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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3470ETS8#TRM Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LT3470HTS8#TRMPBF Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 125°C
LT3470ITS8#PBF Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LT3470HTS8#PBF Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 125°C
LT3470HTS8#TRPBF Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 125°C
LT3470ITS8 Linear Technology LT3470 - Micropower Buck Regulator with Integrated Boost and Catch Diodes; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

Transistor AND DIODE Equivalent list Datasheets Context Search

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Transistor AND DIODE Equivalent list

Abstract: Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk TD62783 equivalent 2SK1078 TD62783 pnp DARLINGTON TRANSISTOR ARRAY TD62504 equivalent
Text: ) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit OUTPUT 1 6 NC 2 5 , (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit Package 100 COMMON , [ 2 ] Product List Bipolar Transistor Arrays Rating Part No. Function VOUT (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit TD62001P TD62001 RIN 0 TD62002P , TD62064P VOUT (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit 04 NC I4


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PDF 2SA1203 HSOP16 TD62M8604AF 2SA1680 Transistor AND DIODE Equivalent list Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk TD62783 equivalent 2SK1078 TD62783 pnp DARLINGTON TRANSISTOR ARRAY TD62504 equivalent
2005 - smd transistor J3

Abstract: smd transistor equivalent table Transistor AND DIODE Equivalent list j3 smd transistor EB052 schematic diagram of led monitor 201 smd transistor 3M smd transistor TRANSISTOR SMD 3m smd transistor w J3
Text: SMD 2 3 Diode , Schottky, 2 A, 20 V, SMB Transistor , PNP, SOT-223 Manufacturer/Part Number , . 3 Parts List , Vendor List .6 , HARDWARE TEST EQUIPMENT 4. The following is a suggested equipment list for testing the ADP2291-EVAL , , the reverse voltage protection diode , D1, needs to be removed and a diode with a 2 A rating needs to


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PDF ADP2291-EVAL ADP2291, ADP2291 ADP2291-EVAL EB05266-0-1/05 smd transistor J3 smd transistor equivalent table Transistor AND DIODE Equivalent list j3 smd transistor EB052 schematic diagram of led monitor 201 smd transistor 3M smd transistor TRANSISTOR SMD 3m smd transistor w J3
transistor equivalent table

Abstract: IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
Text: diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode . In this case, you make use the discrete components with proper , schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , /4 http://www.ad-tech.co.kr 1 CH Power Supply IC (3.3V / 350mA) ADT7220 Part List


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PDF 350mA) ADT7220 ADT7220 350mA 500kHz 300mA transistor equivalent table IC FP103 sot-26 pwm controller Transistor AND DIODE Equivalent list FP103 Device Name 23 330 LDO 3.3V RSX101M-30 MMBT589LT1 ccd camera module ta701
1997 - 1A40Vdiode

Abstract: LM3578 200k inductor lm3578m 1563A advantages and disadvantage of modem MBR0540T1 LM3578A D44C3A AN-1066
Text: Transistor D1 1A, 40V Diode , 1N5819 L Lp-33 µH, Ip-2.0A Inductor Cin 220 µF, 6.3V , determined by the input voltage. Diode D is off during this period. Once the switch, SW, turns off, diode D , the small-signal control to output voltage transfer function). However, the switch and output diode , necessitate using power switch and output diode with larger current and power dissipation ratings. Larger , inductor, the input and output capacitors, the power switch (included in the LM3578A), and the output diode


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PDF LM3578A 1A40Vdiode LM3578 200k inductor lm3578m 1563A advantages and disadvantage of modem MBR0540T1 D44C3A AN-1066
diode IN4148

Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Text: bias circuit) COMPONENT DESCRIPTION VALUE CATALOGUE NO. T1 transistor , BDT85 (or equivalent ) D1 diode , IN4148 (or equivalent ) note 1 D2 diode , BY239800 note 2 R1 resistor 100Q R2 resistor 10 , power transistor Preliminary specification January 1992 File under Discrete Semiconductors, SC15 , microwave power transistor LXE18300X FEATURES • Internal Input and output prematchlng ensures a good , NPN silicon planar epitaxial microwave power transistor intended for use in common emitter class AB


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PDF LXE18300X 00350fll diode IN4148 Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
transistor equivalent table

Abstract: sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 ADT7221 Transistor AND DIODE Equivalent list
Text: diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , transistor and a schottky barrier diode . In this case, you make use the discrete components with proper , schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , components · Externally composed LDO pass transistor · 500kHz fixed frequency internal oscillator · Over , /4 http://www.ad-tech.co.kr 1 CH Power Supply IC (5.0V / 350mA) ADT7221 Part List


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PDF 350mA) ADT7221 ADT7221 350mA 500kHz 300mA transistor equivalent table sot-26 pwm controller SOT-26 301 PWM controller sot-26 Transistor Equivalent list RSX101M-30 MMBT589LT1 FP103 Transistor AND DIODE Equivalent list
Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 LXE16350X SC15 IN4148 BDT85
Text: . TR1 transistor , BDT85 (or equivalent ) D1 diode , IN4148 (or equivalent ); note 1 D2 diode , Philips Semiconductors Product specification NPN microwave power transistor LXE16350X , silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter , Manufacturer Philips Semiconductors Product specification NPN microwave power transistor LXE16350X LIMITING , transistor LXE16350X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal


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PDF LXE16350X MBC423 OT439A. Transistor Equivalent list diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 LXE16350X SC15 IN4148 BDT85
2002 - LM3578

Abstract: AN1066 1A40Vdiode LM3578M MBR0540T1 LM3578A D44C3A AN-1066 AN1055 1N5819
Text: inductor current iL ramps up at a slope determined by the input voltage. Diode D is off during this period. Once the switch, SW, turns off, diode D starts to conduct and the energy stored in the inductor , However, the switch and output diode peak currents are larger when the converter is operating in discontinuous mode. Larger peak currents necessitate using power switch and output diode with larger current , the output voltage, Vd is the forward voltage drop of the output diode D, and Vce(sat) is the on


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PDF AN-1066 LM3578 AN1066 1A40Vdiode LM3578M MBR0540T1 LM3578A D44C3A AN-1066 AN1055 1N5819
Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Text: TR1. In thermal contact with D.U.T. DESCRIPTION transistor , BDT85 (or equivalent ) diode , IN4148 (or equivalent ); note 1 diode , BY239800; note 2 resistor resistor resistor potentiometer, 10 turns (sfernice , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , power transistor in a SOT439A metal ceramic package, with emitter connected to flange. WARNING Product , Philips Semiconductors Product specification NPN microwave power transistor LXE16350X LIMITING


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PDF OT439A LXE16350X RA439 Transistor Equivalent list Transistor AND DIODE Equivalent list capacitor feed-through
C2 6 zener diode

Abstract: Transistor AND DIODE Equivalent list diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 Zener Diode C3 5 diode zener c2 6 2n3906 equivalent transistor 5v 1a ZENER DIODE
Text: -2CHG010) 0.01uF ceramic 1uF ceramic MBR0540L 40V 0.5A Schottky diode Central semiconductor CMPB4448 (or any 1N4448 equivalent 60V signal diode ) Central semiconductor CMPD7000 dual diode (These are duals, but four 1N4448 equivalent 60V signal diodes can be substituted for D3+D4 and D5+D6.) Zetex BZX84C6V8, Panasonic MA3068CT, or other 6.8V SOT-23 zener diode (On this evaluation board this is composed of a 6.2V , shown on the schematic Full Parts List C1 47uF 35V Sanyo GX (Tantalum not recommended here) C2


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PDF V/350mA, V/150mA, -24V/30mA, -85V/1mA 100uF MAX668 150mA 350mA OT-23 BZX84C43 C2 6 zener diode Transistor AND DIODE Equivalent list diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 Zener Diode C3 5 diode zener c2 6 2n3906 equivalent transistor 5v 1a ZENER DIODE
1995 - bc547 philips

Abstract: NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 mosfet current limiter r17a transistor t13 BD438 equivalent EQUIVALENT TRANSISTOR bc547
Text: with a BD438 or equivalent . If a bipolar transistor is used the collector current IcT13 is mainly , voltage source VA has been built-up with transistor T11, zener diode D8 and resistor R41 , the same , already has been mentioned, been built-up with transistor T11, zener diode D9 and resistor R41. The diode , list of both the circuit of figure 6 for as well the MOSFET and the darlington transistor output stage , . . . . . . . . . . . . . . . 17 4. Parts list . . . . . . . . . . . . . . . . . . . . . . . .


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PDF TDA5142 EIE/AN93013 TDA5142 TDA514x sta43 BZX79C8V2) BYV10-40 bc547 philips NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 mosfet current limiter r17a transistor t13 BD438 equivalent EQUIVALENT TRANSISTOR bc547
B0239

Abstract: Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Text: , B0239 or equivalent DC blocking chip capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent ; note 1 diode BY239 or equivalent ; note 2 3.5 turns 0.5 mm copper wire; internal , Philips Semiconductors Preliminary specification NPN microwave power transistor FEATURES · , microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange , power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).


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PDF LX1214E500X 100A1201kp B0239 Transistor AND DIODE Equivalent list Transistor Equivalent list LC437 AB-162 transistor
Transistor Equivalent list

Abstract: J3 transistor by239 1500 100A101kp diode J3
Text: bypass capacitor tantalum capacitor diode BY239 or equivalent ; note 1 diode BY239 or equivalent ; note 2 4 , Philips Semiconductors Product specification NPN microwave power transistor LFE15600X , silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package , Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute , Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS


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PDF LFE15600X Transistor Equivalent list J3 transistor by239 1500 100A101kp diode J3
2009 - ff450r12me3

Abstract: C28T sod6 C-EUC1206 SOT23 transistor R2C t60403-d4615 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
Text: Regulator 1 Transformer 1 Transistor Transistor Transistor TrenchMOS Unipolar TVS Diode , .25 Gate resistor list , .37 Gate resistor list , /DC converter PWM signal for Top transistor , negative logic PWM signal for Top transistor , positive , transistor , negative logic PWM signal for Bottom transistor , positive logic Sigma / Delta signal for


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PDF AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, ff450r12me3 C28T sod6 C-EUC1206 SOT23 transistor R2C t60403-d4615 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
2009 - VAC t60403

Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Text: .25 Gate resistor list , .37 Gate resistor list , /DC converter PWM signal for Top transistor , negative logic PWM signal for Top transistor , positive , transistor , negative logic PWM signal for Bottom transistor , positive logic Sigma / Delta signal for , be applied to the 6ED100E12-12-F2, but layout and part list of this board provided in chapter 7


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PDF AN2008-02 2ED100E12-F2 6ED100E12-F2 AN2007-04, VAC t60403 ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
SMD Transistor Y12

Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
Text: . Diode : signal, low power Diode : variable capacitance Transistor : low power, audio frequency Transistor : power, audio frequency Diode : tunnel diode Transistor : low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode : magnetic sensitive Transistor : power , semiconductor component Control or switching device: low power (e.g. thyristor) Transistor : low power, switching Control or switching device: power (e.g. thyristor) Transistor : power switching Diode


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1999 - 200k inductor

Abstract: AN-1066 D44C3A LM3578A MBR0540T1 LM3578M AN1066
Text: determined by the input voltage. Diode D is off during this period. Once the switch, SW, turns off, diode D , output diode peak currents are larger when the converter is operating in discontinuous mode. Larger peak currents necessitate using power switch and output diode with larger current and power , (included in the LM3578A), and the output diode . In order to select these components, it is necessary to , output voltage, and the voltage drops across the output diode and the switch, the maximum and minimum


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PDF LM3578A AN-1066 200k inductor AN-1066 D44C3A MBR0540T1 LM3578M AN1066
2000 - C1608JB1H104KT

Abstract: KCA-K4R LIM55A-T 1SS355TE-17 IC/FSGM300N Equivalent UWX1C100MCL1GB S-93C46ADFJ-TB-G lim55at FIT-10 GRM1882C1H220JA01D
Text: Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Transistor , Equivalent Equivalent Equivalent Equivalent Equivalent DMC Co., Ltd Name Part List Rev.4 P/N FIT , .17 2-10. List of Command/Responses , .26 Terminal No./Name External Dimensions Circuit Drawing Part List Connector Mounting , Internal Initialization 500ms 2-10. List of Command/Responses Command Name 05h 01h 21h 31h 02h


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PDF FIT-10 FIT-10/IF C1608JB1H104KT KCA-K4R LIM55A-T 1SS355TE-17 IC/FSGM300N Equivalent UWX1C100MCL1GB S-93C46ADFJ-TB-G lim55at GRM1882C1H220JA01D
2012 - 8002 audio amplifier 8 pin

Abstract: UUD1E471MNR1GS The 8002 audio Amplifier IC 8001/2TW Transistor AND DIODE Equivalent list 2TW/170
Text: across the switching transistor and diode is increased to make the ripple voltage higher and this , Control 3-2 Overcurrent Protection / Thermal Shutdown 12 13 4. Terminal Description 3-1 Terminal List , made by open collector driving of the transistor etc. In the case that both soft start and ON-OFF of transistor are used, since the discharge current of C4 and C5 flows across the transistor for ON-OFF , outside. 2-3 Circuit Diagram Internal Equivalent Circuit (SPI-8001TW and SPI-8002TW) VIN 3 VCC SPI


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PDF SPI-8000TW SPI-8000TW EI-00070 8002 audio amplifier 8 pin UUD1E471MNR1GS The 8002 audio Amplifier IC 8001/2TW Transistor AND DIODE Equivalent list 2TW/170
2007 - C5100 MOSFET

Abstract: UC3842 smps design UC3842 step up converter flyback smps uc3845 UC3842 smps project AN1889 SMPS CIRCUIT DIAGRAM UC3842 pcb design on uc3842 transistor c5100 NF-2000
Text: Transistor is 10 times bigger than that of an equivalent high voltage Power MOSFET. Starting from the , . . . 25 10 PCB layout and list of materials . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . 32 2/33 AN1889 List of figures List of figures Figure 1 , . Figure 20. Figure 21. Figure 22. ESBT symbol and equivalent circuit . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . 20 ESBT equivalent circuit. . . . . . . . . . . . . . . . . . . . . .


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PDF AN1889 STC03DE170HV C5100 MOSFET UC3842 smps design UC3842 step up converter flyback smps uc3845 UC3842 smps project AN1889 SMPS CIRCUIT DIAGRAM UC3842 pcb design on uc3842 transistor c5100 NF-2000
Transistor AND DIODE Equivalent list

Abstract: No abstract text available
Text: . DESCRIPTION transistor , BDT85 (or equivalent ) diode , BY239800 (or equivalent ); note 1 diode , BY239800; note 2 , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to , specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating , microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-m b fyh m b -h Note 1. See "Mounting


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PDF BDT85 BY239800 BY239800; LLE16120X Transistor AND DIODE Equivalent list
12NC philips diode 93

Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
Text: transistor LLE15180X PREMATCHING TEST BIAS CIRCUIT CIRCUIT Fig.4 Class AB bias circuit. List of components , (J.F, >30 V D1 diode BY239 or equivalent ; note 1 D2 diode BY239 or equivalent ; note 2 L1 4 , Philips Semiconductors Product specification NPN microwave power transistor LLE15180X , and 1.6 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued , Product specification NPN microwave power transistor LLE15180X LIMITING VALUES In accordance with the


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PDF LLE15180X OT437A. 12NC philips diode 93 transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
diode BY239

Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 erie 1250-003 SC15 LXE15450X BY239
Text: transistor LXE15450X PREMATCHING TEST BIAS CIRCUIT CIRCUIT Fig.5 Class AB bias circuit. List of components , |aF, >30 V D1 diode BY239 or equivalent ; note 1 D2 diode BY239 or equivalent ; note 2 L1 4 , Philips Semiconductors Product specification NPN microwave power transistor LXE15450X , GHz and 1.7 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A , Semiconductors Product specification NPN microwave power transistor LXE15450X LIMITING VALUES In accordance


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PDF LXE15450X MLC446 OT439A. diode BY239 bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 erie 1250-003 SC15 LXE15450X BY239
transistor C711

Abstract: BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB
Text: BY239 or equivalent (note 1) D2 diode BY239 or equivalent (note 2) LI 4 turns 0.5 mm copper wire , power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 , transistor LLE16350X FEATURES • Diffused emitter ballasting resistors providing excellent current , NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange , planar epitaxial ^^^ 6350X microwave power transistor LIMITING VALUES In accordance with the Absolute


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PDF LLE16350X 003301b 0D33G214 transistor C711 BY239 LLE16350X diode BY239 c711 BDT91 SC15 LTSB
diode BY239

Abstract: Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 FO-231 100A101kp LFE18500X A376
Text: ORDERING INFORMATION TR1 transistor , BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF ATC , pF Erie 1250-003 C7 electrolytic capacitor 10 ^iF, 50 V D1 diode BY239 or equivalent ; note 1 D2 diode BY239 or equivalent ; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 , transistor LFE18500X FEATURES • Diffused emitter ballasting resistors providing excellent current , microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to


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PDF LFE18500X 7110fl5b 0DT4307 FO-231. 711002b diode BY239 Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 FO-231 100A101kp LFE18500X A376
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