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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTORS 132 GD Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTORS 132 GD

Abstract: Power Convertibles PWR 100 0/TRANSISTORS 132 GD
Text: enhanced by the use of MOSPOWER transistors . These rugged devices permit higher frequency operation with less compli cated drive circuitry than is possible with bipolar power transistors . Reduced parts count , INPUT Voltage Range CONDITIONS MIN TYP MAX UNITS 4.65 10.8 13.5 21.6 500 5 12 15 24 5.5 13.2 16.5 26.5 VDC VDC VDC VDC VDC GD pF pArms W % %/°C mVp-p mVrms % ISOLATION Rated Voltage


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PDF PWR73XX 500VDC 170kHz UL94V-0 TRANSISTORS 132 GD Power Convertibles PWR 100 0/TRANSISTORS 132 GD
2004 - N6A07

Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
Text: ) 1.4 W Two transistors ` on' equally (a) (e) 1.6 W Single transistor " on" (a) (d) 8.8 mW/° C Single transistor ` on' (b) (d) 11.2 mW/° C Two transistors ` on' equally (a) (e) 13.2 mW/° C 114 ° C/W 89 ° C/W 76 ° C/W -55 to + 150 °C , (j-amb) Single transistor " on" (a) (d) Single transistor " on" (b) (d) Two transistors ` on , Gate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.8 nC V DS = 3 0 V , V GS = 1 0


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PDF ZXMHN6A07T8 N6A07 N6A07 TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
2006 - TRANSISTORS 132 GD

Abstract: BSS159 BSS159N L6327 gs 20 circuit diagram BSS159N L6327 F016
Text: A °C 55/150/56 see table on next page and diagram 11 Rev. 1.32 page 1 2006-12-11 , ) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2006-12-11 BSS159N Parameter , Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 0.7 1.1 , SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.32 T A=25 °C V


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PDF BSS159N OT-23 BSS159 PG-SOT-23 L6327: L6906: TRANSISTORS 132 GD BSS159 BSS159N L6327 gs 20 circuit diagram BSS159N L6327 F016
2008 - TRANSISTORS 132 GD

Abstract: d 132 smd diode D012
Text: table on next page and diagram 11 Rev. 1.32 page 1 2012-03-20 BSP135 Parameter Symbol , connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 , F=0.1 A, di F/dt =100 A/µs T A=25 °C 0.78 87 70 0.48 1.2 130 104 V ns nC 0.12 A Q gs Q gd Qg V , 3.4 5.4 5.6 28 182 146 13 5.1 8.1 8.4 42 273 ns pF Values typ. max. Unit Rev. 1.32 page 3


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PDF BSP135 PG-SOT223 BSP135 PG-SOT223 TRANSISTORS 132 GD d 132 smd diode D012
2008 - TRANSISTORS 132 GD

Abstract: BSP135 L6327 BSP135 d 132 smd diode smd diode g6
Text: page and diagram 11 Rev. 1.32 page 1 2012-03-20 BSP135 Parameter Symbol Conditions min , in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2012-03-20 , =100 A/µs T A=25 °C 0.78 87 70 0.48 1.2 130 104 V ns nC 0.12 A Q gs Q gd Qg V plateau V DD=400 V, I D , 5.1 8.1 8.4 42 273 ns pF Values typ. max. Unit Rev. 1.32 page 3 2012-03-20 BSP135 1


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PDF BSP135 PG-SOT223 BSP135 PG-SOT223 TRANSISTORS 132 GD BSP135 L6327 d 132 smd diode smd diode g6
1996 - TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Text: the designer a new standard in power transistors for switching applications. Absolute Maximum , , Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I D = 6.1A V , ) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32


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PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC
1996 - TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Text: transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100 , (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I D = 6.1A V DS , (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4


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PDF IRF737LC IRF1010 TRANSISTORS 132 GD IRF1010 IRF737LC
st25a

Abstract: ST25C transistor 2N905 2N904 2N906 ST25A transistor TRANSISTOR st25a 2SC182 ST25C 2N907A
Text: . SILICON NPN ■LOW POWER TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION LINE No. ¿J r TYPE No , 5.0 4.0 3.0 10 5.0p 8.0p ME GD R133 A 34 35 36 4C29 4C30 4C31 150m 150m 150m 12M 12M 12M 1,4m 1.4m 1 , I.Om I.Om 30 t 55 f 115 T 200nb 200nb 200nb 50 50 50 3.0 3.0 3.0 8.0p 8.0p 8.0p GD GD GD R133 R133 , 200nb 200nb 200nb 50 50 50 3.0 3.0 3.0 8.0p 8.0p 8.0p GD GD GD R133 R133 R133 A A A 40 41 42 D4C31 , GD PL ME R133 T05 A 0 43 44 45 NS621O0 ST1243 ST1244 150m 150m 150m 20MSA 20M 20M 1.1 m SA S S 30


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PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 st25a ST25C transistor 2N905 2N904 2N906 ST25A transistor TRANSISTOR st25a 2SC182 ST25C 2N907A
TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L OC1044 Transistor Vergleichsliste DDR AF124 bbc ds diodes
Text: o / M u lla r d V a lv o / M u lla r d V a lv o / M u lla r d V a lv o / M u lla r d S F 132 GD , G D 17 5 *) G D 1 1 0 *) G D 1 6 0 *) GD GD GF GF GF GF GF GF GF 1 7 5 *) 180*> 125 121 134 132 131 , 503 GT GT GT GT 309 309 309 309 G F 143 G F 142 G F 141 GF GF GF GF GD GD 129 130 131 132 24 2 *) 1 , betic o r d e r : Transistors Rectifier diodes Ze n e r power diodes C o m p a r i s o n in a c c o r d a n c e w it h the g r o u p s of t y p e s : AF-Ge-transistors AF-Ge-power transistors


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PDF 06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L OC1044 Transistor Vergleichsliste DDR AF124 bbc ds diodes
2008 - SIEMENS epcos

Abstract: epcos 500 05 BFR92 9151F r851
Text: connected to GND, the input port to the transistor´s base. The SAWR works in a 1-port configuration. The , Qloaded = GD 2 Fig. 3: Calculating the Qloaded and Qunloaded of a 1-port SAWR in 2 , : R851 in 2-port configuration: S21, ang[S21] and GD [S21] To make the whole picture we add S21, ang[S21] and GD [S21]. In the 2-port configuration of the 1-port SAWR, GD [S21] maximum is about 33kHz up , of a SAWR is more important. Fig. 7: R851 in 1-port configuration: Page 4 GD [S33] SAW


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Not Available

Abstract: No abstract text available
Text: semi-finished digital circuits that contain patterns of uncommitted transistors pre-fabricated on silicon base , . 1-micron Gate Arrays Array GD200K GD100K GD 70K GD 50K GD 35K GD 25K GD 20K GD 16K GD 12K GD 9K GD GD GD 7K 5K 3K Useable Gates Triple-metal Double-metal 150,000 100,000 50


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PDF 25-micron GD200K GD100K
Not Available

Abstract: No abstract text available
Text: the device. The output circuits feature two NC transistors . The device must be protected against , Application area acc. to ATEX: II (1) GD , II 3 GD Line monitored for wire-break/short-circuit PNP , V 2 x transistors (pnp, short-circuit proof) ð 30 VDC ð 50 mA ð 3000 Hz Galvanic , 553447 II (1) GD [Ex ia] IIC/IIB ð 9.6 V ð 10 mA ð 24 mW 250 V linear Ci = negligibly small , female M12 (intrinsically safe end) IIB 20 3400 TÜV 07 ATEX 554027 X II 3 GD Ex nA [nL] IIC


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PDF IMC-DI-22EX-PNC/24VDC IMC-DI-22EX-PNC/24VDC 2013-07-13T20 D-45472
Not Available

Abstract: No abstract text available
Text: the device. The output circuits feature two NO transistors . The device must be protected against , Application area acc. to ATEX: II (1) GD , II 3 GD Line monitored for wire-break/short-circuit PNP , V 2 x transistors (pnp, short-circuit proof) ð 30 VDC ð 50 mA ð 3000 Hz Galvanic , 553447 II (1) GD [Ex ia] IIC/IIB ð 9.6 V ð 10 mA ð 24 mW 250 V linear Ci = negligibly small , female M12 (intrinsically safe end) IIB 20 3400 TÜV 07 ATEX 554027 X II 3 GD Ex nA [nL] IIC


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PDF IMC-Di-22Ex-PNO/24VDC IMC-Di-22Ex-PNO/24VDC 2013-07-13T20 D-45472
Not Available

Abstract: No abstract text available
Text: CF003-03 models. They are 600 ¡im gate w idth transistors with sub half-micron gate length and C , 0.87 -62 -108 - 132 -155 -172 177 166 150 135 126 117 112 115 16.7 14.1 11.8 9.6 , 13.2 11.0 9.0 7.5 6.4 5.5 4.8 3.7 2.4 0.7 -0.2 7.93 5.95 4.55 3.54 2.80 2.38 2.08 1.89 1.74 1.53 1.32 1.08 0.98 139 109 91 74 61 49 38 26 12 -2 -13 -20 -24 -25.7 , -9 -11 -58 -103 -127 -151 -169 180 168 154 141 132 124 118 120 s 22 (Mag) (Ang


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PDF CF003 CF003-03 CF003 CF003-01 n745D3
2007 - TRANSISTORS 132 GD

Abstract: IRF1010 IRF737LC
Text: transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100 , C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 Coss 300 200 Crss 100 0 A 1 10 I , ) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84


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PDF IRF737LC 12-Mar-07 TRANSISTORS 132 GD IRF1010 IRF737LC
2007 - Not Available

Abstract: No abstract text available
Text: transistors for switching applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = , 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 600 500 Ciss 400 , ) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15


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PDF IRF737LC 08-Mar-07
Telefunken Electronic LED 3mm

Abstract: MG96
Text: . Definitions Vishay Telefunken offers a wide range of semiconductor components including transistors , diodes , YAG-Phosphor (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , (< 0.1%) Y 25% Gd 44.3% Al2, O3, 30.7 Traces of Ce Significant Materials for Disposal No , , GaAs, SiC Traces of Au, Zn, Ge, Ti Total weight (3mm) 132 mg Resistor chip (< 0.1%) 99


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MA520

Abstract: transistor 2sa124 2SA124 TRANSISTOR R44 t1826 usaf521es071m MM4647 2SA39 MAS22 2SA38
Text: . GERMANIUM PNP • LOW POWE R TRANSISTORS IN ORDER OF (1) MAX COLLECTOR DISSIPATION 3J il MAX. 21 [DERATE , 3.0 500u 10 b 90 4.Op T024 106 TI380 30m 30.M 16 5.0m 1Ou0 6.0 ,5Om0 20 1 GD R44 107 TI379 30m 35.M 16 5.0m 1Ou0 6.0 ,5Om0 33 § GD R44 108 TI381 30m 35.M 16 5.0m 1Ou0 6.0 ,5Om0 29 § GD R44 109 TI382 30m 35.M 20 5.0m 1Ou0 6.0 ,5Om0 25 § GD R44 110 TI383 30m 35.M 20 5.0m 10u0 6.0 ,5Om0 25 § GD R44 27 D.A. T. A. SYMBOLS AND CODES EXPLAINED


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PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 MA520 transistor 2sa124 2SA124 TRANSISTOR R44 t1826 usaf521es071m MM4647 2SA39 MAS22 2SA38
2007 - FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Text: N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar , power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S , Pulsed (Note 1) FDP33N25 33 20.4 132 FDPF33N25 250 33* 20.4* 132 * Unit V A A A V mJ A mJ V , 160 250 48 -33 132 1.4 -V V/°C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C On , effect transistors are e-mail this datasheet produced using Fairchild¡¯s proprietary, planar stripe, DMOS


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PDF FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor
1994 - IRF740

Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI s s s s V DSS R DS( on) ID 400 V 400 V < 0.55 < 0.55 10 A 5.5 A TYPICAL RDS(on) = 0.42 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC , circuit) 25 37 120 30 32 48 155 38 ns ns ns ns Qg Q gs Q gd Total Gate Charge , . MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051


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PDF IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI transistor equivalent irf740 irf740 DATA SHEET
1994 - IRF520

Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
Text: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS R DS( on) ID 100 V 100 V < 0.27 < 0.27 10 A 7A TYPICAL RDS(on) = 0.23 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT , 30 ns ns ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge , . TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D


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PDF IRF520 IRF520FI 100oC 175oC O-220 ISOWATT220 IRF520 transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
2009 - TPS65170

Abstract: No abstract text available
Text: pumps generating the display transistors ' on and off supplies VGH and VGL. By using external transistors , current VIN FBN, FBP, FBB, FB, DLY, CRST, SS, COMP, VL RST SWB, CTRLP, GD , SW, CTRLN GD Human Body Model , 34 °C/W TA 25°C POWER RATING 2.94 W TA = 70°C POWER RATING 1.62 W TA = 85°C POWER RATING 1.32 W , GD Copyright © 2009, Texas Instruments Incorporated TPS65170 www.ti.com SLVSA27 ­ OCTOBER 2009 PIN FUNCTIONS PIN NAME VL SWB CTRLN FBN FBB /RST AGND NC AGND DLY CRST SS COMP FB FBP CTRLP GD


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PDF TPS65170 SLVSA27 750kHz 28-Pin TPS65170
1994 - C5027

Abstract: C3519 IRFZ40 IRFZ40FI
Text: IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s VDSS R DS(on) ID 50 V 50 V < 0.028 < 0.028 50 A 27 A TYPICAL RDS(on) = 0.022 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT , Rise Time Turn-off Delay Time Fall Time Qg Q gs Q gd Total Gate Charge Gate-Source Charge , . A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72


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PDF IRFZ40 IRFZ40FI 100oC 175oC O-220 ISOWATT220 C5027 C3519 IRFZ40 IRFZ40FI
1996 - IRF620

Abstract: EQUIVALENT IRF620FI transistor irf620 IRF620FI
Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS s s s s R DS( on) ID 200 V 200 V TYPE IRF620 IRF620FI < 0.8 < 0.8 6A 4A TYPICAL RDS(on) = 0.55 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 , 45 100 190 65 ns ns ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge , 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72


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PDF IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620 EQUIVALENT IRF620FI transistor irf620 IRF620FI
1996 - IRF740

Abstract: IRF740FI
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE s s s s V DSS R DS( on) ID 400 V 400 V IRF740 IRF740FI < 0.55 < 0.55 10 A 5.5 A TYPICAL RDS(on) = 0.42 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT , circuit) 25 37 120 30 32 48 155 38 ns ns ns ns Qg Q gs Q gd Total Gate Charge , . A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40


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PDF IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI
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