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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor J182 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - Transistor J182

Abstract: j182 j182 transistor J221 j182 ic j161 SN723 J160 MDS500L J1 TRANSISTOR
Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor . It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in , 1030 1090 1150 Zsource (ohms) 1.90 ­ j1.60 2.10 ­ j1.61 2.26 ­ j1.82 Zsource Zload (ohms


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PDF MDS500L MDS500L Transistor J182 j182 j182 transistor J221 j182 ic j161 SN723 J160 J1 TRANSISTOR
Transistor J182

Abstract: No abstract text available
Text: MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS500L is a high power COMMON BASE bipolar transistor . It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in , 1030 1090 1150 Zsource (ohms) 1.90 – j1.60 2.10 – j1.61 2.26 – j1.82 Zsource Zload


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PDF MDS500L MDS500L Transistor J182
2009 - Transistor J182

Abstract: transistor 6w j182 j182 transistor MAPRST1214-6UF
Text: MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features · · · · · · · · · NPN silicon , . MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM Products , 3.2 16.9 + j18.0 1.3 3.8 ­ j 3.4 14.2 + j16.4 1.4 3.4 ­ j 3.7 11.7 + j18.2 2 , ) or information contained herein without notice. MAPRST1214-6UF Radar Pulsed Power Transistor 6W


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PDF MAPRST1214-6UF Transistor J182 transistor 6w j182 j182 transistor MAPRST1214-6UF
2007 - Transistor J182

Abstract: j182 transistor
Text: MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Features · · · · · · · · · NPN silicon microwave power transistors Common base configuration Broadband Class C , notice. MAPRST1214-6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty M/A-COM , .4 11.7 + j18.2 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering , -6UF Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Test Fixture Circuit Dimensions M


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PDF MAPRST1214-6UF Transistor J182 j182 transistor
2007 - 1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v j182 capacitor 1000uf 63v capacitor 1000uF ADG419 470uf 16V tantalum 1030mhz
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband , - j1.66 2.87 - j1.79 2.56 - j1.82 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32µs


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PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 20Network 250mA, 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v j182 capacitor 1000uf 63v capacitor 1000uF ADG419 470uf 16V tantalum
Transistor J182

Abstract: No abstract text available
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband , - j1.66 2.87 - j1.79 2.56 - j1.82 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32µs


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PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 250mA, Transistor J182
2003 - Transistor J182

Abstract: No abstract text available
Text: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Electrical , Power Transistor Test Circuit Illustrations for AGR18090E FB1 VGG + Z12 C6 R2 C5 C4 C3 Z11 Z4 C2 Z6 , Inc. 3 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet


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PDF AGR18090E DS02-326RFPP Transistor J182
1999 - j196

Abstract: J464 SL-5020 Transistor J182
Text: Advance Data Sheet Product Description The SL-5020 is Stanford Microdevices' high-linearity 50W PEP LDMOS transistor designed for base station applications up to 2000 MHz. Rated for minimum peak envelope power of 50W, it is ideal for CDMA Single or Multi-Carrier Power Amplifiers in Class A or AB operation. Patented LDMOS Technology is used to achieve high performance and reliability at a low cost. Dual , .40 0.38 - j4.22 0.42 - j4.11 Z L o ad 1.10 - j1.82 1.08 - j1.79 1.14 - j1.83 1.16 - j1.96 1.14 - j2


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PDF SL-5020 SL-5020 SL-50201 40otal SL-50202 j196 J464 Transistor J182
1995 - w18 transistor

Abstract: No abstract text available
Text: processing to MIL-STD-883. D 0.131" (3.33mm) TRANSISTOR COUNT: 200 SUBSTRATE CONNECTED TO V+ DG529 , ) TRANSISTOR COUNT: 200 SUBSTRATE CONNECTED TO V+ 10 , : 21-0045A (PDF) Use pkgcode/variation: J18-2 * Ceramic DIP;18 pin;.300" Dwg: 21-0045A (PDF) Use pkgcode/variation: J18-2 * -55C to +125C RoHS/Lead-Free: No Materials Analysis -55C to +125C RoHS/Lead-Free: No


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PDF DG528/DG529 DG528 DG529 DG529CWN-T DG529CWN DG529CWN+ 21-0042B w18 transistor
2004 - J182 transistor

Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
Text: Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , , LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless , . Preliminary Data Sheet April 2004 90 W, 1.805 GHz- AGR18090E 1.880 GHz, LDMOS RF Power Transistor , AGR18090E 90 W, 1.805 GHz- Preliminary Data Sheet April 2004 1.880 GHz, LDMOS RF Power Transistor


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PDF AGR18090E AGR18090E DS04-157RFPP DS04-104RFPP) J182 transistor "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090EU C1812C105K5RACTR JESD22-C101A
2008 - Transistor J182

Abstract: 18-12 049 transistor TRANSISTOR Z10 j182 RF POWER TRANSISTOR JESD22-A114 C1812C105K5RACTR AGR18090EU AGR18090EF AGR18090E
Text: Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , observed. AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet , Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor , , LDMOS RF Power Transistor U CT IN D 0.48 90 0.1 0.49 170 10 0.4 GTH S TO


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PDF AGR18090E AGR18090E amplR21090U AGR18090EF AGR18090F M-AGR21090F 12-digit Transistor J182 18-12 049 transistor TRANSISTOR Z10 j182 RF POWER TRANSISTOR JESD22-A114 C1812C105K5RACTR AGR18090EU AGR18090EF
2004 - 100B100JW500X

Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A
Text: Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global , GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply , . Preliminary Data Sheet February 2004 90 W, 1.805 GHz- AGR18090E 1.880 GHz, LDMOS RF Power Transistor , Transistor U CT IN D 90 0.6 10 0.1 0.4 20 0.2 50 20 10 5.0 4.0 3.0


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PDF AGR18090E AGR18090E DS04-104RFPP DS04-033RFPP) 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A
2003 - Not Available

Abstract: No abstract text available
Text: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , Power Transistor Preliminary Data Sheet November 2003 Electrical Characteristics Recommended , November 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Test Circuit , Power Transistor Preliminary Data Sheet November 2003 Typical Performance Characteristics Z0 = 4


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PDF AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP)
AGR18090EF

Abstract: No abstract text available
Text: Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced , , LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Electrical Characteristics , Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor , -1.880 GHz, LDMOS RF Power Transistor Preliminary Data Sheet September 2003 Typical Performance


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PDF AGR18090E AGR18090EF
2007 - 100B220GW

Abstract: 100B100GW
Text: , 1/8 W Chip Resistor (0805) NPN Bipolar Transistor , SOT - 23, #BC847 Voltage Regulator, Micro - 8 , .65 1.88 + j2.45 1.79 + j2.40 1.47 + j1.82 1.58 + j1.52 Zsource = Test circuit impedance as measured


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PDF MRF9100R3 MRF9100SR3 100B220GW 100B100GW
j350 TRANSISTOR

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for , CW, 28 V INDUSTRIAL HEATING, RUGGED RF POWER LDMOS TRANSISTOR –10 2350 MHz MHT1006NT1 , the source terminal for the transistor . Figure 1. Pin Connections 1. All data measured in , Q1 RF Power LDMOS Transistor AFT27S010NT1 Freescale R1 4.75 , Chip Resistor , 1.00 - j1.60 1.04 + j1.82 3.21 + j3.00 20.8 40.0 10 61.1 –16 2600 0.985 -


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PDF MHT1006N MHT1006NT1 j350 TRANSISTOR
2003 - Transistor J182

Abstract: No abstract text available
Text: Transistor Introduction The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS , Transistor Preliminary Data Sheet July 2003 Electrical Characteristics Recommended operating , Sheet July 2003 AGR19060E 60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Test Circuit , Schematic Agere Systems Inc. 3 AGR19060E 60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor


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PDF AGR19060E Hz--1990 AGR19060EU AGR19060EF DS01-216RFPP Transistor J182
2002 - Transistor J182

Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Text: NPN Bipolar Transistor , SOT­23, Motorola #BC847 U1 Voltage Regulator, Micro­8, Motorola #LP2951 , .40 960 2.16 ­ j0.25 1.47 ­ j1.82 1000 2.62 ­ j0.25 1.58 ­ j1.52 Zin = Complex


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PDF MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA
2014 - Not Available

Abstract: No abstract text available
Text: LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed , ) 1.8–600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR D (%) 87.5-108 (1,3 , Power LDMOS Transistor MMRF1316NR1 Freescale R1 2.2 k, 1/8 W Chip Resistor , NPN Bipolar Transistor BC847ALT1G ON Semiconductor PCB Rogers RO4350B, 0.030, r = , j18.2 15.2 + j7.99 104 15.5 + j19.6 15.7 + j7.94 108 17.2 + j20.9 16.2 + j7


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PDF MMRF1316N MMRF1316NR1
2001 - zener z1

Abstract: 12 volt zener diode 10 watts j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 , , IDQ = 50 mA, Pout = 3 W f MHz 135 155 175 Zin ZOL* 16.55 + j1.82 22.01 +j10.32 15.59 +j5.38 15.55 , , N­Channel enhancement mode, Lateral Metal­Oxide Semiconductor Field­Effect Transistor (MOSFET). Motorola , Transistor " for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used


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PDF MRF1513T1 AN215A, zener z1 12 volt zener diode 10 watts j718
2002 - j494 transistor

Abstract: MOSFET j538 j718 J494
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial , 50 mA, Pout = 3 W f MHz 135 155 175 Zin ZOL* 16.55 + j1.82 22.01 +j10.32 15.59 +j5.38 15.55 , mode, Lateral Metal­Oxide Semiconductor Field­Effect Transistor (MOSFET). Motorola Application Note , Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor " for additional


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PDF MRF1513T1 AN215A, j494 transistor MOSFET j538 j718 J494
2003 - MOSFET j538

Abstract: j718
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial , 12.5 V, IDQ = 50 mA, Pout = 3 W f MHz 135 155 175 Zin ZOL* 16.55 + j1.82 22.01 +j10.32 15.59 +j5.38 , Field­Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested , Power Leadless Surface Mount Transistor " for additional information. AMPLIFIER DESIGN Impedance matching


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PDF MRF1513T1 AN215A, MOSFET j538 j718
2003 - Transistor J182

Abstract: j182 transistor motorola an721 application
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and , W f MHz 480 500 520 Zin 1.06 + j1.82 0.97 +j2.01 0.975 +j2.37 ZOL* 3.51 +j0.99 2.82 +j0.75 1.87 , Field­Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested , Power Leadless Surface Mount Transistor " for additional information. AMPLIFIER DESIGN Impedance matching


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PDF MRF1517T1 AN215A, Transistor J182 j182 transistor motorola an721 application
2002 - Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N­Channel Enhancement­Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and , , IDQ = 150 mA, Pout = 8 W f MHz 480 500 520 Zin 1.06 + j1.82 0.97 +j2.01 0.975 +j2.37 ZOL* 3.51 +j0.99 , Field­Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested , Power Leadless Surface Mount Transistor " for additional information. AMPLIFIER DESIGN Impedance matching


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PDF MRF1517T1 AN215A,
Not Available

Abstract: No abstract text available
Text: , Hand Wound Copper Wire Q1 RF Power LDMOS Transistor MRFE6VP5300NR1 Freescale R1 , LP2951ACDMR2G ON Semiconductor U2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor PCB , j18.2 15.2 + j7.99 104 15.5 + j19.6 15.7 + j7.94 108 17.2 + j20.9 16.2 + j7


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PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1
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