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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

Transistor 78 L 05 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Transistor 78 L 05

Abstract: No abstract text available
Text: ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE f . l » e'E , iconductors b b S B T B l DDBlSbS 57fl ■APXroductsPecification NPN 4 GHz wideband transistor BFQ34 , 0.4 -84 23.2 - 500 0.5 177 0.08 58 4.9 78 0.3 -104 15.6 800 , 176 0.08 59 5.0 78 0.2 -112 15.7 800 0.5 160 0.13 63 3.3 63 , 0.06 54 11.8 100 0.4 -93 23.5 500 0.5 175 0.09 60 5.1 78 0.2


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PDF BFQ34 Transistor 78 L 05
Fdd spindle motor circuit

Abstract: 6476FP SLO 365 R 3-phase motor drive fdd motor driver BA6485FP A 3121 IC D0032M fdd spindle controller 64 pin motor drive
Text: transistor ; loMAx=70mA Requires external power transistor ; loyjw=70mA Requires external power transistor ; bult-in auto reset circuit; lovjw=70mA Requires external power transistor ; built-in auto reset circuit; low*x=70mA Built-in power transistor and auto reset circuit: lo v« = 1; A: lock-up detection output Built-in power transistor and auto reset circuit: I o u a x = 1 ; A: lock-up detection output No.3121 No , 11.4 11.4 16.5 O T J -C T C T ' l _ J L J 19.41 2.54 2.54 26.3 2.54 26.3 32.0 37.1 52.3 19.4 19.4


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PDF D0032MÖ V/12V LFS24 QFPS56 QFPS80 QFPS100 Fdd spindle motor circuit 6476FP SLO 365 R 3-phase motor drive fdd motor driver BA6485FP A 3121 IC D0032M fdd spindle controller 64 pin motor drive
it136

Abstract: No abstract text available
Text: TO- 78 TO-71 NF dB M ax BVceo V M in ICBO nA M ax u M Hz @ l (j M in Cobo pF , ±0.2 0.7 ± 0.2 0±1 0.050 Îoœdia, R a L Ac 05 45°C-60°C Max. 11 0 ± 05 All , PACKAGE V BE 1-2 mV Max 2N3810 2N3810A 2N3811 2N3811A 2N5117 2N5118 2N5119 TO- 78 TO- 78 TO- 78 TO- 78 TO- 78 TO- 78 TO- 78 3 1.5 3 1.5 3 5 5 10 5 10 5 3 5 10 100 100 225 225 100 100 50 IT 130 TO- 78 TO-71 2 5 IT130A TO- 78 TO-71 TO- 78 TO-71 TO- 78


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PDF 2N3810 2N3810A 2N3811 2N3811A 2N5117 2N5118 2N5119 IT130A IT131 IT132 it136
2003 - CMT08N80N3P

Abstract: No abstract text available
Text: CMT08N80 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage , Value Unit ID Drain to Current Continuous 7.8 A IDM V ±40 V PD 190 , TJ = 25 40 TL 260 (VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25) Thermal , 1 CMT08N80 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package , ) VDS(on) 11 V 0.1 0.5 2.0 Forward Transconductance (VDS = 100 V, ID = 4.7A) * gFS


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PDF CMT08N80 CMT08N80N3P
transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor SOT-23 marking aeg transistor BF 52 din 82 RAA 0.8
Text: tape ^ Additional marking for specialsa* l ) 06 ® View on flat side of transistor , view on gummed tape 05 » View on round side of transistor , view on gummed tape a) Additional marking "0": Taping , ^2DQRb OGD'iMBS ' BF 883 S Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages , Storage temperature range -65.+150 *C Maximum thermal resistances Junction ambient ^hJA 78 K/W Junction case ^thJC 17.8 K/W T1.2/820.0888 E 2572 b— 05 51 TELEFUNKEN ELECTRONIC BF 883 S 17E ]> b


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PDF T-33-0S- JEDECTO126 transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor SOT-23 marking aeg transistor BF 52 din 82 RAA 0.8
2011 - ML63SA33

Abstract: No abstract text available
Text: 0.3 0.5 0.5 - 0.5 - 0.5 100 78 85 Note : 1. Schottky diode: 1N5817 or 1N5819 (forward , 100 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = 1.8V, IOUT = 10mA, Ta = , 0.9 0.8 35 7 150 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = 2.0V , Max 3.383 6.5 0.9 0.8 35 7 180 0.5 100 78 85 Units V V V V uA uA mA uA KHz % , 5.000 0.8 60 7 210 0.5 100 78 85 P10/11 Max 5.125 6.5 0.9 0.8 Units V V V V


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PDF ML63S ML63S ML63SA ML63SB ML63SC ML63SD ML63SE ML63SF 500mW) ML63SA33
SOT89 MARKING CODE B2

Abstract: No abstract text available
Text: 0.3 0.5 0.5 - 0.5 - 0.5 100 78 85 Note : 1. Schottky diode: 1N5817 or 1N5819 (forward , 6.5 0.9 0.8 35 7 100 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = , , Typ 3.000 0.8 Max 3.075 6.5 0.9 0.8 35 7 150 0.5 100 78 85 Units V V V V uA , = 6.0V VLX= 6.0V , Typ 3.300 0.8 Max 3.383 6.5 0.9 0.8 35 7 180 0.5 100 78 85 , VIN= 4.75V , VIN= 6.0V VLX= 6.0V , Min 4.875 Typ 5.000 0.8 60 7 210 0.5 100 78 85


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PDF ML63S ML63S ML63SA ML63SB ML63SC ML63SD ML63SE ML63SF 500mW) SOT89 MARKING CODE B2
j78 transistor

Abstract: j78 transistor equivalent
Text: (A) 0.05 Pli (W) >15 typ. 18 Gpo (dB) > 7.8 typ. 8.2 ne (%) typ. 50 Z ,;Z L (ö ) see , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package , ) Ic q (A) 0.05 Pu (W) >15 Gpo (dB) > 7.8 nc (%) typ. 50 Zi; ZL (£i) see Figs 6 and 7 , . 1997 Feb 18 71 Philips Semiconductors Product specification NPN microwave power transistor


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PDF LLE15180X j78 transistor j78 transistor equivalent
2005 - AN 6777

Abstract: resistor mrc 4.7k STM67xx 6719 E1 SOT23 SF SOT23-5 18 SOT23 SF SOT23-6 .wy transistor
Text: Transistor Package Mechanical Data mm Symb Typ A A1 A2 b C D E E1 e e1 L N ­ ­ 1.15 ­ ­ 2.90 2.80 1.60 0.95 , SUPPLY (VCC2) MONITOR (STM6717/18/19/20/77/ 78 ). FIXED (FACTORY-PROGRAMMED) RESET THRESHOLDS: 3.08V TO , (STM6777/ 78 /79/80) LOW SUPPLY CURRENT - 11µA (TYP), VCC1 = VCC2 = 3.6V OPERATING TEMPERATURE: ­40°C to 85 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 4. Logic Diagram (STM6777/ 78 ) . , . STM6777/ 78 SOT23-6 Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 9


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PDF STM6717/6718/6719/6720 STM6777/6778/6779/6780 STM6717/18/19/20/77/78) 210ms STM6777/78/79/80) AN 6777 resistor mrc 4.7k STM67xx 6719 E1 SOT23 SF SOT23-5 18 SOT23 SF SOT23-6 .wy transistor
T4148

Abstract: AT-41486 AVANTEK transistor Tbb 38 Avantek UA-152
Text: Noise Silicon Bipolar Transistor Features · · · Low Noise Figure: 1.4 d B typical at 1.0 GHz 1.7 d B , bipolar transistor housed in a low cost, surface mount plastic package. This device is designed for use in , FIGURE AND ASSOCIATED GAIN V I . FREQUENCY I^ Î^ S P L C S 2.34 ± .38 · .100 ± .01 5L 2.54 ± .38 , . 05 Noise Parameters: V c e = 8 V , lc = 10 m A Freq. GHz 0.1 0.5 1.0 1.0 2.0 Frequency, GHz , D llHlIkt 000b4ñl I AT-41486 Low Noise Silicon Bipolar Transistor Absolute Maximum


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PDF AT-41486 T4148 AVANTEK transistor Tbb 38 Avantek UA-152
DAC-08

Abstract: No abstract text available
Text: Excellent Logarithmic Conformance: rB E - 0.3 i l typ Available in Die Form Lo/vNase, ^fetched dial R\P Transistor M T O PIN CONNECTION TO- 78 (H Suffix) GENERAL DESCRIPTION T he M A T03 dual m onolithic PN , applies to T O - 78 not using a heat sink, and L C C ; devices in free air only. For T O - 78 , derate linearly at 6.3 m W /°C above 70°C am bient tem perature; for L C C , derate at 7.8 m W /°C. NOTES ^ u , = 0.4,tf - 1.08e-9,tr = 3e-8, cjc = 40p,vjc = 0.55, mjc = 0.5 ,cjs = 0,ikf = 160m) q.q l n1 n2 n3 n4


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PDF
2002 - 4001 IC

Abstract: MC 7210 camera circuit diagram voltage regulator 78 series 3 pin CS8323 8327 transistor
Text: ±0.25 250 78 3.6 83 83 87 3.174 3.379 5.120 9 1.4 1.3 136.6 146.5 237.7 19.9 19.9 20.3 0.5 1.0 60 , 0.8 68.3 62.6 43.3 39.5 35.7 33.3 32.0 29.7 8.3 8.3 7.9 7.9 7.8 7.8 7.7 7.7 0.5 60 60 , conditions with the capability of automatically controlling the duty ratio from 0% to 83% ( 78 % for 250 kHz , equipment. For applications requiring a high output current, products used with an external transistor (S , : 0.5 µA (max.) Duty ratio: Built-in PWM control circuit External parts: coil, diode, and capacitor only


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PDF S-8323/8327 S-8323 4001 IC MC 7210 camera circuit diagram voltage regulator 78 series 3 pin CS8323 8327 transistor
2002 - transistor 8323

Abstract: No abstract text available
Text: 8.3 8.3 7.9 7.9 7.8 7.8 7.7 7.7 0.5 60 60 115 90 0.3 0.2 12.0 ms V , conditions with the capability of automatically controlling the duty ratio from 0% to 83% ( 78 % for 250 kHz , equipment. For applications requiring a high output current, products used with an external transistor (S , : 0.5 µA (max.) Duty ratio: Built-in PWM control circuit External parts: coil, diode, and capacitor only (a transistor is needed for the S-8327 Series.) · · · · · · · · Oscillation frequency: 30 kHz, 50 kHz


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PDF S-8323/8327 S-8323 transistor 8323
BT 156 transistor

Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor
Text: Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy VHF Transmitters Features: ■High transistor dissipation rating (Pj) = 2 W max. ■Low output capacitance (C0 , planar transistor intended for frequency multiplier service to 175 MHz. The 40637A is particularly , CURRENT . . "C 0.2 A TRANSISTOR DISSIPATION: PT At case temperature up , . MAX. Collector Cutoff Current: With base-emitter junction short-circuited 'ces 12 0 _ 0.5 m A


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PDF 0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor
quad comparator LM3900

Abstract: MC3401 Tachometer circuit LM3900 MC3401P AJR2 motorola LM3900 pin configuration of LM3900 LM3900N LM3900D
Text: Symbol LM2900/ LM3900 MC3301 MC3401 Unit Supply Voltage Vcc +32 +28 +18 V Input Current ( l |n + or ljn - , 0.5 20 - - 0.5 20 - - 0.5 20 - - 0.5 20 - V/ns Unity Gain Bandwidth BW - 4.0 - - 4.0 - - 4.0 - - 4.0 , 0.5 10 0.87 5.0 - 6.0 0.5 10 0.87 5.0 - 5.0 0.5 10 0.87 5.0 5.0 0.5 5.0 0.5 10 0.87 5.0 - mA Supply Current (All Four Amplifiers) Noninverting Inputs Open Noninverting Inputs Grounded 'DO 'dg - 6.9 7.8 10 14 - 6.9 7.8 10 14 - 6.9 7.8 10 14 - 6.9 7.8 10 14 mA Power Supply Rejection (f = 100 Hz) PSR - 55 -


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PDF MC3301 LM2900 MC3401 LM3900 MC3301, MC3401, LM2900, quad comparator LM3900 Tachometer circuit LM3900 MC3401P AJR2 motorola LM3900 pin configuration of LM3900 LM3900N LM3900D
Not Available

Abstract: No abstract text available
Text: 7.8 7.8 7.7 7.7 0.5 60 60 115 90 0.3 0.2 12.0 ms V 4 Output , transistor decreases by increasing L and the efficiency becomes max. at L value. Further increasing L , conditions with the capability of automatically controlling the duty ratio from 0% to 83% ( 78 % for 250kHz , equipment. For applications requiring a high output current, products used with an external transistor (S , transistor is needed for the S-8327 Series.) · · · · · · · · Oscillation frequency: 30kHz, 50kHz, 100kHz, and


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2003 - BJT 2222

Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IRLL014N equivalent BJT 2N2222 dc current gain W6 13A Diode IBJT
Text: becomes P OUT = V BAT × ( I AVG + 0.0025 ) = 78 × ( 0.03479 + 0.0025 ) = 2.9 W Rev. 0.5 7 AN45 , 12 V DC Transistor requirement: From Equation 8: I IN V CEO > V BAT + V DC = 78 + 10 = 88 V , - = 0.5 I OVERLOAD Step 9: Output Overvoltage Protection VBAT max = 78 V (during ringing). See , equivalence number). Since there can be N number of telephones connected Rev. 0.5 7/03 in parallel to the , quickly (depending on the source impedance) as the Rev. 0.5 AN45 input current rises. The VIN


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PDF Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit 2N2222 bjt IRLL014N equivalent BJT 2N2222 dc current gain W6 13A Diode IBJT
MAT03

Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
Text: quiescent current of 2 mA per side, which reduces the MAT03 transistor 's voltage noise. The l /f corner is , ► ANALOG DEVICES Low Noise, Matched Dual PNP Transistor FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 |xV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain , Form PIN CONNECTION TO- 78 (H Suffix) Ci 1 0.3 il typ Bi 2 7 C2 6 B2 El 3 5E2 GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency


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PDF MAT03 MAT03 MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent BC517 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14
Text: Domestic & Overseas Network 74 74 74 75 75 76 76 76 76 77 78 78 79 79 79 80 80 80 81 81 81 81 82 82 82 , BCW30 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor


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PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent BC517 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14
1999 - transistor 8323

Abstract: S-8323A25MC-ELF-T2 S-8323A30MC-ELK-T2
Text: 30 30 ±0.17 ±0.25 250 78 3.6 83 87 3.379 5.120 9 1.4 1.3 146.5 237.7 19.9 20.3 0.5 1.0 60 60 , 0.8 68.3 62.6 43.3 39.5 35.7 33.3 32.0 29.7 8.3 8.3 7.9 7.9 7.8 7.8 7.7 7.7 0.5 60 60 , transistor . The loss of IPK by the switching transistor decreases by increasing L and the efficiency becomes , conditions with the capability of automatically controlling the duty ratio from 0% to 83% ( 78 % for 250kHz , equipment. For applications requiring a high output current, products used with an external transistor (S


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PDF S-8323/8327 S-8323 250kHz transistor 8323 S-8323A25MC-ELF-T2 S-8323A30MC-ELK-T2
2013 - Light Detector laser

Abstract: No abstract text available
Text: ) : C8250-27 Optional Thermal Camera (InSb) ∗1: C9985-04 L a s e r Selection (Accommodates up to 2 , -06 Ob je c tiv e L e n s 5 hole turret Optional 10 hole turret Applicable technique N.A. WD (mm) L , NA50× : A8018 ∗2 Optional 12 M-PLAN-NIR-100× : A11315- 05 OBIRCH / Photo Emission 0.5 Optional 12 OBIRCH / Photo Emission 0.5 NIR100× : A8756-02 ∗2 Optional 12.3 M-PLAN-NIR , Wavelength sensitivity 950 nm to 1600 nm Effective field of view 7.8 mm × 7.8 mm Structure Inverted type


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PDF C8250-27 C9985-04 M10902 C9215-06 Light Detector laser
Not Available

Abstract: No abstract text available
Text: IM U M S T A B L E G A IN vs. F R E Q U E N C Y 0.3 0.5 1.0 Frequency, G H z , Silicon Bipolar Transistor _ Avantek 70 mil Package Features • • • • • QDGfci4H3 , otherwise specified) 1. D im e nsions are 2. Tolerances in .xxx = ±.005 L J E M ITT ER mm .xx = ±.13 Avantek’s A T -005 7 0 is a high performance N P N silicon bipolar transistor housed in a hermetic, high , metallization in the fabrication of these devices. .004 ± ¡002 .10 ± . 05 .495 ±.030 -12.57 ± 3 Ã


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PDF AT-00570
2014 - ESCC 5207 005

Abstract: 2N3810HR 2N3810HRG
Text: 4 56 60 V -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor TO- 78 LCC , for specified level Description The 2N3810HR is a silicon planar epitaxial PNP transistor in TO- 78 , Figure 5. TO- 78 drawing B A C D E F L 2 G 3 5 1 6 7 I 6/11 H , 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data , specification, the latter prevails. for TO- 78 for LCC-6 Table 1. Device summary Device


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PDF 2N3810HR 2N3810HR DocID15385 ESCC 5207 005 2N3810HRG
TRANSISTOR BC 208

Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Text: ALGG BU 208 D Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In , VCES = 1500 V Collector-emitter breakdown voltage 'C ES 0.5 700 4.5 3.2 mA V / c = 100 mA , MHz 'CBO pF S w it c h in g characteristics /. = 4.5 A, L = 1.8 A, Lb = 7 pH, Storage time , 2 597 D -0 2 TELEFUNKEN ELECTRONIC 17E » fi^eoo^b OQOTMbl 4 m k L G G BU 208 D V *42*3 * 1 | S P '0 - > V iM S 05 *C r · 0 . Ot 10 A ar: k > S V i\ v. s N V


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PDF r-33-c? TRANSISTOR BC 208 bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
2002 - sd 431 transistor

Abstract: MA737 electrolytic capacitor 16V XC6368B101MR CR54 XC6368 XC6368A333MR XC6368A332MR RB5-10
Text: Frequency Maximum Duty Ratio PFM Duty Ratio (Note 3) 38 0.5 345 µA µA kHz Same as IDD1 78 , =1.2V VDD=2.85V, CE=0V, FB=0V Same as IDD1 0.7 190 34 0.5 345 µA µA kHz Same as IDD1 78 , Frequency Maximum Duty Ratio PFM Duty Ratio (Note 3) 20 0.5 115 µA µA kHz Same as IDD1 78 , (Note 3) 20 0.5 115 µA µA kHz Same as IDD1 78 15 85 25 92 35 % % CE , Transistor SD L VOUT CB EXT VDD CE VOUT CL Tantalum Tr VIN RB RL CIN GND


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PDF 300kHz( XC6368) NSOT-25 XC6367/68 10mA100mA 100mA XC6368A333MR 300kHz 100mA1mA sd 431 transistor MA737 electrolytic capacitor 16V XC6368B101MR CR54 XC6368 XC6368A333MR XC6368A332MR RB5-10
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