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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor AC 187 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - Transistor AC 187

Abstract: No abstract text available
Text: RTD OPERATION q LOW OFFSET DRIFT: 0.4µV/ °C q LOW OUTPUT CURRENT NOISE: 30nAp-p q HIGH PSR: 110dB , Temperature ( °C ) IR IR VLIN VREG 7.5V to 36V + VPS 4-20 mA XTR112 XTR114 RG VO RL , SPECIFICATIONS At TA = +25°C, V+ = 24V, and TIP29C external transistor , unless otherwise noted. XTR112U , ±0.4 T T A/V % ppm/ °C % ±50 ±0.4 ±0.3 ±10 Full Scale (VIN) = 50mV ±100 ±1.5 ±3 ±50 T T T T ±250 ±3 T ±100 µV µV/ °C µV/V µV/V T 50 V nA pA/ °C


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PDF XTR112 XTR114 4-20mA XTR112: XTR114: 30nAp-p 110dB SO-14 XTR112 XTR114 Transistor AC 187
transistor tl 187

Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor
Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for , Current Gain—hpE = 40 (Min) lc = 0.5 Ade BD 185, 187 , 189 are complementary with BD 186, 188, 190 MAXIMUM RANGS Rating Symbol Type Value Uni« Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 Vdc Collector Current ■c 4.0 Ade Base Current 'b 2.0 Ade Total Device Dissipation TC


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diode A106

Abstract: a106 diode transistor A106
Text: PHOO NONLINEARITY CORRECTION USIN G XTR105 • LOW O FFSET DRIFT: 0.4^lV/ °C • LOW OUTPUT , Process Temperature ( °C ) —— lR - 0.8mA Instrumentation amplifier gain can be configured for a , transistor , unless otherwise noted. XTR105P, U PA RA M ETER CONDITIONS OUTPUT Output Current , mA mA ±50 ±0.9 mA jiA jiA/ °C HA/V ^A/V |iA/mA nAp-p * * ±0.4 * * A/V % ppm/ °C % * * * * ±250 ±3 * ±100 uV ^iV/ °C ixV/V tiV/V * if


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PDF XTR105 4-20mA 30nAp-p 110dB 14-PIN SO-14 XTR105 4-20mA, diode A106 a106 diode transistor A106
TRANSISTOR BD 187

Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD187 BD185 10 watt power transistor bd TL 187 TRANSISTOR NPN motorola power transistor to-126
Text: SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for use in 5 to 10 Watt , (Min) • BD 185, 187 . 189 are complementary with BD 186, 188. 190 lc = 0.5 Ade MAXIMUM RANGS Rating Symbol Type Value Unit Collector-Emitter Voltage VCEO BD 185 BD 187 BD 189 30 45 60 Vdc Collector-Base Voltage VCBO BD 185 BD 187 BD 189 40 55 70 Vdc Emitter-Base Voltage v EBO 5 Vdc Collector Current 'c 4.0 , / °C Operating and Storage Junction Temperature Range TJ,Tstg —65 to +150 °C THERMAL


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Transistor AC 187

Abstract: AC 187 npn transistor TO 1 187 transistor npn
Text: specification b?E ]' > NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable , DESCRIPTION base 2 • Good thermal stability. collector Low cost NPN transistor in a plastic , collector current - 50 mA P« total power dissipation up to Ts = 70 °C (note 1) - , 300 mW T* storage temperature -55 150 °C T, junction temperature - 150 °C up to T s = 70 °C (note 1) Note 1. Ta is the temperature at the soldering point of the


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PDF bb53T31 0024bfll BF747 Transistor AC 187 AC 187 npn transistor TO 1 187 transistor npn
BF747

Abstract: MBB400 DB64 transistor HJ 388
Text: /DISCRETE b?E NPN 1 GHz wideband transistor £ BF747 FEATURES • Stable oscillator operation • High current gain • Good thermal stability. DESCRIPTION Low cost NPN transistor in a plastic SOT23 , collector - 3 V 'cm peak collector current - 50 mA p« total power dissipation up to Ts = 70 °C (note 1 , to Ts = 70 °C (note 1) - 300 mW Tatg storage temperature -55 150 °C T, junction temperature - 150 °C Note 1. Ta is the temperature at the soldering point of the collector tab. November 1992


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PDF bb53-J31 00E4bà BF747 BF747 MBB400 DB64 transistor HJ 388
photo transistor til 78

Abstract: Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN TIL188-4 E65085 AC 187 npn transistor TO 1 TIL188-1 Phototransistor Til 78 TIL187
Text: 100 TIL 187 NORMALIZED TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 7 2-0 , TILI 87-1 THRU TIL1B7 4 TILI 88 1 THRU TIL188-4 AC INPUT OPTOCOUPLERSfOPTOISOLATORS SOOSQ12A D29BO. JANUARY 1987— REVISED JULY 1989 • AC Signal Input • Gallium Arsenide Dual-Diode Infrared , Environment description The TIL187 and TIL 188 Optocouplers are designed for use in AC applications that , TILI 88 1 THRU TILI 88 4 AC INPUT OPTOCOUPLERS/OPTOISOLATORS absolute maximum ratings at 25 °C


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PDF TIL188-4 SOOSQ12A D29BO. E65085 TIL187 photo transistor til 78 Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN E65085 AC 187 npn transistor TO 1 TIL188-1 Phototransistor Til 78
y1 npn

Abstract: 538 NPN transistor
Text: specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable , transistor in a plastic SOT23 envelope. It is intended for VHF and UHF TV-tuner applications and can be , 50 mA P*. total power dissipation - 300 mW up toT s= 70 °C (note 1) T* storage temperature range -55 150 °C Ti junction temperature - 150 °C Note 1 , N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor Product specification b7E D BF547


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PDF bbS3R31 0Q2Mb37 BF547 BF547 y1 npn 538 NPN transistor
1998 - circuit diagram of mosfet based smps power supply

Abstract: AC to DC smps circuit diagram pages TEA1504 BZX79C12V Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS philips tea 1400 flyback 200w Philips RSM 2222 036 CE423V
Text: as the zener Z1 voltage level (+ VbeTR1) is reached a current pulse is generated through transistor , /turn ratio immediately drops to a much lower level. Together with thyristor Q2 also transistor TR1 will start to conduct (one-shot). The one shot current pulse generated by transistor TR1 is fed to , between 100 mADC and 800 mADC. Diagram a) shows the AC output voltage. Diagram b) shows the output , (Vout1) a) Figure 5 shows the main output voltage (VOUT1) AC ripple during high load conditions at


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PDF TEA1504 AN98011 TEA1504 BC547 DIL14 A7805 circuit diagram of mosfet based smps power supply AC to DC smps circuit diagram pages BZX79C12V Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS philips tea 1400 flyback 200w Philips RSM 2222 036 CE423V
MBB400

Abstract: vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES â , DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. PIN DESCRIPTION 1 base 2 emitter 3 , power dissipation up to Ts = 70 °C ; note 1 - 300 mW fT transition frequency lc = 15 mA; VCE = 10 V; f , total power dissipation up to Ts = 70 °C ; note 1 - 300 mW Tstg storage temperature -55 +150 °C Tj junction temperature - 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin


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PDF BF747 MBB400 vqb 201 BF747 HS11 TRANSISTOR K 314 marking code 604 SOT23 top 256 yn
Not Available

Abstract: No abstract text available
Text: OFFSET DRIFT: 0.4 jiV/ °C • LOW OUTPUT CURRENT NOISE: 30nAp-p • HIGH PSR: 110dB min • HIGH CMR , while the XTR114 has two 1OOjiA sources for RTD excitation. -2 0 0 °C +850°C Process Tem perature ( °C ) Versatile linearization circuitry provides a 2nd-order correction to the RTD, typically , , and TIP 29C external transistor , unless otherw ise noted. X TR 112U X TR 114U PA R A M ETER C O , mA ±50 ±0.9 mA iiA jiA / °C HA/V HA/V |±A/mA M-Ap-p S = 40/R g ±0.05 ±3 0.003


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PDF XTR112 XTR114 4-20mA XTR112: XTR114: 100jiA Pt1000 30nAp-p 110dB SO-14
BF547

Abstract: HS11 MSB003 PHE0 PHILIPS bf547
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES â , cost NPN transistor in a plastic SOT23 package. MSB003 Top view Marking code: E16. Fig. 1 SOT23 , - 3 V IcM peak collector current - 50 mA Ptot total power dissipation up to Ts = 70 °C ; note 1 - , current - 50 mA Ptot total power dissipation up to Ts = 70 °C ; note 1 - 300 mW Tstg storage temperature range -65 +150 °C Tj junction temperature - 150 °C Note 1. Ts is the temperature at the


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PDF BF547 MSB003 BF547 HS11 MSB003 PHE0 PHILIPS bf547
aou 746

Abstract: BE 187 TRANSISTOR 538 NPN transistor BF547 DB64 TRANSISTOR 185 846
Text: transistor b?E D Product specification BF547 FEATURES PINNING • Stable oscillator operation PIN , collector The BF547 is a low cost NPN transistor in a plastic SOT23 envelope. It is intended for VHF and , total power dissipation up to Ts = 70 °C (note 1) - 300 mW T- storage temperature range -55 150 °C T, junction temperature - 150 °C Note 1. T, is the temperature at the soldering point of the , Philips Semiconductors K_ ~ "N AHER PHILIPS/DISCRETE b7E » NPN 1 GHz wideband transistor BF547 THERMAL


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PDF BF547 BF547 aou 746 BE 187 TRANSISTOR 538 NPN transistor DB64 TRANSISTOR 185 846
2003 - a1757

Abstract: A1797
Text: transistor BLF368 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETERS , DISCRETE SEMICONDUCTORS DAT M3D091 BLF368 VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor BLF368 PIN CONFIGURATION FEATURES • High power gain â , N-channel enhancement mode vertical D-MOS transistor , designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange


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PDF M3D091 BLF368 OT262A1 SCA75 613524/04/pp18 a1757 A1797
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G22LS-75 Power LDMOS transistor Rev. 02 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a , ) (V) (W) (dB) 2-carrier W-CDMA 2110 to 2170 28 17 18.7 [1] ηD IMD3 , 17 W Æ Gain = 18.7 dB Æ Efficiency = 30.5 % Æ IMD3 = −37.5 dBc Æ ACPR = −41.5 dBc Ì


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PDF BLF6G22LS-75 BLF6G22LS-75
2006 - Transistor TL 31 AC

Abstract: j142
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation , 2440MHz DC Current Gain 100 300 Thermal Resistance °C /W Junction - lead Breakdown Voltage 5.7 , Maximum Rating conditions is not implied. V RF Input Power* (See Note) 24 dBm +150 °C


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PDF SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142
2006 - Not Available

Abstract: No abstract text available
Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation , Gain 100 300 Thermal Resistance °C /W Junction - lead Breakdown Voltage 5.7 V Collector - , (TJ) +150 °C See Graph °C +150 Operating Temp Range (TL) RFMD Green: RoHS


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PDF SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz
2003 - equivalent transistor c 243

Abstract: No abstract text available
Text: RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 1.5 , temperature Thermal resistance CONDITIONS RATINGS UNIT 30 V +/-10 V Tc=25°C 3.6 W °C 150 -40 to +125 °C °C /W Junction to case 34.5 Note 1: Above parameters are guaranteed , Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The


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PDF RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243
1997 - Not Available

Abstract: No abstract text available
Text: OPERATION LOW OFFSET DRIFT: 0.4µV/ °C LOW OUTPUT CURRENT NOISE: 30nAPP HIGH PSR: 110dB minimum HIGH CMR , loop power-supply voltages down to 7.5V. 3 +850°C Process Temperature ( °C ) IR = 0.8mA IR , external transistor , unless otherwise noted. XTR105P, U PARAMETER CONDITIONS OUTPUT Output Current , œ» ✻ ✻ ±0.4 ✻ ✻ A/V % ppm/ °C % ±50 ±0.4 ±0.3 ±10 Full-Scale (VIN) = 50mV ±100 ±1.5 ±3 ±50 ✻ ✻ ✻ ✻ ±250 ±3 ✻ ±100 µV µV/ °C µV/V


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PDF XTR105 SBOS061B 4-20mA XTR105 4-20mA, Pt100
1997 - Not Available

Abstract: No abstract text available
Text: OPERATION LOW OFFSET DRIFT: 0.4µV/ °C LOW OUTPUT CURRENT NOISE: 30nAPP HIGH PSR: 110dB minimum HIGH CMR , loop power-supply voltages down to 7.5V. 3 +850°C Process Temperature ( °C ) IR = 0.8mA IR , external transistor , unless otherwise noted. XTR105P, U PARAMETER CONDITIONS OUTPUT Output Current , œ» ✻ ✻ ±0.4 ✻ ✻ A/V % ppm/ °C % ±50 ±0.4 ±0.3 ±10 Full-Scale (VIN) = 50mV ±100 ±1.5 ±3 ±50 ✻ ✻ ✻ ✻ ±250 ±3 ✻ ±100 µV µV/ °C µV/V


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PDF XTR105 SBOS061B 4-20mA XTR105 4-20mA, Pt100
1997 - Not Available

Abstract: No abstract text available
Text: OPERATION LOW OFFSET DRIFT: 0.4µV/ °C LOW OUTPUT CURRENT NOISE: 30nAPP HIGH PSR: 110dB minimum HIGH CMR , loop power-supply voltages down to 7.5V. 3 +850°C Process Temperature ( °C ) IR = 0.8mA IR , transistor , unless otherwise noted. XTR105P, U PARAMETER CONDITIONS OUTPUT Output Current Equation , A/V % ppm/ °C % ±50 ±0.4 ±0.3 ±10 Full-Scale (VIN) = 50mV ±100 ±1.5 ±3 ±50 T T T T ±250 ±3 T ±100 µV µV/ °C µV/V µV/V T 50 V nA pA/ °C nA pA


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PDF XTR105 SBOS061B 4-20mA 30nAPP 110dB DIP-14 SO-14 XTR105 4-20mA,
PT2000 temperature sensor

Abstract: PT2000 rtd pt2000 pt100 4 wire pt100 burr brown
Text: = +25°C, V+ = 24V, and TIP29C external transistor , unless otherwise noted. XTR112U XTR114U PARAMETER , Temperature." EXTERNAL TRANSISTOR range from 7.5V to 36V. The loop supply voltage, VPS, will differ from , limited to 3V. ADJUSTING INITIAL ERRORS Transistor Q, conducts the majority of the signal-dependent 4-20mA loop current. Using an external transistor isolates the majority of the power dissipation from the , external transistor is inside a feedback loop its characteristics are not critical. Requirements are: VCE0


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PDF XTR112 XTR114 4-20mA XTR112: XTR114: 30nAp-p 110dB SO-14 XTR114 PT2000 temperature sensor PT2000 rtd pt2000 pt100 4 wire pt100 burr brown
Not Available

Abstract: No abstract text available
Text: General Purpose Silicon Bipolar Transistor A vantek 70 m il Package Features • 22.0 dB m typ , Product: 7.0 G H z typical fr • H erm etic G old -ceram ic M icrostrip P ac k a g e .040 1.02 , silicon bipolar transistor housed in a hermetic, high reliability package. This device is designed for , im n t t GOGbMSS T AT-01670 General Purpose Silicon Bipolar Transistor A bsolute M axim um , damage. 1.0 GHz ' 2. TcASE = 25°C. 2.0 GHz 40 3. Derate at 8.3 mW/ °C for Tc > 80Â


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PDF ooob454 AT-01670 AT-01670
2011 - weight sensor circuit

Abstract: No abstract text available
Text: SQ4-A21-P For standard liquid Type PNP open-collector transistor SQ4-A21-N NPN open-collector transistor SQ4-A22-P PNP open-collector transistor SQ4-A22-N NPN open-collector transistor Water etc. For chemical liquid Material: Polypropylene Material: PFA Sulfuric , -13 PNP open-collector transistor NPN open-collector transistor â , leakage or wrong installation PNP open-collector transistor NPN


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2008 - rh1b-u

Abstract: RELAY DC12V rh2b-ul IDEC RH2B-UL RH4V2-U "Power Diode"1000v 600 a Y778 120V relay SPDT Make before break RH2B-UT 5v relay 3PDT for pcb mounting
Text: Leaf Spring (top latch) RH1B, RH2B, RH3B, RH4B SFA-101 3 SFA-301 3 AC Coil Ratings Rated Current (mA) ±15% at 20°C Voltage (V) AC 50Hz SPDT DPDT 3PDT Coil Resistance () ±10% at 20°C AC 60Hz 4PDT SPDT DPDT 3PDT 4PDT SPDT DPDT 3PDT Operation Characteristics , Voltage 240V AC 10A General Use RH3 Ind. Load RH1 RH2 Rated Load Horse Power , 1/3 HP 1/3 HP - Voltage (V) Res. Load 110 AC SPDT 10A 7A 120V AC -


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PDF 800-262-IDEC 888-317-IDEC rh1b-u RELAY DC12V rh2b-ul IDEC RH2B-UL RH4V2-U "Power Diode"1000v 600 a Y778 120V relay SPDT Make before break RH2B-UT 5v relay 3PDT for pcb mounting
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