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LTC1040MJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LTC1040CJ Linear Technology IC DUAL COMPARATOR, 750 uV OFFSET-MAX, 80000 ns RESPONSE TIME, CDIP18, 0.300 INCH, HERMETIC SEALED, CERDIP-18, Comparator
LT1078S16 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1112CS8 Linear Technology IC DUAL OP-AMP, 750 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1079S Linear Technology IC QUAD OP-AMP, 750 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO16, PLASTIC, SOL-16, Operational Amplifier
LT1055CH#PBF Linear Technology IC OP-AMP, 750 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
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TW-05-12-L-D-750-125 Samtec Inc Newark element14 100 $2.56 $1.16
TW-05-12-L-D-750-125 Samtec Inc Sager 64 $1.33 $0.80
TW-05-12-L-D-750-125 Samtec Inc Samtec 67 $1.21 $0.66

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TW-05-12-L-D-750-125 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
400-156

Abstract: No abstract text available
Text: .400 (10.2) .125 (3.2) .324 (8.2) 750-125 .750 (19.1) .125 (3.2) .674 (17.1


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PDF 12-BK. 59354CFR, MN6-FG10SE BV00-E101. 400-156
2004 - Not Available

Abstract: No abstract text available
Text: (17.1) J 312-187 .312 (7.9) .187 (4.8) .236 (6.0) G 750-125 .750 (19.1) .125


Original
PDF 11/64th
Not Available

Abstract: No abstract text available
Text: (10.2) .125 (3.2) .324 (8.2) 750-125 .750 (19.1) .125 (3.2) .674 (17.1) 400-156


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PDF 12-BK. 59354CFR, MN6-FG10SE BV00-E101.
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SSI —LXH31 2HGW— 1 60 REV. L 4.30 E0.169] 1 (24.00 [00.157] —J Ld Id T fJ ÏÏ 05.00 [00.197: 0.90 [0.035] 13.00 [ 0.512 ] L^x; J U I 1,30 [0,051] 160.0^^0 : ««»m] OK. 6,00 [0,236] NOTES: 1. S5H—LXH3121 HOLDER, BLACK NYLON 94-V. 2. SSL-LXJ044HGW LED, LEADS CUT TO 5mm. 3. RED ANODE LEAD: LXP-WST26RDT0C, RED INSULATED LEAD, 26 AWG, CUT 166mm LONG. STRIP 10mm & ßmm. 4. GREEN ANODE LEAD: LXP-WST26BLT0C, BLACK INSULATED LEAD, 26 AWG, CUT 166inm LONG. STRIP


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PDF LXH31 LXH3121 SSL-LXJ044HGW LXP-WST26RDT0C, 166mm LXP-WST26BLT0C, 166inm RED65nm ECLJ05URE 50LDERIN5
Not Available

Abstract: No abstract text available
Text: €¢ The information contained herein is subject to change w ith out notice. 1997 05-12 - 1/11 T , 12.0 33 1997 05-12 - 2/11 T O SH IB A TB1232F/FN ELECTRICAL CHARACTERISTICS (Unless , timing chart. 1997 05-12 - 3/11 T O SH IB A TB1232F/FN H O W TO CALCULATE LOCK FREQUENCY , 05-12 - 4/11 lf lf T O SH IB A TB1232F/FN MSB I JD VI — x ~ ^ - x MSB , the enable signal and transferred. 1997 05-12 - 5/11 T O SH IB A TB1232F/FN TEST MODE


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PDF TB1232F/FN TB1232F, TB1232FN TB1232F TB1232FN OP16-P-225-1
Fujitsu mb

Abstract: D 1145 mb fujitsu
Text: -1.105 Ta = +70° C -1.045 Low-level Digital Input Voltage Ta = 0°C V, LD -1.490 V TA = , Low-level Digital Input Current l| LD 0.5 200 liA Supply Current VREF = -1.00 V Iee -90 -56 mA SWITCHING , 1111111111 - 0.512 513 1000000001 0111111110 0000000001 1111111110 -0.513 1022 1111111110 0000000001


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PDF 10-BIT Fujitsu mb D 1145 mb fujitsu
gaas fet marking AR

Abstract: 15862
Text: power Drain efficiency Thermal resistance 1. 2. f = 1800 MHz, VD S = 3.4 V, lD S Q = 300 mA. f = 1900 MHz, VD S = 3.4 V, lD S Q = 300 mA. Symbol ^ss goo Condition VG S =-5 V Vgd = -13V VD s - 8 , 0.869 0.819 0.778 0.739 0.708 0.677 0.654 0.630 0.609 0.588 0.564 0.555 0.538 0.528 0.517 0.512 MAG


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PDF KGF1606_ KGF1606 KGF1606 gaas fet marking AR 15862
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM —42258MI —SUG 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.5 0 [0 .1 7 7 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY TYP 4.4 5.2 5.0 3 4 Vf Ir =1 DOjuA 1f =1 OmA CREEN GRAY SEGMENT COLOR , X C E PT A S SPEC F1C A LLY AUTHORIZED IN WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM


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PDF 42258MI 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM — 42258M 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.5 0 [0 .1 7 7 ] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY TYP 4.4 5.2 5.0 3 4 Vf Ir =1 DOjuA 1f =1 OmA CREEN GRAY SEGMENT COLOR: 2 TEST , H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A i INFORMATION C 0 N 1 A N E D HEREIN CONFIDENTIAL


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PDF 42258M 565nm 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM —42458M I —SI 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o REV. 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER M IN PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY 4.0 5.0 5.0 3 4 Vf 1 =1 DOjuA r 1f =1 OmA RED CRAY SEGMENT , WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A i INFORMATION C 0 N 1 A N


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PDF 42458M 1DJ130)
Not Available

Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER LDM — 42458M 13.00 [ 0.512 : PIN 14 PIN 8 o V, o fp o ooooo ooooo ooooo ooooo ooooo o a o o o o PIN 1 4.50 [0.177] ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER PEAK WAVELENGTH 91.44 [3.600] REVERSE VOLTAGE AXIAL INTENSITY 4.0 5.0 5.0 2 3 4 TEST COND Vf Ir =1 DOjuA 1f =1 OmA Vr ¿icd 2000 RED CRAY , F1C A LLY AUTHORIZED IN WRITING B f LUMEX I N C , T H E HO LD ER O F T H IS DOCUM ENT SHALL K E E P A


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PDF 42458M 1DJ130) 635nm
B260D

Abstract: halbleiterwerk scans-048
Text: Integrierter Ansteuerschaltkrais für gesegelte Sperrwandlerund Durchflußwandler - Schaltnetzteile Abmessungen in mm und Anschlußbelegung t 7.5±0.125 L \ /0 . . . 75° X \ 0` 2S-0,05 AOO AZA3 nr~ir~inr-ini-i n _ 76 15 n 13 11 11 10 9 0 i^Ü-Ero^Ö^ÖTJT? 1 Z 3 H - 5 6 7 0 1 - Betliebsspannung Hg 2 - Stabilisierte Spannung 3 - Steuerspannung des HegeIver stärkers 4 - TsMtäÄuagssiasfeeXlimg 9 " Synchronisation des Sägezahngenerators 10 - Ein/Aus (Fernbedienung) 11 - Strombegrenzung 12 -


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PDF
IR30D

Abstract: pin configuration 7730 IC C175 PAD01 T6963C 128 64 graphic LCD
Text: UNCONTROLLED DOCUMENT 13.00 [ 0.512 : c ■-in > in N A n r- ON _i m eu j LJ i^ u LJN ID O 0W LJ o dJÏÏ CD O O LD = 0,35 tO. 014] 78.00 [3.071] PART NUMBER LCM-X1 2864GXX/E REV. E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11337. REV. A DATE 6.22.06 72,00 [2,835] VA - 66,52 [2,619] I,A, — _ P2,54*19= 48.26 [1.S00] _ 20-01,0 PAD01.8 1,80 [0,071] wwwpipifiiwnr 1 20 li 68.00 [2.677] 77.30 [3.043] (BEZEL) I 2,54 [0,100] COPY OBJECTS AND PUT ON REV- LAYER. UD in "I oJ


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PDF 2864GXX/E PAD01 IR30D pin configuration 7730 IC C175 T6963C 128 64 graphic LCD
S8210

Abstract: No abstract text available
Text: : lo s s = 10 |jA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5-1.2 V (VDS = 10 V, Id = 200 |lA , (BR) D S X Vth 0.5 - 1.2 — 34 60 VGS = 2.5 V, lD = 3.5 A — 26 40 V q s = 4.0 V, lD = 4.0 A Drain-source ON resistance v Ds = io v , Id = 200 hA VGs = 2.0 V, lD = 3.5 A Gate threshold voltage Id = 10 mA, V q s = -1 2 V 8 — 19 30 Vos


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PDF TPCS8210 S8210
Not Available

Abstract: No abstract text available
Text: CD74FCT273TM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273ATM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273CTM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273DTM -40 to 85 20 Ld SOIC M20.3-P CD74FCT273TQM -40 to 85 20 Ld QSOP M 20.15-P CD74FC T273ATQM -40 to 85 20 Ld QSOP M 20.15-P CD74FCT273CTQ M -40 to 85 20 Ld QSOP M 20.15-P CD74FCT273DTQ M -40 to 85 20 Ld QSOP M 20.15-P CD74FCT2273TM -40 to 85 20 Ld SOIC M20.3-P CD74FCT2273ATM -40 to 85 20 Ld SOIC M20


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PDF CD74FCT273T, CD74FCT2273T CD74FCT273T CD74FCT2273T
Not Available

Abstract: No abstract text available
Text: Breakdown Voltage 60 V GS(th) 0.8 CONDITIONS. lD =10|iA, V Qg=0V V lD =1mA, VDg= VGS nA , < < Gate-Body Leakage MAX. V GS=10V, lD =500mA VGs=4.5V, lD =75mA Static Drain-Source On-State Resistanced) ^ DS(on ) 5 a VGs=10V, lD =500mA Forward Transconductance(1)(2) 9 fs mS VDS=10V, lD =200mA Input Capacitance (2) 75 100 ^"iss pF ^ o ss Common Source Output , ) ns ‘ (off) Turn-Off Time (2)(3) 10 10 ns V Dg=25V, VG£f0V,f=1MHz V DD=15V, lD


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PDF 001G35S
Not Available

Abstract: No abstract text available
Text: 'D(on) lD =1m A,VGS=0V 3 V lD =1mA, V DS= V GS 20 nA V g s = ±2 0 V ,V d s =0V , Current MAX. a VGS=10V, lD =250mA mS V DS=25V, lD =250mA 500 Static Drain-Source On-State , 8 ns Turn-Off Delay Time (2X3) ld (off) 20 ns Fall Time (2)(3) tf 12 V d s=25 V, VGS=0V, f=1 MHz ns V d d =25V, lD =250mA (1) Measured under pulsed conditions. Width , 0.158 I D 13.00 13.97 0.512 0.550 1 ^ E F I - * _ - 1 =


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PDF ZVN2120A Tamtp25Â cH7Q57Ã 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: Voltage v GS(th) -1.5 Gate-Body Leakage MAX UNIT CONDITIONS. V -4.5 lD =-1mA,VGS , Drain Currentd) 'D(on) mA V ds=-25V,V gs=-10V 100 C l VGS=-10V, lD =-50mA mS VDS=-25V( lD =-50mA Static Drain-Source On-State Resistance (1) -120 RDS(on) Forward , ns Fall Time (2)(3) tf 20 Vds=-25 V, VGS=0V, f=1MHz ns VDD=-25V, lD =-50mA (1 , ✓ r VG8-10V lo—EOmA ✓ ■~ _ r > V gj» V ds lD -1mA • w p w


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PDF onf100Ã Tamtp25Â 0Q1Q354 001G35S
Not Available

Abstract: No abstract text available
Text: Gate-Source Threshold Voltage v GS(th) 1 UNIT CONDITIONS. V MAX. lD =1m A ,V GS=0V V lD =1mA, VDg= VGg !gss 20 nA VGS= ± 2 0 V ,V DS=0V bss 10 100 Zero Gate Voltage , , lD -25 0 m A mS 16 Vds=240 V, VGS=0 Vds=192 V, VGS=0V, T=125°C(2) mA 500 1 1 3 Gate-Body Leakage VDS=25V, lD =250mA Input Capacitance (2) ^¡ss 85 pF Com mon Source O , =1MHz ns VDD=25V, lD =250mA (1) Measured under pulsed conditions. W idth=300|is. Duty cycle <2% (2


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PDF Tamp25Â cH7Q57Ã 0Q1Q354 001G35S
3fs 4a

Abstract: No abstract text available
Text: Capacitance (2) lD =-1mA, VGS=0V -4.5 V nA -20 -2 HA mA Vds=-450 V, VGS=0 Vds=-360 V, VGS=0V, T=125°C(2) mA VDS= -25V,VGS=-10V 150 a VGS=-10V, lD =-50mA mS VDS=-25V, lD , (2X3) 'dfoffl 15 ns Fall Time (2X3) tf 20 lD =-1 mA, VDg= Vjjg ,V GS=±20V,VD£r0V ns Common Source Output Capacitance (2) V DS=-25 V, V GS=0V, f=1 MHz VDD=-25V, lD , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF cH7Q57Ã 001G35S 3fs 4a
1996 - CD74LPT373

Abstract: CD74LPT373AM CD74LPT373AQM CD74LPT373CM CD74LPT373CQM CD74LPT373M CD74LPT373QM
Text: PART NUMBER TEMP. RANGE (oC) PKG. NO. PACKAGE CD74LPT373AM -40 to 85 20 Ld SOIC M20.3-P CD74LPT373AQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT373CM -40 to 85 20 Ld SOIC M20.3-P CD74LPT373CQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT373M -40 to 85 20 Ld SOIC M20.3-P CD74LPT373QM -40 to 85 20 Ld QSOP M20.15-P NOTE: QSOP is , 0.330 0.508 - 0.009 0.011 0.229 0.279 - 0.496 0.512 12.60 13.00 1


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PDF CD74LPT373 CD74LPT373 1-800-4-HARRIS CD74LPT373AM CD74LPT373AQM CD74LPT373CM CD74LPT373CQM CD74LPT373M CD74LPT373QM
2005 - Not Available

Abstract: No abstract text available
Text: [1.535] 39 [1.535] 35 [1.378] W [0.040] 11 [0.433] 11 [0.433] 12 [0.472] 12 [0.472] 13 [ 0.512 ] 13 [ 0.512 ] 13 [ 0.512 ] 13 [ 0.512 ] 16 [0.630] L [0.040] 3.5 [0.138] 3.5 [0.138] 8 [0.315] 8 [0.315] 9 [0.354] 9 [0.354] 9 [0.354] 9 [0.354] 12 [0.472] LD [0.002] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] 0.8 [0.031] ± 1.0 ± 1.0 ± 0.05 CPCF02 CPCC03 LD


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PDF CPCC02 CPCF02 CPCC03 CPCF03 CPCC05 CPCF05 CPCC07 CPCF07 CPCC10 08-Apr-05
2009 - Not Available

Abstract: No abstract text available
Text: [millimeters] GLOBAL CC LD L W H MODEL ± 0.060 ± 0.040 ± 0.040 ± 0.002 + 0.08 - 0.04 [+ 2 - 1] [0.05] [1.0 , [12] 0.472 [12] 0.512 [13] 0.512 [13] 0.512 [13] 0.512 [13] 0.630 [16] 0.138 [3.5] 0.138 [3.5 , ] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.197 [5] 0.295 [7.5] LD CC W L CPCC03 CPCF03


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PDF CPCC02 CPCF02 CPCC03 CPCF03 CPCC05 CPCF05 CPCC07 CPCF07 CPCC10 18-Jul-08
1996 - CD74LPT573

Abstract: CD74LPT573AM CD74LPT573AQM CD74LPT573CM CD74LPT573CQM CD74LPT573M CD74LPT573QM
Text: PART NUMBER TEMP. RANGE (oC) PKG. NO. PACKAGE CD74LPT573AM -40 to 85 20 Ld SOIC M20.3-P CD74LPT573AQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT573CM -40 to 85 20 Ld SOIC M20.3-P CD74LPT573CQM -40 to 85 20 Ld QSOP M20.15-P CD74LPT573M -40 to 85 20 Ld SOIC M20.3-P CD74LPT573QM -40 to 85 20 Ld QSOP M20.15-P NOTE: QSOP is , A1 0.020 0.330 0.508 - 0.009 0.011 0.229 0.279 - 0.496 0.512


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PDF CD74LPT573 CD74LPT573 1-800-4-HARRIS CD74LPT573AM CD74LPT573AQM CD74LPT573CM CD74LPT573CQM CD74LPT573M CD74LPT573QM
Not Available

Abstract: No abstract text available
Text: . UNIT CONDITIONS. 1.5 V lD =1mA, VDS= V GS nA V q s =± 20V, V DS=0V 10 100 i t , DS= 2 5 V ,V GS=5V Q n VGS=5V,ln=250mA V GS=3V, to=125mA mS 500 V DS=25V, lD =250mA ld (on) 8 ns Rise Time (2){3) tr 8 ns Turn-Off Delay Time (2)(3) ld (off) 20 Vos=25 V, V GS=0V, f=1MHz ns V q D=25V, lD =250mA Fall Time (2)(3) 12 ns tf (1) Measured , B C 3.61 4.01 0.142 0.158 I D 13.00 13.97 0.512 0.550 1 ^


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PDF ZVNL120A cH7Q57Ã 001G35S
Supplyframe Tracking Pixel