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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR j412 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - TELEDYNE 412T

Abstract: No abstract text available
Text: 412DD DPDT relay with internal transistor driver and coil transient suppression diode 412T , internal silicon suppression diode and transistor driver. This hybrid package reduces required PC board , Voltage (Vdc) 0.3 min. 412T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , (8.51) DIA. MAX. 10 TRANSISTOR BASE CONNECTION FOR 412T ONLY .035 (.89) ± .010 (0.25) 9 , , ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420


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PDF 412DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TELEDYNE 412T
2003 - J412

Abstract: j114dd 432T-26 432D 432T 432T-5 Teledyne Relays 28vdc
Text: polarity reversal protection 432DD DPDT relay with internal transistor driver and coil transient , protection. The hybrid 432T relay has an internal silicon suppression diode and a transistor driver. This , ) 0.3 min. 432T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , (0.08) .335 (8.51) DIA. MAX. TRANSISTOR BASE CONNECTION FOR 432T ONLY .035 (.89) ±.010 , ER412, ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420


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PDF 432DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, J412 j114dd 432T-26 432D 432T 432T-5 Teledyne Relays 28vdc
2003 - TRANSISTOR j412

Abstract: J412 712D-5 5 pin 30 amp relay 712D-26 TELEDYNE RELAYS j412 712-12 dpdt relay ER412D J411
Text: relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION , and transistor driver. The integrated packaging of the relay with its associated semiconductor , ) (@25°C & lc = 100 A) (Vdc) 712TN Transistor Characteristics 2.0 max 60 min. 0.3 min 6.0 min 60 , ) TRANSISTOR BASE CONNECTION FOR 712TN ONLY WIRE LEAD: .75 (19.05) MIN. +.002 (.05) .017 (.43) ­.001 , ER412, ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420


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PDF 712TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TRANSISTOR j412 J412 712D-5 5 pin 30 amp relay 712D-26 TELEDYNE RELAYS j412 712-12 dpdt relay ER412D J411
2003 - TRANSISTOR j412

Abstract: J412 Teledyne 412D Teledyne Relays 412 ER134D M4 412T-5 j412d 412D-26 Teledyne Relays 28vdc 412D
Text: 412DD DPDT relay with internal transistor driver and coil transient suppression diode 412T , relay features an internal silicon suppression diode and transistor driver. This hybrid package , . 412T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min. Characteristics , TRANSISTOR BASE CONNECTION FOR 412T ONLY .035 (.89) ± .010 (0.25) 9 412 412DD 412D 412T , ] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412 , J412D, J412DD .100 [2.54


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PDF 412DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TRANSISTOR j412 J412 Teledyne 412D Teledyne Relays 412 ER134D M4 412T-5 j412d 412D-26 Teledyne Relays 28vdc 412D
2003 - J412

Abstract: TRANSISTOR j412 military relay rf311 411D Teledyne Relays 28vdc Teledyne Relays 411 RF300 1d teledyne J114D
Text: 411DD SPDT relay with internal transistor driver and coil transient suppression diode 411T , relay features an internal silicon suppression diode and transistor driver. This hybrid package , 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 411T Transistor Emitter-base breakdown Voltage , ] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412 , J412D, J412DD , , ER412, ER412D ER412DD, J412 , J412D, J412DD ER412T, J412T 712, 712D, 712TN ER431T, J431T, ER432


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PDF 411DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, J412 TRANSISTOR j412 military relay rf311 411D Teledyne Relays 28vdc Teledyne Relays 411 RF300 1d teledyne J114D
2003 - transistor 431t

Abstract: h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet 431 transistor 431D TRANSISTOR 431 y 431 transistor
Text: reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , relay features an internal silicon suppression diode and transistor driver. This hybrid package , ) 0.3 min. 431T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , ) .300 [7.62] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412 , ] SQ ER411T, J411T, ER412, ER412D ER412DD, J412 , J412D, J412DD ER412T, J412T 712, 712D, 712TN


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PDF 431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, transistor 431t h a 431 transistor 431T transistor w 431 J412 lm 431 DAtasheet 431 transistor 431D TRANSISTOR 431 y 431 transistor
2003 - 432T-5

Abstract: No abstract text available
Text: polarity reversal protection 432DD DPDT relay with internal transistor driver and coil transient , silicon suppression diode and a transistor driver. This hybrid package reduces required PC board floor , ) 0.3 min. 432T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , . TRANSISTOR BASE CONNECTION FOR 432T ONLY .035 (.89) ±.010 (0.25) 432 8 +.002 (.05) .017 (.43 , , ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420


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PDF 432DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, 432T-5
2003 - J412

Abstract: TRANSISTOR j412 J114 rf311 453124 ER412D dpdt relay 732D TELEDYNE RELAYS j134
Text: 732TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL , and transistor driver. The integrated packaging of the relay with its associated semiconductor , ) (@25°C & lc = 100 A) (Vdc) 732TN Transistor Characteristics 2.0 max 60 min. 0.3 min 6.0 min 60 , : .75 (19.05) MIN. (.05) .017 (.43) +.002 (.03) DIA. ­.001 732 TRANSISTOR BASE CONNECTION , ) .300 [7.62] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412


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PDF 732TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, J412 TRANSISTOR j412 J114 rf311 453124 ER412D dpdt relay 732D TELEDYNE RELAYS j134
2009 - TRANSISTOR j412

Abstract: No abstract text available
Text: relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION , internal silicon diode and transistor driver. The integrated packaging of the relay with its associated , ) (Vdc) Collector-base breakdown Voltage (BVCBO) (@25°C & lc = 100 µA) (Vdc) 712TN Transistor , ) DIA. MAX. .035 (.89) ± .010 (0.25) TRANSISTOR BASE CONNECTION FOR 712TN ONLY WIRE LEAD , , ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420


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PDF 712TN ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, TRANSISTOR j412
2003 - 411D-5

Abstract: No abstract text available
Text: 411DD SPDT relay with internal transistor driver and coil transient suppression diode 411T , diode and transistor driver. This hybrid package reduces required PC board floor space by reducing the , 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 411T Transistor Emitter-base breakdown Voltage , , ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420 , € Pad 5/ 6/ .390 [9.91] SQ ER411T, J411T, ER412, ER412D ER412DD, J412 , J412D, J412DD ER412T


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PDF 411DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, 411D-5
2003 - h a 431 transistor

Abstract: transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
Text: reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , transistor driver. This hybrid package reduces required PC board floor space by reducing the number of , Voltage (Vdc) 0.3 min. 431T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , , ER412D, ER412DD J412 , J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420 , € Pad 5/ 6/ .390 [9.91] SQ ER411T, J411T, ER412, ER412D ER412DD, J412 , J412D, J412DD ER412T


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PDF 431DD ER116C ER136C RF180, ER116C, ER136C RF100, RF103, ER114, ER134, h a 431 transistor transistor 431t transistor w 431 431T 431T1 a/TRANSISTOR+431t
2014 - 2395 transistor

Abstract: No abstract text available
Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , . 2 of 17 BLF8G24LS-100(G)V NXP Semiconductors Power LDMOS transistor 5. Thermal , NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance


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PDF BLF8G24LS-100V; BLF8G24LS-100GV BLF8G24LS-100V 24LS-100GV 2395 transistor
J406

Abstract: TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
Text: URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 TM UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. · Industry standard package. · Low , Source Z Load .85 - j2.34 .82 - j2.45 .80 - j2.55 .79 - j4.06 .85 - j4.10 .91 - j4.12


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PDF 2025B UPB2025B 30dBc 250mA 100oC 175oC J406 TRANSISTOR J406 TRANSISTOR j412 ultrarf UPB2025B J245
2003 - teledyne relay 412 screening

Abstract: Teledyne 412D TRANSISTOR j412 ER114D 412DD j114dd teledyne zener diode 1282 412D J412 412T-12
Text: DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL , transistor driver. This hybrid package reduces required PC board floor space by reducing the number of , , 412T 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 412T Transistor Emitter-base breakdown Voltage , from Terminals) .031 (.79) ± .003 (0.08) TRANSISTOR BASE CONNECTION FOR 412T ONLY 8 10 9 1 2 3 , ER412DD, J412 , J412D, J412DD ER412T, J412T 712, 712D, 712TN ER431T, J431T, ER432, ER432D ER432DD, J432


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PDF 412DD Sn60/Pb40) teledyne relay 412 screening Teledyne 412D TRANSISTOR j412 ER114D j114dd teledyne zener diode 1282 412D J412 412T-12
2004 - TRANSISTOR j412

Abstract: J412 2SJ412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution , µC Marking J412 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free


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PDF 2SJ412 TRANSISTOR j412 J412 2SJ412
2006 - TRANSISTOR j412

Abstract: No abstract text available
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current , : Repetitive rating: pulse width limited by maximum junction temperature This transistor is an , J412 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb


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PDF 2SJ412 2-10S1B TRANSISTOR j412
TRANSISTOR j412

Abstract: 2SJ412 J412
Text: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution , dIDR/dt = 50 A/s 0.5 C Marking J412 Part No. (or abbreviation code) Lot No. A


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PDF 2SJ412 TRANSISTOR j412 2SJ412 J412
2014 - Teledyne J411-9WP

Abstract: GRF331
Text: J412 TO-5 Relays, Non-Latching DPDT 29 J432 TO-5 Relays, Non-Latching Sensitive DPDT 29 , internal silicon diode and transistor driver. The integrated packaging of the relay with its associated , 50 mV 18 712D 220 12 880 13.0 0.68 26 TN = Internal transistor driver , and transistor driver. The integrated packaging of the relay with its associated semiconductor , /28Vdc TN = Internal transistor driver 732 6 200 4.5 1.00 Inductive: 200mA/28Vdc


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PDF TR0114 Teledyne J411-9WP GRF331
2009 - TRANSISTOR j412

Abstract: J412 2SJ412
Text: 2SJ412 Silicon P Channel MOS Type (L2-MOSV) TOSHIBA Field Effect Transistor 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm · 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 , C Marking J412 Note 4: A line under a Lot No. identifies the indication of product Labels


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PDF 2SJ412 TRANSISTOR j412 J412 2SJ412
2010 - Not Available

Abstract: No abstract text available
Text: PD84008L-E LDMOS transistor . It is designed for 2-way UHF portable radio applications. Table 1 , .81 930 1.43 - j4.12 2.12 - j7.77 940 1.36 - j4.04 1.77 - j7.67 950 4/11 ZGS


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PDF STEVAL-TDR021V1 PD84008L-E STEVAL-TDR021V1
2010 - 84008L

Abstract: J609 j748 J555 PD84008L J604 J6-48 GRM39X7R103 PD84008L-E J765
Text: LDMOS transistor . It is designed for 2-way UHF portable radio applications. Table 1. Device , 1.48 - j4.18 2.48 - j7.81 930 1.43 - j4.12 2.12 - j7.77 940 1.36 - j4.04 1.77 - j7


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PDF STEVAL-TDR021V1 PD84008L-E STEVAL-TDR021V1 84008L J609 j748 J555 PD84008L J604 J6-48 GRM39X7R103 J765
2007 - SMD code j620

Abstract: PD84008L DB-84008L-950 EEVHB1V100P EXCELDRC35C PD84008L-E j-513 grm39 j598
Text: evaluation board using PD84008L-E LDMOS transistor and designed for 2 Ways 900 MHz portable radio. Table , 1.43 - j4.12 2.12 - j7.77 940 1.36 - j4.04 1.77 - j7.67 950 4/15 ZGS 1.33 - j3


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PDF DB-84008L-950 PD84008L-E DB-84008L-950 PD84008L-E SMD code j620 PD84008L EEVHB1V100P EXCELDRC35C j-513 grm39 j598
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , -25 WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6 , + j29.87 14.16 + j28.69 14.56 + j30.52 17.49 + j30.11 15.50 + j29.36 ZL 13.46 + j3.58 13.56 + j4.12


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
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