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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK065U65Z TK065U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK5R1P08QM TK5R1P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
TK190E65Z TK190E65Z ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
TK155E65Z TK155E65Z ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
TK090U65Z TK090U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

Transistor 13007 Datasheets Context Search

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transistor 13007

Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
Text: ALÛG 9electronic TE 13006 * TE 13007 T- 33-13 · Short switching times · Power dissipation 100 W , case T1.2/718.0888 E »18 TE 13006 'C E O TE 13007 400 700 9 8 ^ CES 'E B O 300 600 , -33-13 IALGG TE 13006 ·TE 13007 Characteristics Tcs|s ~ 25 °C, unless otherwise specified Collector cut-off current = 600 V = 700 V 'C E ' = 150°C, = 600 V = 700 V 'C E ' TE TE TE TE 13006 13007 13006 13007 Min , Collector-emitter breakdown voltage /c = 100 mA, t c *=125 mH TE 13006 Fig. 1.2 TE 13007 Emitter-base breakdown


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PDF 15A3DIN transistor 13007 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
1999 - Transistor 13007

Abstract: T 13007 13007 TRANSISTOR 13007* transistor NPN Transistor 13007 13007 KSE13007 equivalent 13007 2 transistor 13007 datasheet KSE13006
Text: KSE13006/ 13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13006 : KSE13007 Collector Emitter Voltage : KSE13006 : KSE13007 , cycle2% Rev. B ©1999 Fairchild Semiconductor Corporation µs µs µs KSE13006/ 13007 NPN SILICON TRANSISTOR KSE13006/ 13007 NPN SILICON TRANSISTOR TRADEMARKS The following are


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PDF KSE13006/13007 O-220 KSE13006 KSE13007 Transistor 13007 T 13007 13007 TRANSISTOR 13007* transistor NPN Transistor 13007 13007 KSE13007 equivalent 13007 2 transistor 13007 datasheet KSE13006
2001 - 13007 h3

Abstract: tr 13007 13007 13007 2 transistor mje13006 ste+13007 13007 switching application
Text: MJE13006/ 13007 MJE13006/ 13007 High Voltage Switch Mode Applications · High Speed Switching · , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP , MJE13006/ 13007 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE , MJE13006/ 13007 Typical Characteristics (Continued) 100 90 PC[W], POWER DISSIPATION 80 70 60 50 , . Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13006/ 13007


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PDF MJE13006/13007 O-220 MJE13006 MJE13007 MJE13007 13007 h3 tr 13007 13007 13007 2 transistor mje13006 ste+13007 13007 switching application
2000 - transistor E 13007

Abstract: TOP 13007 KSE13007H3SM transistor 13007 KSE13007 NPN Transistor 13007 KSE13007H2SMTU
Text: KSE13006/ 13007 KSE13006/ 13007 High Voltage Switch Mode Application · High Speed Switching · , Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP , KSE13006/ 13007 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE , KSE13006/ 13007 Typical Characteristics (Continued) 100 90 PC[W], POWER DISSIPATION 80 70 60 50 , / 13007 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3


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PDF KSE13006/13007 O-220 KSE13006 KSE13007 KSE13007 KSE13007H1SM KSE13007SMTU KSE13007H2SM transistor E 13007 TOP 13007 KSE13007H3SM transistor 13007 NPN Transistor 13007 KSE13007H2SMTU
2000 - e13007

Abstract: transistor e13007 E13007 2 e13007 1 E13007 - 1 transistor E13007 2 fairchild E13007 transistor E13007 TO-220 E13007- 2 E13006
Text: KSE13006/ 13007 KSE13006/ 13007 High Voltage Switch Mode Application · High Speed Switching · , .Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO , Fairchild Semiconductor International Rev. A, February 2000 KSE13006/ 13007 VBE(sat), VCE(sat)[V , KSE13006/ 13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 , 2000 KSE13006/ 13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10


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PDF KSE13006/13007 O-220 KSE13006 KSE13007 e13007 transistor e13007 E13007 2 e13007 1 E13007 - 1 transistor E13007 2 fairchild E13007 transistor E13007 TO-220 E13007- 2 E13006
2001 - tr 13007

Abstract: transistor 13007 T 13007 D 13007 NPN Transistor 13007 13007* transistor MJE13006 13007 13007 switching application data sheet 13007
Text: MJE13006/ 13007 MJE13006/ 13007 High Voltage Switch Mode Application · High Speed Switching · , .Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13006/ 13007 VBE(sat), VCE(sat)[V , MJE13006/ 13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 , MJE13006/ 13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 ­0.05


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PDF MJE13006/13007 O-220 MJE13006 MJE13007 tr 13007 transistor 13007 T 13007 D 13007 NPN Transistor 13007 13007* transistor MJE13006 13007 13007 switching application data sheet 13007
transistor E 13007

Abstract: 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
Text: KSE13006/ 13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Sw itching · Suitable fo r Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS C , o n d u c to r TM KSE13006/ 13007 POWER DERATING NPN SILICON TRANSISTOR 1 D IS S IP A , s e m ic o n d u c t o r TM >31999 F airchild S e m iconductor C orporation KSE13006/ 13007 NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE COLLECTOR EMITTER SATURATION VOLTAGE 0.2


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PDF KSE13006/13007 KSE13006 KSE13007 KSE13006 transistor E 13007 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
2000 - FAIRCHILD E 13007

Abstract: transistor E 13007 E 13007 13007 13007 TRANSISTOR FAIRCHILD E 13007- 1 tr 13007 kse13007 KSE13007 equivalent KSE13006
Text: KSE13006/ 13007 KSE13006/ 13007 High Voltage Switch Mode Application · High Speed Switching · , .Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO , Fairchild Semiconductor International Rev. A1, December 2000 KSE13006/ 13007 VBE(sat), VCE(sat)[V , KSE13006/ 13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 , 2000 KSE13006/ 13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10


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PDF KSE13006/13007 O-220 KSE13006 KSE13007 FAIRCHILD E 13007 transistor E 13007 E 13007 13007 13007 TRANSISTOR FAIRCHILD E 13007- 1 tr 13007 kse13007 KSE13007 equivalent KSE13006
E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Text: TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS SWITCHMODETM NPN Bipolar Power Transistor For Switching , 13007 Unit Vdc Vdc Vdc Ade Ade Ade V C A S E 221A -06 TO-220AB MJE13007 400 700 9.0 e.o 16 4.0 8.0 , characteristics - are given to facilitate "w orst case" design. Motorola Bipolar Power Transistor Device Data , Width £ 300 us, Duty Cycle S 2.0%. 3-668 Motorola Bipolar Power Transistor Device Data , Gain Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3-669 M JE13007 M


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PDF JE13007 JF13007 MJE/MJF13007 T0-220 MJF13007 E13007 E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 mj 13007 transistor E 13007
2002 - E 13007

Abstract: E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2002.08.14 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description · High Voltage, High Speed Power Switch · Switch Regulators · PWM Inverters and Motor Controls · Solenoid and Relay Drivers · Deflection Circuits TO-220 Absolute Maximum Ratings (Ta=25°C) · Maximum , MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H MJ E 13007 C Control Code Date


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PDF HE200207 HMJE13007 O-220 E 13007 E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications
2003 - E 13007

Abstract: transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2003.07.21 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description · High Voltage, High Speed Power Switch · Switch Regulators · PWM Inverters and Motor Controls · Solenoid and Relay Drivers · Deflection Circuits TO-220 Absolute Maximum Ratings (Ta=25°C) · Maximum , MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H MJ E 13007 C Control Code Date


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PDF HE200207 HMJE13007 O-220 E 13007 transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007
2007 - sec 13007

Abstract: E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207
Text: HI-SINCERITY Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description · High Voltage, High Speed Power Switch · Switch Regulators · PWM Inverters and Motor Controls · Solenoid and Relay Drivers · Deflection Circuits TO-220 Absolute Maximum Ratings (TA=25°C) · Maximum , MJ E 13007 C D Date Code Control Code H M I K 3 G Pin Style: 1.Base 2


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PDF HE200207 HMJE13007 O-220 10sec sec 13007 E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207
2000 - transistor d 13007

Abstract: 14723 temic
Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due to the ramp-control feature and a very low quiescent current an external switch transistor for VS is not required. Electrostatic sensitive device , specifications 13007 1 10 8 (9) Rev. A5, 19-Jan-00 U7004B Ozone Depleting Substances Policy


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PDF U7004B U7004B D-74025 19-Jan-00 transistor d 13007 14723 temic
1995 - E 13007-1

Abstract: transistor E 13007 13007 applications comparator circuit using op-amp AN-344 C1995 LF13006 LF13007 LF411 LF412
Text: 059 1 029 1 014 1 007 GAIN ( 13007 ) 10 12 17 30 40 48 5 45 57 GAIN (LF13007) 11 3 67 , an external pass transistor can be added to A2's output A common need in data acquisition systems


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PDF LF13006 LF13007 E 13007-1 transistor E 13007 13007 applications comparator circuit using op-amp AN-344 C1995 LF411 LF412
2003 - j 13007

Abstract: 731 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. Order this document by MRFG35010MT1/D Advance Information The RF GaAs Line MRFG35010MT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS , 143.33 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29


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PDF MRFG35010MT1/D MRFG35010MT1 MRFG35010MT1 j 13007 731 motorola
2000 - Not Available

Abstract: No abstract text available
Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Ω matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due to the ramp-control feature and a very low quiescent current an external switch transistor for VS is not required. Electrostatic , according to DIN specifications 13007 1 8 (9) 10 Rev. A5, 19-Jan-00 U7004B Ozone Depleting


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PDF U7004B U7004B D-74025 19-Jan-00
1999 - 14723 temic

Abstract: No abstract text available
Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-W matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due to the ramp-control feature and a very low quiescent current an external switch transistor for VS is not required. Electrostatic sensitive device , drawings according to DIN specifications 13007 1 10 8 (9) Rev. A5, 19-May-99 U7004B Ozone


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PDF U7004B U7004B D-74025 19-May-99 14723 temic
2003 - MOTOROLA 944

Abstract: MOTOROLA TRANSISTOR 935 A113 MRFG35010MT1 PLD15 motorola 4714 SPS 13007 13007 502 731 motorola
Text: MOTOROLA Order this document by MRFG35010MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35010MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. 3.5 GHz, 9 W, 12 V POWER FET GaAs , 0.938 130.07 0.702 ­3.89 0.024 ­2.38 0.786 143.87 3.9 0.938 129.29


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PDF MRFG35010MT1/D MRFG35010MT1 MOTOROLA 944 MOTOROLA TRANSISTOR 935 A113 MRFG35010MT1 PLD15 motorola 4714 SPS 13007 13007 502 731 motorola
2003 - s 0938

Abstract: 13007 502 DSA00480160
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. · Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 , 143.33 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29


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PDF MRFG35010MT1/D MRFG35010MT1 s 0938 13007 502 DSA00480160
2000 - transistor d 13007

Abstract: D 13007 K transistor SSO20 U7004B U7004B-MFS U7004B-MFSG3 DECT telephone schematic W 13007 TRANSISTOR
Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50- matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due to the ramp-control feature and a very low quiescent current an external switch transistor for VS is not required. Electrostatic sensitive device , 20 5.85 0.15 6.6 6.3 11 technical drawings according to DIN specifications 13007


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PDF U7004B U7004B D-74025 06-Sep-00 transistor d 13007 D 13007 K transistor SSO20 U7004B-MFS U7004B-MFSG3 DECT telephone schematic W 13007 TRANSISTOR
2003 - s 0938

Abstract: 1348 c23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA This document contains information on a new product. Specifications and information herein are subject to change without notice. Advance Information The RF GaAs Line MRFG35010MT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 , 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29 128.60


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PDF MRFG35010MT1 MRFG35010MT1 s 0938 1348 c23
2007 - CGH27015S

Abstract: No abstract text available
Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015S ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is , -11.589 0.54421 -169.19 1.8 GHz 0.87642 -174.54 3.349 74.439 0.04712 - 13.007


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PDF CGH27015S CGH27015S CGH2701
2007 - CGH27015S

Abstract: 003536 54-619 msl 9351 06752
Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH27015S is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015S ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is , -7.0203 -8.6058 -10.125 -11.589 - 13.007 -14.385 -15.729 -17.043 -18.331 -19.597 -20.841 -22.068 -23.277


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PDF CGH27015S CGH27015S CGH2701 003536 54-619 msl 9351 06752
2007 - transistor E 13007

Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251
Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35015S is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015S ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , 2.6159 0.35323 -1.698 -3.5887 -5.3542 -7.0203 -8.6058 -10.125 -11.589 - 13.007 -14.385 -15.729 -17.043


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PDF CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251
2005 - 13007 502

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 3, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts , 130.07 0.702 −3.89 0.024 −2.38 0.786 143.87 3.9 0.938 129.29 0.694 â


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PDF MRFG35010MT1 13007 502
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