 l6562A boost pfc led UM0670 L6562A LED um0670 80w L78L33 L6562A c112 230 VAC
G20N60B3D

Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
Text: impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower on-state , ' C110 . VGE = 15V Tc = 25°C - 1.8 2.0 V Tc = 150°C - 2.1 2.5 V Gate to Emitter Threshold Voltage , 600V 30 A Gate to Emitter Plateau Voltage vgep 'c = ' c110 . vce = 0-5 BVCEs - 8.0 - V On-State Gate Charge qg(ON) 'c = ' C110 . VCE = 0.5 BVces VGE=15V - 80 105 nC Vqe = 20V - 105 135 nC Current Turn-On Delay Time ^d(ON)l Tc = 150°C, 'ce = > c110 vCE = 0.8 BVces, Vge = 15V Rg = 10£i, L = 100nH - 25 - ns


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PDF HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n
G12N60b3

Abstract: G12N60B G12N60 TB334 LD26 HGTP12N60B3D HGTP12N60B3 HGT1S12N60B3S9A HGT1S12N60B3S Bipolar HJ
Text: impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower on-state , VGEP 'C = > C110 . VCE = 0 5 bvCES - 7.3 - V On-State Gate Charge Qg(ON) 'c = > C110 . VCE = 0.5 BVCES , = 25°C 'CE = > C110 VCE = 0.8 BVCES Vge = 15V RG = 25Q L = 1 mH Test Circuit (Figure 17) - 26 - ns , UNITS Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 150°C 'CE = > C110 VCE = 0.8 BVces Vge , tested per JEDEC Standard No . 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This


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PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B G12N60 TB334 LD26 HGTP12N60B3D HGT1S12N60B3S9A Bipolar HJ
2008 - c103 TRANSISTOR

Abstract: c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 c103 TRANSISTOR equivalent FOD121 viper22 AU103
Text: adapters. This loss is incurred even when there is no load applied. The cause of this inefficiency is that , at no load. It won't restart until the output is loaded ( wake on load ) or the output capacitor is , line input during shutdown period. By doing so, the no load power consumption of this adapter can be , , R109, Q101 and D106. D106 is a 36V zener diode. It clamps the base voltage of NPN transistor Q101 at , 5V, I OC = 0.4 mA. This current is coupled to the transistor side of the optocoupler and pulls down


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PDF RD-166 CSP-9-111S2) CSP-9-111S2. c103 TRANSISTOR c103 mosfet TRANSISTOR Viper22 application PA2865NL PA2685NL AT-339 c103 TRANSISTOR equivalent FOD121 viper22 AU103
g30n60b3

Abstract: G30N60 TA49170 hgtp30n60b3d LD26 HGTG30N60B3 C110 vqe 24 d MOSFET 600v 60a tr c110
Text: transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT , - 3.0 mA Collector to Emitter Saturation Voltage VCE(SAT) 'c = > C110 . VGE = 15V Tc = 25°C - 1.45 , Emitter Plateau Voltage VGEP ■c = ' C110 . VCE = 05 BVCES - 7.2 - V On-State Gate Charge Qg(ON) 'c = > C110 . VCE = 0.5 BVces VGE = 15V - 170 190 nC Vge = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C 'CE = > C110 vCE = 0.8 BVces VGe = 15V RG= 3Q L = 1 mH Test Circuit


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PDF HGTG30N60B3 HGTG30N60B3 TA49170. O-247ration g30n60b3 G30N60 TA49170 hgtp30n60b3d LD26 C110 vqe 24 d MOSFET 600v 60a tr c110
transistor c114

Abstract: RLI-135 viper 224 VIPER53 VIPer53 Application Note transistor c114 diagram c113 transistor transistor c113 J107 DIODE VIPER53 application
Text: disabled and no more energy is passed on secondary side. So, the output voltage is decreasing and the , primary winding of the transformer) and no audible noise is generated. In addition, the minimum turn on , ). It is built with R14, DZ14, Q1 and C12. Notice that the VCE0 of this transistor must be higher than 80 V. This transistor may also dissipate 0.7 W when input voltage is 250 VAC. The COMP pin , 100nF U2A PC817 C110 10uF/63V 6 R102 680 C111 100nF 8 4 GND Vref VCC


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PDF AN2067 VIPer53 transistor c114 RLI-135 viper 224 VIPER53 VIPer53 Application Note transistor c114 diagram c113 transistor transistor c113 J107 DIODE VIPER53 application
hp laptop MOTHERBOARD pcb CIRCUIT diagram

Abstract: hp mini 110 laptop MOTHERBOARD pcb CIRCUIT diagram hp mini laptop MOTHERBOARD pcb CIRCUIT diagram digitizer wacom logitech c110 PA-1500-02 SU-001-01 AMBIT modem 4UF103450P hp laptop MOTHERBOARD pcb CIRCUIT diagram hp dv
Text: TravelMate C110 Service Guide Service guide files and updates are available on the CSD web; for more information, please refer to http://csd.acer.com.tw PART NO .: 49.46Z01.002 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Travelmate C110 service guide. Date Chapter Updates II TravelMate C110 Copyright Copyright © 2003 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed


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PDF 46Z01 hp laptop MOTHERBOARD pcb CIRCUIT diagram hp mini 110 laptop MOTHERBOARD pcb CIRCUIT diagram hp mini laptop MOTHERBOARD pcb CIRCUIT diagram digitizer wacom logitech c110 PA-1500-02 SU-001-01 AMBIT modem 4UF103450P hp laptop MOTHERBOARD pcb CIRCUIT diagram hp dv
p12n60c3

Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
Text: bipolar transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°C - - 1.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = > C110 . VGE = , Charge qg(ON) 'c = > C110 . vCE = 0.5 BVces VGE=15V - 48 55 nC Vqe = 20V - 62 71 nC Current Turn-On Delay Time ^d(ON)l Tj = 150°C, 'ce = > C110 , VcE(PK) - 0.8 BVces, Vqe = 15V, Rg = 25ÌÌ, L = 100nH - , were tested per JEDEC standard No . 24-1 Method for Measurement of Power Device Turn-Off Switching Loss


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PDF HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123
cctv camera circuit diagram

Abstract: transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic
Text: (15V) C111 C103 C110 VO3 (5V) C102 C109 C101 RBO VO1 (3.3V) C105 C108 , Component Description Type Value Composite type with a PNP transistor and schottky barrier , TANTALUM CAPACITOR 10uF/10V C110 Load capacitor for VHO TANTALUM CAPACITOR 10uF/20V C107 , Description Pin No . Name I/O Type 1 VO3 O A Voltage output for +5V general


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PDF ADT7210 ADT7210 28MLF, cctv camera circuit diagram transistor digital C103 transistor c111 c103 TRANSISTOR C111 transistor ccd cctv camera circuit diagram TRANSISTOR C103 12v and 5v regulated power supply circuit diagram C105 Diode partsnic
Not Available

Abstract: No abstract text available
Text: loss of a bipolar transistor . File Number • 75A, 1200V, T C = 25°C • 1200V Switching SOA , Current Ic e s VCE(SAT) VGE(TH) iGES VCE = BVC e s !c = > C110 . VGE = 15V lc = 250nA, V , 200|iH, = 1200V Gate to Em itter Plateau Voltage VGEP !c = > C110 . V CE = 0 5 b v CES On-State Gate Charge QG(ON) 2 hjA.rtmS !C = > C110 . Vc e = 0 5 b v c e s HGTG30N120CN , 26 ns - 220 260 ns - 180 240 ns - Ic e = > C110 VC e = 0.8 BV c e s


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PDF HGTG30N120CN HGTG30N120CN 350ns 1-800-4-HARRIS
G7N60C3

Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
Text: bipolar transistor . The much lower on-state voltage drop varies only moderately between 25°C and 150 , Vce = BVces Tc = 150°c - - 2.0 mA Collector to Emitter Saturation Voltage VCE(SAT) 'c = > C110 . vGE , ) 'c = > C110 . vCE = 0.5 BVces vGE = 15V - 23 30 nC VGE = 20V - 30 38 nC 2 interrii HGTD7N60C3S , TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time ^d(ON)l tj = 150°C lCE= > C110 VCE(PK) = , ). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No . 24-1 Method for Measurement of


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PDF HGTD7N60C3S HGTP7N60C3 TA49115. HGTD7N60C3S, HGTP7N60C3 G7N60C3 g7n60c G7N60 TA49115 HGTD7N60C3S9A LD26 RHRD660
G3N60C

Abstract: C110 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 TB334
Text: of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower on-state , > C110 . VGE = 15V Tc = 25°C - 1.65 2.0 V Tc = 150°C - 1.85 2.2 V Gate to Emitter Threshold Voltage , On-State Gate Charge Qg(ON) 'c = ' C110 . vCE = 0.5 BVces VGE = 15V - 10.8 13.5 nC Vge = 20V - 13.8 17.3 nC Current Turn-On Delay Time td(ON)l Tj = 150°C 'CE = > C110 VCE(PK) = 08 bvCES Vge=15V Rg = 82Q L , HGTP3N60C3 and HGTD3N60C3S were tested per JEDEC standard No . 24-1 Method for Measurement of Power Device


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PDF HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 TA49113. G3N60C C110 HGTD3N60C3S9A TB334
G30N60

Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 C110 HGTG30N60B3D
Text: impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower on-state , 250 HA Tc = 150°C - - 3 mA Collector to Emitter Saturation Voltage vce(sat) 'c = ' C110 . VGE , A Gate to Emitter Plateau Voltage vgep 'c = ' c110 . vce = 05 bvces - 7.2 - V On-State Gate Charge qg(ON) 'c = > C110 . vCE = 0.5 BVces Vqe= 15V - 170 190 nC Vqe = 20V - 230 250 nC Current Turn-On Delay Time ^d(ON)l IGBT and Diode at Tj = 25°C, 'ce = > c110 . vce = 0.8 BVces. Vqe = 15V, Rq = 3ÌÌ, L


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PDF HGTG30N60B3D HGTG30N60B3D TA49170. TA49053. G30N60 TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 C110
relay 12v 1c/o

Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET HGT1S20N60C3S G20N60C
Text: have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor , = 150°C - - 5.0 mA Collector to Emitter Saturation Voltage vce(sat) 'c = > C110 VGE = 15V Tc = 25 , Emitter Plateau Voltage vgep 'ce = ' c110 . vce = 0 5 bvces - 8.4 - V On-State Gate Charge qg(ON) lCE= ' c110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C 'ce = > c110 VCE = 0.8 BVces Vge = 15V Rg = 10il L - 1mH Test Circuit


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PDF TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET HGT1S20N60C3S G20N60C
B560 transistor

Abstract: WL11-B560 PL40A transistor b560 WL11- B560 PL80A Transistor No C110 transistor C110 Reflective Tape b560
Text: Vss3) Power consumption 30 mA4) Switching outputs Transistor outputs Qp and Qn , Scanning range, max. typical Reflector type Operating range 1 2 PL80A C110 0 . 3.5 m 0 , 1 (m) 1 2 3 4 5 Order information Type Order No . WL11-B560 05-08-2006


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PDF WL11-B560 PL80A PL50A PL40A PL30A PL20A B560 transistor WL11-B560 PL40A transistor b560 WL11- B560 PL80A Transistor No C110 transistor C110 Reflective Tape b560
g20n60c3d

Abstract: Transistor No C110 g20n60c3d equivalent G20N60C LG 631 IC TA49178 transistor C110 HGTG20N60C3D TA49063 TA49179
Text: on-state conduction loss of a bipolar transistor . The much lower on-state voltage drop varies only , Voltage VCE(SAT) 'c = ' C110 VGE = 15V Tc = 25°C - 1.4 1.8 V Tc = 150°C - 1.5 1.9 V Gate to Emitter , VCe = 600V 20 - - A Gate to Emitter Plateau Voltage VGEP 'CE = ' C110 . VCE = 05 bvCES - 8.4 - V On-State Gate Charge Qg(ON) 'CE = > C110 vCE = 0.5 BVces VGE = 15V - 91 110 nC Vqe = 20V - 122 145 nC Current Turn-On Delay Time td(ON)l IGBT and Diode at Tj = 25°C 'CE = > C110 vCE = 0.8 BVces Vge = 15V Rg =


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PDF HGTG20N60C3D HGTG20N60C3D TA49178. RHRP3060 TA49063) g20n60c3d Transistor No C110 g20n60c3d equivalent G20N60C LG 631 IC TA49178 transistor C110 TA49063 TA49179
Not Available

Abstract: No abstract text available
Text: conduction loss of a bipolar transistor . F ile N u m b er • 72A, 1200V, T C = 25°C • 1200V , > C110 . Vc e = 0 8 b v c e s . Vg e = 15V, Rq = 3 Cl, L = 1mH, Test Circuit (Figure 18) - 20 25 ns - 195 240 ns - 80 120 ns VC e = BVc e s !c = > C110 . VGE = 15V , 200|iH, = 1200V Gate to Emitter Plateau Voltage VGEP !c = > C110 . VCE = 0-5 BVc e s , Current Turn-Off Delay Time td(OFF)l Current Fall Time tfl !C = > C110 . V c e = 0.5 BVq e S


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PDF HGTG27N120BN HGTG27N120BN 140ns 1-800-4-HARRIS
p12n60c3

Abstract: S12N60C3
Text: impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower , G ate-Em itter Threshold Voltage 'c e s VCE(SAT) VGE(TH) = BV c e s !C = > C110 . V q , > c iio . v ce = 0-5 BV c e s !C = > C110 . V c e = 0.5 BV c e s Vq T j = 150°C, !c E = > C110 , v c e ( p k ) = 0 8 BV c e s , V q e = 15V, R q - 2 5 ÌÌ, L = 1 00nH e NOTE: 3 , (I c e = OA). The HG TP12N60C3, HGT1S12N60C3 and HG T1S12N60C3S were tested per JEDEC standard No


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PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3
ha13559

Abstract: C103Z HA13559FP 13559FP
Text: Boostout L 13 290 HA13559FP Block Diagram 291 H A 13559FP Pin Assignment Pin No . 1 2 3 4 5 , HA13559FP Application V SS I R107 Powgood Veti > 1 C110 26 25 24 'r r 23 22 C109 R106 2 , characteristics table. 295 H A 13559F P External Components Part No . R101,R102 R103, R104 R105, R106 R107 , C103, C104 C106 C107.C108 C109 C110 C112 D101 Purpose Power amplifier output stabilization LVI , V to 13.8 V 2. ASO of each output transistor is shown below. Operating locus must be within the ASO


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PDF HA13559FP HA13559FP ha13559 C103Z 13559FP
Not Available

Abstract: No abstract text available
Text: impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor . The much lower , . ! C110 7 Average Rectified Forward Current at T c = 1 5 2 ° C . , > C110 . VC E - 0 8 b v CES, V q e = 15V, Rg = 50£1, L = 2mH, Test Circuit (Figure 19) - 21 - , !c = > C110 . VGE = 15V lc = 250nA, V q e = VGE = ±20V T j = 150°C, Rq = 50£2, VG E = 15V, L = 100nH 'c = > c iio . v ce = 0-5 BV c e s 'c = > C110 . V CE 5BV c e s 2 HGTP7N60B3D


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PDF HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D TA49190. RHRD660 TA49057) 1-800-4-HARRIS
2N6261

Abstract: No abstract text available
Text: MEDIUM VOLTAGE CH IP N UM BER [ ^ © » © T ©ATTM.©' -Jiolitron Devices. Inc NPN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 06) CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that: a) th e chip b e a ssem b led in a reducing g a s atm osphere. .HO" (2.79mm) b) passiv atio n b e perform ed with a su , rate d to 25W (40V. 0.625A for 1 sec.) 2N6260, 2N6261. 2N6263 C-110 vBE(sat) -


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PDF 2N3054, 2N3441, 2N6260, 2N6261. 2N6263 C-110 2N6261
murata CFW455e

Abstract: cfw455e murata filter cfW 455 H CFW-455E 470KE CFW455 CFW 455E ha-12442 TOKO 455E ha-12441
Text: Symbol Test Condition Min Typ Max Unit Quiescent Current Squelch OFF Icc (I) no input — 4.2 5.4 mA Squelch ON Icc (2) no input — 4.6 6.3 mA Limiting Sensitivity Vin (lim) at the point of-3 dB Vo (AF) â , =3.3kQ Ä!oi = 6.8kQ 0 HITACHI 197 H A12441V External Parts X-tal Oscillator— NIHON DENPATYPE NO . NC18C Cera mie Filter — MURATA TYPE NO . CFW-455E Detector Coil — TOKO (TRIAL PRODUCT) NO . 7MC-101000Z0 Co = , . Influence Part No . Recommended Function Greater than Smaller than Value Recommended Value Recommended


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PDF A12441V HA12441V HA12442V HA12441V murata CFW455e cfw455e murata filter cfW 455 H CFW-455E 470KE CFW455 CFW 455E ha-12442 TOKO 455E ha-12441
Supplyframe Tracking Pixel