The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
MW4S-12AEG (6-1617792-4) TE Connectivity (6-1617792-4) MW4S-12AEG=4 GHZ MICROWAVE RELAY

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TRW MICROWAVE

Abstract: A4S112 trw 007 diodes A4S386 A4S180 step recovery diodes A4S365 A4S370 A4S374 A4S376
Text: 8826934 T R W MICROWAVE INC 71C 01586 DT-òl -/-S Step Recovery Diodes Silicon Step Recovery Diodes Series Ä4S100, Ä4S300 Features • Excellent Conversion Efficiency • Ideal for Low or High Order Frequency Multiplication • Output Available Thru 18 GHz Description TRW Microwave Silicon Step Recovery Diodes at designed for use in high performance frequency multiplier circuits with output , TRW Microwave B 39


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PDF 4S100, 4S300 Char4S180 125psecTYP. TRW MICROWAVE A4S112 trw 007 diodes A4S386 A4S180 step recovery diodes A4S365 A4S370 A4S374 A4S376
trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw rf semiconductors 2023-12 trw 131* RF POWER TRANSISTOR mica compression trimmer capacitor TP 9382 trw rf transistors
Text: . H-318 H-319 H-320 MICROWAVE — Product sum m ary , . 5 — A study of the advantage of gold metallization in the manufacture of microwave transistors , . 15 — Match impedances in microwave amplifiers , -625 J-633 J-639 INTRODUCTION SCOPE This catalog is issued by TRW Composants Electroniques. It provides complete information on all the TRW high-frequency transistors, modules and integrated circuits


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1993 - TPV 3100

Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: have not been as conspicuous in microwave circuits as at lower frequencies. Ferrite baluns2 have been , range3. The success of these two balun types should prompt the microwave designer to ask if , to the emphatic answer: yes! Not only will baluns function at microwave frequencies, but a special , microwave balanced amplifiers. But the insertion loss differences of the baluns are better-0.2 dB for a , 1. "35/50 Watt Broadband (160 ­ 240 MHz) Push-Pull TV Amplifier Band III," TRW Application Note, TRW


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PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
1993 - TPV 3100

Abstract: TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
Text: . Balun-transformers provide the key to push-pull design, but they have not been as conspicuous in microwave circuits , should prompt the microwave designer to ask if balun-transformers can be included in circuits for , baluns function at microwave frequencies, but a special balun can be designed in microstrip form that , microwave balanced amplifiers. But the insertion loss differences of the baluns are better-0.2 dB for a , . TPV-3100 (110 W, Band III); and the TPV-5050 (50 W, UHF) available from TRW RF Semiconductors. 4


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PDF AN1034/D AN1034 TPV 3100 TPV-3100 tpv3100 trw rf semiconductors transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
MAF C22

Abstract: No abstract text available
Text: €¢ 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary , application questions: 978-250-3343 tel or adc@hittite.com Hittite Microwave Corporation Proprietary , tel or adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for , tel or adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for , adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for EKIT01-HMCAD110X – High


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PDF CP110709 EKIT01-HMCAD110X Hittit-00 MAF C22
Not Available

Abstract: No abstract text available
Text: €¢ 978-250-3373 fax • adc@hittite.com www.hittite.com Hittite Microwave Corporation Proprietary , application questions: 978-250-3343 tel or adc@hittite.com Hittite Microwave Corporation Proprietary , tel or adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for , tel or adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for , adc@hittite.com Hittite Microwave Corporation Proprietary Hardware Users Guide for EKIT01-HMCAD15XX – High


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PDF CP110709 EKIT01-HMCAD15XX Hittit-00
TRW2001

Abstract: TRW2003 TRW2020 trw 2015 TRW201 trw 2001 TRW2010 trw rf transistors TRW MICROWAVE TRW2005
Text: Ballast Resistors 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS MAXIMUM RATINGS , Series T Y P IC A L C H A R A C T ER IS T IC S TRW 2015 T '3 3 - û I TRW 2020 1 2 3 4 , Input Power TRW 2015 TRW 2020 Figure 8. Series Equivalent Input/Output Impedance VCC = 28 V SS à


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PDF Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 TRW2020 trw 2015 TRW201 trw 2001 trw rf transistors TRW MICROWAVE
TRW mmic

Abstract: SA043 Ceramic Resonator GHz OXB104C 9701455-S-J1 9G012
Text: OXB104C HBTVCO G aAs Telecom Products Features · · · · RF tuning range; 17 to 20 GHz Output power: 6 dBm Self bias: 5V/102 mA Phase noise: 109 dBc/Hz at 1 MHz offset Description and Applications 3601240.053.SA043 The OXB104C is a monolithic, HBT voltage-controlled oscillator designed for commercial digital microwave radios, wireless LANs, and military high-reliability applications. The , . Characteristic data and other specifications are subject to change without notice. © TRW Inc. Rev. 1 08/97 OXB


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PDF OXB104C V/102 SA043 OXB104C 9G01240 9701455-S-J1 TRW mmic SA043 Ceramic Resonator GHz 9701455-S-J1 9G012
8542A

Abstract: MIL-SID-810
Text: M/A-COM's Control Components Division has been a leading manufacturer of microwave components for , Rooms conforming to Federal Standard 209 Capabilities and Facilities Specialized microwave , facility has the capability to produce the industry's broadest lines of microwave components, covering the , /Engineering The sophistication of present-day microwave systems places an everincreasing demand on , maintained the most advanced microwave test capability. We were one of the first (1968) to utilize an


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ALH208C

Abstract: TRW mmic 9701455-S-J1
Text: digital microwave radios, wireless LANs, and military high-reliability applications. The bal anced , change without notice. 1 © TRW Inc. Rev. 2 08/97 ALH208C 9701455-S-J1 ALH208C Low-Noise


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PDF ALH208C ALH208C i-2500 9701455-1001-S-J1 9701455-S-J1 TRW mmic 9701455-S-J1
1993 - 2N5596

Abstract: motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors
Text: APPLICATION NOTE AN1033 Match Impedances in Microwave Amplifiers and you're on the way to successful , . Freescale Semiconductor, Inc. Prepared by: Roger DeBloois The key to successful solid-state microwave , matching will degrade stability and reduce circuit efficiency. At microwave frequencies, this , output impedance of a microwave power transistor is usually defined as the conjugate of the load , width-to-height ratio, W/H. The final design of a typical breadboard microwave amplifier is shown in Fig. 2. The


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PDF AN1033/D AN1033 2N5596 motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors
1993 - 2N5596

Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
Text: IMPEDANCES IN MICROWAVE AMPLIFIERS and you're on the way to successful solid-state designs. Here's how to , successful solid-state microwave power-amplifier design is impedance matching. In any high-frequency , microwave frequencies, this consideration is even more critical, since the transistor's bond-wire , . Make output bandwidth wider than input The output impedance of a microwave power transistor is , typical breadboard microwave amplifier is shown in Fig. 2. The ground areas on the top of the board are


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PDF AN1033/D AN1033 2N5596 motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
TRW mmic

Abstract: No abstract text available
Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for commercial digital microwave radios, wireless LANs, and military high-reliability applications , notice. © TRW Inc. Rev. 1 08/97 TLH124C 9701455-S-J1 1 TLH124C HEMT Image Rejection


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PDF TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic
9701455-S-J1

Abstract: APH184C
Text: microwave radios, wireless LANs, and military high-reliability applications. The balanced design provides , specifications are subject to change without notice. 1 © TRW Inc. Rev. 2 08/97 APH184C 9701455


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PDF APH184C APH184C SA051 9701455-S-J1 9701455-S-J1
MSH 11

Abstract: 37.5 GHz SCHOTTKY DIODE
Text: MSH108C HEMT Schottky Diode Mixer GaAs Telecom Products Features · · · · RF frequency: 35 to 40 GHz Conversion loss: 6 dB Functions as upconverter and downconverter Singly balanced mixer topology Description and Applications The MSH108C is a monolithic HEMi scnottKy diode, smgiy-Daianced mixer designed tor use in com mercial digital microwave radios, wireless LANs, and military , change without notice. 1 © TRW Inc. Rev. 2 08/97 MSH108C 9701455-S-J1 MSH108C HEMT Schottky Diode


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PDF MSH108C MSH108C 9701455-S-J1 SA038 im-2500 MSH 11 37.5 GHz SCHOTTKY DIODE
spf-5122

Abstract: spf5122 SPF-5122Z SPF5043 spf-5043 SPF5122Z spf51 SPF5043Z picoBTS SPF-5043Z
Text: The RF & Microwave Solutions Update rowband designs that cover only a few hundred MHz. Furthermore , -5122Z s-parameters and noise figure performance 62 The RF & Microwave Solutions Update The wideband , IP3 performance over temperature 64 The RF & Microwave Solutions Update package are also , Multi-stage HEMT ICs," IEEE Transactions on Microwave Theory and Techniques, Vol. 44, No. 2, February 1996 , application of new semiconductor technologies. Previously he worked at TRW (1986-2000) developing HBT


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led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m SHARP OPTO INTERRUPTER 7segment sm 4150 DIODE PK IN 5401 hoa 865 TDDG 5250 til 702 telefunken transistor
Text: 0.25 0 0.3 ±60° 110 <10 0.5 0.07 1 0.29 750 0.3 BPW 89 Microwave , 2.5 S 171 P Microwave , Fig 21 ±35° BPW 79 TO 18, Fig. 24 0 0 .2 0 0.2 Â


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PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m SHARP OPTO INTERRUPTER 7segment sm 4150 DIODE PK IN 5401 hoa 865 TDDG 5250 til 702 telefunken transistor
C4318

Abstract: trf 740 s22b 2SC4318 mur 1250 mur S22B
Text: SEMICONDUCTOR TOSHIBA TECHNICAL DATA I UjI NiJM il'.Ml'UUhJlv 2SC4318 SILICON NPN EPITAXIAL PLANAR TYPE Ko, (25C4318) VHF-UHf BAND LOW NOISE AMPUFIER APPLICATIONS. > Low Noise Figure, High Gain. • NF = l.ldB, |S2le|s=lldB(f=lGHz) MAXIMUM RATINGS {Ta = 25*C) MICROWAVE CHARACTERISTICS (Ta = 2S*C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V , romWt «rfdi hi y«u w ihnc roUMA i»4dutij fri «wtmwt wMch m»Mt» «< trw >n*nao«| tvqh


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PDF 2SC4318 25C4318) 04-0Q6 -jl50 ZSQ1318-4_ ZSC4318I 20roA 2SC4318 EH75S0 C4318 trf 740 s22b mur 1250 mur S22B
1993 - TRANSISTOR SUBSTITUTION 1993

Abstract: trw rf semiconductors trw RF POWER TRANSISTOR testing good or bad electronic components circuit trw rf transistor MIL-C-17 MRA1417-6 AN-1032 MOTOROLA TRANSISTOR 726 AN1032
Text: of non-linear RF and microwave power amplifiers, whose circuits are extremely sensitive to the , , Inc. 1993 connected to a given test circuit containing a common base microwave power transistor , two-section match consist of two /4 wave transformers. 1 AN1032 Table 1. Microwave Load Substitution , TRW MRA1417-6 broadband, high­gain transistor. Measurements were taken at 1400 MHz with input power


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PDF AN1032/D AN1032 TRANSISTOR SUBSTITUTION 1993 trw rf semiconductors trw RF POWER TRANSISTOR testing good or bad electronic components circuit trw rf transistor MIL-C-17 MRA1417-6 AN-1032 MOTOROLA TRANSISTOR 726 AN1032
TDC1002

Abstract: TDC1005B9A TDC1001 TDC1006 TDC1005 PIN-13DSB 1005B9A TMC3220 TMC2011 TDC1011
Text: Drawing, T[;=-55°C to 125°C. 2 TRW LSI Products Inc. TDC1005 Serial Shift Register Dual 64-Bit The TRW TDC1005 is a dual 64-bit positive-edge-triggered serial shift register which operates at 25MHz , (¡4 °A ®A TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (6191 457-1000 FAX: (619) 455-6314 © TRW Inc. 1990 40G00275 Rev. G-11/90 Printed in the U.S.A. TDC1005 TRvV Functional , 15 14 13 dsa 12 d1a 11 d0a 10 clk a 9 clk c 16 Pin CERDIP - B9 Package 4 TRW LSI Products Inc


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PDF TDC1005 TDC1006 TDC1011 3-18x8 21-36x4 TMC2011 TNIC2111 1-16x8 TDC1002 TDC1005B9A TDC1001 PIN-13DSB 1005B9A TMC3220
75008

Abstract: TRW POWER trw diode
Text: ■OPTEK TECHNOLOGY Optoelectronics Division TRW Electronic Components Group Product Bulletin , TRW Optoelectronics Division's infrared emitting diode chips are fabricated by solution epitaxial , centered at 935 nanometers. Since TRW has no control over the techniques the customer may use to alloy end bond chips, TRW cennot be held responsible for damage to the chips resulting from such techniques. Nor can TRW warrant the life or any other parameter after the chips have been bonded. Absolute Maximum


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PDF 0PC123 850i30 ClAl-930 75008 TRW POWER trw diode
1993 - TRANSISTOR SUBSTITUTION 1993

Abstract: MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 726 MOTOROLA TRANSISTORS AN1032 MIL-C-17 trw RF POWER TRANSISTOR TRW Microwave Detector MOTOROLA TRANSISTOR 726
Text: testing stations. Such correlation is essential to cost-effect production of non-linear RF and microwave , individual loads were connected to a given test circuit containing a common base microwave power , Go to: www.freescale.com 1 Freescale Semiconductor, Inc. AN1032 Table 1. Microwave Load , the TRW MRA1417-6 broadband, high­gain transistor. Measurements were taken at 1400 MHz with input


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PDF AN1032/D AN1032 TRANSISTOR SUBSTITUTION 1993 MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 726 MOTOROLA TRANSISTORS AN1032 MIL-C-17 trw RF POWER TRANSISTOR TRW Microwave Detector MOTOROLA TRANSISTOR 726
potentiometer MOD 534

Abstract: TRW 1020 TRW LSI Products trw 1016 free IR circuit diagram TAC1025 trw resistor TAC1020 an2495 direct replacement
Text: 50%. Based on TRW 's TDC1020 10-bit flash A/D converter, the TAC1020 achieves a 20 Msps (Mega samples , compatibility with the MOD-1020, pins 6 and 7 may be connected to +15 and -15 Volts without damage. TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619) 457-1000 FAX: (619)455-6314 19 © TRW Inc , , TAC1025 10°1-10 dr dr 20 TRW LSI Products Inc. TAC1020 and TAC1025 Functional Description , based upon TRW 's TDC1020 monolithic flash converter integrated circuit. A wideband input amplifier


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PDF TAC1020 TAC1025 10-Bit, TAC1025 MOD-1020 TDC1020 10-bit potentiometer MOD 534 TRW 1020 TRW LSI Products trw 1016 free IR circuit diagram trw resistor an2495 direct replacement
C1Z V2

Abstract: lg tv electronic diagram 2110CB TMC2330 TMC0171 TMC2242 TDC1012 MARKING lsi logic 2272H5C2 E13AS
Text: TMC2272 is fabricated in TRW 's 0MICR0N-C™ 1|iCM0S process and has fully guaranteed performance over the , three speed grades. Logic Symbol CLOCK > INPUTS \ DATA 0) / OUTPUT 0) TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619)457-1000 FAX: (619) 455-6314 © TRW Inc. 1990 40G06753 Rev. A , Perspective Translation 4 TRW LSI Products Inc. TMC2272 Figure 1. Functional Block Diagram 5 TRW LSI , edge. 6 TRW LSI Products Inc. TMC2272 TV?» Table 1. Coefficient Loading CWSEL10 00 01 10


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PDF TMC2272 40MHz 40MHz, 12-bit TMC2272 2272H5C-2 C1Z V2 lg tv electronic diagram 2110CB TMC2330 TMC0171 TMC2242 TDC1012 MARKING lsi logic 2272H5C2 E13AS
TV AMPLIFER TRANSISTOR

Abstract: 74ls371 TDC1041 TDC1038 TDC4611 z144 4611B TDC1112 TDC1048 TDC1012
Text: Package TRW LSI Products Inc. P.O. Box 2472 La Jolla, CA 92038 Phone: (619)457-1000 FAX: (619) 455-6314 23 © TRW Inc. 1990 40G06686 Rev. A-7/90 Printed in the U.S.A. TDC4611 Figure 1. Operational , =2 OPERATIONAL AMPLIFIER VOLTAGE REFERENCE 24 TRW LSI Products Inc. TDC4611 7#?if Functional , also be frequency-stable while driving capacitive loads as large as 200pF. TRW LSI Products Inc. 25 , 1.2 6.3 V Ambient Temperature 0 70 °C 26 TRW LSI Products Inc. 26 ÏDC4611 TV?!» Electrical


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PDF TDC4611 TDC4611 4611MEC TV AMPLIFER TRANSISTOR 74ls371 TDC1041 TDC1038 z144 4611B TDC1112 TDC1048 TDC1012
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