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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UF3N170400B7S UF3N170400B7S ECAD Model UnitedSiC 1700V-400mΩ SiC JFET D2PAK-7L
UJ3N065080K3S UJ3N065080K3S ECAD Model UnitedSiC 650V-80mΩ SiC JFET TO-247-3L
UJ3N120065K3S UJ3N120065K3S ECAD Model UnitedSiC 1200V-66mΩ SiC JFET TO-247-3L
UJ3N120035K3S UJ3N120035K3S ECAD Model UnitedSiC 1200V-35mΩ SiC JFET TO-247-3L
UJ3N065025K3S UJ3N065025K3S ECAD Model UnitedSiC 650V-25mΩ SiC JFET TO-247-3L
UF3C065030K4S UF3C065030K4S ECAD Model UnitedSiC Power Field-Effect Transistor, 85A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247

TRANSISTOR junctions of bc188 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DCA50

Abstract: DCA50e germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
Text: diode junctions within the transistor are detected, the display will indicate the presence of both , or more pn junctions within the device under test. Please refer to the rest of this guide for more information. In particular, the section covering the analysis of diode junctions explains the displayed , The DCA50e will analyse all three test clips for the presence of diode junctions and will therefore , MOSFET as an N-Channel device. Page 5 bipolar transistors Analysis of many types of transistor is


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PDF DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E
2000 - External recirculating diodes

Abstract: TRANSISTOR T4 1r5gu byw22 T4 DIODE BYV 22 diode DIODE d3 DIODE T4 DIODE T5 diode
Text: junctions can become reverse biased. t4: The depletion layer acquires a substantial amount of space charge , External recirculating diodes Some of New JRC´s stepper motor drivers use external recirculating , transistor T4 is on and transistor T1 is off. The current forward biases the D3 diode. The result is slow , between near ground and VMM+Vd when transistor T1 is switching on/off during constant current chopping , very high demand for "fast recovery" of the upper recirculating diodes D3 and D4 when switching from


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PDF UF-4001 BYW-22 BYW-98 BYV-27 External recirculating diodes TRANSISTOR T4 1r5gu byw22 T4 DIODE BYV 22 diode DIODE d3 DIODE T4 DIODE T5 diode
function ic 4026

Abstract: ic 4026 alumel and chromel sensor Cold Junction Compensation 4026 IC cold junction chromel seebeck Table MAX6002 chromel alumel seebeck platinum Hot wire
Text: temperature difference between two junctions in the thermocouple is the result of the Seebeck effect , cold junctions . If you know both the temperature of the cold junction and the temperature of the hot , Cold-Junction Compensation in Thermocouple Applications Abstract: Thermocouples are one of the most widely used temperature-measurement devices because of their ruggedness, repeatability, and fast response time. This application note discusses the basic operation of a thermocouple, which includes the


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PDF com/an4026 MAX6002: MAX6610: MAX6627: MAX6675: MX7705: AN4026, APP4026, Appnote4026, function ic 4026 ic 4026 alumel and chromel sensor Cold Junction Compensation 4026 IC cold junction chromel seebeck Table MAX6002 chromel alumel seebeck platinum Hot wire
1998 - scr inverter schematic circuit

Abstract: SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor
Text: of the complementary bipolar transistor , creating a voltage sufficient to turn on the transistor . A , junctions . CAUSES OF LATCH-UP Latch-up may be initiated in numerous ways. Only the critical causes , junctions to break down, producing substrate current capable of triggering latch-up. Latch-up is one of the , . Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple


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PDF 14105C-001 scr inverter schematic circuit SCR Inverter datasheet General electric SCR Power INVERTER schematic circuit scr inverter schematic inverter SCR SCR PNPN four-layer diode scr power control schematic Bipolar Junction Transistor
2000 - SCR 2000

Abstract: SCR TRANSISTOR
Text: close to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor , the TISP8201M transistor base-emitter and the SCR gate-anode junctions . If sufficient current is , is marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR , current, IR, flowing into the K terminal will be the sum of the transistor IEB and the actual internal SCR , TISP8200M V(BO) applied and it is the sum of the transistor IEB and the actual internal SCR IR. VBATR is


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PDF TISP8200M, TISP8201M, TISP8200M 10/1000rmed, SCR 2000 SCR TRANSISTOR
1997 - SCR Inverter

Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
Text: bias condition of this junction allows collector current to flow in the bipolar transistor . This collector current flows across the base-emitter resistor of the complementary bipolar transistor , creating , integrated circuit by fusing metal lines or destroying junctions . CAUSES OF LATCH-UP Latch-up may be , Controlled Rectifier) circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These


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PDF 14105B-1 SCR Inverter SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
1998 - TISP8200M

Abstract: TISP8200MDR-S TISP8201M TISP8201MDR-S GR-1089-CORE PEB4264
Text: conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions . If sufficient , SLIC negative supply by emitter follower action of the NPN buffer transistor . If sufficient clipping , close to the SLIC positive supply by emitter follower action of the PNP buffer transistor . If sufficient , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK


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PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M NoSP8200M TISP8200MDR-S TISP8201M TISP8201MDR-S GR-1089-CORE PEB4264
1998 - transistor k44

Abstract: 79r251
Text: (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions . If , conduction of the TISP8201M transistor base-emitter and the SCR gate-anode junctions . If sufficient current , initially clipped close to the SLIC negative supply by emitter follower action of the NPN buffer transistor , clipped close to the SLIC positive supply by emitter follower action of the PNP buffer transistor . If , junctions are subject to voltage stress: Transistor EB and CB, SCR AK (reverse and off state). This clause


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PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M transistor k44 79r251
a hybrid wideband amplifier

Abstract: AN-6126 rf transistors amplifier design and matching network rca application note an-6126
Text: )'The higher the power rating of an RF transistor , the lower and'm ore com plex is the input impedance , reproducibility of the transistor increases non-llnearly with the power rating. Increased power handling , . Benjamin, "RF Power Combinations Using Hybrid Junctions , " and ' Broadband Transistor Power Amplifier , output power twice that of a single transistor . See pages 64, 69, 77 for additional information on , 90° Hybrids for Transistor Power Am plifiers Recent advances in RF power transistors have made


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PDF AN-6010, AN-6118, AN-6126; a hybrid wideband amplifier AN-6126 rf transistors amplifier design and matching network rca application note an-6126
ABSTRACT FOR flashing led light

Abstract: thermoelectric generator thermoelectric generator by using peltier Seebeck generator teg dc-dc voltage converter peltier generator peltier power generator TEG with boost converter Generator Seebeck peltier power generation
Text: view, TEGs can perform as TECs and vice-versa. Both consist of a large number of pn junctions , temperature difference applied to its ceramic sides, and the number of internal junctions in series. This , : Using a thermoelectric generator (TEG) to sense the temperature of a surface and a step-up switching , when the surface temperature exceeds a threshold. A similar version of this article appeared in the February 4, 2008 issue of Machine Design magazine. Because a hot-surface warning light affects personnel


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PDF MAX1676 com/an4535 AN4535, APP4535, Appnote4535, ABSTRACT FOR flashing led light thermoelectric generator thermoelectric generator by using peltier Seebeck generator teg dc-dc voltage converter peltier generator peltier power generator TEG with boost converter Generator Seebeck peltier power generation
2002 - transistor k44

Abstract: 6ntp2c DUAL COMMON ANODE-CATHODE 6ntp2 Summary application for common cathode diode pair infineon slic transistor K45 79R241 GR-1089-CORE k45 diode
Text: negative supply by emitter follower action of the TISP6NTP2C buffer transistor . If sufficient clipping , is marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR , testing to ensure the junctions are good. Testing transistor CB and EB: The maximum voltage stress level , induction. The TISP6NTP2C has an array of four buffered P-gate forward conducting thyristors with twin , reduce the gate supply current. In use, the cathodes of an TISP6NTP2C thyristors are connected to the


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2002 - antiparallel scr

Abstract: TISP6NTP2C DUAL COMMON ANODE-CATHODE
Text: clipped close to the SLIC negative supply by emitter follower action of the TISP6NTP2C buffer transistor , follower action of the TISP6NTP2C buffer transistor . If sufficient clipping current flows, the TISP6NTP2C , clause covers the necessary testing to ensure the junctions are good. Testing transistor CB and EB: The , , I GKS, is the sum of the junction currents I CB and IEB. Testing transistor CB, SCR AK off state and , ) is the internal SCR value of ID Figure 4. Transistor CB and EB Verification Figure 5. Off-State


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2002 - DUAL COMMON ANODE-CATHODE

Abstract: 5k2a transistor k44 TISP6NTP2C transistor K45
Text: SLIC negative supply by emitter follower action of the TISP6NTP2C buffer transistor . If sufficient , follower action of the TISP6NTP2C buffer transistor . If sufficient clipping current flows, the TISP6NTP2C , clause covers the necessary testing to ensure the junctions are good. Testing transistor CB and EB: The , , I GKS, is the sum of the junction currents I CB and IEB. Testing transistor CB, SCR AK off state and , ) is the internal SCR value of ID Figure 4. Transistor CB and EB Verification Figure 5. Off-State


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photo diode array

Abstract: photoreceptor photo transistor array
Text: light receptor or photo diode. Light falling on these regions is collected by the junctions of this , the photo generated charge into the collection junction, instead of into the unrelated junctions . We , present between the substrate and the junctions , this will prevent an easy collection of charges by the , n-junctions in the p-substrate. The junctions measure 3x3 µm, the pixel pitch is 7.5 µm. A central row of , transistor pixels as in ref. [1]. Adding a small dot of NWELL inside the photo diode increased the collected


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PDF Near-100 B-3001 photo diode array photoreceptor photo transistor array
Design and Fabrication of 5V Constant Voltage Power supply

Abstract: No abstract text available
Text: , not only is the pass transistor sourcing excessive cur rent, the voltage across it is maximal. (Since V0(JT is ground, the voltage across the transistor is VIN .) Linear regulators typically use one of two types of short circuit protection on chip: constant current limit or foldback current limit. In a , the output device, increases proportionately as lour /P- As IBincreases, the base voltage of transistor Q3 (VB E 3 =IB/R ) increases, turning on Q3. Q3's collector current is steered away from Q l


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LTS 7-segment display

Abstract: TRANSISTOR 237N DI207N Dionics DI 257 Dionics Dionics DI 297N 267N 287P DI257N seven transistors PNP drivers
Text: transistor will flow through each of seven paralleled emitter-base junctions when they are switched on. The , the series connected R1 and programming transistor . (See figure 1) Although the collector of this , emitter-base of the programming transistor . Since all devices have matched emitter-base characteristics and are , Hfe of the programming transistor . Because all devices are receiving identical base drives, they will , collector-emitter junction of the current regulating output transistor . Repeated momentary shorts at programmed


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PDF DI257N DI257P DI237N LTS 7-segment display TRANSISTOR 237N DI207N Dionics DI 257 Dionics Dionics DI 297N 267N 287P seven transistors PNP drivers
Dionics DI 297N

Abstract: No abstract text available
Text: programming transistor will flow through each of seven paralleled emitter-base junctions when they are , ) Although the collector of this transistor is tied to its own base, it is still very much in its active , characteristic of the device. Seven additional high voltage transistors have their emitter-base junctions in parallel with the emitter-base of the programming transistor . Since all devices have matched emitter-base , other and to the Hp[= of the programming transistor . Because all devices are receiving identical base


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PDF OI257P DI257N DI257P I237N DI237N Dionics DI 297N
2008 - system roadmap

Abstract: cdm 2020
Text: Event Lightly Doped Drains Reduce Hot Carrier Transistor Degradation Degraded Performance of Parasitic Bipolar Transistor which Provides Intrinsic High Current Capability Silicided Junctions , Carrying Capability of Parasitic Bipolar Transistor Thin Gate Oxides Improved Transistor Performance , last 40 years is most succinctly expressed by Moore's Law; "Every 2 years the number of transistors , success has been the shrinking of integrated circuit feature sizes in all three dimensions. To maintain


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PDF AND8309/D system roadmap cdm 2020
DI297N

Abstract: seven transistors PNP drivers
Text: series connected R1 and programming transistor . (See figure 1) Although the collector of this transistor , additional high voltage transistors have their emitter-base junctions in parallel with the emitter-base of , will flow through each of seven paralleled emitter-base junctions when they are switched on. The seven , output transistor . Repeated momentary shorts at programmed current levels of up to 1.0 milliamp may be , external switching transistor in series with the current programming leg at the juncture of R1 and the


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PDF DI257N DI257P DI237N DI297N seven transistors PNP drivers
1998 - GR-1089-CORE

Abstract: PEB4264 TISP8200M TISP8200MDR TISP8200MDR-S TISP8201M TISP8201MDR TISP8201MDR-S K45 S2
Text: conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions . If sufficient , SLIC negative supply by emitter follower action of the NPN buffer transistor . If sufficient clipping , close to the SLIC positive supply by emitter follower action of the PNP buffer transistor . If sufficient , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK


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PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M GR-1089-CORE PEB4264 TISP8200MDR TISP8200MDR-S TISP8201M TISP8201MDR TISP8201MDR-S K45 S2
2001 - SCR GATE DRIVER

Abstract: SCR Gate Drive SCR gate drive circuit PEB4264 SCR TRANSISTOR SCR FAST SWITCHING GR-1089-CORE TISP8200M TISP8200MDR TISP8201M
Text: supply by emitter follower action of the NPN buffer transistor . If sufficient clipping current flows the , positive supply by emitter follower action of the PNP buffer transistor . If sufficient clipping current , to the SLIC negative supply rail value (VBATH) by the conduction of the TISP8200M transistor , conduction of the TISP8201M transistor base-emitter and the SCR gate-anode PRODUCT 8 INFORMATION , junctions are subject to voltage stress: Transistor EB and CB, SCR AK (reverse and off state). This clause


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PDF TISP8200M, TISP8201M, TISP8200M SCR GATE DRIVER SCR Gate Drive SCR gate drive circuit PEB4264 SCR TRANSISTOR SCR FAST SWITCHING GR-1089-CORE TISP8200M TISP8200MDR TISP8201M
1998 - GR-1089-CORE

Abstract: PEB4264 TISP8200M TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor
Text: conduction of the TISP8201M transistor base-emitter and the SCR gate-anode junctions . If sufficient current , negative supply rail value (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR , junctions are subject to voltage stress: Transistor EB and CB, SCR AK (reverse and off state). This clause covers the necessary testing to ensure the junctions are good. Testing transistor EB and SCR AK reverse , terminal will be the sum of the transistor IEB and the actual internal SCR IR . The reverse voltage


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PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M GR-1089-CORE PEB4264 TISP8200MDR TISP8201M TISP8201MDR transistor k44 tip 416 transistor
1998 - DATA SHEET SCR TRANSISTOR

Abstract: PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR
Text: SLIC negative supply by emitter follower action of the NPN buffer transistor . If sufficient clipping , close to the SLIC positive supply by emitter follower action of the PNP buffer transistor . If sufficient , transistor base-emitter and the SCR gate-cathode junctions . If sufficient current is available from the , rail value (VBATR ) by the conduction of the TISP8201M transistor base-emitter and the SCR gate-anode , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK


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PDF TISP8200M, TISP8201M, TISP8200M TISP8201M TISP8200M DATA SHEET SCR TRANSISTOR PEB4264 k44 transistor SCR 213 specifications of scr GR-1089-CORE TISP8200MDR TISP8201M TISP8201MDR
2001 - battery charging circuit using scr

Abstract: SCR GATE DRIVER PEB4264 SCR Gate Drive GR-1089-CORE TISP8200M TISP8200MDR TISP8201M TISP8201MDR 8200M
Text: (VBATH) by the conduction of the TISP8200M transistor base-emitter and the SCR gate-cathode junctions , follower action of the NPN buffer transistor . If sufficient clipping current flows the SCR will regenerate , follower action of the PNP buffer transistor . If sufficient clipping current flows the SCR will regenerate , close to the SLIC positive supply rail value (VBATR) by the conduction of the TISP8201M transistor , marked as B (G). The following junctions are subject to voltage stress: Transistor EB and CB, SCR AK


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PDF TISP8200M, TISP8201M, TISP8200M GR-1089-CORE battery charging circuit using scr SCR GATE DRIVER PEB4264 SCR Gate Drive TISP8200M TISP8200MDR TISP8201M TISP8201MDR 8200M
2004 - vertical PNP

Abstract: GHz PNP transistor AN1107 NPN Two monolithic transistors pnp transistor 2000v
Text: done by using reverse biased PN junctions and the technology is referred to as junction isolation (J.I.). The degree of isolation is limited by collectorsubstrate leakage currents and voltage modulated , neighbors by a layer of glass. With the Elantec D.I. process, a layer of glass (SiO2) surrounds the , essentially ideal isolation. Dielectric Isolation (D.I.) is a way of building monolithic integrated , the figure. There are two collector, two base, and two emitter diffusions. Therefore, each transistor


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