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TSAL6100 Atmel Corporation Infrared LED, 5mm, 1-Element, 940nm, PLASTIC, 2 PIN
TSAL6100 Vishay Semiconductors Infrared LED, 940nm,
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
TSAL6100 Vishay Intertechnologies RS Components 9,700 £0.15 £0.10
TSAL6100 Vishay Intertechnologies Avnet 13,630 $0.50 $0.12
TSAL6100 Vishay Intertechnologies element14 Asia-Pacific 15,821 $0.77 $0.18
TSAL6100 Vishay Intertechnologies Avnet - $0.23 $0.10
TSAL6100 Vishay Intertechnologies Avnet - $0.51 $0.17
TSAL6100 Vishay Intertechnologies Chip1Stop 774 $0.84 $0.12
TSAL6100 Vishay Intertechnologies Newark element14 10,778 $0.49 $0.15
TSAL6100 Vishay Intertechnologies Newark element14 3,760 $0.51 $0.17
TSAL6100 Vishay Intertechnologies Rutronik 8,000 $0.08 $0.06
TSAL6100 Vishay Siliconix Allied Electronics & Automation 124 $0.20 $0.16
TSAL6100 Vishay Intertechnologies Future Electronics 32,705 $0.11 $0.11
TSAL6100 Vishay Intertechnologies ComS.I.T. 4,000 - -
TSAL6100 Vishay Intertechnologies RS Components 2,750 £0.17 £0.10
TSAL6100 Vishay Intertechnologies TME Electronic Components 6,557 $0.12 $0.07
TSAL6100 Vishay Semiconductors New Advantage Corporation 169,768 $0.25 $0.23
TSAL6100-AS12Z Vishay Intertechnologies TME Electronic Components 1,084 $0.31 $0.10
TSAL6100-AS12Z Vishay Intertechnologies Avnet - €0.18 €0.09
TSAL6100-AS12Z Vishay Intertechnologies Chip1Stop 2,000 $0.11 $0.10
TSAL6100-ES21 Vishay Intertechnologies Avnet 10,000 €0.18 €0.09
TSAL6100-MS12 Vishay Intertechnologies TME Electronic Components 669 $0.31 $0.10
TSAL6100-MS12 Vishay Intertechnologies Avnet 1,000 €0.13 €0.06
TSAL6100. Vishay Intertechnologies Newark element14 13,630 $0.52 $0.17

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TSAL6100 datasheet (1)

Part Manufacturer Description Type PDF
TSAL6100 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in diam 5 mm (T-1 3/4) Package Original PDF

TSAL6100 Datasheets Context Search

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TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , +1-408-970-5600 1 (5) TSAL6100 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward , -May-99 TSAL6100 Vishay Telefunken 1000 I e ­ Radiant Intensity ( mW/sr ) I F ­ Forward Current ( A ) 101 , FaxBack +1-408-970-5600 3 (5) TSAL6100 Vishay Telefunken 1.25 1.0 Ie rel ­ Relative Radiant


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PDF TSAL6100 TSAL6100 D-74025 20-May-99
Not Available

Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s TSAL6100 GaAs/GaAlAs IR Emitting Diode in 0 5 mm ('T-13 A) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , Rev. A l, 18-Aug-98 1(5) TSAL6100 Basic Characteristics Tarnb = 25°C Parameter Forward , -Aug-98 Tem ic S e m i c o n d u c t o r s TSAL6100 96 11987 tp - Pulse D uration ( m s ) 14438 , IntensityXPower vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A l, 18-Aug-98 3 (5) TSAL6100 0


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PDF TSAL6100 TSAL6100 D-74025 18-Aug-98
2011 - TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , in DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high , PRODUCT SUMMARY COMPONENT TSAL6100 Ie (mW/sr) 130 (deg) ± 10 P (nm) 940 tr (ns) 800 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSAL6100 Note MOQ , - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W TSAL6100 Vishay Semiconductors High


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11
TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6100 , . Ambient Temperature Document Number 81009 Rev. 2, 20-May-99 TSAL6100 Vishay Telefunken 1000 I e , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6100 Vishay


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PDF TSAL6100 TSAL6100 D-74025 20-May-99
2005 - TSAL6100

Abstract: TSAL61
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , . 1.4, 05-Mar-05 www.vishay.com 1 TSAL6100 Vishay Semiconductors Electrical Characteristics , Number 81009 Rev. 1.4, 05-Mar-05 VISHAY TSAL6100 Vishay Semiconductors 101 I e ­ Radiant , TSAL6100 Vishay Semiconductors 0° Ie rel ­ Relative Radiant Intensity VISHAY 1.25 10 ° 20 °


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PDF TSAL6100 TSAL6100 D-74025 05-Mar-05 TSAL61
2011 - TSAL6100 application

Abstract: TSAL6100 GaAs 1000 nm Infrared Diode,
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs , /96/EC DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with , ) 130 ± 10 940 800 TSAL6100 Note Test conditions see table "Basic Characteristics , pcs/bulk T-1¾ TSAL6100 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER , technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSAL6100 Vishay


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 TSAL6100 application GaAs 1000 nm Infrared Diode,
2011 - Not Available

Abstract: No abstract text available
Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6100 is an infrared, 940 , 940 800 TSAL6100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 , AT www.vishay.com/doc?91000 TSAL6100 www.vishay.com Vishay Semiconductors 120 160 IF


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 11-Mar-11
2014 - Not Available

Abstract: No abstract text available
Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6100 is an infrared, 940 , 940 800 TSAL6100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 , AT www.vishay.com/doc?91000 TSAL6100 www.vishay.com Vishay Semiconductors 120 160 IF


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
2001 - TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1 ) Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6100 , . Ambient Temperature Document Number 81009 Rev. 2, 20-May-99 TSAL6100 Vishay Telefunken 1000 I e , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6100 Vishay


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PDF TSAL6100 TSAL6100 D-74025 20-May-99
2004 - Not Available

Abstract: No abstract text available
Text: VISHAY TSAL6100 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81009 Rev. 1.4, 04-May-04 www.vishay.com 1 TSAL6100 Vishay Semiconductors Electrical , Document Number 81009 Rev. 1.4, 04-May-04 VISHAY TSAL6100 Vishay Semiconductors 101 I e ­ , -May-04 www.vishay.com 3 TSAL6100 Vishay Semiconductors 0° Ie rel ­ Relative Radiant Intensity VISHAY 1.25


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PDF TSAL6100 TSAL6100 D-74025 04-May-04
2015 - Not Available

Abstract: No abstract text available
Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSAL6100 is an , ) ϕ (deg) λp (nm) tr (ns) 170 ± 10 940 15 TSAL6100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6100 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6100


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PDF TSAL6100 TSAL6100 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - Not Available

Abstract: No abstract text available
Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , ?99902 DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power , source for smoke detectors PRODUCT SUMMARY COMPONENT TSAL6100 Ie (mW/sr) 130 (deg) ± 10 p (nm) 940 , ORDERING CODE TSAL6100 Note · MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6100 www.vishay.com Vishay Semiconductors


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2008 - TSAL6100

Abstract: high power infrared led
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm , WEEE 2002/96/EC DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs , COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 130 ± 10 940 800 TSAL6100 Note , REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL6100 Note MOQ: minimum , : emittertechsupport@vishay.com www.vishay.com 99 TSAL6100 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 18-Jul-08 high power infrared led
2004 - TSAL6100 application

Abstract: No abstract text available
Text: VISHAY TSAL6100 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81009 Rev. 1.4, 04-May-04 www.vishay.com 1 TSAL6100 Vishay Semiconductors Electrical , Document Number 81009 Rev. 1.4, 04-May-04 VISHAY TSAL6100 Vishay Semiconductors 101 I e ­ , -May-04 www.vishay.com 3 TSAL6100 Vishay Semiconductors 0° Ie rel ­ Relative Radiant Intensity VISHAY 1.25


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PDF TSAL6100 TSAL6100 D-74025 04-May-04 TSAL6100 application
TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81009 Rev. 1.4, 28-Nov-06 www.vishay.com 1 TSAL6100 Vishay Semiconductors Electrical , -Nov-06 TSAL6100 Vishay Semiconductors 10 1 I e - Radiant Intensity (mW/sr) I F - Forward Current (A) 1000 , . 1.4, 28-Nov-06 www.vishay.com 3 TSAL6100 Vishay Semiconductors 0° 1.25 1.0 Ie rel -


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PDF TSAL6100 TSAL6100 18-Jul-08
2004 - TSAL6100 application

Abstract: TSAL6100
Text: VISHAY TSAL6100 Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1¾) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , Number 81009 Rev. 1.3, 07-Apr-04 www.vishay.com 1 TSAL6100 Vishay Semiconductors Electrical , Number 81009 Rev. 1.3, 07-Apr-04 VISHAY TSAL6100 Vishay Semiconductors 101 I e ­ Radiant , TSAL6100 Vishay Semiconductors 0° Ie rel ­ Relative Radiant Intensity VISHAY 1.25 e rel ­


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PDF TSAL6100 TSAL6100 D-74025 07-Apr-04 TSAL6100 application
1999 - Not Available

Abstract: No abstract text available
Text: TSAL6100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1¾) Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear , -May-99 www.vishay.de · FaxBack +1-408-970-5600 1 (5) TSAL6100 Vishay Telefunken Basic Characteristics Tamb = 25 , FaxBack +1-408-970-5600 2 (5) Document Number 81009 Rev. 2, 20-May-99 TSAL6100 Vishay Telefunken , Document Number 81009 Rev. 2, 20-May-99 www.vishay.de · FaxBack +1-408-970-5600 3 (5) TSAL6100


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PDF TSAL6100 TSAL6100 D-74025 20-May-99
2001 - TSAL6100

Abstract: No abstract text available
Text: TSAL6100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T­1 ) Package Description 94 8389 TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology , ­55.+100 260 350 Unit V mA mA A mW °C °C °C °C K/W www.vishay.com 1 (5) TSAL6100 , . Ambient Temperature Document Number 81009 Rev. 2, 20-May-99 TSAL6100 Vishay Semiconductors 1000 , . Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.com 3 (5) TSAL6100 Vishay


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PDF TSAL6100 TSAL6100 D-74025 20-May-99
Not Available

Abstract: No abstract text available
Text: TSAL6100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm , document “Vishay Material Category Policy”: www.vishay.com/doc?99902 TSAL6100 is an infrared, 940 , 940 800 TSAL6100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 , AT www.vishay.com/doc?91000 TSAL6100 www.vishay.com Vishay Semiconductors 120 160 IF


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PDF TSAL6100 2002/95/EC 2002/96/EC TSAL6100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2005 - TSAL6100

Abstract: infrared emitters and detectors TSAL6100 application
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , TSAL6100 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise , Document Number 81009 Rev. 1.4, 05-Mar-05 TSAL6100 VISHAY Vishay Semiconductors 1000 I e ­ , . Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL6100 VISHAY Vishay


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PDF TSAL6100 TSAL6100 08-Apr-05 infrared emitters and detectors TSAL6100 application
2007 - TSAL6100

Abstract: TSAL6100 application
Text: TSAL6100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in , TSAL6100 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified , Document Number 81009 Rev. 1.4, 28-Nov-06 TSAL6100 Vishay Semiconductors 1000 I e - Radiant , vs. Ambient Temperature www.vishay.com 3 TSAL6100 Vishay Semiconductors 0° 10° 20


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PDF TSAL6100 TSAL6100 08-Apr-05 TSAL6100 application
Infrared sensor TSOP 1738

Abstract: automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100
Text: detection. Light Curtain +5 V 100 TSAL6100 12 Si2302DS Oscillator-38 Hz +5 V . . , should be used. For the longest distance, we recommend driving the TSAL6100 infrared emitter using a 38


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PDF VMN-PL0438-xxxx Infrared sensor TSOP 1738 automatic door infrared sensor proximity sensor faucet tsop sensor infrared sensor TSOP 38 TSOP4P38 automatic faucet TSAL6100 application tsop4038 TSAL6100
2012 - TSSP4P38

Abstract: infrared distance sensor
Text: similar frequency). +5 V Light Curtain +5 V 100 Ω TSAL6100 12 Ω Si2302DS Oscillatorâ , distance, we recommend driving the TSAL6100 infrared emitter using a 38-kHz burst. Part Numbers* Presence


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PDF differ9337-2726 VMN-PL0438-1204 TSSP4P38 infrared distance sensor
APPLICATION CIRCUIT OF TSAL4400

Abstract: TSAL6400 TSAL5300 TSAL5100 TSAL4400 LD50 CQY37N CQY36N tsta7500 TSTS7102
Text: TSAL5100 TSAL5300 TSAL6100 TSAL6200 TSAL6400 TSAL7200 TSAL7300 TSAL7400 TSAL7600 TSFF5200


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PDF conta80089 TSHF5400 TSMF1000 TSMF3700 TSMS3700 TSML1000 TSML3700 TSPF5400 TSSF4500 TSSP4400 APPLICATION CIRCUIT OF TSAL4400 TSAL6400 TSAL5300 TSAL5100 TSAL4400 LD50 CQY37N CQY36N tsta7500 TSTS7102
2014 - Not Available

Abstract: No abstract text available
Text: ) Radiant Intensity (mW/sr) Angle of Half Intensity (±°) Rise Time (ns) TSAL6100 T1Â


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PDF VSMB2020X01 VSMB2943G VSMB2943SL VSMB2943RG VSMB2000X01 VSMY14940 VMN-PT0402-1404
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