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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor J438 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Transistor J438

Abstract: j438 2SJ438 J438 3
Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution , µC Marking J438 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free


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PDF 2SJ438 Transistor J438 j438 2SJ438 J438 3
2007 - Transistor J438

Abstract: J438 2SJ438
Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor , C IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR / dt = 50 A / s Marking J438 Part No


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PDF 2SJ438 Transistor J438 J438 2SJ438
2006 - Transistor J438

Abstract: j438 J438 3 2SJ438
Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications z 4-V gate drive z Low drain-source ON resistance z High forward transfer admittance z Enhancement mode : RDS (ON) = 0.16 (typ.) : |Yfs| = 4.0 S (typ , channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 , - - Unit A A V ns µC Marking J438 Part No. (or abbreviation code) Lot No. A line


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PDF 2SJ438 Transistor J438 j438 J438 3 2SJ438
2009 - Transistor J438

Abstract: j438 2SJ438
Text: 2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , -5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor , C IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR / dt = 50 A / s Marking J438 Note 4


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PDF 2SJ438 Transistor J438 j438 2SJ438
2008 - CRCW08051001FKEA

Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
Text: . LIFETIME BUY LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor CASE 360B-05 , Transistor , SOT-23, On-Semi #BC847ALT1G PCB Rogers RO4350, 0.5 mm, r = 3.53 MRF21010LR1 4 RF , Zload 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230


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PDF MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
2003 - 100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Text: Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor , SOT , V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource 2.85 ­ j4.38 2.89 ­ j5.04 2.73 ­ j6


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PDF MRF21010R1 MRF21010LSR1 MRF21010LSR1 100B0R5BW 100B102JW Transistor J438 100B5R6BW MRF21010
2002 - Transistor J438

Abstract: MRF21010 100B102JW
Text: Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor , SOT , P1dB (CW) f MHz 1990 2110 2230 Zin Zin 2.85 + j4.38 2.89 + j5.04 2.73 + j6.19 ZOL* 2.93 + j1.71 2.76


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PDF MRF21010 MRF21010S Transistor J438 100B102JW
2008 - atc100B100GT500XT

Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier , Voltage Regulator, Micro - 8, On - Semi #LP2951ACDMR2G T2 Bipolar NPN Transistor , SOT - 23, On - , f MHz Zload Zsource 1990 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5


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PDF MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
2008 - CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier , Regulator, Micro-8, On-Semi #LP2951ACDMR2G Bipolar NPN Transistor , SOT-23, On-Semi #BC847ALT1G Rogers , 1990 2110 2230 Zsource 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - j2


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PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010
2008 - CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 atc100B100GT500XT NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor pd cms ATC100B0R5BT500XT MRF21010
Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier , -8, On-Semi #LP2951ACDMR2G T2 Bipolar NPN Transistor , SOT-23, On-Semi #BC847ALT1G PCB Rogers , 2.85 - j4.38 2.93 - j1.71 2110 2.89 - j5.04 2.76 - j2.28 2230 2.73 - j6


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PDF MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 atc100B100GT500XT NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor pd cms ATC100B0R5BT500XT MRF21010
2008 - NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Text: 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor LIFETIME BUY Table 4. Electrical , #3224W Voltage Regulator, Micro-8, On-Semi #LP2951ACDMR2G Bipolar NPN Transistor , SOT-23, On-Semi , MHz VDD = 28 V, IDQ = 100 mA, Pout = 10 W PEP f MHz 1990 2110 2230 Zsource 2.85 - j4.38 2.89 -


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PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010
2002 - MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Text: , Bourns #3224W T1 Voltage Regulator, Micro­8, Motorola #LP2951 T2 Bipolar NPN Transistor , SOT , , Pout = P1dB CW f MHz ZOL* Zin 1990 2.85 + j4.38 2.93 + j1.71 2110 2.89 + j5


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PDF MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B
2007 - 10ACPR

Abstract: No abstract text available
Text: #3224W Voltage Regulator, Micro - 8, #LP2951 Bipolar NPN Transistor , SOT - 23, #BC847 Rogers RO4350, 0.5 , 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test


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PDF MRF21010LR1 MRF21010LSR1 10ACPR
2003 - MRF21010

Abstract: No abstract text available
Text: #3224W Voltage Regulator, Micro - 8, Motorola #LP2951 Bipolar NPN Transistor , SOT - 23, Motorola #BC847 , P1dB CW f MHz 1990 2110 2230 Zsource 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload 2.93 - j1.71 2.76 -


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PDF MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010
2001 - MRF21010

Abstract: No abstract text available
Text: Multi­Turn, Bourns #3224W Voltage Regulator, Micro­8, Motorola #LP2951 Bipolar NPN Transistor , SOT , Zo = 10 VDD = 28 V, IDQ = 100 mA, Pout = P1dB (CW) f MHz 1990 2110 2230 Zin Zin 2.85 + j4.38


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PDF MRF21010/D MRF21010 MRF21010S MRF21010S
2002 - MRF21010

Abstract: No abstract text available
Text: ­8, Motorola #LP2951 Bipolar NPN Transistor , SOT­23, Motorola #BC847 Rogers RO4350, 0.5 mm, r = 3.53 , Zo = 10 VDD = 28 V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource 2.85 + j4.38 2.89


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PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010
2002 - MRF21010

Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Text: #LP2951 T2 Bipolar NPN Transistor , SOT­23, Motorola #BC847 RF Connectors Type SMA, Johnson , 2.85 + j4.38 2.93 + j1.71 2110 2.89 + j5.04 2.76 + j2.28 2230 2.73 + j6.19 2.83 +


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PDF MRF21010/D MRF21010 MRF21010S MRF21010 100B102JW 293D106X9035D2T MRF21010S NI-360
2001 - j438

Abstract: MRF21010
Text: #LP2951 Bipolar NPN Transistor , SOT­23, Motorola #BC847 RF Connectors Type SMA, Johnson #142­0701­631 , 1990 2110 2230 Zin Zin 2.85 + j4.38 2.89 + j5.04 2.73 + j6.19 ZOL* 2.93 + j1.71 2.76 + j2.28 2.83 +


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PDF MRF21010/D MRF21010 MRF21010S j438
2003 - MRF21010R1

Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Text: , Bourns #3224W T1 Voltage Regulator, Micro­8, Motorola #LP2951 T2 Bipolar NPN Transistor , SOT , 1990 2.85 ­ j4.38 2.93 ­ j1.71 2110 2.89 ­ j5.04 2.76 ­ j2.28 2230 2.73 ­ j6


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PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW
2001 - zener z1

Abstract: 12 volt zener diode 10 watts j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 , Zin 4.72 + j4.38 4.88 +j6.34 3.22 +j5.24 ZOL* 12.57 +j1.88 11.21 +j5.87 9.82 +j8.63 VDD = 12.5 V , , N­Channel enhancement mode, Lateral Metal­Oxide Semiconductor Field­Effect Transistor (MOSFET). Motorola , Transistor " for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used


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PDF MRF1513T1 AN215A, zener z1 12 volt zener diode 10 watts j718
2002 - j494 transistor

Abstract: MOSFET j538 j718 J494
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial , 4.72 + j4.38 4.88 +j6.34 3.22 +j5.24 ZOL* 12.57 +j1.88 11.21 +j5.87 9.82 +j8.63 VDD = 12.5 V, IDQ = , mode, Lateral Metal­Oxide Semiconductor Field­Effect Transistor (MOSFET). Motorola Application Note , Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor " for additional


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PDF MRF1513T1 AN215A, j494 transistor MOSFET j538 j718 J494
2009 - cgh40006p

Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
Text: CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 006P , + j11.68 5000 4.42 - j25.8 9.78 + j4.85 6000 7.1 - j42.7 9.96 - j4.38 Note 1


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PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
2003 - MOSFET j538

Abstract: j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial , 440 470 Zin 4.72 + j4.38 4.88 +j6.34 3.22 +j5.24 ZOL* 12.57 +j1.88 11.21 +j5.87 9.82 +j8.63 VDD = , Field­Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested , Power Leadless Surface Mount Transistor " for additional information. AMPLIFIER DESIGN Impedance matching


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PDF MRF1513T1 AN215A, MOSFET j538 j718
2009 - Not Available

Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high , amplifier circuits. The transistor is available in a Package Type s: 440109 PN’s: CGH40 006P , .8 9.78 + j4.85 6000 7.1 - j42.7 9.96 - j4.38 Note 1. VDD = 28V, IDQ = 100mA in the 440109


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PDF CGH40006P CGH40006P CGH40006P, CGH40
2009 - Not Available

Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high , amplifier circuits. The transistor is available in a Package Type s: 440109 PN’s: CGH40 006P , .8 9.78 + j4.85 6000 7.1 - j42.7 9.96 - j4.38 Note 1. VDD = 28V, IDQ = 100mA in the 440109


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PDF CGH40006P CGH40006P CGH40006P, CGH40
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