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Part Manufacturer Description Datasheet Download Buy Part
LTC1100ACJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Instrumentation Amplifier
LTC1100AMJ8/883B Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100AMJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100ACJ8 Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100ACN Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier
LTC1100ACN8 Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, PDIP8, MINI, PLASTIC, DIP-8, Instrumentation Amplifier

Toshiba transistor Ic 100A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract: No abstract text available
Text: RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver , ) COLLECTOR CURRENT IC (mA) RN1970FS IC - VI(ON) 100 Ta= 100Â °C 10 25 1 -25 EMITTER COMMON , Ta= 100Â °C 10 EMITTER COMMON IC / IB=20 1 0.1 100 RN1971FS 25 -25 1 10 , (sat) - IC 1000 Ta= 100Â °C COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT


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PDF RN1970FS RN1971FS RN2970FS, RN2971FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2912FS,RN2913FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , ˆ’5 −50 mA ― Weight:0.001g (typ.) V IC ― TOSHIBA Maximum Ratings (Ta = 25 , ) COLLECTOR CURRENT IC (mA) -100 EMITTER COMMON VCE=-0.2V -1000 Ta= 100 °C 25 -25 -100 , -100 Ta= 100 °C -10 EMITTER COMMON IC /IB=20 -1 -0.1 hFE - IC RN2913FS -100 VCE(sat) - IC COLLCTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1000 Ta= 100 °C 1000 -25


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PDF RN2912FS RN2913FS RN1912FS, RN1913FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , ) RN1110FS 10000 Ta= 100 °C COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 25 , ) 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) IC - VI(OFF) Ta= 100 °C 10 25 , Ta= 100 °C 10 EMITTER COMMON IC / IB=20 hFE - IC RN1111FS 1000 10 100 VCE(sat) - IC 1000 Ta= 100 °C COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT


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PDF RN1110FS RN1111FS RN2110FS, RN2111FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , „¦ 2004-02-27 RN2972FS,RN2973FS IC - VI(ON) RN2972FS RN2972FS Ta= 100 °C -10 25 -1 -25 , -1.4 IC - VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta= 100 °C -10 25 -1 -25 -0.1 , EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 , VCE(sat) - IC COLLCTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1000 Ta= 100 °C 1000


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PDF RN2972FS RN2973FS RN1972FS, RN1973FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , =-0.2V -0.1 -0.1 RN2113FS Ta= 100 °C -25 25 -100 EMITTER COMMON VCE=-5V -100 0 IC - , VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta= 100 °C -10 25 -1 -25 -0.1 -0.1 , =-5V 10 -0.1 -1 -10 -100 -100 Ta= 100 °C -10 EMITTER COMMON IC /IB=20 -1 -0.1 , Ta= 100 °C -25 25 EMITTER COMMON IC /IB=20 -1 -0.1 -1 -10 COLLECTOR CURRENT IC (mA


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PDF RN2112FS RN2113FS RN1112FS, RN1113FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , „¦ 2004-03-03 RN1907FS~RN1909FS (Q1,Q2 Common) RN1907FS RN1907FS IC - VI(ON) Ta= 100 °C 10 25 1 , COLLECTOR CURRENT IC (µA) Ta= 100 °C 10 25 1 0.4 0.6 0.8 1 1.2 1.4 INPUT , =0.2V IC - VI(OFF) COMMON EMITTER VCE=5V 1000 Ta= 100 °C 25 -25 100 10 0.1 0.1 1 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 Ta= 100 °C 25 1 -25 COMMON


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PDF RN1907FS RN1909FS RN1908FS RN1908FS RN1907FS RN2907FS RN2909FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , 2004-02-27 RN1967FS~RN1969FS (Q1,Q2 common) RN1967FS RN1967FS IC - VI(ON) Ta= 100 °C 10 25 1 , CURRENT IC (µA) 10000 Ta= 100 °C 10 25 1 0.4 0.6 0.8 1 1.2 1.4 INPUT , =0.2V IC - VI(OFF) COMMON EMITTER VCE=5V 1000 Ta= 100 °C 25 -25 100 10 0.1 0.1 1 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 Ta= 100 °C 25 1 -25 COMMON


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PDF RN1967FS RN1969FS RN1968FS RN1968FS RN1967FS RN2967FS RN2969FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , RN2967FS~RN2969FS (Q1,Q2 common) RN2967FS RN2967FS IC - VI(ON) Ta= 100 °C -10 25 -1 -25 , Ta= 100 °C 25 -25 EMITTER COMMON VCE= -0.2V -1 -10 -1 -1.2 -1.4 IC - VI(OFF , COLLECTOR CURRENT IC (µA) EMITTER COMMON VCE= -0.2V -10 Ta= 100 °C -1 -0.1 -0.1 -0.8 , ) DC CURRENT GAIN hFE Ta= 100 °C 25 -25 100 EMITTER COMMON VCE= -5V EMITTER COMMON IC


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PDF RN2967FS RN2969FS RN2968FS RN2967FS RN2968FS RN1967FS RN1969FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , RN2907FS~RN2909FS RN2907FS RN2907FS IC - VI(ON) Ta= 100 °C -10 25 -1 -25 EMITTER , -0.2 -100 RN2908FS COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -10 Ta= 100 , CURRENT IC (µA) EMITTER COMMON VCE= -0.2V -10 Ta= 100 °C -1 -0.1 -0.1 -0.8 EMITTER , hFE Ta= 100 °C 25 -25 100 EMITTER COMMON VCE= -5V EMITTER COMMON IC / IB=20 -100


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PDF RN2907FS RN2909FS RN2908FS RN2908FS RN2907FS RN1907FS RN1909FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , 50 ― V IC ― TOSHIBA Maximum Ratings (Ta = 25°C) (Q1, Q2 common) (E1) (E2 , Ž¯ R1 1 kΩ 2004-04-12 RN2972FS,RN2973FS IC - VI(ON) RN2972FS RN2972FS Ta= 100 , VOLTAGE VI(OFF) ( V) RN2973FS -1.4 IC - VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta= 100 , Ta= 100 °C -10 25 -25 EMITTER COMMON IC /IB=20 -1 -0.1 -1 -10 COLLECTOR CURRENT IC


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PDF RN2972FS RN2973FS RN1972FS, RN1973FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , IC (µA) -10000 Ta= 100 °C -10 25 -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -25 -10 , VI(OFF) -10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 -1000 Ta= 100 , ,RN2911FS hFE - IC RN2910FS RN2910FS Ta= 100 °C 1000 -25 100 25 EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 -100 Ta= 100 °C -100 25 -10 -25 EMITTER COMMON IC /IB


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PDF RN2910FS RN2911FS RN1910FS, RN1911FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications package Incorporating a bias resistor into a transistor reduces parts count , VI(OFF) 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 25 , Ta= 100 °C 10 25 -25 1 0.1 100 COLLECTOR CURRENT IC (mA) hFE - IC RN1973FS


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PDF RN1972FS RN1973FS RN2972FS, RN2973FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver , „¦ 2004-04-12 RN1972FS,RN1973FS (Q1,Q2 common) RN1972FS IC - VI(ON) RN1972FS Ta= 100 °C 10 25 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 25 1 -25 EMITTER COMMON , 100 EMITTER COMMON VCE=5V 10 0.1 1 10 100 Ta= 100 °C 10 -25 EMITTER COMMON IC


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PDF RN1972FS RN1973FS RN2972FS, RN2973FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , (ON) RN1904FS 100 COLLECTOR CURRENT IC (mA) Ta= 100 °C 10 1 INPUT VOLTAGE VI(ON) (V) 100 COLLECTOR CURRENT IC (mA) Ta= 100 °C 10 0.1 0.1 25 1 -25 COMMON EMITTER VCE , ) IC - VI(ON) RN1906FS 100 100 Ta= 100 °C COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC , =5V COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (µA) 10000 1000 Ta= 100 °C 25 -25 100


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PDF RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN1902FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , ) RN1901FS 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100 Ta= 100Â °C 10 25 1 , =0.2V 100 0.1 10 100 IC - VI(ON) RN1904FS 100 COLLECTOR CURRENT IC (mA) 100 Ta= 100Â °C 10 1 INPUT VOLTAGE VI(ON) (V) IC - VI(ON) RN1903FS COLLECTOR CURRENT IC (mA) Ta= 100Â , VOLTAGE VI(ON) (V) INPUT VOLTAGE VI(ON) (V) IC - VI(ON) IC - VI(ON) RN1906FS 100 100 Ta= 100Â


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PDF RN1901FS RN1906FS RN1902FS RN1903FS RN1904FS RN1905FS RN1905FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , 0.1 0.12 2004-02-27 RN2901FS~RN2906FS RN2901FS RN2902FS IC - VI(ON) Ta= 100Â , RN2904FS IC - VI(ON) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 100Â °C 25 -1 -25 , ) -100 COLLECTOR CURRENT IC (mA) -100 Ta= 100Â °C -10 25 -1 -25 EMMITER COMMON VCE= -0.2V -0.1 -0.1 IC - VI(ON) Ta= 100Â °C INPUT VOLTAGE VI(ON) ( V) RN2905FS -100 -100


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PDF RN2901FS RN2906FS RN2902FS RN2903FS RN2904FS RN2905FS RN2905FS
2004 - Not Available

Abstract: No abstract text available
Text: RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , ) RN2693FS RN2694FS IC - VI(ON) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 100 , (ON) IC - VI(ON) -100 COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 -1 -25 EMMITER COMMON VCE= -0.2V -0.1 -0.1 IC - VI(ON) Ta= 100 °C INPUT VOLTAGE VI(ON) ( V , CURRENT IC (µA) -25 -100 INPUT VOLTAGE VI(OFF) ( V) Ta= 100 °C 25 -25 -100 -10


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PDF RN2961FS RN2966FS RN2962FS RN2963FS RN2964FS RN2965FS RN2965FS
2004 - Not Available

Abstract: No abstract text available
Text: RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100 Ta= 100Â °C 10 25 1 -25 COMMON EMITTER , 10 100 IC - VI(ON) RN1964FS 100 COLLECTOR CURRENT IC (mA) 100 Ta= 100Â °C 10 1 INPUT VOLTAGE VI(ON) (V) IC - VI(ON) RN1963FS COLLECTOR CURRENT IC (mA) Ta= 100Â °C 10 , (ON) (V) INPUT VOLTAGE VI(ON) (V) IC - VI(ON) IC - VI(ON) RN1966FS 100 100 Ta= 100Â


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PDF RN1961FS RN1966FS RN1962FS RN1963FS RN1964FS RN1965FS RN1965FS
2004 - Not Available

Abstract: No abstract text available
Text: RN4986FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 10 25 1 -25 COMMON EMITTER VCE , hFE 25 Ta= 100 °C 25 -25 100 COMMON EMITTER VCE = 5V 10 1 10 COMMON EMITTER IC / IB = 20 100 Ta= 100 °C 25 -25 10 100 1 COLLECTOR CURRENT IC (mA) 10 100 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 -1 -25 EMMITER


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PDF RN4986FS
Not Available

Abstract: No abstract text available
Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , IC - VI(ON) Ta= 100 °C -10 25 -1 -25 EMITTER COMMON VCE= -0.2V -0.1 -0.1 -1 , CURRENT IC (μA) COLLECTOR CURRENT IC (mA) -10 Ta= 100 °C 25 -25 EMITTER COMMON VCE= -0.2V -1 -10 -1 -1.2 -1.4 IC - VI(OFF) -1000 25 Ta= 100 °C -25 -100 -10 -0.2 , EMITTER COMMON VCE= -5V EMITTER COMMON IC / IB=20 -100 Ta= 100 °C 25 -25 10 -10 -1


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PDF RN2107CT RN2109CT RN2107CT, RN2108CT, RN1107CT RN1109CT
Not Available

Abstract: No abstract text available
Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , RN1108CT IC - VI(ON) COLLECTOR CURRENT IC (μA) 10000 Ta= 100 °C 10 25 1 0.4 0.6 , 0.1 -25 COMMON EMITTER VCE=0.2V IC - VI(OFF) COMMON EMITTER VCE=5V 1000 Ta= 100 , DC CURRENT GAIN hFE Ta= 100 °C 25 -25 100 COMMON EMITTER VCE = 5V COMMON EMITTER IC / IB = 20 100 Ta= 100 °C 25 -25 10 10 1 10 100 1 COLLECTOR CURRENT IC (mA


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PDF RN1107CT RN1109CT RN1107CT, RN1108CT, RN2107CT RN2109CT RN1108CT
2004 - Not Available

Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in , - VI(OFF) 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 10 , EMITTER VCE = 5V 10 COMMON EMITTER IC / IB = 20 100 Ta= 100 °C 25 -25 10 1 10 100 , ) COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 -1 -25 EMMITER COMMON VCE= -0.2V -0.1 , °C 25 -25 100 EMITTER COMMON IC / IB=20 -100 EMITTER COMMON VCE= -5V 10 Ta= 100Â


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PDF RN4985FS
2004 - Not Available

Abstract: No abstract text available
Text: RN4982FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in , CURRENT IC (mA) 100 Ta= 100 °C 10 25 1 -25 COMMON EMITTER VCE=0.2V COMMON EMITTER VCE , 25 Ta= 100 °C 25 100 -25 COMMON EMITTER VCE = 5V COMMON EMITTER IC / IB = 20 100 Ta= 100 °C 25 -25 10 10 1 10 1 100 COLLECTOR CURRENT IC (mA) 10 100 , COMMON VCE= -5V -10 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 Ta= 100Â


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PDF RN4982FS
2004 - Not Available

Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 10 25 1 -25 COMMON EMITTER VCE , VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 Ta= 100 °C DC , 100 Ta= 100 °C 25 -25 10 1 10 100 1 COLLECTOR CURRENT IC (mA) 10 100 , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 -1 -25 EMITTER COMMON


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PDF RN4987FS
2004 - Not Available

Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta= 100 °C 10 25 1 -25 COMMON EMITTER VCE , VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 Ta= 100 °C DC , 100 Ta= 100 °C 25 -25 10 1 10 100 1 COLLECTOR CURRENT IC (mA) 10 100 , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 Ta= 100 °C -10 25 -1 -25 EMITTER COMMON


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PDF RN4987FS
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