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Part Manufacturer Description Datasheet Download Buy Part
LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1126AMJ8/883B Linear Technology IC DUAL OP-AMP, 170 uV OFFSET-MAX, 65 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier
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TW-05-12-L-D-750-170 Samtec Inc Newark element14 100 $2.56 $1.16
TW-05-12-L-D-750-170 Samtec Inc Sager 64 $1.33 $0.80
TW-05-12-L-D-750-170 Samtec Inc Samtec 67 $1.21 $0.66

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Catalog Datasheet MFG & Type PDF Document Tags
134.2kHz

Abstract: 125KhZ RFID READER 125khz RFID mobile phone 750180-B philips i-code RFID 125khz
Text: TEK Freedom RFID Adaptor for all Bluetooth Compatible Devices Handheld RFID Reader by TEK Industries, Inc. - Bare Board Freedom Bare Board Data Sheet TEK P/N 750171-B (125kHz), 750-170 -B (134.2kHz), 750180-B (13.56MHz) The Freedom is capable of reading and writing to multiple RFID tags. Transmitting data to any Bluetooth PDA or Bluetooth compatible PC is simple using the Freedom's wireless technology. The RFID Adaptor is self contained and because of its own rechargeable batteries, does not derive


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PDF 750171-B 125kHz) 750-170-B 750180-B 56MHz) 125kHz DI-078 134.2kHz 125KhZ RFID READER 125khz RFID mobile phone 750180-B philips i-code RFID 125khz
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SSI —LXH31 2HGW— 1 60 REV. L 4.30 E0.169] 1 (24.00 [00.157] —J Ld Id T fJ ÏÏ 05.00 [00.197: 0.90 [0.035] 13.00 [ 0.512 ] L^x; J U I 1,30 [0,051] 160.0^^0 : ««»m] OK. 6,00 [0,236] NOTES: 1. S5H—LXH3121 HOLDER, BLACK NYLON 94-V. 2. SSL-LXJ044HGW LED, LEADS CUT TO 5mm. 3. RED ANODE LEAD: LXP-WST26RDT0C, RED INSULATED LEAD, 26 AWG, CUT 166mm LONG. STRIP 10mm & ßmm. 4. GREEN ANODE LEAD: LXP-WST26BLT0C, BLACK INSULATED LEAD, 26 AWG, CUT 166inm LONG. STRIP


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PDF LXH31 LXH3121 SSL-LXJ044HGW LXP-WST26RDT0C, 166mm LXP-WST26BLT0C, 166inm RED65nm ECLJ05URE 50LDERIN5
Not Available

Abstract: No abstract text available
Text: €¢ The information contained herein is subject to change w ith out notice. 1997 05-12 - 1/11 T , 12.0 33 1997 05-12 - 2/11 T O SH IB A TB1232F/FN ELECTRICAL CHARACTERISTICS (Unless , timing chart. 1997 05-12 - 3/11 T O SH IB A TB1232F/FN H O W TO CALCULATE LOCK FREQUENCY , 05-12 - 4/11 lf lf T O SH IB A TB1232F/FN MSB I JD VI — x ~ ^ - x MSB , the enable signal and transferred. 1997 05-12 - 5/11 T O SH IB A TB1232F/FN TEST MODE


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PDF TB1232F/FN TB1232F, TB1232FN TB1232F TB1232FN OP16-P-225-1
Fujitsu mb

Abstract: D 1145 mb fujitsu
Text: -1.105 Ta = +70° C -1.045 Low-level Digital Input Voltage Ta = 0°C V, LD -1.490 V TA = , Low-level Digital Input Current l| LD 0.5 200 liA Supply Current VREF = -1.00 V Iee -90 -56 mA SWITCHING , 1111111111 - 0.512 513 1000000001 0111111110 0000000001 1111111110 -0.513 1022 1111111110 0000000001


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PDF 10-BIT Fujitsu mb D 1145 mb fujitsu
gaas fet marking AR

Abstract: 15862
Text: power Drain efficiency Thermal resistance 1. 2. f = 1800 MHz, VD S = 3.4 V, lD S Q = 300 mA. f = 1900 MHz, VD S = 3.4 V, lD S Q = 300 mA. Symbol ^ss goo Condition VG S =-5 V Vgd = -13V VD s - 8 , 0.869 0.819 0.778 0.739 0.708 0.677 0.654 0.630 0.609 0.588 0.564 0.555 0.538 0.528 0.517 0.512 MAG


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PDF KGF1606_ KGF1606 KGF1606 gaas fet marking AR 15862
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM —42258MI —SUG 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.5 0 [0 .1 7 7 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY TYP 4.4 5.2 5.0 3 4 Vf Ir =1 DOjuA 1f =1 OmA CREEN GRAY SEGMENT COLOR , X C E PT A S SPEC F1C A LLY AUTHORIZED IN WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM


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PDF 42258MI 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM — 42258M 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.5 0 [0 .1 7 7 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY TYP 4.4 5.2 5.0 3 4 Vf Ir =1 DOjuA 1f =1 OmA CREEN GRAY SEGMENT COLOR: 2 TEST , H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A i INFORMATION C 0 N 1 A N E D HEREIN CONFIDENTIAL


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PDF 42258M 565nm 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM —42458M I —SI 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o REV. 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER M IN PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY 4.0 5.0 5.0 3 4 Vf 1 =1 DOjuA r 1f =1 OmA RED CRAY SEGMENT , WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A i INFORMATION C 0 N 1 A N


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PDF 42458M 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM — 42458M 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY 4.0 5.0 5.0 2 3 4 TEST COND Vf Ir =1 DOjuA 1f =1 OmA Vr ¿icd 2000 RED CRAY , F1C A LLY AUTHORIZED IN WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A


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PDF 42458M 1DJ130) 635nm
IR30D

Abstract: pin configuration 7730 IC C175 PAD01 T6963C 128 64 graphic LCD
Text: UNCONTROLLED DOCUMENT 13.00 [ 0.512 : c ■-in > in N A n r- ON _i m eu j LJ i^ u LJN ID O 0W LJ o dJÏÏ CD O O LD = 0,35 tO. 014] 78.00 [3.071] PART NUMBER LCM-X1 2864GXX/E REV. E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11337. REV. A DATE 6.22.06 72,00 [2,835] VA - 66,52 [2,619] I,A, — _ P2,54*19= 48.26 [1.S00] _ 20-01,0 PAD01.8 1,80 [0,071] wwwpipifiiwnr 1 20 li 68.00 [2.677] 77.30 [3.043] (BEZEL) I 2,54 [0,100] COPY OBJECTS AND PUT ON REV- LAYER. UD in "I oJ


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PDF 2864GXX/E PAD01 IR30D pin configuration 7730 IC C175 T6963C 128 64 graphic LCD
S8210

Abstract: No abstract text available
Text: : lo s s = 10 |jA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5-1.2 V (VDS = 10 V, Id = 200 |lA , (BR) D S X Vth 0.5 - 1.2 — 34 60 VGS = 2.5 V, lD = 3.5 A — 26 40 V q s = 4.0 V, lD = 4.0 A Drain-source ON resistance v Ds = io v , Id = 200 hA VGs = 2.0 V, lD = 3.5 A Gate threshold voltage Id = 10 mA, V q s = -1 2 V 8 — 19 30 Vos


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PDF TPCS8210 S8210
Not Available

Abstract: No abstract text available
Text: CD74FCT273TM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273ATM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273CTM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273DTM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273TQM -40 to 85 20 Ld QSOP M 20.15-P CD74FC T273ATQM -40 to 85 20 Ld QSOP M 20.15-P CD74FCT273CTQ M -40 to 85 20 Ld QSOP M 20.15-P CD74FCT273DTQ M -40 to 85 20 Ld QSOP M 20.15-P CD74FCT2273TM -40 to 85 20 Ld SOIC M20.3-P CD74FCT2273ATM -40 to 85 20 Ld SOIC M20


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PDF CD74FCT273T, CD74FCT2273T CD74FCT273T CD74FCT2273T
Not Available

Abstract: No abstract text available
Text: Breakdown Voltage 60 V GS(th) 0.8 CONDITIONS. lD =10|iA, V Qg=0V V lD =1mA, VDg= VGS nA , < < Gate-Body Leakage MAX. V GS=10V, lD =500mA VGs=4.5V, lD =75mA Static Drain-Source On-State Resistanced) ^ DS(on ) 5 a VGs=10V, lD =500mA Forward Transconductance(1)(2) 9 fs mS VDS=10V, lD =200mA Input Capacitance (2) 75 100 ^"iss pF ^ o ss Common Source Output , ) ns ‘ (off) Turn-Off Time (2)(3) 10 10 ns V Dg=25V, VG£f0V,f=1MHz V DD=15V, lD


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PDF 001G35S
Not Available

Abstract: No abstract text available
Text: 'D(on) lD =1m A,VGS=0V 3 V lD =1mA, V DS= V GS 20 nA V g s = ±2 0 V ,V d s =0V , Current MAX. a VGS=10V, lD =250mA mS V DS=25V, lD =250mA 500 Static Drain-Source On-State , 8 ns Turn-Off Delay Time (2X3) ld (off) 20 ns Fall Time (2)(3) tf 12 V d s=25 V, VGS=0V, f=1 MHz ns V d d =25V, lD =250mA (1) Measured under pulsed conditions. Width , 0.158 I D 13.00 13.97 0.512 0.550 1 ^ E F I - * _ - 1 =


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PDF ZVN2120A Tamtp25Â cH7Q57Ã 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: Voltage v GS(th) -1.5 Gate-Body Leakage MAX UNIT CONDITIONS. V -4.5 lD =-1mA,VGS , Drain Currentd) 'D(on) mA V ds=-25V,V gs=-10V 100 C l VGS=-10V, lD =-50mA mS VDS=-25V( lD =-50mA Static Drain-Source On-State Resistance (1) -120 RDS(on) Forward , ns Fall Time (2)(3) tf 20 Vds=-25 V, VGS=0V, f=1MHz ns VDD=-25V, lD =-50mA (1 , ✓ r VG8-10V lo—EOmA ✓ ■~ _ r > V gj» V ds lD -1mA • w p w


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PDF onf100Ã Tamtp25Â 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: Gate-Source Threshold Voltage v GS(th) 1 UNIT CONDITIONS. V MAX. lD =1m A ,V GS=0V V lD =1mA, VDg= VGg !gss 20 nA VGS= ± 2 0 V ,V DS=0V bss 10 100 Zero Gate Voltage , , lD -25 0 m A mS 16 Vds=240 V, VGS=0 Vds=192 V, VGS=0V, T=125°C(2) mA 500 1 1 3 Gate-Body Leakage VDS=25V, lD =250mA Input Capacitance (2) ^¡ss 85 pF Com mon Source O , =1MHz ns VDD=25V, lD =250mA (1) Measured under pulsed conditions. W idth=300|is. Duty cycle <2% (2


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PDF Tamp25Â cH7Q57Ã 0Q1Q354 001G35S
3fs 4a

Abstract: No abstract text available
Text: Capacitance (2) lD =-1mA, VGS=0V -4.5 V nA -20 -2 HA mA Vds=-450 V, VGS=0 Vds=-360 V, VGS=0V, T=125°C(2) mA VDS= -25V,VGS=-10V 150 a VGS=-10V, lD =-50mA mS VDS=-25V, lD , (2X3) 'dfoffl 15 ns Fall Time (2X3) tf 20 lD =-1 mA, VDg= Vjjg ,V GS=±20V,VD£r0V ns Common Source Output Capacitance (2) V DS=-25 V, V GS=0V, f=1 MHz VDD=-25V, lD , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF cH7Q57Ã 001G35S 3fs 4a
1996 - CD74LPT373

Abstract: CD74LPT373AM CD74LPT373AQM CD74LPT373CM CD74LPT373CQM CD74LPT373M CD74LPT373QM
Text: PART NUMBER TEMP. RANGE (oC) PKG. NO. PACKAGE CD74LPT373AM -40 to 85 20 Ld SOIC M20.3-P CD74LPT373AQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT373CM -40 to 85 20 Ld SOIC M20.3-P CD74LPT373CQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT373M -40 to 85 20 Ld SOIC M20.3-P CD74LPT373QM -40 to 85 20 Ld QSOP M20.15-P NOTE: QSOP is , 0.330 0.508 - 0.009 0.011 0.229 0.279 - 0.496 0.512 12.60 13.00 1


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PDF CD74LPT373 CD74LPT373 1-800-4-HARRIS CD74LPT373AM CD74LPT373AQM CD74LPT373CM CD74LPT373CQM CD74LPT373M CD74LPT373QM
2005 - Not Available

Abstract: No abstract text available
Text: [1.535] 39 [1.535] 35 [1.378] W [0.040] 11 [0.433] 11 [0.433] 12 [0.472] 12 [0.472] 13 [ 0.512 ] 13 [ 0.512 ] 13 [ 0.512 ] 13 [ 0.512 ] 16 [0.630] L [0.040] 3.5 [0.138] 3.5 [0.138] 8 [0.315] 8 [0.315] 9 [0.354] 9 [0.354] 9 [0.354] 9 [0.354] 12 [0.472] LD [0.002] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] ± 1.0 ± 1.0 ± 0.05 CPCF02 CPCC03 LD


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PDF CPCC02 CPCF02 CPCC03 CPCF03 CPCC05 CPCF05 CPCC07 CPCF07 CPCC10 08-Apr-05
2009 - Not Available

Abstract: No abstract text available
Text: [millimeters] GLOBAL CC LD L W H MODEL ± 0.060 ± 0.040 ± 0.040 ± 0.002 + 0.08 - 0.04 [+ 2 - 1] [0.05] [1.0 , [12] 0.472 [12] 0.512 [13] 0.512 [13] 0.512 [13] 0.512 [13] 0.630 [16] 0.138 [3.5] 0.138 [3.5 , ] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.295 [7.5] LD CC W L CPCC03 CPCF03


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PDF CPCC02 CPCF02 CPCC03 CPCF03 CPCC05 CPCF05 CPCC07 CPCF07 CPCC10 18-Jul-08
1996 - CD74LPT573

Abstract: CD74LPT573AM CD74LPT573AQM CD74LPT573CM CD74LPT573CQM CD74LPT573M CD74LPT573QM
Text: PART NUMBER TEMP. RANGE (oC) PKG. NO. PACKAGE CD74LPT573AM -40 to 85 20 Ld SOIC M20.3-P CD74LPT573AQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT573CM -40 to 85 20 Ld SOIC M20.3-P CD74LPT573CQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT573M -40 to 85 20 Ld SOIC M20.3-P CD74LPT573QM -40 to 85 20 Ld QSOP M20.15-P NOTE: QSOP is , A1 0.020 0.330 0.508 - 0.009 0.011 0.229 0.279 - 0.496 0.512


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PDF CD74LPT573 CD74LPT573 1-800-4-HARRIS CD74LPT573AM CD74LPT573AQM CD74LPT573CM CD74LPT573CQM CD74LPT573M CD74LPT573QM
Not Available

Abstract: No abstract text available
Text: . UNIT CONDITIONS. 1.5 V lD =1mA, VDS= V GS nA V q s =± 20V, V DS=0V 10 100 i t , DS= 2 5 V ,V GS=5V Q n VGS=5V,ln=250mA V GS=3V, to=125mA mS 500 V DS=25V, lD =250mA ld (on) 8 ns Rise Time (2){3) tr 8 ns Turn-Off Delay Time (2)(3) ld (off) 20 Vos=25 V, V GS=0V, f=1MHz ns V q D=25V, lD =250mA Fall Time (2)(3) 12 ns tf (1) Measured , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF ZVNL120A cH7Q57Ã 001G35S
Not Available

Abstract: No abstract text available
Text: MIN. Input-Output, Case 50M Q MIN. at DC500V OL Ld m Ld a o C\| LD O I a a B. Marking; IDD— 0512 , ±12Vout I DD — 0512 MODEL SPECIFICATION QUALITY CONTROL: D. Kelley CONTENTS OF THIS DRAWING ARE SUBJECT


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PDF 50mVpâ DC500V ACAD\MISCX\A3125401 12Vout
Not Available

Abstract: No abstract text available
Text: ±300 ppm/°C -55°Cto+155°C Conditions Specification S h o r t T im e O v e r lo a d S o ld , ) 70°C at RCWV for 1000hrs (1.5 hrs. o n , 0.5 hrs. o ff) R e s is ta n c e T o S o ld e r in g H e , ±0.059 (25.00 ±1.50) SQM5 (5 W ) 0.512 ±0.040 (13.00 ±1.00) 0.354 ± 0.040 (9.00 ±1.00) SQM7 , ) 2.008 ± 0.059 (51.00 ±1.50) 0.512 ±0.040 (13.00 ±1.00) (10.00 ±1.00) S Q M 15SS (1 5 W , e s is ta n c e S o ld e r a b ility Conditions Specification Within resistors specification


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PDF 1000hrs
Not Available

Abstract: No abstract text available
Text: Threshold Voltage VGS(th) -1.5 MAX. UNIT CONDITIONS. V lD =-1mA, VGS=0V -3.5 V , ) RDS(on) Forward Transconductance (1X2) 9fs 150 V ds="18 V, VGS=-10V a VGS=-10V, lD , Leakage Vos=-18V, lD =-500mA Input Capacitance (2) *-"iss 100 pF Common Source Output , ) tdfoff) 12 ns OSS VDS=-18V, VGS=0V, f=1MHz Vdd =-18V, lD =-500mA Fall Time (2)(3) 15 , 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^ E F I


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PDF ZVP2106A cH7Q57Ã 0Q1Q354 001G35S
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