The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C

TSAL6200 application circuit Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
remote control receiver ir tv schematic

Abstract: TSAL6200 application circuit tSoP38xxx rc6 Infrared remote control sony tv ir remote control TSOP38438 TSOP58438 TSOP75436W TSOP38240 tSoP75xxxW
Text: AGC Band pass Demodulator OUT 1, 4 PIN GND Control circuit Figure 2. Highly integrated TSAL6200 Emitter 0.9 TSOP58xxx RC Receiver Relative Sensitivity 0.8 0.5 , . Circuit schematic 3 1 0.6 µC VO GND VS + VS C1 OUT 2 IR receiver TSHG8400 Emitter 0.7 VS Circuit Vishay's remote control receivers have an industry leading , Semiconductors Application Package Part Number Carrier Frequency (kHz) Dimensions LxWxH (mm


Original
PDF VMN-SG2154-1010 remote control receiver ir tv schematic TSAL6200 application circuit tSoP38xxx rc6 Infrared remote control sony tv ir remote control TSOP38438 TSOP58438 TSOP75436W TSOP38240 tSoP75xxxW
2014 - Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6200 is an infrared, 940 nm emitting , Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200


Original
PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
2011 - TSAL6200 application circuit

Abstract: TSOP58P38 TSAL6200 TSOP58P proximity detector sensor
Text: APPLICATION CIRCUIT 17170_7 3 33 k VS Transmitter with TSALxxxx 1 Input AGC Band pass Demodulator OUT 2 PIN Control circuit GND R1 IR receiver VS Circuit 16833_5 + VS , should not be pulled down to a level below 1 V by the external circuit . The capacitive load at the , Ev = 0, test signal see fig. 1, IR diode TSAL6200 , IF = 400 mA Transmission distance UNIT , (Tamb = 25 °C, unless otherwise specified) 1.0 Optical Test Signal (IR diode TSAL6200 , IF = 0.4 A


Original
PDF TSOP58P. 2002/95/EC 2002/96/EC 11-Mar-11 TSAL6200 application circuit TSOP58P38 TSAL6200 TSOP58P proximity detector sensor
2011 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , TSAL6200 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6200 Note MOQ , : emittertechsupport@vishay.com www.vishay.com 1 TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940


Original
PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
2012 - TSAL6200 application circuit

Abstract: No abstract text available
Text: APPLICATIONS (AGC2/AGC8) TSOP4P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170_7 R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS 3 33 k VS 1 Input AGC Band pass Demodulator OUT Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 are optional to , output voltage VO should not be pulled down to a level below 1 V by the external circuit . The capacitive , TSAL6200 , IF = 400 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width tolerance: tpi - 5


Original
PDF TSSP4P38 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSAL6200 application circuit
Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6200 is an infrared, 940 nm emitting , Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 60 ± 17 940 800 TSAL6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6200 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6200


Original
PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2012 - Not Available

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , ?99902 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 60 (deg) ± 17 p (nm) 940 tr (ns) 800 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 Note · MOQ , ?91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW


Original
PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11
2011 - Not Available

Abstract: No abstract text available
Text: by request STANDARD APPLICATIONS (AGC2/AGC8) TSOP58P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170_7 R1 IR receiver VS + VS C1 OUT GND VO µC GND 3 33 k VS 1 Input AGC Band pass Demodulator OUT Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 , circuit . The capacitive load at the output should be less than 2 nF. * Please see document "Vishay , -Feb-11 www.vishay.com 1 Circuit TSOP58P. Vishay Semiconductors IR Receiver Modules for Mid Range Proximity


Original
PDF TSOP58P. 2002/95/EC 2002/96/EC 18-Jul-08
TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , +1-408-970-5600 1 (5) TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward , -May-99 TSAL6200 Vishay Telefunken 1000 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current ( A ) 101 , FaxBack +1-408-970-5600 3 (5) TSAL6200 Vishay Telefunken 0° I e rel ­ Relative Radiant Intensity


Original
PDF TSAL6200 TSAL6200 D-74025 20-May-99
2012 - 21211

Abstract: No abstract text available
Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , ?99902 DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , PRODUCT SUMMARY COMPONENT TSAL6200 Ie (mW/sr) 60 (deg) ± 17 p (nm) 940 tr (ns) 800 Note · Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6200 Note · MOQ , ?91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW


Original
PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 21211
TSAL6200

Abstract: temic infrared
Text: Temic Description Semiconductors TSAL6200 GaAs/GaAlAs IR Emitting Diode in 0 5 mm (T-1%) Package TSAL6200 is a high efficiency infrared emitting diode in GaAIAs on GaAs technology, molded in , Rev. A5, 06-Mar-98 1(6) TSAL6200 Absolute Maximum Ratings Tamb -25 C Parameter Reverse , -Mar-98 Temic Semiconductors TSAL6200 Typical C haracteristics (Tamb = 25°C unless otherwise specified , ) Rev. A5, 06-Mar-98 TSAL6200 Temic Semiconductors 13602 lp -Forward Current ( mA


OCR Scan
PDF TSAL6200 TSAL6200 D-74025 06-Mar-98 temic infrared
TSAL6200

Abstract: infrared emitters and detectors data book temic
Text: TSAL6200 GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description TSAL6200 is a high , . A4, 04-Nov-97 1 (6) TSAL6200 Absolute Maximum Ratings Tamb = 25_C Parameter Reverse , -Nov-97 TSAL6200 Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 IF ­ Forward Current ( mA , ) 104 Figure 6. Radiant Intensity vs. Forward Current 3 (6) TSAL6200 1.25 Fe rel ­ , Semiconductors Rev. A4, 04-Nov-97 TSAL6200 Dimensions in mm 96 12123 TELEFUNKEN Semiconductors Rev. A4


Original
PDF TSAL6200 TSAL6200 D-74025 04-Nov-97 infrared emitters and detectors data book temic
2004 - TSAL6200

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -May-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 3 TSAL6200 Vishay


Original
PDF TSAL6200 TSAL6200 D-74025 11-May-04
2010 - TSAL6200 application circuit

Abstract: circuit diagram for IR receiver TSOP4P38 TSOP4P ir proximity sensor circuit diagram 83305 ir transmitter and receiver sensor ir transmitter receiver sensors TSAL6200 ir receiver extended range
Text: APPLICATION CIRCUIT 17170_7 3 33 k VS 1 Input AGC Band pass Demodulator OUT 2 PIN Document Number: 83305 Rev. 1.1, 23-Sep-10 Control circuit GND Transmitter with TSALxxxx R1 IR receiver VS Circuit 16833_5 + VS C1 µC OUT GND VO GND The external , the external circuit . The capacitive load at the output should be less than 2 nF. www.vishay.com , see fig. 1, IR diode TSAL6200 , IF = 400 mA Transmission distance UNIT V 45 m 100


Original
PDF 2002/95/EC 2002/96/EC 18-Jul-08 TSAL6200 application circuit circuit diagram for IR receiver TSOP4P38 TSOP4P ir proximity sensor circuit diagram 83305 ir transmitter and receiver sensor ir transmitter receiver sensors TSAL6200 ir receiver extended range
2012 - TSAL6200 application circuit

Abstract: No abstract text available
Text: APPLICATIONS (AGC2/AGC8) TSOP58P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170_7 R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS 3 33 k VS 1 Input AGC Band pass Demodulator OUT Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 are optional to , output voltage VO should not be pulled down to a level below 1 V by the external circuit . The capacitive , diode TSAL6200 , IF = 400 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width tolerance


Original
PDF TSSP58P38 TSOP58P. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSAL6200 application circuit
2012 - TSSP4P38

Abstract: TSAL6200 application circuit IR Sensor transmitter and receiver diode ir transmitter receiver sensors
Text: RANGE SENSOR TSSP4P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170-10 3 33 k VS 1 Input AGC Band pass Demodulator OUT R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 are optional to improve , . 1, IR diode TSAL6200 , IF = 200 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width , specified) Ee Optical Test Signal 1.0 tpo - Output Pulse Width (ms) (IR diode TSAL6200 , IF = 0.4 A


Original
PDF TSSP4P38 TSSP4P38 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSAL6200 application circuit IR Sensor transmitter and receiver diode ir transmitter receiver sensors
2012 - TSSP58P38

Abstract: TSAL6200 application circuit TSAL6200 transmitter
Text: RANGE SENSOR TSSP58P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170-10 3 33 k VS 1 Input AGC Band pass Demodulator OUT R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 are optional to improve , signal see fig. 1, IR diode TSAL6200 , IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 , , unless otherwise specified) Ee Optical Test Signal (IR diode TSAL6200 , IF = 0.4 A, 30 pulses, f = f0, t


Original
PDF TSSP58P38 TSSP58P38 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSAL6200 application circuit TSAL6200 transmitter
2010 - TSOP58P38

Abstract: ir proximity sensor circuit diagram TSOP58P TSAL6200 photo diode proximity sensor ir transmitter receiver sensors paper sensor - vishay
Text: APPLICATION CIRCUIT 17170_7 3 33 k VS 1 Input AGC Band pass Demodulator OUT 2 PIN Document Number: 83310 Rev. 1.0, 25-Mar-10 Control circuit GND Transmitter with TSALxxxx R1 IR receiver VS Circuit 16833_5 + VS C1 µC OUT GND VO GND The external , the external circuit . The capacitive load at the output should be less than 2 nF. www.vishay.com , see fig. 1, IR diode TSAL6200 , IF = 400 mA Transmission distance UNIT V 45 m 100


Original
PDF TSOP58P. 2002/95/EC 2002/96/EC 18-Jul-08 TSOP58P38 ir proximity sensor circuit diagram TSOP58P TSAL6200 photo diode proximity sensor ir transmitter receiver sensors paper sensor - vishay
2013 - TSAL6200 application circuit

Abstract: No abstract text available
Text: RANGE SENSOR TSSP4P38 BLOCK DIAGRAM 16833_5 APPLICATION CIRCUIT 17170-10 3 33 k VS 1 Input AGC Band pass Demodulator OUT R1 IR receiver VS Circuit C1 OUT GND VO µC GND + VS Transmitter with TSALxxxx 2 PIN Control circuit GND The external components R1 and C1 are optional to improve , Ev = 0, test signal see fig. 1, IR diode TSAL6200 , IF = 200 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test , (ms) (IR diode TSAL6200 , IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) 0.9 0.8 0.7 0.6 0.5 0.4 0.3


Original
PDF TSSP4P38 TSSP4P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 TSAL6200 application circuit
2001 - TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1 ) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6200 , . Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Semiconductors 1000 , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 Vishay


Original
PDF TSAL6200 TSAL6200 D-74025 20-May-99
2010 - TSOP4P38

Abstract: TSOP4P AGC-8 TSAL6200 ir proximity sensor circuit diagram ir receiver extended range circuit diagram for IR receiver TSAL6200 transmitter
Text: APPLICATION CIRCUIT 17170_7 3 33 k VS 1 Input AGC Band pass Demodulator OUT 2 PIN Document Number: 83305 Rev. 1.0, 16-Mar-10 Control circuit GND Transmitter with TSALxxxx R1 IR receiver VS Circuit 16833_5 + VS C1 µC OUT GND VO GND The external , the external circuit . The capacitive load at the output should be less than 2 nF. www.vishay.com , see fig. 1, IR diode TSAL6200 , IF = 400 mA Transmission distance UNIT V 45 m 100


Original
PDF 2002/95/EC 2002/96/EC 18-Jul-08 TSOP4P38 TSOP4P AGC-8 TSAL6200 ir proximity sensor circuit diagram ir receiver extended range circuit diagram for IR receiver TSAL6200 transmitter
TSAL6200

Abstract: No abstract text available
Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6200 , . Ambient Temperature Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 1000 I e , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6200 Vishay


Original
PDF TSAL6200 TSAL6200 D-74025 20-May-99
2004 - TSAL6200

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -May-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.8, 11-May-04 www.vishay.com 3 TSAL6200 Vishay


Original
PDF TSAL6200 TSAL6200 D-74025 11-May-04
diode chn 940

Abstract: chn 940 CT-98
Text: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm (T-VA) Package Description , sm oke detectors Rev. A6, 15-O ct-98 TSAL6200 Vishay Telefunken Absolute Maximum Ratings , -98 TSAL6200 Typical Characteristics (Tamb = 25° Vishay Telefunken unless otherw ise specified) 94 , -98 3 (6 ) TSAL6200 Vishay Telefunken VÍSHÁY 02 Ip - Forw ard Current ( inA ) L4291 , 4 (6 ) Rev. A6, 15-O ct-98 TSAL6200 Dimensions in mm Vishay Telefun ken . 54


OCR Scan
PDF TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98
2004 - Not Available

Abstract: No abstract text available
Text: VISHAY TSAL6200 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81010 Rev. 1.9, 23-Jun-04 www.vishay.com 1 TSAL6200 Vishay Semiconductors Basic , -Jun-04 VISHAY TSAL6200 Vishay Semiconductors 101 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current , Temperature Document Number 81010 Rev. 1.9, 23-Jun-04 www.vishay.com 3 TSAL6200 Vishay


Original
PDF TSAL6200 TSAL6200 D-74025 23-Jun-04
Supplyframe Tracking Pixel