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TSHF5410 Vishay Semiconductors LED IrLED 890nm 2-Pin T-1 3/4 Bulk
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TSHF5410 Vishay Intertechnologies Future Electronics - $0.18 $0.17
TSHF5410 Vishay Intertechnologies Farnell element14 3,782 £0.36 £0.20
TSHF5410 Vishay Intertechnologies Avnet - €0.26 €0.13
TSHF5410 Vishay Intertechnologies Avnet - $0.20 $0.17
TSHF5410 Vishay Intertechnologies element14 Asia-Pacific 3,717 $0.64 $0.27
TSHF5410 Vishay Intertechnologies Newark element14 2,676 $0.15 $0.15
TSHF5410 Vishay Dale Allied Electronics & Automation - $0.63 $0.41
TSHF5410 Vishay Intertechnologies Avnet - $0.68 $0.23
TSHF5410 Vishay Intertechnologies RS Components 740 £0.36 £0.20
TSHF5410 Vishay Intertechnologies RS Components 6,470 £0.32 £0.20
TSHF5410 Vishay Intertechnologies TME Electronic Components 5,711 $0.34 $0.17
TSHF5410 Vishay Intertechnologies Schukat electronic 3,450 €0.20 €0.11
TSHF5410 Vishay Intertechnologies Chip1Stop 35,108 $0.87 $0.21
TSHF5410ES21 Vishay Intertechnologies Avnet - - -
TSHF5410ES21 Vishay Intertechnologies Avnet 2,625 €0.28 €0.14

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TSHF5410 datasheet (2)

Part Manufacturer Description Type PDF
TSHF5410 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 5MM HI SPEED 890NM Original PDF
TSHF5410 Vishay Siliconix High Speed Infrared Emitting Diode in T-1 3/4 Package Original PDF

TSHF5410 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSHF5410 is an infrared, 890 nm emitting , (nm) tr (ns) 70 ± 22 890 30 TSHF5410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF5410 PACKAGING REMARKS , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5410


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PDF TSHF5410 2002/95/EC 2002/96/EC 11-Mar-11 TSHF5410
2012 - Not Available

Abstract: No abstract text available
Text: TSHF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm , TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant , systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT TSHF5410 Ie (mW/sr) 70 , " ORDERING INFORMATION ORDERING CODE TSHF5410 Note · MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5410 www.vishay.com Vishay Semiconductors


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PDF TSHF5410 2002/95/EC 2002/96/EC TSHF5410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2006 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at , transmission rate requirements. TSHF5410 is ideal for the design of transmission systems according to IrDA , Table Part Remarks TSHF5410 MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 °C, unless


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PDF TSHF5410 TSHF5410 2002/95/ECed 08-Apr-05
2006 - Not Available

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at , . TSHF5410 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Parts Table Part TSHF5410 Remarks


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PDF TSHF5410 TSHF5410 2002/95/EC 2002/96/EC 08-Apr-05
2008 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm , high pulse current operation DESCRIPTION · High modulation bandwidth: fc = 12 MHz TSHF5410 is , SUMMARY COMPONENT TSHF5410 Ie (mW/sr) (deg) P (nm) tr (ns) 70 ± 22 890 30 , PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHF5410 Note MOQ , questions, contact: emittertechsupport@vishay.com www.vishay.com 179 TSHF5410 High Speed Infrared


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PDF TSHF5410 TSHF5410 18-Jul-08
2007 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at , rate requirements. · TSHF5410 is ideal for the design of transmission systems according to IrDA , Part Remarks TSHF5410 MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 °C, unless


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PDF TSHF5410 TSHF5410 2002/95/Eed 08-Apr-05
2015 - Not Available

Abstract: No abstract text available
Text: TSHF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSHF5410 is an infrared, 890 nm emitting , (nm) tr (ns) 70 ± 22 890 30 TSHF5410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF5410 PACKAGING REMARKS , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5410


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PDF TSHF5410 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
2011 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero , 61249-2-21 definition 94 8390 DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs , ) 70 ± 22 890 30 TSHF5410 Note Test conditions see table "Basic Characteristics , pcs/bulk T-1¾ TSHF5410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER , -Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHF5410


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PDF TSHF5410 2002/95/EC 2002/96/EC TSHF5410 18-Jul-08
Not Available

Abstract: No abstract text available
Text: TSHF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSHF5410 is an infrared, 890 nm emitting , (nm) tr (ns) 70 ± 22 890 30 TSHF5410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHF5410 PACKAGING REMARKS , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHF5410


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PDF TSHF5410 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2011 - TSHF5410

Abstract: No abstract text available
Text: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero , 61249-2-21 definition 94 8390 DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs , ) 70 ± 22 890 30 TSHF5410 Note Test conditions see table "Basic Characteristics , pcs/bulk T-1¾ TSHF5410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER , -Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHF5410


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PDF TSHF5410 2002/95/EC 2002/96/EC TSHF5410 11-Mar-11
diode SR 360

Abstract: IEC 62471 60825-1 diode sr 60 IEC-60825 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
Text: TSHA6500 TSHA6501 TSHA6502 TSHA6503 TSHF4410 TSHF5210 TSHF5410 TSHF6210 TSHF6410 TSHG5210


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PDF 11-Sep-08 diode SR 360 IEC 62471 60825-1 diode sr 60 IEC-60825 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
751-1201-ND

Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND BPW41N 751-1002-ND BPW77NA 751-1015-ND 751-1043-1-ND
Text: TSAL6200 TSAL6400 TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 TSHG6400 TSHG8200


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PDF 751-1003-ND 751-1004-ND 751-1023-ND 751-1041-ND 751-10TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 751-1201-ND BPW21R 751-1001-ND 751-1213-ND 751-1013-ND BPW41N 751-1002-ND BPW77NA 751-1015-ND 751-1043-1-ND
tept5600 response time

Abstract: Application NOTES TSAL4400 SMD Transistor 1020 Photo interrupter application notes BPV11F "Photo Interrupter" dual transistor CNY70 cny70 datasheet TCND5000 TEMT6000
Text: 3.0 6.1 15 tShF5210 8.6 30 tShF5410 890 22 70 30 tSha5203 875


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PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 SMD Transistor 1020 Photo interrupter application notes BPV11F "Photo Interrupter" dual transistor CNY70 cny70 datasheet TCND5000 TEMT6000
2007 - Eye Safety

Abstract: No abstract text available
Text: mW/sr TSHF4410 1.9 890 nm/120 mW/sr TSHF5210 3.7 890 nm/360 mW/sr TSHF5410


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PDF 22-Jan-15 Eye Safety
2013 - Not Available

Abstract: No abstract text available
Text: TSFF5410 TSFF5510 TSFF6210 TSFF6410 TSHA5203 TSHA5500 TSHA6203 TSHA6500 TSHF5210 TSHF5410


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PDF VMN-SG2180-1305
TSUS3400

Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor BPW41N TEMT6200FX01 infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
Text: TSHF5210 890 10 180 30 Stand-off TSHF5410 890 22 70 30 Stand-off


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PDF VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor BPW41N TEMT6200FX01 infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
2008 - rs232 to irda schematic

Abstract: digital clock with 7segment 7 Segment common cathode 7 segment display control pc using RS232 MAX3111E TSHF5410 MAX3110E 7-segment common cathode MAX3120 7-segment display diode layout common cathode
Text: Evaluation Kit+ D5 High-speed IR emitting diode Vishay TSHF5410 D6 1 Silicon PIN photodiode


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PDF MAX3111E RS-232 2000/XP/Vista MAX3111E. MAXQ2000 rs232 to irda schematic digital clock with 7segment 7 Segment common cathode 7 segment display control pc using RS232 TSHF5410 MAX3110E 7-segment common cathode MAX3120 7-segment display diode layout common cathode
Not Available

Abstract: No abstract text available
Text: TSHF5410 TSHF6210 TSHF6410 TSHG5210 TSHG5410 TSHG5510 TSHG6200 TSHG6210 TSHG6400 TSHG6410


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PDF VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404
2015 - Not Available

Abstract: No abstract text available
Text: TSHA6203 TSHA6500 TSHF5210 TSHF5410 TSHF6210 TSHF6410 TSHG5210 TSHG5410 TSHG5510 TSHG6200


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PDF VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502
2007 - Physics and Technology

Abstract: physics pn junction diode structure
Text: (DDH) 20 890 40 p up TSHF5410 45 1.5 2.3 30 GaAlAs (DDH) 26 870


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PDF 06-Oct-14 Physics and Technology physics pn junction diode structure
photodiode ge

Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Text: /GaAlAs 16 890 40 p up TSHF5410 45 1.5 30 GaAlAs/GaAlAs 17 870 40 p


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PDF 26-Aug-08 photodiode ge TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
sensor BPW34 application note

Abstract: CEA-2038 TSOP4438 TEMD6200 touch sensitive siren using transistor BP104 application note VSMY2850 TSOP58038 vo2223 TEMD6200FX01
Text: 15 15 TSAL4400 VSLB3940 TSHF5210 TSHF5410 TSFF5210 TSFF5410 VSLY5850 TSFF5510 TSHG5210 TSHG6210


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PDF VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 TEMD6200 touch sensitive siren using transistor BP104 application note VSMY2850 TSOP58038 vo2223 TEMD6200FX01
sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor APPLICATION NOTE BpW34 BP104 application note BPW34 application note
Text: = ± 22° 140 1400 30 TSHF5410 40 32 320 15 TSAL4400 40 65 15


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PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor APPLICATION NOTE BpW34 BP104 application note BPW34 application note
2015 - Vishay TYPE 40D

Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
Text: No file text available


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PDF VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707
TSSP4038

Abstract: No abstract text available
Text: 15 TSAL4400 40 65 15 VSLB3940 TSFF5410 TSFF5210 TSHF5410 TSHF5210 Photo


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PDF VMN-MS6520-1311 TSSP4038
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