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2013 - TSMC 0.18Um

Abstract: No abstract text available
Text: included in the marking of legacy products only. PROCESS CODE TSMC , 0.35µm, Polycide, SPQM or SPTM Logic A TSMC , 0.25µm B X-FAB, 0.25µm C TSMC , 0.18µm D k - PACKAGE , . X-FAB, 0.18µm E TSMC , 0.18µm , EPI, Ar Anneal, Hi G Goyatek/Vanguard, 0.25µm H TSMC 0.25µm EPI, Ar Anneal, Hi J TSMC 0.18µm Automotive Process K TSMC 0.13µm M Drop-in heat spreader D TSMC 90nm N Exposed heat spreader E Fujitsu 90nm P Q Regular


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PDF 6815-LA1-GR TW6816-LA1-GR TW6817-LA1-GR TW6818-LA1-GR TW6932-LA1-GR 1-888-INTERSIL TSMC 0.18Um
2012 - TSMC 0.35um

Abstract: tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc TSMC 90nm 0.18-um utac qfn TW6818-LA1-GR
Text: Nomenclature Guide TW Types TW aaaa bb - c PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer c - PROCESS This character is included in the marking of legacy products only. PROCESS TSMC , 0.35µm, Polycide, SPQM or SPTM Logic TSMC , 0.25µm X-FAB, 0.25µm TSMC , 0.18µm X-FAB, 0.18µm TSMC , 0.18µm , EPI, Ar Anneal, Hi Goyatek/Vanguard, 0.25µm TSMC 0.25µm EPI, Ar Anneal, Hi TSMC 0.18µm Automotive Process TSMC 0.13µm TSMC 90nm Fujitsu 90nm TSMC 0.13µm 12" Wafer TSMC 65nm TSMC 45nm CODE A B C D E G H J K M N P Q R S h -


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PDF TW6815-LA1-GR TW6816-LA1-GR TW6817-LA1-GR TW6818-LA1-GR TW6932-LA1-GR 1-888-INTERSIL TSMC 0.35um tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc TSMC 90nm 0.18-um utac qfn
tsmc 0.18um

Abstract: ccii CCII APPLICATION current conveyors tsmc 0.18um CMOS transistor APP4198 current conveyor TSMC 0.18um Process parameters electrical impedance tomography AN4198
Text: CMOS device. A typical simulated gain with a TSMC 0.18µm with a load of 1k gave a gain of 0.7 , TSMC 0.18µm process with R1 = 1k and R2 = 1k, results in a gain Page 5 of 6 of 1. The 3dB


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PDF com/an4198 MAX4112: MAX477: AN4198, APP4198, Appnote4198, tsmc 0.18um ccii CCII APPLICATION current conveyors tsmc 0.18um CMOS transistor APP4198 current conveyor TSMC 0.18um Process parameters electrical impedance tomography AN4198
2009 - tsmc 0.18um

Abstract: pci 2.3 TSMC memory guide
Text: ) TSMC 0.18µm 2932 gates 66 TSMC 0.13µm 2860 gates 66 TSMC 90 nm 2551 gates 66


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PDF PCI-M32MF 32-bit PCI-M32MF tsmc 0.18um pci 2.3 TSMC memory guide
2009 - TSMC 0.18Um

Abstract: TSMC 0.13um process specification 80C552 TSMC 90nm
Text: Technology TSMC 0.18µm TSMC 0.13µm TSMC 90nm Approx. Area 785 gates 773 gates 772 gates Frequency


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tsmc 0.18um

Abstract: TSMC 0.18um data sheet tsmc cmos RTL code for ethernet TSMC cmos 0.18um data sheet TSMC cmos 0.18um ethernet mdio circuit diagram 20 channel data transmitting circuit repeater 3.125G mdio termination
Text: mode Single 1.8V supply Power dissipation: 100mW per channel Available in TSMC 0.18um CMOS , SB1000 PRODUCT BRIEF SILICON BRIDGE SB1000 - Quad 1 - 3.125Gbps Low Power CMOS Transceiver Macro Cell in 0.18um TSMC Process FEATURES BENIFITS/ADVANTAGES · · · · · · · · · · · · · · · · · · · · · Compliant with IEEE 802.3ae 10Gbps Ethernet XAUI specification Integrated CMU, CDR, MUX/DMUX enabling operating range from 1 - 3.2Gbps Integrated per-channel receive


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PDF SB1000 SB1000 125Gbps 10Gbps 8B/10B tsmc 0.18um TSMC 0.18um data sheet tsmc cmos RTL code for ethernet TSMC cmos 0.18um data sheet TSMC cmos 0.18um ethernet mdio circuit diagram 20 channel data transmitting circuit repeater 3.125G mdio termination
2008 - jpeg encoder vhdl code

Abstract: dct verilog code VHDL code DCT verilog code for huffman encoding camera vhdl code jpeg encoder vhdl code ALMA tsmc 0.18um vhdl code for huffman decoding Huffman SpeedTags
Text: 16,576 bits TSMC 0.09µm 142,111 50,394 500 MHz · Comprehensive user documentation, including detailed specifications and a system integration guide. Memory TSMC 0.18µm Logic Area


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2001 - CL018G

Abstract: M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx32) M1T1HT18FL32E 32-Bit CL018G M1T1HT18FL32E MoSys sram embedded TSMC 0.18um Process parameters
2001 - CL018G

Abstract: M1T2HT18PL32E TSMC 0.18um SRAM
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 64Kx32) M1T2HT18PL32E 32-Bit CL018G M1T2HT18PL32E 3200um TSMC 0.18um SRAM
2001 - CL018G

Abstract: 64Kx32 M1T2HT18PE32E TSMC 0.18um 1T-sram tsmc sram "1t-sram"
Text: Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal layers ·


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PDF 64Kx32) M1T2HT18PE32E 32-Bit CL018G M1T2HT18PE32E 3200um 2300um 64Kx32 64Kx32 TSMC 0.18um 1T-sram tsmc sram "1t-sram"
TSMC 0.18um

Abstract: No abstract text available
Text: 3 3 0 0 0 0 0 0 FA# TSMC 0.18um Mixed signal, Embedded Flash, General Purpose, Two Poly Five


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PDF MAXQ61H, MAXQ1103 QN089294AA QK086138CA QN096322AB QJ091011AC QJ091123AB QJ091049AB MAXQ2010 TSMC 0.18um
2001 - CL018G

Abstract: M1T1HT18FL64E MoSys MoSys sram embedded
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 16Kx64) M1T1HT18FL64E 64-Bit CL018G M1T1HT18FL64E MoSys MoSys sram embedded
2001 - CL018G

Abstract: tsmc sram TSMC 0.18um SRAM TSMC 0.18um Process parameters M1T1HT18PL64E M1T1HT18PZ64E MoSys sram embedded MoSys 1T sram tsmc 0.18um
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 16Kx64) M1T1HT18PZ64E 64-Bit CL018G M1T1HT18PZ64E 16Kx64 2200um tsmc sram TSMC 0.18um SRAM TSMC 0.18um Process parameters M1T1HT18PL64E MoSys sram embedded MoSys 1T sram tsmc 0.18um
2001 - TSMC 0.18um

Abstract: CL018G M1T1HT18PL32E M1T1HT18PZ32E
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx32) M1T1HT18PZ32E 32-Bit CL018G M1T1HT18PZ32E 32Kx32 2200um TSMC 0.18um M1T1HT18PL32E
2001 - CL018G

Abstract: M1T2HT18PL32E M1T2HT18PZ32E TSMC 0.18um
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 64Kx32) M1T2HT18PZ32E 32-Bit CL018G M1T2HT18PZ32E M1T2HT18PL32E TSMC 0.18um
2001 - CL018G

Abstract: M1T1HT18PE32E Signal Technology fast sram 100mhz
Text: Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal layers ·


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PDF 32Kx32) M1T1HT18PE32E 32-Bit CL018G M1T1HT18PE32E Signal Technology fast sram 100mhz
2001 - CL018G

Abstract: M1T1HT18PL64E 16Kx64 M1T1HT18PL32E fast sram 100mhz mosys sram embedded
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 16Kx64) M1T1HT18PL64E 64-Bit CL018G M1T1HT18PL64E 16Kx64 2200um 16Kx64 M1T1HT18PL32E fast sram 100mhz mosys sram embedded
2001 - "1t-sram"

Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx64) M1T2HT18FL64E 64-Bit CL018G M1T2HT18FL64E 2300um 32Kx64 3200um "1t-sram" TSMC 0.18um MoSys
2001 - tsmc 0.18um

Abstract: CL018G M1T1HT18FE32E
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx32) M1T1HT18FE32E 32-Bit CL018G M1T1HT18FE32E tsmc 0.18um
TSMC 0.18um Process parameters

Abstract: Si3N4 MAX14978
Text: ://www.maxim-ic.com/qa/reliability/monitor. Cumulative monitor data for the TSMC 0.18um Process results in a FIT Rate


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PDF MAX14978 MAX14978ETO+ /-2000V JESD22A114. /-250mA JESD78. TSMC 0.18um Process parameters Si3N4 MAX14978
2001 - CL018G

Abstract: M1T1HT18PE64E Signal Technology 16Kx64
Text: Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal layers ·


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PDF 16Kx64) M1T1HT18PE64E 64-Bit CL018G M1T1HT18PE64E Signal Technology 16Kx64
2001 - CL018G

Abstract: M1T2HT18FL32E "1t-sram"
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 64Kx32) M1T2HT18FL32E 32-Bit CL018G M1T2HT18FL32E 2300um 32Kx64 "1t-sram"
2001 - CL018G

Abstract: M1T2HT18PE64E TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx64) M1T2HT18PE64E 64-Bit CL018G M1T2HT18PE64E 3200um TSMC 0.18um tsmc sram CL018 TSMC 0.18um Process parameters
2001 - tsmc 0.18um

Abstract: SRAM timing CL018G M1T2HT18PL64E M1T2HT18PZ64E MoSys 1T sram mosys sram embedded
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 32Kx64) M1T2HT18PZ64E 64-Bit CL018G M1T2HT18PZ64E 2300um 32Kx64 tsmc 0.18um SRAM timing M1T2HT18PL64E MoSys 1T sram mosys sram embedded
2001 - 16Kx32

Abstract: TSMC 0.18um CL018G M1T1HT18FE64E
Text: yield · Standard Logic Process · TSMC 0.18µm CL018G process · Logic design rules · Uses 4 metal


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PDF 16Kx32) M1T1HT18FE64E 64-Bit CL018G M1T1HT18FE64E 16Kx32 TSMC 0.18um
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