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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1308BCS8#TR Linear Technology LT1308A and B - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1308BCS8#TRPBF Linear Technology LT1308A and B - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1308CS8 Linear Technology LT1308 - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1308BIS8#PBF Linear Technology LT1308A and B - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1308BIS8 Linear Technology LT1308A and B - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1308BIS8#TR Linear Technology LT1308A and B - Single Cell High Current Micropower 600kHz Boost DC/DC Converter; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

Transistor 1308 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: R aM T R O N \ c o f^ p o ira rio M FM 1008/1108/1208/ 1308 /1408 FRAM ® 1,024-16,384 , packaging. Description The FM 1008, 1108, 1208, 1308 and 1408 are a family of nonvolatile 128 x 8, 256 x , 1208 FMx 1308 FMx 1408 Organization 128x8 256x8 512x8 1024x8 2048 x 8 P in i NC A? a a Pin 23 NC NC , periodically sampled and not 100% tested. Theory o f Operation The FM 1008, 1108, 1208, 1308 and 1408 FRAM memories use a two transistor , two capacitor memory cell structure illustrated below. During a write


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PDF 384-Bit 100ns 200ns 24-Pin 24-Pin)
2003 - Power UHF amplifiers 432 MHz

Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor , Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES · , 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at , Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 THERMAL , specification UHF power LDMOS transistor BLF2022-125 APPLICATION INFORMATION RF performance at Th = 25


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PDF M3D792 BLF2022-125 OT634A SCA75 613524/03/pp8 Power UHF amplifiers 432 MHz Transistor 1308 transistor 1334 SOT634A BLF2022-125
2001 - mar-08 transistor

Abstract: BLF2022-125
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor , LDMOS transistor BLF2022-125 PINNING FEATURES · 100 % tested under single carrier 3GPP W-CDMA , average W-CDMA LDMOST power transistor designed for common source class AB operation in a SOT634 ceramic , power LDMOS transistor BLF2022-125 LIMITING VALUES In accordance with the Absolute Maximum Rating , Specification UHF power LDMOS transistor BLF2022-125 APPLICATION INFORMATION RF performance at Th = 25


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PDF M3D792 BLF2022-125 OT634 SCA73 125104/00/04/pp7 mar-08 transistor BLF2022-125
2001 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor , LDMOS transistor FEATURES · 100 % tested under single carrier 3GPP W-CDMA conditions · Excellent , transistor designed for common source class AB operation in a SOT634 ceramic package for CDMA, W-CDMA and , UHF power LDMOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , 3 Philips Semiconductors Preliminary Specification UHF power LDMOS transistor BLF2022


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PDF M3D792 BLF2022-125 OT634 SCA73 125104/00/04/pp7
LT1949-1

Abstract: No abstract text available
Text: 50 TEMPERATURE (°C) 75 1308 • G08 1308 G07 Oscillator Frequency vs Temperature 100 1308 • G09 LT1308A Quiescent Current vs Temperature Feedback Pin Voltage vs Temperature , 50 TEMPERATURE (°C) 75 100 1308 • G10 1.22 1.21 130 1.20 120 1.19 110 450 400 –50 160 VFB (V) QUIESCENT CURRENT (µA) 800 FREQUENCY (kHz) 2.0 1308 G06 FB, LBI Bias Current vs Temperature 50 30 1.0 0.5 1.5 SWITCH CURRENT (A) 1308 â


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PDF LT1308A/LT1308B 600kHz 800mA LT1308A) LT1308B) 300mV LT1308 200mV 14-Lead LT1949-1
2010 - MIDCOM 31105R

Abstract: WE MIDCOM 31105R 3V to 350V dc dc converter step up DC DC converter in 6v out 9V LQH6C4R7 dc dc converter marking f14 f13 sot-23 LT1949-1 Transistor 1308 LT1308A
Text: 100 ­25 0 25 50 TEMPERATURE (°C) 75 1308 · G08 1308 G07 Oscillator Frequency vs Temperature 100 1308 · G09 LT1308A Quiescent Current vs Temperature Feedback Pin Voltage vs , ) 800 FREQUENCY (kHz) 2.0 1308 G06 FB, LBI Bias Current vs Temperature 50 30 1.0 0.5 1.5 SWITCH CURRENT (A) 1308 · G05 SHDN Pin Bias Current vs Voltage 40 0 ­2.5 0 25 50 TEMPERATURE (°C) 75 100 1308 · G10 100 ­50 ­25 0 25 50 TEMPERATURE (°C


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PDF LT1308A/LT1308B 600kHz 800mA LT1308A) LT1308B) 300mV LT1308 200mV 14-Lead MIDCOM 31105R WE MIDCOM 31105R 3V to 350V dc dc converter step up DC DC converter in 6v out 9V LQH6C4R7 dc dc converter marking f14 f13 sot-23 LT1949-1 Transistor 1308 LT1308A
1999 - dc dc converter marking f14

Abstract: MIDCOM 31105R LP 1.5uH WE MIDCOM 31105R 3V to 350V dc dc converter WE MIDCOM 74 LT1949-1 LT1308B LT1308ACS8 LT1308A 10BQ015
Text: G04 1308 G06 FB, LBI Bias Current vs Temperature 50 Low Battery Detector Reference vs , ) 75 195 ­50 100 ­25 0 25 50 TEMPERATURE (°C) 75 1308 · G08 1308 G07 Oscillator Frequency vs Temperature 100 1308 · G09 LT1308A Quiescent Current vs Temperature , 1.23 150 140 ­2.5 0 25 50 TEMPERATURE (°C) 75 100 1308 · G10 1.22 1.21 130 , FREQUENCY (kHz) 2.0 1308 · G05 SHDN Pin Bias Current vs Voltage 40 1.0 0.5 1.5 SWITCH


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PDF LT1308A/LT1308B 600kHz 308A/LT1308B LT1308 LT1308A LT1308B 800mA Opera200mA OT-23 LT1615 dc dc converter marking f14 MIDCOM 31105R LP 1.5uH WE MIDCOM 31105R 3V to 350V dc dc converter WE MIDCOM 74 LT1949-1 LT1308ACS8 10BQ015
2009 - BLA6H0912-500

Abstract: No abstract text available
Text: BLA6H0912-500 LDMOS avionics radar power transistor Rev. 01 - 5 March 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics , substances (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 , Semiconductors LDMOS avionics radar power transistor 6. Characteristics Table 6. DC characteristics Tj = , BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 7. Application information


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PDF BLA6H0912-500 BLA6H0912-500
1999 - MIDCOM 31105R

Abstract: step up DC DC converter in 6v out 9V FCX458 31105r f21 diode sot23 3V to 350V dc dc converter negative dc dc sepic 5V converter midcom LQH6C4R7 AVX TAJC476M010
Text: (%) 80 100 1308 · G05 0 0 1.0 0.5 1.5 SWITCH CURRENT (A) 2.0 1308 G06 , ­50 100 0 25 50 TEMPERATURE (°C) 75 1308 · G08 1308 G07 Oscillator Frequency vs Temperature 100 1308 · G09 LT1308A Quiescent Current vs Temperature Feedback Pin Voltage vs , 25 50 TEMPERATURE (°C) 75 100 1308 · G10 1.22 1.21 130 1.20 120 1.19 , 100 ­50 ­25 0 25 50 TEMPERATURE (°C) 75 100 1308 · G11 1.18 ­50 ­25 0 25


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PDF LT1308A/LT1308B 600kHz 800mA LT1308A) LT1308B) 300mV LT1308 200mV B200mA MIDCOM 31105R step up DC DC converter in 6v out 9V FCX458 31105r f21 diode sot23 3V to 350V dc dc converter negative dc dc sepic 5V converter midcom LQH6C4R7 AVX TAJC476M010
1999 - marking A1S TRANSISTOR

Abstract: LQH6N4R7 dc dc converter marking f14 LMK432BJ226 sn1308 Load cell gsm LT1308A LT1308ACF LT1308B TAJC476M010
Text: /DIV 1308 G05 85°C 300 25°C 200 ­40°C 100 55 50 1 10 100 LOAD CURRENT (mA) 1000 0 0 1.0 0.5 1.5 SWITCH CURRENT (A) 2.0 1308A/B G04 1308 G06 4 LT1308A , ONLY 4 GND 1308 BD Figure 2. LT1308A/LT1308B Block Diagram 5 LT1308A/LT1308B U W , junctions to 300mV. Because this is not enough to saturate either transistor , FB can be at a higher voltage , ) 1308 F03 Figure 3. LT1308A Exhibits Burst Mode Operation Output Voltage Ripple at 50mA Load


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PDF LT1308A/LT1308B 600kHz 800mA LT1308A) LT1308B) 300mV LT1308 200mV OT-23 marking A1S TRANSISTOR LQH6N4R7 dc dc converter marking f14 LMK432BJ226 sn1308 Load cell gsm LT1308A LT1308ACF LT1308B TAJC476M010
1999 - 2SC4903

Abstract: Hitachi DSA002755
Text: 2SC4903 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features · High gain bandwidth product fT = 6 GHz Typ · High gain, low noise figure PG = 12.0 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline 2SC4903 Absolute Maximum Ratings (Ta = 25°C) Item Collector , 0.517 0.462 0.417 0.384 0.359 0.336 ANG. ­23.3 ­43.6 ­62.0 ­75.7 ­88.0 ­98.0 ­107.3 ­115.9 ­122.7 ­ 130.8 S21 MAG. 11.28 10.03 8.59 7.36 6.34 5.52 4.88 4.39 3.97 3.63 ANG. 161.2 144.3 130.8 121.0 112.8 106.4


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PDF 2SC4903 2SC4903 Hitachi DSA002755
1999 - dc dc converter marking f14

Abstract: LQH6N4R7 LQH6C4R7 IR10BQ015
Text: /DIV AC COUPLED ILOAD 1A 0A VIN = 3.6V VOUT = 5V COUT = 220µF 100µs/DIV 1308 G05 Switch Saturation , ) 2.0 1308 G06 U U U LT1308A/LT1308B PIN FUNCTIONS LBI (Pin 7): Low-Battery Detector , saturate either transistor , FB can be at a higher voltage than VIN. When there is no load, FB rises , 600kHz OSCILLATOR *HYSTERESIS IN LT1308A ONLY ­ 4 GND 1308 BD Figure 2. LT1308A/LT1308B Block , (CIRCUIT OF FIGURE 1) 1308 F03 6 U W U U Figure 3. LT1308A Exhibits Burst Mode Operation


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PDF LT1308A/LT1308B 600kHz 800mA LT1308A) LT1308B) 300mV LT1308 200mV 308A/LT1308B dc dc converter marking f14 LQH6N4R7 LQH6C4R7 IR10BQ015
2007 - 1348 transistor

Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 Transistor 1308 Transistor 1507 ITO-220 TSC148DCZ TSC148DCI TSC148D
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY , Forward Single Transistor Low Power Converters Ordering Information Part No. TSC148DCZ C0 TSC148DCI , Power Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions , Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static , /6 Version: A07 TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 Mechanical


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PDF TSC148D O-220 ITO-220 TSC148DCZ TSC148DCI 50pcs 1348 transistor TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 Transistor 1308 Transistor 1507 ITO-220 TSC148D
2007 - TRANSISTOR K 1507

Abstract: 1348 transistor Transistor 1507 Transistor 1308 marking code 0632 tp 220 n
Text: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3 , Silicon Transistor Ordering Information Part No. TSC236CZ C0 TSC236CI C0 Package TO-220 ITO , C C 1/6 Version: A07 TSC236 High Voltage NPN Transistor Electrical Specifications (Ta = , % 2/6 Version: A07 TSC236 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = , Operating Area 3/6 Version: A07 TSC236 High Voltage NPN Transistor TO-220 Mechanical Drawing


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PDF TSC236 O-220 ITO-220 TSC236CZ TSC236CI 50pcs TRANSISTOR K 1507 1348 transistor Transistor 1507 Transistor 1308 marking code 0632 tp 220 n
Not Available

Abstract: No abstract text available
Text: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3 , Silicon Triple Diffused Type  NPN Silicon Transistor Ordering Information Part No. Package , NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions , , duty cycle 2% 2/6 Version: A07 TSC236 High Voltage NPN Transistor Electrical , Figure 6. Safety Operating Area 3/6 Version: A07 TSC236 High Voltage NPN Transistor TO


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PDF TSC236 O-220 ITO-220 TSC236CZ 50pcs TSC236CI
2004 - Not Available

Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear , Epitaxial Silicon Transistor Electrical Characteristics Figure 1. DC Current Gain Figure 2 , 80 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Typical Performance Characteristics BDW94/C PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 , ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 Â


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PDF BDW94/C BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C
2005 - Not Available

Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power , 1 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor January 2005 Symbol , % Pulsed 2 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor , www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Typical Performance Characteristics BDW94/C PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10


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PDF BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C BDW94/C
2005 - Transistor 1308

Abstract: FJC1308 FJC1963
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications · Complement to , FJC1308 PNP Epitaxial Silicon Transistor July 2005 Classification P Q R hFE 80 ~ 180 , Package Reel Size Tape Width Quantity 1308 FJC1308 SOT-89 13" - 4,000 FJC1308 Rev. B1 2 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor hFE , [°C], AMIBIENT TEMPERATURE 3 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor


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PDF FJC1308 FJC1963 OT-89 FJC1308 Transistor 1308 FJC1963
2001 - NTE15041

Abstract: NTE15032 NTE15033 NTE15040 161V
Text: NTE15032, NTE15033, NTE15040, & NTE15041 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Industry , . . . . . . . . . . . . . . . . . . . . . 27W Maximum Power Transistor Junction Temperature, TJ . . , Saturation Voltage Typ 129.2 130.0 130.8 NTE15033 Load Regulation Min VIN = VAC, IO = 500mA, TC = ­20° to +100°C VCE(sat) IC = 1A, IB = 10mA VCEO hFE Power Transistor Thermal Resistance


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PDF NTE15032, NTE15033, NTE15040, NTE15041 65msec NTE15041 NTE15032 NTE15033 NTE15040 161V
2005 - BDW93

Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application · Power , www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor January 2005 Symbol VCEO(sus) ICBO TC = , Epitaxial Silicon Transistor Electrical Characteristics Figure 1. DC Current Gain Figure 2 , 80 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Typical Performance Characteristics BDW94/C PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220 4.50 ±0.20 2.80


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PDF BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C BDW94/C BDW94 BDW94A BDW94B BDW94C
2005 - Not Available

Abstract: No abstract text available
Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to , www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor July 2005 Classification P Q R hFE , Device Package Reel Size Tape Width Quantity 1308 FJC1308 SOT-89 13” - 4,000 2 FJC1308 Rev. B1 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor hFE , Voltage -0.0 -0.0 -1 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor


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PDF FJC1308 FJC1963 OT-89 FJC1308
2000 - transistor b 1238

Abstract: NTE1777 NTE1776 NTE1778
Text: NTE1776 thru NTE1778 Integrated Circuit TV Fixed Voltage Regulator Features: D Triple Diffused Darlington Transistor Chips Incorporated D Compact Plastic Package with Industry Standard Reliability D , . . . . . . . . 27W Maximum Power Transistor Junction Temperature, TJ . . . . . . . . . . . . . . . , Symbol VOUT Test Conditions DC Current Gain Unit 122.2 123.0 123.8 V 129.2 130.0 130.8 , Power Transistor Thermal Resistance RthJC Between Junction and Stem Upper Surface ­ 1.8


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PDF NTE1776 NTE1778 65msec transistor b 1238 NTE1777 NTE1778
2000 - Not Available

Abstract: No abstract text available
Text: KSD1943 KSD1943 High Power Transistor 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO , .60 ±0.10 (1.70) 1.30 ­0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00 , Product Folder - Fairchild P/N KSD1943 - NPN Epitaxial Silicon Transistor SEARCH | Parametric | Cross , products space space space KSD1943 Products groups NPN Epitaxial Silicon Transistor Analog and Mixed Signal


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PDF KSD1943 O-220 KSD1943TU O-220
2012 - TRANSISTOR K 1507

Abstract: 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 2 (D PAK) Pin , Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Integrated Anti-parallel , High Voltage Fast-Switching NPN Power Transistor Thermal Performance Parameter TO-220 Thermal , , duty cycle 2% 2/7 Version: C12 TSC148D High Voltage Fast-Switching NPN Power Transistor , : C12 TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 Mechanical Drawing DIM


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PDF TSC148D O-220 ITO-220 O-263 TSC148DCZ TSC148DCI TSC148DCM O-263 TRANSISTOR K 1507 1348 transistor TRANSISTOR D 1785 silicon power diode to263 3A fast-switching diode HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a marking code 0632 Transistor 1507 POWER TRANSISTOR TO-220
2000 - Not Available

Abstract: No abstract text available
Text: KSD5018 KSD5018 Built-in Resistor at B-E for Motor Drive · High Voltage Power Darlington TR 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum , 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 ­0.05 +0.10 9.20 ±0.20 (1.46) 13.08 , Rev. E Product Folder - Fairchild P/N KSD5018 - NPN Silicon Darlington Transistor SEARCH , products >> Home find products space space space KSD5018 Products groups NPN Silicon Darlington Transistor


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PDF KSD5018 O-220
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