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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9P205MUF-C BD9P205MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 0.8V to 8.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package Visit ROHM Semiconductor
BD9P105MUF-C BD9P105MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 0.8V to 8.5V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package Visit ROHM Semiconductor
BD9P105EFV-C BD9P105EFV-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 0.8V to 8.5V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, HTSSOP-B20 Package Visit ROHM Semiconductor
BD9P205EFV-C BD9P205EFV-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 0.8V to 8.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, HTSSOP-B20 Package Visit ROHM Semiconductor
BD9P155MUF-C BD9P155MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 5.5V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package Visit ROHM Semiconductor
BD9P255MUF-C BD9P255MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 5.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package Visit ROHM Semiconductor

Three MMIC Solution for an X-band RF Front End Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - sspa transmitter x band

Abstract: No abstract text available
Text: produce optimal solutions for network solution virtually any application at an affordable cost. cost , €. QuinStar has delivered the flight units for the front end of the W-band (94 GHz) satellite-borne radar , been productized for a wide range of applications. QuinStar’s Own MMIC Development QuinStar has , WaveFront W Front The QuinStar Newsletter Spring 2014 Twenty First Anniversary Issue Message , . amplifiers are intended for use in airborne and ground groundbased applications as well as satellite and


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PDF 1980s sspa transmitter x band
2014 - Not Available

Abstract: No abstract text available
Text: excellent bare die solution for high power X-Band applications. The MAAP-015035 is a three stage 8.5 - , gate bias circuit providing an excellent bare die solution for high power X-Band applications. (Photo , products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar , for applications ranging from RF to Light. Headquartered in Lowell, Massachusetts, M/A-COM Tech is , April 28, 2014 MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and


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PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/
x-band microwave fet

Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
Text: market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of , . Cost Drivers Yield is the prime MMIC cost driver. MSAG yields, even for very complex chips, are outstanding. Highly integrated MMIC 's (see for example, Figure 7) are routinely manufactured. The starting , , our RF switch product line uses no front side plating or backside processing. Reliability The , Arrhenius plot of an HPA under RF life-test at rated power. A 1-dB loss of power was viewed as a "failure."


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2014 - Not Available

Abstract: No abstract text available
Text: providing an excellent bare die solution for high power X-Band applications. The MAAP-015035 is a three , millimeter wave products, today announced two new high power MMIC amplifiers ideal for X-Band communication , , serving as a true partner for applications ranging from RF to Light. Headquartered in Lowell , 978.656.2500 macomtech.com PRESS RELEASE MACOM Launches New X-Band High Power Amplifiers for Commercial Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of


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PDF 41dBm MAAP-015030 41drized
2006 - X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , Applications InGaP HBT SiGe BiCMOS Low Noise Front End Amplifiers General X-Band Gain Block Si , , no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any , ) 50%, 50%, and 75%, which is the standard recommended bias setting for the MMIC . For lower current , temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing


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PDF FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
2006 - x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , Output Ports Low Noise Front End Amplifiers General X-Band Gain Block Applications , Voltage (VDD) Supply Current (IDD) RF Input Power (PIN)2 ( For standard bias conditions) Storage , RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of , %, and 75%, which is the standard recommended bias setting for the MMIC . For lower current operation, the


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PDF FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip
2006 - Not Available

Abstract: No abstract text available
Text: Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for , Decoupled Input and Output Ports GaAs pHEMT  Low Noise Front End Amplifiers General X-Band Gain , ) 8 V Supply Current (IDD) 75 % IDSS RF Input Power (PIN)2 ( For standard bias , by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights , the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage can be


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PDF FMA246 FMA246 14GHz. FMA246-000SQ FMA246-000 FMA246-000S3 DS110503
2007 - Not Available

Abstract: No abstract text available
Text: -stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The , APPLICATIONS: • • Low noise front end amplifiers General X-Band gain block ELECTRICAL , % IDSS RF Input Power PIN For standard bias conditions -8dBm Storage Temperature TSTG , setting for the MMIC . For lower current operation, the 3 stage can be set to 50% by bonding to the pad , of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing


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PDF FMA246 FMA246
2008 - x-band mmic

Abstract: FMA246 60IDSS 60IDS
Text: . TYPICAL APPLICATIONS: · · Low noise front end amplifiers General X-Band gain block ELECTRICAL , IDD For VDD < 7V 75% IDSS RF Input Power PIN For standard bias conditions -8dBm , for the MMIC . For lower current operation, the 3rd stage can be set to 50% by bonding to the pad just , recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for , FMA246 Preliminary Datasheet v3.0 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · ·


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PDF FMA246 FMA246 x-band mmic 60IDSS 60IDS
C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Text: circuit using a nonlinear model, the above design process is repeated so that an optimum solution for , efficiency (PAE) from a single chip. Progress in this area, for Ku-band MMIC power amplifiers, has been , calculations. The next step is to calculate the net power dissipation in the FETs under RF drive. An , drain voltage. The negative sign in Equation 2 represents an inductive reactance. For example, for a 1 , model for MSAG processing predicts that reducing the chip area from 40 mm2 to 20 mm2 will improve MMIC


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2008 - 60IDS

Abstract: x-band mmic
Text: DESCRIPTION: The FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over , conditionally stable if the input port is opencircuited. TYPICAL APPLICATIONS: · · Low noise front end , %, which is the standard recommended bias setting for the MMIC . For lower current operation, the 3rd stage , in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed , FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: · · · · · · · 8.0 ­ 14.0 GHz Operating


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PDF FMA246 FMA246 22A114. MIL-STD-1686 MIL-HDBK-263. 60IDS x-band mmic
1993 - 71200-H1

Abstract: y-parameter x-band mmic lna X-band lna MAAM28000-A1 MAAM71200-H1 X-band low noise amplifiers mmic case styles maam 23000-A1
Text: MMIC products and provides an accurate model for incorporating package effects into future design work , Application Note M542 Electrical Characterization of Packages for Use with GaAs MMIC , 's. Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , need for expensive, device specific, traditional fixtures and overcome their frequency limitations, an , alumina, with an 8-mil pitch, ground-signal-ground (G-S-G) probe pattern at one end . The two ground pads


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x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: realization of Figure 1. (above) Arrhenius Plot of MSAG Power MMIC Accelerated RF Life Test (~2 dB , reliability, Figure 1 is an Arrhenius plot of an HPA under RF life-test at rated power. A 1-dB loss of power , MMIC cost driver. MSAG yields, even for very complex designs, are outstanding, and highly integrated , process features a complete suite of passive and active components, if not needed for a particular MMIC , ). Figure 4 shows an XBand control MMIC which integrates a 6-bit phase shifter, a 5


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1993 - maam 23000-A1

Abstract: OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
Text: Feedthrough This information allows the identification of an appropriate package for existing MMIC , Electrical Characterization of Packages for Use with GaAs MMIC Amplifiers Abstract A test , microwave packages in order to identify appropriate packages for our MMIC amplifier products which cover , . Therefore, to evaluate and identify candidate packages for each of the amplifiers in our MMIC amplifier , frequency limitations, an RF probeable ceramic substrate was designed as the interface to the


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PDF 26100-B1 maam 23000-A1 OXLEY x-band mmic lna 71200-H1 LNA x-band mmic case styles MAAM28000-A1 MAAM71200-H1 x-band lna chip
smartstep

Abstract: f 9222 l Amplifier Research rs232 commands gsm modem block diagram rs232 weinschel 1415 100W sub amplifier 4000 watts power amplifier circuit diagram 8x8 led matrix amplifier circuit diagram 10000 watt RS-232 to i2c converter
Text: Output: 1.5:1 maximum 75 System - Board Design: o Front Panel Serviceability: No down time for RF , quality microwave and RF subsystems for a wide range of applications such as, RF distribution systems , specifications for an 8 x 8 UMTS configuration are: o Frequency Range: 800 MHz to 3 GHz o Attenuation Range , components for high frequency microwave applications, GaAs MMIC Switching design for fast switching , program, low cost solution for your bench test/calibration setups and subsystem applications. o Single


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FED-STD-209B

Abstract: anzac MD-113 anzac MD-109 anzac hybrid MD-1214 Adams-Russell MD 1010 manual dbl 2009 Anzac MD-141 anzac quadrature
Text: point for microelectronics technology within AdamsRussell and operates as an independent business unit , and MMIC packaging, a 4,000 sq. ft. Class 100 clean room for GaAs wafer fabrica tion, a 1,000 sq. ft. Class 10,000 clean room for MMIC testing and approximately 6,000 sq. ft. of ser vice areas for clean , p lan tatio n / an n ealin g systems. C assette-tocassette wafer handling is incorporated for maxi , and 8753). Adams-Russell has made a major commitment to CAD/CAM technology for MMIC design and test. A


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PDF MD-124 MD-1361 MD-1355 MD-614 MD-1357 MAC-51 MD-1356 MD-113 MD-1301 FED-STD-209B anzac MD-113 anzac MD-109 anzac hybrid MD-1214 Adams-Russell MD 1010 manual dbl 2009 Anzac MD-141 anzac quadrature
1992 - body contact FET soi RF switch

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Text: an effective RF ground plane (see Figure 2). The MMIC may be mounted to the MOS capacitor using , life from each of the three tests is transferred to an Arrhenius plot and fit with a line. The slope , percentage. For example, an upper and lower 90% confidence limit would indicate that repeating the life test , dominates the lifetime for the entire MMIC . TriQuint Semiconductor has proven to have and continues to , models. Analytical Solution Methods Solving the heat equation for a simplified geometry results in a


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2005 - GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 2005 X=4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC , Broadband's X-Band, 10-Watt Power Amplifier MMIC " and "Epoxy Die Attach Considerations for HPA MMICs , 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band , Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF , DC and Output Power Testing 100% Visual Inspection , includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband's 0.5 m GaAs PHEMT device model


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PDF 03-Aug-07 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 XP1006 GAAS FET AMPLIFIER x-band 10w XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006-BD-000V
X-band Gan Hemt

Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: APPLICATION NOTE AN -011 GaN EssentialsTM AN -011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN -011 GaN Essentials: Substrates for GaN RF Devices 1 , for PA applications and has an impact on final cost of the device. The cost of the RF component is , modules, the back end cost for a single amplifier can be hundreds 2 of dollars. GaN MMIC PAs may occupy , electron mobility transistors (HEMTs) for high power RF applications are predominantly fabricated on


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PDF AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
2005 - P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: =4940 Y=4290 General Description Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power , Broadband's X-Band, 10-Watt Power Amplifier MMIC " and "Epoxy Die Attach Considerations for HPA MMICs , 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band , Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF , DC and Output Power Testing 100% Visual Inspection to , on-chip gate bias circuitry. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is


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PDF 11-Nov-08 P1006-BD MIL-STD-883 XP1006 XP1006-BD-000V XP1006-BD-EV1 P1006BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
x-band mmic core chip

Abstract: CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
Text: Product Feature T/R Module Solution for X-band Phasedarray Radar U nited Monolithic Semiconductors (UMS) has a considerable heritage in the design and production of MMIC solutions for space and defense programs. This extensive experience has been used to design state-of-the-art chipsets for , for power and lower than three points for PAE, in a 120°C temperature range. The CHA8100 provides 10 , mismatch of 2:1. Conclusion UMS has developed a complete solution for high performance T/R modules based


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PDF com/28495-74 x-band mmic core chip CHA7215 mmic core chip CHA8100 wide band phase shifter pulse compression radar x-band mmic lna CHA7115 radar system with circuit diagram x-band accuracy
2000 - 676.160

Abstract: x-band microwave fet x-band power amplifier
Text: TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier. A 2.4mm , TGA8286-EPU RECOMMENDED ASSEMBLY DIAGRAM RF connections: Thermocompression bond using three 1-mil diameter, 20 to 30-mil-length gold bonds at RF Input and at RF Output for optimum RF performance. A 1uF , 's Recommended Assembly Instructions for GaAs Products. GaAs MMIC devices are susceptible to damage from , metallization. The TGA8286-EPU effectively addresses applications such as an Xband radar transmitter or a


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PDF TGA8286-EPU TGA8286-EPU effectivel00pF 676.160 x-band microwave fet x-band power amplifier
2008 - Not Available

Abstract: No abstract text available
Text: down time for RF paths. o All active modules are front panel replaceable using simple tools. o 10 , quality microwave and RF subsystems for a wide range of applications such as, RF distribution systems, switch matrices, attenuation matrices, RF link simulators, mobile unit fading simulators and cellular , specifications for an 8 x 8 UMTS configuration are: o Frequency Range: 800 MHz to 3 GHz o Attenuation Range , coaxial components for high frequency microwave applications, GaAs MMIC Switching design for fast


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PDF GPIB/IEEE-488 RS-232 RS-422,
Not Available

Abstract: No abstract text available
Text: : Thermocompression bond using three 1-mil diameter, 20 to 30-mil-length gold bond wires at RF Input and at RF Output for optimum RF performance. A lu F , or greater, capacitor should be attached to the gate line within , ENLARGEMENT DESCRIPTION The Texas Instruments TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier. A 2.4-mm and a 9.6-mm HFET provide 16-dB nominal gain from 8 to , applications such as an X-band radar transmitter or a microwave communication transmitter. The TGA8286-EPU is


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PDF TGA8286-EPU 17-dB TGA8286-EPU 16-dB trans130
x-band mmic

Abstract: No abstract text available
Text: Raytheon Electronics RMM5030 9-10 GHz GaAs MMIC Power Amplifier Description The Raytheon RMM5030 is an X-band two-stage GaAs MMIC power amplifier operating over 9-10 GHz which can be configured , ports are 250. A two or three step transformer is required to match to 500. 3. Electrical data is for , stages consisting of 2x1400 |im FETs driving 4x2000 (im FETs for a total FET periphery of 21.6mm. Either channel can be operated as an independent amplifier in a 50 ohm system to provide 34 dBm power output with


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PDF RMM5030 RMM5030 2x1400 4x2000 25dBm, 500ns, x-band mmic
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