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TSAL6200 Vishay Semiconductors Infrared LED, 950nm,
TSAL6200 Atmel Corporation Infrared LED, 5mm, 1-Element, 940nm, PLASTIC, 2 PIN
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
TSAL6200 Vishay Intertechnologies Avnet 20,000 $0.34 $0.12
TSAL6200 Vishay Semiconductors New Advantage Corporation 141,002 $0.22 $0.20
TSAL6200 Vishay Intertechnologies Avnet - $0.51 $0.17
TSAL6200 Vishay Intertechnologies Farnell element14 51,360 £0.10 £0.06
TSAL6200 Vishay Intertechnologies element14 Asia-Pacific 40,257 $0.62 $0.16
TSAL6200 Vishay Intertechnologies Chip1Stop 377 $0.67 $0.11
TSAL6200 Vishay Intertechnologies Schukat electronic 1,700 €0.09 €0.05
TSAL6200 Vishay Intertechnologies Newark element14 2,319 $0.43 $0.15
TSAL6200 Vishay Intertechnologies Newark element14 40,240 $0.52 $0.17
TSAL6200 Vishay Siliconix Allied Electronics & Automation - $0.14 $0.14
TSAL6200 Vishay Intertechnologies Future Electronics 176,252 $0.11 $0.11
TSAL6200 Vishay Intertechnologies RS Components 3,200 £0.07 £0.06
TSAL6200 Vishay Intertechnologies RS Components 4,800 £0.08 £0.06
TSAL6200 Vishay Intertechnologies TME Electronic Components 10,718 $0.11 $0.07
TSAL6200 Vishay Intertechnologies Avnet - $0.50 $0.09
TSAL6200 Vishay Intertechnologies ComS.I.T. 8,000 - -
TSAL6200 Vishay Intertechnologies Rutronik - $0.08 $0.07
TSAL6200-AS21 Vishay Intertechnologies Rutronik 45,000 $0.10 $0.08
TSAL6200-ASZ Vishay Intertechnologies Avnet - €0.18 €0.09
TSAL6200-ES21 Vishay Intertechnologies TME Electronic Components 707 $0.29 $0.08
TSAL6200-ESZ Vishay Intertechnologies Rutronik 21,000 $0.10 $0.08
TSAL6200-MS12Z Vishay Intertechnologies Avnet - €0.13 €0.07
TSAL6200.. Vishay Intertechnologies Farnell element14 - £0.31 £0.06
TSAL6200.. Vishay Intertechnologies element14 Asia-Pacific 377 $0.62 $0.14
TSAL6200... Vishay Intertechnologies element14 Asia-Pacific 564 $0.62 $0.14
TSAL6200... Vishay Intertechnologies Farnell element14 - £0.33 £0.07
TSAL6200AS21 Vishay Intertechnologies Avnet - €0.13 €0.07
TSAL6200ES21 Vishay Intertechnologies Avnet - €0.13 €0.07

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TSAL6200 datasheet (3)

Part Manufacturer Description Type PDF
TSAL6200 Vishay LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) Original PDF
TSAL6200 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package Original PDF
TSAL6200 Vishay Telefunken GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package Original PDF

TSAL6200 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , +1-408-970-5600 1 (5) TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward , -May-99 TSAL6200 Vishay Telefunken 1000 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current ( A ) 101 , FaxBack +1-408-970-5600 3 (5) TSAL6200 Vishay Telefunken 0° I e rel ­ Relative Radiant Intensity


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PDF TSAL6200 TSAL6200 D-74025 20-May-99
2011 - TSAL6200

Abstract: J-STD-051
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ , : emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 18-Jul-08 J-STD-051
2004 - TSAL6200

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -May-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 3 TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 11-May-04
TSAL6200

Abstract: temic infrared
Text: Temic Description Semiconductors TSAL6200 GaAs/GaAlAs IR Emitting Diode in 0 5 mm (T-1%) Package TSAL6200 is a high efficiency infrared emitting diode in GaAIAs on GaAs technology, molded in , Rev. A5, 06-Mar-98 1(6) TSAL6200 Absolute Maximum Ratings Tamb -25 C Parameter Reverse , -Mar-98 Temic Semiconductors TSAL6200 Typical C haracteristics (Tamb = 25°C unless otherwise specified , ) Rev. A5, 06-Mar-98 TSAL6200 Temic Semiconductors 13602 lp -Forward Current ( mA


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PDF TSAL6200 TSAL6200 D-74025 06-Mar-98 temic infrared
TSAL6200

Abstract: infrared emitters and detectors data book temic
Text: TSAL6200 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description TSAL6200 is a high , . A4, 04-Nov-97 1 (6) TSAL6200 Absolute Maximum Ratings Tamb = 25_C Parameter Reverse , -Nov-97 TSAL6200 Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF ­ Forward Current ( mA , ) 104 Figure 6. Radiant Intensity vs. Forward Current 3 (6) TSAL6200 1.25 Fe rel ­ , Semiconductors Rev. A4, 04-Nov-97 TSAL6200 Dimensions in mm 96 12123 TELEFUNKEN Semiconductors Rev. A4


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PDF TSAL6200 TSAL6200 D-74025 04-Nov-97 infrared emitters and detectors data book temic
2008 - TSAL6200

Abstract: tsal62 high power infrared led Infrared Emitting Diode
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm , WEEE 2002/96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs , (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note Test conditions see table "Basic , : 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM , 107 TSAL6200 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 18-Jul-08 tsal62 high power infrared led Infrared Emitting Diode
2014 - Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6200 is an infrared, 940 nm emitting , Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
2001 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1 ) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6200 , . Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Semiconductors 1000 , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 20-May-99
2011 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ , : emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6200 , . Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 1000 I e , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 20-May-99
2004 - TSAL6200

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -May-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 3 TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 11-May-04
diode chn 940

Abstract: chn 940 CT-98
Text: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm (T-VA) Package Description , sm oke detectors Rev. A6, 15-O ct-98 TSAL6200 Vishay Telefunken Absolute Maximum Ratings , -98 TSAL6200 Typical Characteristics (Tamb = 25° Vishay Telefunken unless otherw ise specified) 94 , -98 3 (6 ) TSAL6200 Vishay Telefunken VÍSHÁY 02 Ip - Forw ard Current ( inA ) L4291 , 4 (6 ) Rev. A6, 15-O ct-98 TSAL6200 Dimensions in mm Vishay Telefun ken . 54


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PDF TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98
2004 - Not Available

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.9, 23-Jun-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -Jun-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.9, 23-Jun-04 www.vishay.com 3 TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 23-Jun-04
2004 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs , www.vishay.com 1 TSAL6200 VISHAY Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless , Document Number 81010 Rev. 2.0, 01-Oct-04 TSAL6200 VISHAY Vishay Semiconductors 1000 I e ­ , . Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL6200 VISHAY Vishay


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PDF TSAL6200 TSAL6200 D-74025 01-Oct-04
1999 - Not Available

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) TSAL6200 Vishay Telefunken Basic , . Forward Current vs. Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay , www.vishay.de • FaxBack +1-408-970-5600 3 (5) TSAL6200 Vishay Telefunken 0° I e rel – Relative


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PDF TSAL6200 TSAL6200 D-74025 20-May-99
Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6200 is an infrared, 940 nm emitting , Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2012 - Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , ?99902 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 60 (deg) ± 17 p (nm) 940 tr (ns) 800 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 Note · MOQ , ?91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
2012 - 21211

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , ?99902 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 60 (deg) ± 17 p (nm) 940 tr (ns) 800 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 Note · MOQ , ?91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW


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PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 21211
2007 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , TSAL6200 Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter , -Nov-06 TSAL6200 Vishay Semiconductors 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 , www.vishay.com 3 TSAL6200 Vishay Semiconductors 0° 10° 20° 30° I e rel - Relative Radiant


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PDF TSAL6200 TSAL6200 08-Apr-05
2003 - Not Available

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , TSAL6200 Vishay Semiconductors Parameter Reverse Current Junction Capacitance Radiant Intensity Radiant , . Forward Voltage www.vishay.com 2 Document Number 81010 Rev. 7, 24-Jun-03 VISHAY TSAL6200 , -Jun-03 www.vishay.com 3 TSAL6200 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12126


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PDF TSAL6200 TSAL6200 D-74025 24-Jun-03
2001 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1 ) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6200 , . Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 1000 I e , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 Vishay


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PDF TSAL6200 TSAL6200 D-74025 20-May-99
2015 - Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , : For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSAL6200 is an , ) tr (ns) 72 ± 17 940 15 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 PACKAGING REMARKS PACKAGE FORM Bulk , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200 www.vishay.com Vishay Semiconductors 120


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PDF TSAL6200 TSAL6200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2005 - Not Available

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , Number 81010 Rev. 2.0, 01-Oct-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -Oct-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Document Number 81010 Rev. 2.0, 01-Oct-04 www.vishay.com 3 TSAL6200 Vishay Semiconductors 0° 1.25


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PDF TSAL6200 TSAL6200 08-Apr-05
Infrared sensor TSOP 1738

Abstract: automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100
Text: 's output pulse in response to the TSAL6200 IR emitter signal varies in proportion to the amount of light , stable at all ranges. TSAL6200 Infrared Emitter Signal 100 ms 6.9 L 38 kHz burst , . +3 V TSAL6200 100 ms high 400 ms low 470 38 kHz TSAL6200 For more information, send an


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PDF VMN-PL0438-xxxx Infrared sensor TSOP 1738 automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100
3 mm ir receiver

Abstract: TSAL6200* transmitter very long range ir remote control Telefunken ir receiver TSAL6200 transmitter TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6400
Text: TSAL6200 emitter, for example, at 500 mA pulsed forward current leads to an intensity of 300 mW/sr. These , 950 33 130 ± 10° TSAL6100 TSAL6200 TSAL7200 5 mm 5 mm 5 mm 950 950 950 33 , . 300 mW is a value which can be achieved with an emitter TSAL6200 operating at a peak forward current


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PDF 870nm 950nm. 3 mm ir receiver TSAL6200* transmitter very long range ir remote control Telefunken ir receiver TSAL6200 transmitter TSAL4400 ir transmitter receiver sensors TSAL5100 TSAL7200 TSAL6400
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