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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

Transistor KU 607 VC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Transistor KU 607 VC

Abstract: KU 607 VC BA9702FS
Text: Typical 520 Max Unit kHz Conditions Rt = 10 k ii, C t = 120 pF Rt = 10 kU , C t = 120 pF, Vc c , (Units : mm) BA9702FS (SSOP-A24) · · Applications · Standard & Memory ICs noH m 607 , , = 10 k£2, C ,= 120 pF Rt = lO k ii, C t = 120 pF R, = lO k ii R, = 10 kU 7 5 4 1.28 1.92 0.76 80 , required because the control transistor operates as a switch. However, proper caution applied to the


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PDF BA9702FS BA9702FS SSOP-A24 SSOP-A24) RCR-110D Transistor KU 607 VC KU 607 VC
Transistor KU 607 VC

Abstract: KU 607 VC M 607 Transistor KU 607
Text: and audio signals, and two w id e -b a n d 6dB amplifiers. By simply addi ng transistor buffers to the outputs, it is pos sible to construct a record/playback switch for two record/playback VC R s, and three , , T H D = 0 .5 % f= 1 MHz, V in = Gv CT CTM Gf ZlN V th dB dB dB dB V 1 V in = in = , circuit Vcc Vcc Fig 1 m m m 607 Video/Audio switch For Video f=4.43M H z, V 1


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PDF BA7626/BA7626F 7626F 10MHz 10mVp-p. Transistor KU 607 VC KU 607 VC M 607 Transistor KU 607
Not Available

Abstract: No abstract text available
Text: , V B = 0.5 V, R|_ = 1.0 k ii) MUN5130T1 ( V c c = 5.0 V, V B = 0.050 V, R l = 1 -0 kU ) ( VC C = 5.0 V , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias R esistor Transistor ) contains a single transistor with a m onolithic bias network consisting of two resistors; a series base


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PDF -70/SO T-323 MUN5111T1 MUN5114T1
MUM2211T1

Abstract: marking 8A 2216t
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor ) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , NPN SILICON BIAS RESISTOR TRANSISTOR · MAXIMUM RATINGS (T^ = 25°C unless otherwise noted) Rating


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PDF SC-59 MUN2211T1 MUM2211T1 marking 8A 2216t
57GHz

Abstract: Transistor KU 607 9484 transistor 2SC5228 marking 9365
Text: Ordering number:EN 5035 I No.5035 ¡I 2SC5228 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features - Low noise : NF = l.OdB typ (f= 1GHz). • High gain : I S21e I 2= 13.5dB typ (f = 1GHz). • High cutoff frequency : fr = 7GHz typ. Absolute Maximum Ratings at , ku , TOKYO, 110 JAPAN i 13095YK (KOTO) TA-0157 No.5035-1/4 2SC5228 w b. JC C '3 O D Q O Q hFE ~ lc , 2.517 55.1 0.152 53.2 0.348 - 60.7 2000 0.402 152.6 2.298 49.9 0.166 52.1 0.345 -64.5 VCE = 5 V, Ic =


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PDF 2SC5228 57GHz Transistor KU 607 9484 transistor marking 9365
D 400 F 6 F BIPOLAR TRANSISTOR

Abstract: No abstract text available
Text: 100 *C Tm b = 25 "C Tm b = 25 °C; tp < 10 ms; VC E < 15 V 1 k Q < R G< 10 kU Tm b -= 25 C; lc = 10 A , Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866 , logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount , W "C 'C VC E ±VG E lc lc lew IcLM Ecers Ecerr Eecr Ptet T "stg Ti " * - 300 125 5 125 150 150 -55 -40 ESD LIMITING VALUE SYMBOL Vc PARAMETER Electrostatic discharge capacitor


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PDF BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR
Not Available

Abstract: No abstract text available
Text: Transistor SBD : Schottky Barrier Diode I DC/DC Converter Applications F e a tu re s - Composite type with 2 devices (PNP transistor and Schottky barrier diode) contained in one package, facilitating , okyo Bldg., 1-10,1 C hôm e, Ucno, T aito - ku ,T O K Y O , 110 JA P A N 53094TH (KOTO) A8-9345 No , = - 4 0 V ,I e = 0 VEB= - 3 V ,I c = 0 Vc e -" 2V,Iq = -100mA Vqe - -2 V ,Ic- -1-5A Vc e = -2V , 5500 I O O mF trr VBE=5V Vc C=" 25V -5 V - 2 0 l B i = E O l B 2 = I C = - B OOmA No


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PDF FP104 FP104 2SA1729 SB05-05CP
Z7156

Abstract: mc34060ad 5.1 power amplifier circuit diagram
Text: Uncommitted Output Transistor Rated to 200 mA Source or Sink · Undervoltage Lockout M C34060A M C33060A , o +125 Unit V V mA V mW :C Q C Q C Vc 'c Vin PD Tj Tstg tA 0 to +70 -4 0 to +85 , 15 30 47 0.001 25 - Vc ·c Vin *fb 'ref Rt Ct *osc - kHz V ELECTRICAL CHARACTERISTICS (V q c , Offset Voltage (V0[Pin 3] - 2.5 V) Input Offset Current ( Vc [Pin 3] = 2 5 v ) Input Bias current (v O[Pin , V 95 - V Open-Loop Voltage Gain (AVq = 3-0 V, V q = 0.5 V to 3.5 V, R|_ - 2.0 kU


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PDF MC34060A MC33060A C34060A C33060A Z7156, Z7157, Z7156 mc34060ad 5.1 power amplifier circuit diagram
c38 transistor

Abstract: 2160 transistor Johanson Piston Trimmer
Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 , ( Vc c = 26 Vdc, lCQ = 150 mA, f = 2.2 GHz) Collector Efficiency ( Vc c = 26 Vdc, P o u t = 70 W, lCQ = , NPN RF Transistor 0.25X 2GHz Microstrip 50 £2 ¿15, < '16 f 17, i'18 ¿'19, (20 0.085X 2GHz , , AlliedSignal 10 Placement Diagram (not to scale) 10-20 ERICSSON ^ PTB 20235 .nil fia. upa


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PDF BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer
Not Available

Abstract: No abstract text available
Text: allow for either AC or DC input circuits and single transistor or Darlington transistor outputs , ) Current Transfer Ratio lL E D =6mA, VC E =0.5V 8(lL E D =0.5mA, VC E =0.8V) Output Capacitance @ 50V, f , Current lc=2mA, VC E =0.5V c(lc=20mA, VC E =0.8V) Input Voltage Drop VF@ 5mA Typ Max Min Typ Max Input , ic a l C o m p o n e n t V a lu e s Rt C 2500 U 50 nF 24 KU 5 V o lts 4.7 V o lts Rl I J =1= C


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PDF
Not Available

Abstract: No abstract text available
Text: -RN6006 V£C IIM3H 03 -U R 04 2SA1314 $ IN1H (16> OLITI O UT2 x m u - , 1 Q = 1A, Iß = 25mA lç = 2Af Iß = 50mA lF = 300mA Vce V Cc VC e VcE = 2V, lC = 0.5A = 10V = 2V, lc = , (sat) v C t (sat) V CE (sat) V CE (sat) V vF fr 'OL VßE r BE V MHz V 1998 02-26 3/6 , ? TRANSISTOR (RN5006) COLLECTOR CURRENT lc (mA) COLLECTOR CURRENT lc (mA) COLLECTOR , Q4 TRANSISTOR (2SA1314) VCE(sat) - IC - 0.01 -0 .0 1 -0 .0 3 -0 .1 -0 .3 -1


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PDF TD62M3704F TD62M3704F 2SA1357 RN5006-Fiy-wheeiing RN6006-Fly-wheeling 2SA1314 2SC3420 SSOP16 2SA1357
Not Available

Abstract: No abstract text available
Text: B ’ -K'. ' C - c r e . Tcwo- ku . TOKYO. 110-8Ò3-J JAPAN 7 ,n 7 0 7 b GG2ET77 545 , CM 'cc3 Output Idle current 8 VC “ VCREF VC “ VCREF 0 V C = V CREF mA 150 , l0 = 0.5A, Vœ 1 = 5V, Vcc2 = Vc c 3 = 12V 0.3 V VOU2 l0 = -0.5A, Vc c 1 = V cc3 = 5V. Vcc 2 - 12V 0.3 V VOD2 l0 = 0.5A, Vc c 1 = Vcc3 = 5V, Vcc 2 = 12V 0.3 V VCL1 , Vcc1 HA -30 pA [Control] Vc pin input current V C r e f P in input current Voltage


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PDF LB11997H 11997H 3234-HSOP28H-C LB11997H]
dm7117

Abstract: MC3456L burst generator MC3456 astable clock generator C3456 MC3456P
Text: Current Figure 6. High Output Voltage 5.0 Vt (min)- MINIMUM TRIGGER VOLTAGE Vc c , SUPPLY VOLTAGE , transistor is turned "on" and prevents the capacitor from charging. W hile the reset voltage is applied the , used for the tim ing network. Both the threshold terminal and the discharge transistor term inal are , . This turns the capacitor discharge transistor "off" and drives the digital output to the high state , B -C h a n n e l (ra = io ku c = 0.01 ^ f ; r l = 1.0 ku V c c = 15 v) Figure 17


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PDF b3b72S3 DQfl71tib MC3456 MC3456 dm7117 MC3456L burst generator astable clock generator C3456 MC3456P
MC33077

Abstract: 33077D
Text: loop voltage gain and low supply current drain. The all NPN transistor output stage exhibits no , AC ELECTRICAL CHARACTERISTICS ( Vc c = +15 V, V e e = - 1 5 V, T a = 25 C, unless otherwise noted.) Characteristics Slew Rate (Vjn = - 1 0 V to +10 V, R|_ = 2.0 ku , C L = 100 pF. Av = +1.0) Gain Bandwidth Product , (Open Loop) Gain Margin (R|_ = 2 .0 ku , C l = 10 pF) Phase Margin (R|_ = 2.0 k u C|_ = 10 pF) Symbol , 2.0 k ii. V o = 10 V pp) Power Bandwidth (V o = 27p_p, R[_ = 2.0 ku , T H D < 1%) Distortion (R|_ = 2.0


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PDF MC33077 MC33077 33077D
Not Available

Abstract: No abstract text available
Text: €˜ 0. 1 C h c m e U e n o . Ta ito - ku . T O K Y O . 1 1 0 - 8 5 3 4 J A P A N 7*H7Q7k 0 0 2 2 ^ 3 , V 4 to 13.6 V Note: When boost-up voltage is used at Vc c 2, output can be set to , , Vc c 1 - Vnc3 - 5V, Mr r 2 - 12V 0.3 V VOD2 lQ - 0.5A, Vcc1 - Vcc3 = 5V, Vœ 2 - 12V , 's /s i V ^ s -O V V 200 V& s-S V l*A -30 HA [Control] Vc pin input current Vcrff P*n input current Voltage gain Startup voltage Startup voltage width ' vc 'VCREF VC - V


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PDF EN6112 3227-HSOP24 LB11995] HSOP24 0Da30Gl
diagram transistor tt 2206

Abstract: equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor M1203-A murata crystal filter AM 455
Text: MC13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone , CAR Det RSSI DS Hold Data Out DS Gnd DS In Demod Quad Coil VC C 2 Limiter IF , mVrms Vin DC ELECTRICAL CHARACTERISTICS (TA = 25 C, VC C 1 = VC C 2 = 0, no input signal.) C , .) Characteristic IF AM PLIFIER SECTION Input Impedance 5 1,4 ku Pin Sym bol Min Typ Max Unit O utput Impedance , 330 1 2 . Local Oscillator The on-chip transistor operates with crystal and LC reso nant elements up


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PDF MC13156 MC13156DW 13156DW diagram transistor tt 2206 equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor M1203-A murata crystal filter AM 455
Not Available

Abstract: No abstract text available
Text: transistor BFQ67W Table 17 Common emitter scattering parameters, lc = 10 mA; VC = 8 V E S1 1 f , GHz wideband transistor BFQ67W Table 19 Common emitter scattering parameters, lc = 15 mA; VC = 8 , wideband transistor Table 23 Common emitter scattering parameters, lc = 30 mA; VC = 8 V E S1 1 f , wideband transistor FEATURES PINNING Product specification b?E D BFQ67W PIN CONFIGURATION , .1 SOT323. NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such


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PDF bb53T31 BFQ67W OT323 UBC870 OT323. OT323
CA3183

Abstract: AN5296 application note ca3146 AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183
Text: Transistor Arrays Description The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a com mon monolithic substrate. Types CA3146A and CA3146 consist of five , transistors with independent connections for each transistor In addition two of these transistors (Q i and Q 2 , , see companion Application Note AN5296 "Application of the CA3018 Integrated Circuit Transistor Array , (Any One Transistor , Note 3) CA3146A, CA3146


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PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 CA3146A CA3146 AN5296 application note AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183
CA3045

Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Text: rp H A R R IS S E M I C O N D U C T O R CA3045, CA3046 General Purpose N-P-N Transistor , Compensated Amplifiers · See Application Note, AN5296 "Application of the CA301B Iniegrated-Circult Transistor , ) . 50mA Power Dissipation CA3045 Each Transistor Total Pkg. Up to TA = , Each Transistor Total Pkg. Up to Ta = +55°C. 300mW 750mW Above Ta = , specification is not implied. Electrical Specifications Ta = +25°C, Characteristics apply for each transistor


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PDF CA3045, CA3046 CA3046 CA3045 CA3046 equivalent ca301b Harris CA3046 CA3046M
FERROXCUBE 4330

Abstract: BGY114D BGY114E FERROXCUBE 4330-030 HB 100B MSM88 uhf amplifier
Text: modules in a SOT278A package. Each module consists of 5 NPN silicon planar transistor dies mounted , PIN DESCRIPTION 1 RF input 2 Vai 3 Vc 4 Vs2 5 RF output Flange ground II 12 13 14 |S Top View , ). SYMBOL PARAMETER MIN. MAX. UNIT Vsi DC supply voltage - 9 V Vs2 DC supply voltage - 16 V VC DC , = ZL = 50 ft; PD = 1 mW; VSi = 8 V; VS2 = 12.5 V; Vc £ 8 V; Tmt, = 25 °C; unless otherwise , MHz MHz Iq3 leakage current VSi = Vc = 0; PD = 0 - - 1 mA Pl load power 6 - - W Gp power gain


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PDF BGY114D; BGY114E BGY114D BGY114E OT278A OT278A MSA488 MBD357 FERROXCUBE 4330 FERROXCUBE 4330-030 HB 100B MSM88 uhf amplifier
TRANSISTOR ML6

Abstract: No abstract text available
Text: wideband transistor ^ BFQ270 N FEATURES AUER PHILIPS/DISCRETE h^Z T > PINNING PIN â , emitter 4 t s \ , 3 ) 1. . DESCRIPTION Silicon NPN transistor mounted in a , power dissipation up to Tc = 100 °C - - 10 hF E DC current gain lc = 240 mA; VC =18V ; Ti = 25 °C E 60 *r lc = 240 mA; VC = 18 V; f = 1 GHz; E Tmb= 2 5 °C “ 6 , ^31 0031773 10b H A P X Philips Semiconductors Product specification NPN 6 GHz wideband transistor


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PDF bb53T31 BFQ270 OT172A1 TRANSISTOR ML6
Not Available

Abstract: No abstract text available
Text: Transistor Device Data MJ21195MJ21196 TYPICAL CHARACTERISTICS NPN MJ21196 lC, COLLECTOR CURRENT (AMPS , MJ21195 NPN MJ21196 Vc e , COLLECTOR-EMITTER VOLTAGE (VOLTS) Vc e , COLLECTOR-EMITTER VOLTAGE , Bipolar Power Transistor Device Data 3 MJ21195 MJ21196 TYPICAL CHARACTERISTICS NPN MJ21196 lC , . Safe operating area curves indicate Iq - V q e limits of the transistor that must be observed for , 4 100 lC, COLLECTOR CURRENT (AMPS) Motorola Bipolar Power Transistor Device Data C


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PDF MJ21195/D J21195* J21196* J21195 J21196
Not Available

Abstract: No abstract text available
Text: PQtm GEC P L E S S E Y ADVANCE INFORMATION D S3627 • 1 .3 SL3145 1,6GHz NPN TRANSISTOR , . collector current | VC « 2V, U200MHz) j S 75 SL3145 ELECTRICAL CHARACTERISTICS These , 15 volt Vci = 2 0 volt Ic - 20 mA 76 Maximum individual transistor dissipation 200 mWatt , is being dissipated in one transistor , these thermal resistance figures should be increased by 100 , 77 SL3145 tOOxA 1 Ku * _ 1 _ _ IM » < ta n COLLECTOR CURRENT Fig.5 DC


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PDF S3627 SL3145 SL3145 CA3046. 200MHz)
Not Available

Abstract: No abstract text available
Text: Ordering number: EN 3173A Monolithic Digital IC N0.3173A LB1740 8-Channel, Current-Source Output, Darlington Transistor Array The LB 1740 is an 8-channel current source output D arlington transistor array made up of PN P tran sisto rs and NPN transistors. High output drive capability , n d itio n s a t Ta = 25°C Supply Voltage vC c Input ON-level Voltage Vion ÍOÜT- -350mA Input , Tokyo Bldg., 1-10,1 Chôme, Ueno, T aito - ku , TOKYO, 110 JA P A N N2195YK/ N149TA,TS N o.3173-1/2


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PDF LB1740 500mA)
y1 npn

Abstract: 538 NPN transistor
Text: transistor BF547 MBB409 e F (dB) 6 4 2 10_1 1 1c (mA) 1° 2 (mil l VC = 10 , -— NPN 1 GHz wideband transistor BF547 Table 7 Common base scattering parameters, VC = 10 V , specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable , transistor in a plastic SOT23 envelope. It is intended for VHF and UHF TV-tuner applications and can be , N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor Product specification b7E D BF547


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PDF bbS3R31 0Q2Mb37 BF547 BF547 y1 npn 538 NPN transistor
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