The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTM9009CY-14#PBF-ES Linear Technology LTM9009-14 - 14-Bit, 80Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Commercial
LTM9009IY-14#PBF-ES Linear Technology LTM9009-14 - 14-Bit, 80Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Industrial
LTM9010CY-14#PBF-ES Linear Technology LTM9010-14 - 14-Bit, 105Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Commercial
LTM9010IY-14#PBF-ES Linear Technology LTM9010-14 - 14-Bit, 105Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Industrial
LTM9011IY-14#PBF-ES Linear Technology LTM9011-14 - 14-Bit, 125Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Industrial
LTM9011CY-14#PBF-ES Linear Technology LTM9011-14 - 14-Bit, 125Msps Low Power Octal ADCs; Package: BGA; Pins: 140; Temperature: Commercial

Toshiba NAND BGA 224 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Toshiba NAND BGA 224

Abstract:
Text: TOSHIBA TC220/223 SLI ASIC 0.3µm Standard Cell, Embedded Arrays, Gate Arrays Description , of packaging options available, including BGA , TAB-BGA, heatspreader plastic, QFP, TAB-QFP, and others to suit all applications · 90ps loaded NAND gate delay for high-performance systems · , 176 260 348 TC220C140/640 200,000 327,000 192 284 380 TC220C160/660 224 ,000 360,000 208 312 420 TC220C180/680 260,000 418,000 224 336 452


Original
PDF TC220/223 TC223 Toshiba NAND BGA 224 toshiba TC200 Toshiba BGA 224 ASIC tc220 TC200 TC220C TC223
tsop-56 samsung

Abstract:
Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components , TOSHIBA File Memory Products NAND flash is highest density non-volatile memory available today , systems. Low voltage NAND and BGA packages are also available. NAND Flash Part Number , instead of NAND flash. Toshiba NOR flash is compatible with the AMD command set and algorithms. NOR


Original
PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 THNCF1G02DG TSOP1-48 tc58fvm5t2atg THNCF1G02DGI toshiba Nand flash bga SD-M512 TC58NVG0S3AFTI5 THNCF128MMG
2003 - toshiba NAND ID code

Abstract:
Text: Part Number Reference Guide for Toshiba NAND Flash and Card Products Dec, 2003 File Memory Marketing & Promotion Department Memory Division Toshiba Semiconductor Company Copyright © 2003 Toshiba Corporation. All rights reserved. Small Block ( 16KByte/Block) NAND Flash EEPROM 2 / Part Number Reference Guide for 16KByte/Block NAND 128Mb / 256Mb / 512Mb / 1Gbit NAND Flash T C 5 8 D V M 9 2 A 1 F T 0 0 a b c d e a : Toshiba CMOS Flash Memory b : Type of Flash c


Original
PDF 16KByte/Block) 16KByte/Block 128Mb 256Mb 512Mb toshiba NAND ID code NAND Flash part number toshiba toshiba Nand flash bga toshiba Nand flash nand flash lga toshiba LGA Nand toshiba nand NAND FLASH BGA TOSHIBA Memory 2-level TOSHIBA packing
2008 - toshiba emmc

Abstract:
Text: e-MMC Module products housed in 153/169 ball BGA package. This unit is utilized advanced TOSHIBA NAND , Min Performance [MB/sec] TOSHIBA Part Number Density NAND Flash Type Read THGBM1G3D1EBAI8 , THGBM1GxDxEBAIx TOSHIBA e-MMC Module 1GB / 2GB / 4GB / 8GB / 16GB / 32GB INTRODUCTION , e-MMC Module Products ­ Part Numbers TOSHIBA Part Number THGBM1G3D1EBAI8 THGBM1G4D1EBAI7 , x 18.0mm x 1.4mm(max) 14.0mm x 18.0mm x 1.4mm(max) NAND Flash Type 1 x 8Gbit MLC 43nm 1 x 16Gbit MLC


Original
PDF 16-GB 32-GB toshiba emmc 153 ball eMMC memory toshiba 16GB Nand flash emmc THGBM MMC04G toshiba 8GB Nand flash bga 4GB eMMC toshiba THGBM1G5D2EBAI7 toshiba 8GB Nand flash emmc "Manufacturer ID" eMMC
Toshiba NAND BGA 224

Abstract:
Text: TOSHIBA TC222C Standard Cell CMOS ASIC Series 0.3µm 2/3V ASICs The TC222C series is a low power , available on a die · A wide range of packaging options available including BGA , TAB-BGA, heatspreader , . TC222C Standard Cell Product Listing (additional Master Slices are available from Toshiba ) Reference , 200,000 327,000 192 380 284 TC222C16/66 224 ,000 360,000 208 420 312 , Metal TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 TC222C Standard Cell CMOS ASIC Series


Original
PDF TC222C TC200 AS31841096 Toshiba NAND BGA 224 IC* MOD* ASIC Toshiba R3900
2010 - Toshiba emmc

Abstract:
Text: Preliminary THGBM3G4D1FBAIG TOSHIBA e-MMC Module 2GB THGBM3G4D1FBAIG INTRODUCTION THGBM3G4D1FBAIG is 2-GByte density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module. THGBM3G4D1FBAIG , e-MMC Module Products – Part Numbers TOSHIBA Part Number Density Package Size NAND Flash , ) TOSHIBA Part Number Density NAND Flash Type Interleave Operation Max Operating Current [mA


Original
PDF P-TFBGA153-1113-0 Toshiba emmc THGBM eMMC data retention THGBM3G4D1FBAIG BGA 221 eMMC Toshiba NAND BGA 224 THGBM3G Toshiba emmc performance toshiba
2010 - Toshiba NAND BGA 224

Abstract:
Text: Preliminary THGBM3G5D1FBAIE TOSHIBA e-MMC Module 4GB THGBM3G5D1FBAIE INTRODUCTION THGBM3G5D1FBAIE is 4-GByte density of e-MMC Module product housed in 169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module. THGBM3G5D1FBAIE , size) TOSHIBA Part Number Density NAND Flash Type Interleave Operation Typ. Performance , 3.6V 1.65V to 1.95V / 2.7V to 3.6V Operating Current (RMS) TOSHIBA Part Number Density NAND


Original
PDF P-TFBGA169-1216-0 Toshiba NAND BGA 224 Toshiba emmc Toshiba BGA 224 toshiba emmc 4.41 THGBM3G5 THGBM3G THGBM THGB emmc jedec BGA 221 eMMC
1996 - Toshiba NAND 67 Bga

Abstract:
Text: TOSHIBA System ASIC TC190 Series CMOS ASICs 0.6µ 3.0/3.3V ASIC Family The 0.6µm, 5V TC190 ASIC , packages are availible, including heat spreader plastic QFP, TABFP, BGA , tape BGA and others. ­ New , series ASIC family is manufactured using Toshiba 's 0.6µm double and triple layer complimentary , offers Toshiba 's high quality and high capacity manufacturing expertise. A partnership with Toshiba , requirement. New packages are continuously being developed. Contact your Toshiba sales representative for the


Original
PDF TC190 TC190G) TC190E) TC190C) TC190E Toshiba NAND 67 Bga TOSHIBA TC160G 568ps TC190G04 tc160g TC190G10 C2878 tc170g TC190G TC190G02
1998 - toshiba toggle mode nand

Abstract:
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology , 5 Generations with One Clean Room [µm] 0.35 [ TOSHIBA ] -Trench Capa. -KrF Litho -STI/CMP 0.32 0.25 , n TOSHIBA 64M/128M/256M SYNCHRONOUS DRAM Totally Compatible between 3 Generations of Products , PC66 EDO 9 DRAM Market n TOSHIBA SYNCHRONOUS DRAM ROAD MAP ES CS MP Product , TOSHIBA SYNCHRONOUS DRAM RAOD MAP (CONT'D) ES CS MP Product Current Generation x4/x8/x16


Original
PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 551664 TC551001 equivalent TC518512 jeida 38 norm Toggle DDR NAND flash sgs-thomson power supply MCP 1g nand toshiba
tc3587

Abstract:
Text: EYE 05 May 2006 TOSHIBA SEMICONDUCTOR BULLETIN EYE VOLUME 166 CONTENTS INFORMATION Toshiba and SanDisk to Expand NAND Flash Memory Production with Construction of New Advanced Fabrication , INFORMATION Toshiba and SanDisk to Expand NAND Flash Memory Production with Construction of New Advanced Fabrication Facility at Yokkaichi Operations Toshiba Corporation and SanDisk® Corporation have agreed to , anticipated demand for NAND flash memory products in 2008 and beyond. Toshiba intends to maintain its


Original
PDF 300-mm tc3587 PLL sandisk lvds cable 2ch TC358700XBG toshiba NAND Flash NAND Flash part number toshiba QFP80 SANDISK 16bit Sandisk Flash memory sandisk nand flash
TH58NVG2S3

Abstract:
Text: 128 Mbits 8 TC58FVM7T2AFT80 TC58FVM7B2AFT80 16M × 8/ 8M × 16 NAND EEPROMs NAND , Mbits 512 Mbits TC58DVG02A1FT00 NAND EEPROM 1 Gbits (128M + 4M) × 8 bits , 477 30.0 451 TSOP (II) (0.65 mm) 60 BGA (1.0 × 1.0 mm) 144 BGA (1.0 × 0.8 mm) 60 BGA (1.0 × 1.0 mm) 8.0 6.0 66 (66) 8.0 16,777,216 × 18 (4 Banks) 3.0 , -0710 2.3 to 3.6 12 × 20 TSOP TYPE I FBGA48-0608 54 56 14 × 20 TSOP TYPE I 56 NAND


Original
PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits TC58FVM6T2AFT65 AFT 181 AFT85 AFT-70L
china DVD player card circuit diagram

Abstract:
Text: Solder Ball Strains in the Lower BGA Toshiba provides support for measuring stress-induced strains in , Xi DAC 4 DRAM 3. Cell Phone 3-Chip SiP (SoC + SDRAM + NAND Flash) SoC Antenna , Module LCD Display Li-ion Battery Backlight SiP Memory Module (SDRAM, NAND Flash) Memory , (Incl. Third-Party Products) q NOR Flash q NAND Flash q FCRAM q SDRAM/DDR-SDRAM User Logic q , results Development Support If you are concerned about electrical noise, Toshiba offers 3


Original
PDF
TC280

Abstract:
Text: TOSHIBA TC280 SLI ASIC Family with Embedded DRAM 0.11µm/1.5V Description TC280 is Toshiba , of metal and high density memory structures. Toshiba offers the TC280 standard cell family for , core limited designs · High density SRAM cells · 18ps with 10ps input slew for 2-Input NAND gate , is more suited for core limited designs. Toshiba 's comprehensive package options include low-cost PQFP's, TBGA's and EBGA's. High performance, high pin count Flip chip BGA 's are offered for designs


Original
PDF TC280 206Kg/mm2 toshiba sram data 1 gate toshiba logic
2006 - reset nand flash HYNIX

Abstract:
Text: , Toshiba , Hynix, ST, etc. The focus of this application note is to detail how ORNAND with NAND interface , Spansion ORNAND and the associated pin names for Samsung, Toshiba and Hynix/ST NAND . Complete 48pin , S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


Original
PDF S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND nand flash HYNIX 1gb hynix nand 2G Spansion NAND Flash
2009 - toshiba emmc 4.4

Abstract:
Text: , Toshiba ) (8-bit ECC) page size NAND Flash devices. Has a corresponding GPIO pin. Note: 512 byte page , , Toshiba ) (8-bit ECC) BT_PAGE_SIZE[1:0] 00 512 bytes 01 2 Kbytes 10 4 Kbytes Set the NAND Flash , NAND Devices . . . . . . . . . . . . . . . . . . . . 11 NOR Flash Devices . . . . . . . . . . . . . . , I2C · NAND Flash · SD/MMC (including high-capacity MoviNAND boot through MMC interface) · USB, UART , Associated Contacts Used for Boot BGA Contact Direction at Boot eFuse Name W20 BMOD[1


Original
PDF AN3684 MCIMX25RM) toshiba emmc 4.4 toshiba onenand Toshiba 512 NAND MLC FLASH BGA MICRON oneNAND movinand emmc Toshiba emmc micron emmc micron emmc 4.3 movinand emmc
1995 - TC190C

Abstract:
Text: TOSHIBA TC220 Series CMOS ASIC Family 0.3µm, 3.3V ASICs The 0.3µm drawn TC220 3.3V ASIC , critical to survival. · 111ps loaded nand gate delay for high performance systems · High level cores for , the I/ O pads available on a die · A wide range of packaging options available including BGA , Layer Metal, TLM=Triple Layer Metal Preliminary TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 , power optimization. Commerical EDA Sign-off TC220 series is supported by Toshiba 's open EDA


Original
PDF TC220 111ps TC200 TC190C TOSHIBA GATE ARRAY system ic TC220E Toshiba R3900 toshiba r3900 datasheet
1995 - ASIC tc220

Abstract:
Text: TOSHIBA TC220 Series CMOS ASIC Family 0.3µm, 3.3V ASICs The 0.3µm drawn TC220 3.3V ASIC , critical to survival. · 111ps loaded NAND gate delay for high performance systems · High level cores for , the I/ O pads available on a die · A wide range of packaging options available including BGA , Layer Metal, TLM=Triple Layer Metal Preliminary TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 , are available through partnership designs. TC220 series is supported by Toshiba 's Open EDA Strategy


Original
PDF TC220 111ps TC200 ASIC tc220 toshiba R3900 microprocessor "embedded dram" and Graphics and Toshiba TC220C TC220E toshiba TC200
2005 - SPI NAND FLASH samsung k9

Abstract:
Text: Version 2.0 · NAND Flash Interface: - Support capacity 8/16/32/64/128M Bytes for Samsung/ Toshiba "Flash , NAND Flash Interface: (ICEMode_En# = don't care) SIGNAL NAME BGA PIN NO LQFP PIN NO TYPE DESCRIPTION , can directly connect to ATAPI Device, CompactFlash card (CF), NAND type flash and Secure Digital card , NAND Flash chips · Secure Digital/ Multi Media Card Interface - Complies with Secure Digital Version , EEPROM I/F SD/MMC I/F NAND I/F IDE I/F GPIO I/F SPI I/F -5- Publication Release Date


Original
PDF W99888 W99888 SPI NAND FLASH samsung k9 uP8051 8051 mp3 player circuit diagram toshiba pendrive controller chip k9f1 w9920 mp3 player circuit diagram with 8051 samsung K9 flash B4L6 TOSHIBA flash memory
SAMSUNG 4gb NAND Flash Qualification Report

Abstract:
Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit , service: Product Depth Customization Compliance to -Complete line of DRAM modules and NAND Flash Solid , ) technology -Small form factor removable NAND flash cards -Memory In Package Solutions Sales Service and , Interest Group SFF-SIG nand flaSh ProductS SD&MMCCards. 5 CompactFlashTMCards , ,000 insertions. 4 NanD Flash Products microSd Securedigital (Sd) Securedigital high


Original
PDF CH-9552 D-12681 SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 256Mb NAND Flash Qualification Reliability ddr3 MTBF part number decoder toshiba NAND Flash MLC nand flash socket lga 60 DDR3 pcb layout raw card f so-dimm DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout samsung 128G nand flash
TOSHIBA TC160

Abstract:
Text: counts (600 to over 2000), Toshiba 's flip-chip BGA packaging (PBGA[FC]) offers the highest I/O density , . Toshiba 's ASIC offerings include gate arrays, suitable for short delivery times, and cell-based ICs , advantages in both development schedules and integration/features. Toshiba will continue to provide ASIC , Broadband Internet Age Featuring unparalleled CMOS performance, the Toshiba TC300 family can satisfy the , family, Toshiba offers a robust, state-of-the-art design environment geared to shorten the development


Original
PDF TC260E. TOSHIBA TC160 TC300C 130 nm CMOS standard cell library TC260 TOSHIBA standard cell library toshiba TC200G TC200 CMOS-4 Cell-based ASIC 90nm cmos 90 nm CMOS
1999 - MIPS R3000A

Abstract:
Text: customized more often than ever before to fit specific needs of target systems. Toshiba offers a , systems. The combination of Toshiba 's world-class computer and silicon technologies provides its customers with a total solution - a partnership with Toshiba brings you not only the performance of our , Emulators Simulators Continuous Evolution of Toshiba 's MPU Cores ASICs Packaging EDA tools , , Toshiba provides a broad range of Reduced Instruction Set Computer (RISC) and Complex Instruction Set


Original
PDF 4594C-9904 MIPS R3000A TOSHIBA TC160G verilog code 16 bit CISC CPU TC160G TC180G TMPR3903AF verilog code for cisc processor TC190G Toshiba R3900 microcontroller tlcs R3900 interface
BiCD-0

Abstract:
Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE APRIL 2005 VOLUME 153 CONTENTS New Products White LED , LED Driver IC: TB62737FUG Features Toshiba announced a new driver IC that powers the White LEDs , Toshiba 's first 6pin MFSOP type, ZC (zero cross) photo triac coupler. Compared with the previous TLP361J , 20-pin packages, Toshiba has released the US14, a 14-pin package as the newest one of the series , 64-bit RISC Microprocessor for Digital Consumer Applications: TX4939XBG-400 Toshiba Introduced a


Original
PDF 64-bit TB62737FUG BiCD-0 TX4939XBG-400 EN60747-5-2 NAND Flash part number toshiba power triac circuit handbook DDR400 TLP261J TLP361J TSSOP14 TX4939
2008 - mcz 300 1bd

Abstract:
Text: : Semiconductors Published by TOSHIBA CORPORATION Semiconductor Company . 21 , Copyright © 2008 by Toshiba Corporation . , , "Rambus" Rambus Inc. . LSI . , Semiconductor Company of Toshiba Corporation Printed in Korea 2 Engineering Planning Division/e-Business , NAND , SD , R O M , . NOR (C F) U S B , , , , (P D A ) ( STB CompactFlashTM NAND ROM), , T V


Original
PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor philips igbt induction cooker HgCdTe UJT pin identification Photo DIAC thyristor BT 161 power IGBT MOSFET GTO SCR diode rct Thyristor dg23 transistor smd
samsung 1Gb nand flash

Abstract:
Text: LEAPER-9 HANDY NAND FLASH IC WRITER PC System requirement 1.Operating System: Windows 98/ME/2K/XP 2. Processor: Pentium pro above 3. 32 MB RAM minimum, 64MB recommended 4. Hard disk with , autoidentification. Supported Device Samsung, Toshiba , SGS NADN FLASH Standard Accessories 2. Link to PC via , highspeed programming. Only takes 30 seconds on programming a Mb NAND FLASH (C+P+V) 5. Simple and , Clock Frequency: 0Hz - 32MHz Optional Accessories IC adaptors : TSOP BGA . , 4. Data file


Original
PDF 98/ME/2K/XP 48-pin 600mil 89/336/EEC EN55022 EN50082-1 IEC801-3 IEC801-2 IEC801-4 500mA samsung 1Gb nand flash NAND FLASH BGA toshiba Nand flash bga IEC801-3 hard disk toshiba nand flash socket bga TSOP 48 socket samsung FLASH BGA toshiba nand
2001 - Synchronous DRAM and Samsung

Abstract:
Text: OF = NOR Flash NF = NAND Flash Memory Width Stack Type CB = Ceramic BGA PB = Polyimide BGA LT = Leaded TSOP TB = TSOP BGA Supplier ID 00 = Not Specified IS = Irvine Sensors * = Contact , Specified 1 = Samsung 2 = Toshiba 3 = Micron 4 = Hitachi 5 = Mitsubishi 6 = NEC 7 = Hyundai 8 ­


Original
PDF ISED16M8LTB int10 Synchronous DRAM and Samsung 8211 ed16m
Supplyframe Tracking Pixel