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TSFF5210-CS12 Vishay Semiconductors TSFF5210 - High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5210 Vishay Semiconductors LED IrLED 870nm 2-Pin T-1 3/4 Bulk

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
TSFF5210 Vishay Intertechnologies RS Components 3,015 £0.58 £0.45
TSFF5210 Vishay Intertechnologies Avnet 0 $1.16 $0.41
TSFF5210 Vishay Intertechnologies Newark element14 448 $1.16 $0.41
TSFF5210 Vishay Intertechnologies Farnell element14 1,130 £0.61 £0.38
TSFF5210 Vishay Siliconix Allied Electronics & Automation 0 $0.49 $0.49
TSFF5210 Vishay Intertechnologies Future Electronics 4,139 $0.39 $0.36
TSFF5210 Vishay Intertechnologies Bristol Electronics - -
TSFF5210 Vishay Intertechnologies RS Components 1,325 £0.85 £0.45
TSFF5210 Vishay Intertechnologies Avnet 0 $0.42 $0.37
TSFF5210 Vishay Intertechnologies ComS.I.T. - -
TSFF5210 Vishay Intertechnologies element14 Asia-Pacific 1,275 $1.14 $0.48
TSFF5210 Vishay Intertechnologies Schukat electronic 2,100 €0.26 €0.17
TSFF5210 Vishay Intertechnologies Chip1Stop 962 $1.70 $0.45
TSFF5210-CS12 Vishay Intertechnologies element14 Asia-Pacific 30,302 $1.35 $1.35
TSFF5210-CS12 Vishay Intertechnologies Newark element14 27,477 $1.79 $0.76
TSFF5210-CS12 Vishay Intertechnologies Farnell element14 27,477 £1.30 £0.59
TSFF5210CS12 Vishay Intertechnologies ComS.I.T. - -

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TSFF5210 datasheet (1)

Part Manufacturer Description Type PDF
TSFF5210 Vishay Siliconix Infrared emitting diodes Original PDF

TSFF5210 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - Not Available

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Nov-06 TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number


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PDF TSFF5210 TSFF5210 2002/95/Es 08-Apr-05
2008 - TSFF5210

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm , TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant , fire detectors PRODUCT SUMMARY COMPONENT TSFF5210 Ie (mW/sr) (deg) P (nm) tr (ns , T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL , TSFF5210 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay


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PDF TSFF5210 TSFF5210 18-Jul-08
2011 - TSFF5210

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting , (nm) tr (ns) ± 10 Ie (mW/sr) TSFF5210 180 Note Test conditions see table "Basic , Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF5210 Note MOQ: minimum order quantity ABSOLUTE , -Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSFF5210


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PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 18-Jul-08
2011 - Not Available

Abstract:
Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSFF5210 is an infrared, 870 nm , )  (deg) p (nm) tr (ns) 180 ± 10 870 15 TSFF5210 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5210 , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay


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PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11
Not Available

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Nov-06 TSFF5210 Vishay Semiconductors 0.02 e, rel - Relative Radiant Power 1000 tP/T = 0.01 Tamb , TSFF5210 Vishay Semiconductors Package Dimensions in mm 15909 www.vishay.com 4 Document Number


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PDF TSFF5210 TSFF5210 2002/95/Eany 18-Jul-08
2015 - Not Available

Abstract:
Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSFF5210 is an infrared, 870 nm , )  (deg) p (nm) tr (ns) 180 ± 10 870 15 TSFF5210 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5210 , SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay


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PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
2004 - Not Available

Abstract:
Text: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.2, 04-May-04 www.vishay.com 1 TSFF5210 Vishay , Document Number 81090 Rev. 1.2, 04-May-04 VISHAY TSFF5210 Vishay Semiconductors I e - Radiant , , 04-May-04 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY


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PDF TSFF5210 TSFF5210 D-74025 04-May-04
2012 - Not Available

Abstract:
Text: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm , high pulse current operation · High modulation bandwidth: fc = 24 MHz DESCRIPTION TSFF5210 is an , COMPONENT TSFF5210 Ie (mW/sr) 180 (deg) ± 10 p (nm) 870 tr (ns) 15 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 Note · MOQ: minimum order , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF5210 www.vishay.com Vishay Semiconductors TEST


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PDF TSFF5210 TSFF5210 2002trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2004 - Not Available

Abstract:
Text: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , . 1.3, 03-Jun-04 www.vishay.com 1 TSFF5210 Vishay Semiconductors Electrical Characteristics , www.vishay.com 2 Document Number 81090 Rev. 1.3, 03-Jun-04 VISHAY TSFF5210 Vishay Semiconductors , TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120 www.vishay.com 4


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PDF TSFF5210 TSFF5210 D-74025 03-Jun-04
2004 - TSFF5210

Abstract:
Text: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise , Number 81090 Rev. 1.4, 23-Jun-04 TSFF5210 VISHAY Vishay Semiconductors Tamb < 50° t p/ T , . Attenuation vs. Frequency www.vishay.com 3 TSFF5210 VISHAY Vishay Semiconductors Package


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PDF TSFF5210 TSFF5210 D-74025 23-Jun-04
2004 - Not Available

Abstract:
Text: VISHAY TSFF5210 Vishay Semiconductors High Speed IR Emitting Diode in 5 mm (T-1¾) Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , V V mV/K µA pF Document Number 81090 Rev. 1.1, 13-Apr-04 www.vishay.com 1 TSFF5210 Vishay , TSFF5210 Vishay Semiconductors I e - Radiant Intensity ( mW/sr ) 1000 e, I e -Attenuation (dB , -Apr-04 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12120


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PDF TSFF5210 TSFF5210 D-74025 13-Apr-04
2005 - Not Available

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Mar-05 VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , -Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 15909


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PDF TSFF5210 TSFF5210 2002/95/EC 2002/9ake D-74025 08-Mar-05
2011 - Not Available

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero , 94 8390 DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH , fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) ± 10 P (nm) 870 tr (ns) 15 TSFF5210 180 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSFF5210 , 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W TSFF5210 Vishay Semiconductors High


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PDF TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11
2005 - Not Available

Abstract:
Text: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH , TSFF5210 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , -Mar-05 VISHAY TSFF5210 Vishay Semiconductors 1.25 1000 I F -Forward Current ( mA ) t p/ T= 0.01 0.02 , -Mar-05 www.vishay.com 3 TSFF5210 Vishay Semiconductors Package Dimensions in mm VISHAY 15909


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PDF TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05
Infrared sensor TSOP 1738

Abstract:
Text: ) Leaded TSFF5210 (870nm) TSHG6200 (850nm) TSHG8200 (830nm) Rottenberger / Director Regional , TSFF5210 (870nm) TSHG6200 (850nm) TSHG8200 (830nm) Rottenberger / Director Regional Marketing , power emitter for infrared illumination > TSHG6200 / 8200 / TSFF5210 > VSMG3700 / VSMG2700 § IGTB


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PDF
sensor BPW34 application note

Abstract:
Text: TSFF5210 10 180 15 870 TSAL6100 SMD 5 mm 10 130 800 940 VSMB20.X01 12 , 32 mW/sr at 100 mA · TSFF5210 = ± 10° · Switching at 15 ns · Switching at 15 ns · , VSMF4710 VSMF4720 VSMB20.X01 VSMB20.X01 VSMG20.X01 VSMY285.X01 TSFF5210 TSFF5410 TSFF5510 , TSFF5210 a 48 65 650 30 48 940 j = ± 38° TSHG8400 20 50 890 j = ± 18-22


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PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor APPLICATION NOTE BpW34 BP104 application note BPW34 application note
sensor BPW34 application note

Abstract:
Text: APPLICATION GUIDE Part Number VSLY5850 TSFF5210 TSAL6100 VSMB2000X01 VSMB2020X01 VSMY2850G VSMY2850RG 4/18 , · Ie = 32 mW/sr at 100 mA · Switching at 15 ns New Products · TSFF5410 = ± 22° · TSFF5210 = ± , VSMB20.X01 VSMG20.X01 VSMY2850G, -RG TSFF5210 5 mm TSFF5410 TSFF5510 12 12 10 10 22 38 60 Angle of Half , 15 15 TSAL4400 VSLB3940 TSHF5210 TSHF5410 TSFF5210 TSFF5410 VSLY5850 TSFF5510 TSHG5210 TSHG6210


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PDF VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 TEMD6200 touch sensitive siren using transistor BP104 application note VSMY2850 TSOP58038 vo2223 TEMD6200FX01
2000 - IEC60601-2-22

Abstract:
Text: TSFF5210 2.7 TSML3710 0.36 TSFF5400 2.1 TSPF5400 2.2 2.4 TSFF5410 2.2


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PDF TSSF4500 TSHA4400 TSSS2600 TSHA4401 TSTA7100 TSHA5200 TSTA7300 TSHA5201 TSTA7500 TSHA5202 IEC60601-2-22 APPLICATION CIRCUIT OF TSAL4400 IEC608251 TSAL5100 TSAL4400 LD50 IEC60825-1 CQY37N CQY36N voting elements
751-1201-ND

Abstract:
Text: TSAL6200 TSAL6400 TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 TSHG6400 TSHG8200


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PDF 751-1003-ND 751-1004-ND 751-1023-ND 751-1041-ND 751-10TSAL7600 TSFF5210 TSFF5410 TSHF5210 TSHF5410 TSHG6200 751-1201-ND BPW21R 751-1001-ND 751-1013-ND 751-1213-ND 751-1002-ND BPW41N 751-1015-ND 751-1043-1-ND 751-1203-ND
2011 - TSHG8200

Abstract:
Text: VSMY2850RG VSMY3850 TSFF5210 870 TSFF5410 TSFF5510 VSMF4720 15 1 IF=100 mA DISCLAIMER All


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PDF VMN-PT0211-1101 TSHG8200 CCTV infrared VSMY1850
2013 - Not Available

Abstract:
Text: ± 38 VSMF4720 2 ± 60 3 TSFF5210 1 170 VSMY7852X01 870 Little Star


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PDF VSMY3850 TSHG8200 TSHG5510 VSMY7850X01 TSFF5410 TSFF5510 VSMF4720 TSFF5210 VSMY7852X01 VMN-PT0211-1311
diode SR 360

Abstract:
Text: TSAL7200 TSAL7300 TSAL7400 TSAL7600 TSFF5210 TSFF5410 TSHA4400 TSHA4401 TSHA5200 TSHA5201


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PDF 11-Sep-08 diode SR 360 IEC 62471 60825-1 diode sr 60 IEC-60825 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
TSSP4038

Abstract:
Text: TSFF5210 10 180 15 870 TSAL6100 10 130 800 940 VSMB2000X01 12 40 15 , 15 ns • TSFF5410 ϕ = ± 22° • TSFF5210 ϕ = ± 10° • VSMF4710 (870 nm) Photo , 10 X X X X 850 100 15 TSFF5210 Dome lens Throughhole Low Transmit , 15 TSAL4400 40 65 15 VSLB3940 TSFF5410 TSFF5210 TSHF5410 TSHF5210 Photo


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PDF VMN-MS6520-1311 TSSP4038
2015 - Vishay 40d

Abstract:
Text: 3 600 20 850 Top view TSFF5210 10 180 15 870 TSAL6100 10 130 , 15 ns • TSFF5410 ϕ = ± 22° • TSFF5210 ϕ = ± 10° • VSMF4710 (870 nm) Photo , 35 20 VSMY2850G, -RG 10 X X X X 850 100 15 TSFF5210 Dome lens


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PDF VMN-MS6520-1506 Vishay 40d Vishay TYPE 40D AC 1506 panasonic inverter dv 707
tept5600 response time

Abstract:
Text: 25 40 800 tSal7600 940 30 25 800 tSFF5210 Package 870 10 180


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PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 SMD Transistor 1020 BPV11F Photo interrupter application notes "Photo Interrupter" dual transistor TEMT6000 cny70 datasheet TCND5000 CNY70
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