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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor B C 458 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - Transistor B C 458

Abstract: MPSA13 transistor c 458 MPS-A13 c 458 c transistor transistor 458 MPSA14
Text: Darlington Transistor Thermal Characteristics Ta=25° C unless otherwise noted MPSA13 NPN Darlington Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 , for surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform , . Rev. I15 4 MPSA13 Rev. B www.fairchildsemi.com MPSA13 NPN Darlington Transistor , MPSA13 NPN Darlington Transistor · This device is designed for applications requiring extremely


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PDF MPSA13 MPSA14 MPSA13 Transistor B C 458 transistor c 458 MPS-A13 c 458 c transistor transistor 458
2005 - BC327A

Abstract: Transistor B C 458
Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and , . Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol = 25° C unless otherwise noted , mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ° C TSTG Storage Temperature -55 ~ 150 ° C Electrical Characteristics Symbol Ta = 25° C , Figure 2. Static Characteristic -20 IB= mA - 5.0 A I B = - 4.5m = IB 0m A - 4. A I B = -


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PDF BC327A BC327A Transistor B C 458
2005 - Not Available

Abstract: No abstract text available
Text: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and , . Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol = 25° C unless otherwise , 25° unless otherwise noted C Parameter Test Condition Min. Typ. Max. Units , Figure 2. Static Characteristic -20 IB= mA - 5.0 A I B = - 4.5m = IB 0m A - 4. A I B = - 3.5m A = 3.0m IB A I B = - 2 .5 m IB = 0mA - 2. IB = -400 -300 IC[mA], COLLECTOR


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PDF BC327A BC327A
2006 - C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 C1008O NPN transistor to-92 "high gain" KSC1008 NPN transistor 500ma TO-92 ksc1008-y transistor ksc1008
Text: Corporation KSC1008 Rev. B 1 www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package Marking and , Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , body, or ( b ) support or sustain life, or ( c ) whose failure to perform when properly used in accordance , 5 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN


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PDF KSC1008 700mA 800mW KSA708 KSC1008C KSC1008 C1008Y TRANSISTOR c1008y C1008YC transistor BU 102 C1008O NPN transistor to-92 "high gain" NPN transistor 500ma TO-92 ksc1008-y transistor ksc1008
2006 - C1008Y TRANSISTOR

Abstract: 92/TP218 transistor KSC1008
Text: . B 1 www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor September 2006 , ) 2 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package , Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , body, or ( b ) support or sustain life, or ( c ) whose failure to perform when properly used in accordance , 5 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN


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PDF KSC1008 700mA 800mW KSA708 KSC1008C KSC1008 C1008Y TRANSISTOR 92/TP218 transistor
2005 - BC638

Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25° C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 ° C TSTG Storage Temperature -65 ~ 150 ° C Electrical Characteristics Symbol Ta = 25° C unless otherwise noted , www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1


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PDF BC638 BC638 BC637 transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
2005 - bc640

Abstract: transistor bC640 transistor c 458 BC640TFR BC640TF BC640TAR BC640TA BC639 BC640BU bc640 pnp
Text: Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 , for surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform , BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25° C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 ° C TSTG Storage


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PDF BC640 BC640 BC639 transistor bC640 transistor c 458 BC640TFR BC640TF BC640TAR BC640TA BC639 BC640BU bc640 pnp
2005 - transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Text: Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 , for surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform , BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25° C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 ° C TSTG Storage


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PDF BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR
2005 - Transistor B C 458

Abstract: c 458 c transistor transistor c 458 NPN transistor Electronic ballast to92 transistor 458 FJN3303 458 transistor
Text: FJN3303 NPN Silicon Transistor Planar Silicon Transistor January 2005 Symbol TC = 25° C unless , Silicon Transistor Planar Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 , ( b ) support or sustain life, or ( c ) whose support device or system, or to affect its safety or , FJN3303 NPN Silicon Transistor Planar Silicon Transistor High Voltage Switch Mode Application · , . Collector 3.Base Absolute Maximum Ratings Symbol Ta = 25° C unless otherwise noted Parameter


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PDF FJN3303 Transistor B C 458 c 458 c transistor transistor c 458 NPN transistor Electronic ballast to92 transistor 458 FJN3303 458 transistor
2001 - c 458 c transistor

Abstract: 2N6520
Text: surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , 2N6517 2N6517 High Voltage Transistor · · · · Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mW Complement to 2N6520 Suffix "- C " means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter


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PDF 2N6517 625mW 2N6520 2N6515 2N6517CTA 2N6517TA 2N6517BU 2N6517 c 458 c transistor
2001 - Transistor B C 458

Abstract: No abstract text available
Text: to cause the failure of the life support or ( b ) support or sustain life, or ( c ) whose failure to , 2N6519 2N6519 High Voltage Transistor · Collector-Emitter Voltage: VCEO= -300V · Collector Dissipation: PC (max)=625mW · Complement to 2N6516 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Power Dissipation Derate above 25° C Junction Temperature Storage Temperature 1. Emitter 2. Base 3


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PDF 2N6519 -300V 625mW 2N6516 2N6520 Transistor B C 458
2006 - 2N6428A

Abstract: No abstract text available
Text: Transistor Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 , body, or ( b ) support or sustain life, or ( c ) whose failure to perform when properly used in accordance , 2N6428A tm NPN Epitaxial Silicon Transistor Features · This device is designed for high , 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25° C unless otherwise , ° C TSTG Storage Temperature Range - 55 ~ 150 ° C * These ratings are limiting values


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PDF 2N6428A 2N6428A
2006 - BF494

Abstract: transistor BF494 Transistor B C 458 bf494 equivalent bf494 TRANSISTOR equivalent transistor c 458 bf494 TRANSISTOR OF transistor BF494 transistor 458 transistor 222
Text: Transistor Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 , implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when properly used , BF494 tm NPN RF Transistor TO-92 Absolute Maximum Ratings * Symbol 1. Collector 2. Emitter 3. Base Ta = 25° C unless otherwise noted Value Unit VCEO Collector-Emitter Voltage , V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 ° C


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PDF BF494 BF494 transistor BF494 Transistor B C 458 bf494 equivalent bf494 TRANSISTOR equivalent transistor c 458 bf494 TRANSISTOR OF transistor BF494 transistor 458 transistor 222
2007 - c 458 c transistor

Abstract: MPSA13 transistor c 458
Text: Characteristics Ta=25° C unless otherwise noted MPSA13 NPN Darlington Transistor Typical Characteristics , MPSA13 NPN Darlington Transistor · This device is designed for applications requiring extremely , . Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25° C unless otherwise noted , Operating and Storage Junction Temperature Range - Continuous 1.2 A -55 to +150 ° C Electrical Characteristics Ta=25° C unless otherwise noted Symbol Parameter Test Condition Min


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PDF MPSA13 c 458 c transistor MPSA13 transistor c 458
2001 - transistor c 458

Abstract: 2n6518
Text: the failure of the life support or ( b ) support or sustain life, or ( c ) whose failure to perform device , 2N6518 2N6518 High Voltage Transistor · Collector-Emitter Voltage: VCEO= -250V · Collector Dissipation: PC (max)=625mW · Complement to 2N6515 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Power Dissipation Derate above 25° C Junction Temperature Storage Temperature 1. Emitter 2. Base 3


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PDF 2N6518 -250V 625mW 2N6515 2N6520 transistor c 458 2n6518
2001 - Not Available

Abstract: No abstract text available
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO , the failure of the life support or ( b ) support or sustain life, or ( c ) whose failure to perform device , 2N6516 2N6516 High Voltage Transistor · Collector-Emitter Voltage: VCEO=300V · Collector , 625 150 -55 ~ 150 Units V V V mA mW ° C ° C · Refer to 2N6515 for graphs Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter


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PDF 2N6516 625mW 2N6519 2N6515 625mW 2N6519 2N6516BU 2N6516TA
2007 - MPSA13

Abstract: No abstract text available
Text: www.fairchildsemi.com MPSA13 NPN Darlington Transistor Thermal Characteristics Ta=25° C unless otherwise noted , www.fairchildsemi.com MPSA13 NPN Darlington Transistor Mechanical Dimensions TO-92 +0.25 4.58  , implant into the body or ( b ) support or sustain life, and ( c ) whose failure to perform when properly , MPSA13 NPN Darlington Transistor • This device is designed for applications requiring , otherwise noted C Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO


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PDF MPSA13 MPSA13
2007 - PN2369

Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
Text: www.fairchildsemi.com 1 MMBT2369 / PN2369 - NPN Switching Transistor February 2008 Symbol Ta = 25° C , into the body, or ( b ) support or sustain life, and ( c ) whose failure to perform when properly used in , MMBT2369 / PN2369 NPN Switching Transistor · This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. · Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1


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PDF MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369 PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30
2007 - Not Available

Abstract: No abstract text available
Text: PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1. Emitter 2. Base 3. Collector = 25× C unless otherwise noted Parameter Ratings Units , which, (a) are intended for surgical implant into the body, or ( b ) support or sustain life, and ( c , MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed , based on a maximum junction temperature of 150 degrees C . 2) These are steady limits. The factory


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PDF MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369
2002 - Not Available

Abstract: No abstract text available
Text: -92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C , Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150 Units V V V mA mW ° C ° C E B R Equivalent Circuit C Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE , , August 2002 FJN4311R Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 ­0.05 +0.10


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PDF FJN4311R FJN3311R FJN3311R FJN4311RTA FJN4311RBU
2001 - Transistor MY

Abstract: KSP94 KSP94BU ksp44 cross KSP44
Text: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO , to cause the failure of the life support or ( b ) support or sustain life, or ( c ) whose failure to , KSP94 KSP94 High Voltage Transistor · High Collector-Emitter Voltage: VCEO= -400V · Low , -300 625 150 -55~150 Units V V V mW mW ° C ° C Electrical Characteristics Ta=25° C unless otherwise , -92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20


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PDF KSP94 -400V KSP44 KSP44 KSP94TA KSP94BU Transistor MY KSP94 ksp44 cross
2002 - Not Available

Abstract: No abstract text available
Text: -92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C , Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150 Units V V V mA mW ° C ° C E B R Equivalent Circuit C Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE , 175 Ta[ C ], AMBIENT TEMPERATURE Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJN4309R Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46


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PDF FJN4309R FJN3309R FJN3309R FJN4309RBU FJN4309RTA
2002 - Not Available

Abstract: No abstract text available
Text: -92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C , Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150 Units V V V mA mW ° C ° C E R B Equivalent Circuit C Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE , DISSIPATION 250 200 150 100 50 0 0 25 50 o 75 100 125 150 175 Ta[ C , , August 2002 FJN4310R Package Dimensions TO-92 4.58 ­0.15 +0.25 0.46 14.47 ±0.40


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PDF FJN4310R FJN3310R FJN3310R FJN4310RBU FJN4310RTA
2002 - Not Available

Abstract: No abstract text available
Text: Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 ~ 150 Units V V V mA mW ° C ° C E B R2 Equivalent Circuit C R1 Electrical Characteristics Ta=25° C unless otherwise noted Symbol , into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when properly used in , TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base


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PDF FJN3313R FJN4313R FJN3313RBU FJN3313RTA
2001 - KSC900-L

Abstract: No abstract text available
Text: Noise Level : NL=50mV (MAX.) · Suffix "- C " means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base , Junction Temperature Storage Temperature Value 30 25 5 50 250 150 -55 ~ 150 Units V V V mA mW ° C ° C Electrical Characteristics Ta=25° C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat


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PDF KSC900 KSC900CGTA KSC900LTA KSC900GTA KSC900CYTA KSC900LBU KSC900 KSC900-L
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