The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5521EUF#PBF Linear Technology LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5521EUF#TRPBF Linear Technology LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5521EUF#TR Linear Technology LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5521EUF Linear Technology LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LTC3552EDHC-1#PBF Linear Technology LTC3552-1 - Standalone Linear Li-Ion Battery Charger and Dual Synchronous Buck Converter; Package: DFN; Pins: 16; Temperature Range: -40°C to 85°C
LTC3552EDHC-1#TRPBF Linear Technology LTC3552-1 - Standalone Linear Li-Ion Battery Charger and Dual Synchronous Buck Converter; Package: DFN; Pins: 16; Temperature Range: -40°C to 85°C

TRANSISTOR c 5521 Datasheets Context Search

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TRANSISTOR c 5521

Abstract: c 5521 dupline 8 channel receiver 15 A PNP POWER TRANSISTOR transistor 24 5521 transistor 115 G3430 Transistor AC 51
Text: 5521 . 8 channels Open collector PNP transistor ouput Ch. 5, 6, 7, 8 Ch. 5, 6, 7, 8 VBB , Dupline® Field- and Installationbus Receiver for Digital Signals Types G 3430 5511, G 3430 5521 · 8-channel receiver · Optoisolated NPN (sink) or PNP (source) transistor outputs · Load: 8 x 0.7 , Receiver No. of channels Output type Power supply transistor outputs for control of loads up to 60 VDC/0.7 A. G 3430 5521 024 Type Selection Supply Ordering no. 8 channels 0.7 A/60 VDC NPN


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Dupline

Abstract: No abstract text available
Text: NPN or PNP transistor outputs for control of loads up to 60 VDC/0.7 A. G 3430 5521 024 Type , transistor 24 VAC 115 VAC 230 VAC G 3430 5511 024 G 3430 5511 115 G 3430 5511 230 G 3430 5521 , transistor output G 3430 5521 . 8 channels Open collector PNP transistor ouput Ch. 5, 6, 7, 8 VBB , Du line Receiver for Digital Signals Types G 3430 5511, G 3430 5521 ® Fieldbus Installationbus • 8-channel receiver • Optoisolated NPN (sink) or PNP (source) transistor outputs â


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2011 - Not Available

Abstract: No abstract text available
Text: transistor (TFT) liquid-crystal displays (LCDs). ORDER NUMBER G5521AR51U 5521 -40° C to 85° C , VGH charge pump controller for activematrix thin-film transistor (TFT) liquid-crystal displays (LCDs). ORDER NUMBER G5521R51U 5521 -40° C to 85° C TQFN4X4-24 FB COMP OPAI OPAO


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PDF G5521 640kHz 350mA TQFN4X4-24 G5521A
2007 - G5521

Abstract: G5521R51U G-552
Text: activematrix thin-film transistor (TFT) liquid-crystal displays (LCDs). The boost converter provides the , (600KHz or 1.2MHz) currentPGND FREQ Ordering Information ORDER NUMBER G5521R51U MARKING 5521 TEMP. RANGE -40° C to 85° C PACKAGE (Pb free) TQFN4X4-24 Note: R5: TQFN4X4-24 1: Bonding Code U


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PDF G5521 600KHz/1 150mA 12MHz, 350mA 600KHz G5521R51U TQFN4X4-24 TQFN4X4-24 G5521 G5521R51U G-552
1997 - TRANSISTOR c 5521

Abstract: ic cmos 5011 lm386 transistor duck sound pin diagram of LM386 dac 3440 song ic duck sounds note piano
Text: /E Transistor output stage (for 4.5V VDD) · Chip form 6 27th June '96 HT3108A/ C /D/E · Package form 7 27th June '96 HT3108A/ C /D/E Transistor output stage · Chip form 8 27th , HT3108A/ C /D/E 8 Key Voice Piano Features · · · · · · · Operating voltage: 2.4V~5.0V , General Description The HT3108A/ C /D/E are voice keyboard instrument LSIs implemented in the CMOS , song of the HT3108A/ C /D/E is triggered by pressing the demo key and will keep playing until one of


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PDF HT3108A/C/D/E HT3108A/C/D/E LM386 TRANSISTOR c 5521 ic cmos 5011 lm386 transistor duck sound pin diagram of LM386 dac 3440 song ic duck sounds note piano
Not Available

Abstract: No abstract text available
Text: /Dec.’02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , r a d i o s e ts ABSjjLUTE MAXIMUM RATINGS (Tc=4llfg. C UNLESS OTHE SYMBOL VDSS VGSS Pin Pch , Channel dissipation Tc=25deg. C Junction Temperature Storage temperature RATINGS 30 +/-20 100 5 , ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25deg. C , UNLESS OTHERWISE NOTED) CONDITIONS MIN


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 520MHz)
c380 NPN transistor

Abstract: c380 transistor DATASHEET OF BJT 547 transistor c380 BTC5096WC3 diode gp 934 4538 equivalent Transistor 0235 BF K 4014 transistor BF859 equivalent
Text: Issued Date : 2003.08.15 Revised Date : Page No. : 5/8 LC C Lb Transistor S Chip B C1 E L2 , . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5096WC3 Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , · Maximum Ratings (Ta=25° C ) Parameters Collector-Emitter Breakdown Voltage Collector-Base , 125 -50~125 *1 Unit V V V mA mW ° C ° C Note: *1 Here we define the point DC current


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PDF C212WC3 BTC5096WC3 BTC5096WC3 OT-523 UL94V-0 c380 NPN transistor c380 transistor DATASHEET OF BJT 547 transistor c380 diode gp 934 4538 equivalent Transistor 0235 BF K 4014 transistor BF859 equivalent
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA1114A 55GN01MA RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP , =1GHz) Specifications Absolute Maximum Ratings at Ta=25° C Parameter Collector-to-Base Voltage Collector-to-Emitter , Ratings 20 10 3 70 400 150 -55 to +150 Unit V V V mA mW ° C ° C Stresses exceeding Maximum Ratings may , Characteristics at Ta=25° C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain , - ° C IT06251 No. A1114-3/8 55GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO


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PDF ENA1114A 55GN01MA S21e2 250mm2 A1114-8/8
2006 - TRIAC mw 134 600E

Abstract: OM1654 BT137 application example mw 134 600e TRANSISTOR c 5521 diagram circuit toaster BT134-600E TRANSISTOR bt134 BT137 application note bt134 phase control
Text: BLOCK DIAGRAM Neutral GATE 2 Triac BT134-600E Vcc 3 Rb NTC 100k @25° C zero , R=100k 1.6 0° C 25° C 100° C The RC oscillator can be disabled by connecting the RC pin to , 100 1000 Capacitance, C3 (nF) 5521 -RCfac Product Specification IES5521A Simple , -1.38 × R × C ( Hz ) The tolerance of the RC components determines the accuracy of the time-out , +125 ° C Tamb operating ambient temperature -25 +100 ° C 2006 Sep 01, Revision 1.1


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PDF IES5521A IES5521A OM1654A, TRIAC mw 134 600E OM1654 BT137 application example mw 134 600e TRANSISTOR c 5521 diagram circuit toaster BT134-600E TRANSISTOR bt134 BT137 application note bt134 phase control
2006 - circuit diagram heating triac

Abstract: BT134/triac applications circuit diagram
Text: -600E Vcc 3 Rb NTC 100k @25° C zero crossing 8 AC θ 330k Rc 0.25W 7 PWR latch , parallel resistor and capacitor network between the RC pin and VEE (figure 6). RC Factor 0° C Error Bars R=100kΩ 1.6 25° C 100° C The RC oscillator can be disabled by connecting the , 0.1 1.0 10 100 1000 Capacitance, C3 (nF) 5521 -RCfac Product Specification , ‰ˆ -1.38 × R × C ( Hz ) The tolerance of the RC components determines the accuracy of the


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PDF IES5521A IES5521A OM1654A, circuit diagram heating triac BT134/triac applications circuit diagram
2006 - c380 NPN transistor

Abstract: c380 transistor TRANSISTOR c 5521 transistor c380 c 4977 transistor transistor m 4995 diode product 14408 70E-09 NPN C380 gummel
Text: =0.5 (nH) L3=0.6 (nH) Package Equivalent Circuit Transistor Chip Equivalent Circuit C3 C ' B , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , : 2002.05.08 Revised Date :2006.03.14 Page No. : 2/8 Absolute Maximun Ratings · Maximum Ratings (Ta=25° C , V V mA mW ° C ° C Note: *1 Here we define the point DC current gain drops off. Electrical


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PDF C212N3 BTC5094N3 BTC5094N3 OT-23 UL94V-0 c380 NPN transistor c380 transistor TRANSISTOR c 5521 transistor c380 c 4977 transistor transistor m 4995 diode product 14408 70E-09 NPN C380 gummel
2003 - c380 NPN transistor

Abstract: c380 transistor TR10E transistor c380 NPN C380 TT 2076 transistor transistor T C380 c380 npn c 4977 transistor diode gp 934
Text: RSX Base LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le L3 Emitter , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , buffer amplifiers Electrical Characteristics · Maximum Ratings (Ta=25° C ) Parameters Symbol , V V V mA mW ° C ° C * Note: Here we define the point where the DC current gain drops off


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PDF HN200103 HSC5094 HSC5094 OT-23 c380 NPN transistor c380 transistor TR10E transistor c380 NPN C380 TT 2076 transistor transistor T C380 c380 npn c 4977 transistor diode gp 934
2002 - c380 NPN transistor

Abstract: c380 npn 4.7-16 TR10E rbm 5018 HSC5094 FC 0137 c380 transistor 4447 surface mounted diode transistor marking code ne SOT-23
Text: 0.1nH LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter , . : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. SOT , Oscillator buffer amplifiers Electrical Characteristics · Maximum Ratings (Ta=25° C ) Parameters , Unit V V V mA mW ° C ° C * Note: Here we define the point where the DC current gain drops off


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PDF HN200103 HSC5094 HSC5094 OT-23 c380 NPN transistor c380 npn 4.7-16 TR10E rbm 5018 FC 0137 c380 transistor 4447 surface mounted diode transistor marking code ne SOT-23
2002 - c380 NPN transistor

Abstract: c380 transistor TT 2076 transistor ff 0401 transistor transistor marking code ne SOT-23 transistor c380 sot23 marking g50 diode gp 934 IN tt 2076 BTC5094N3
Text: ) Lc=0 (nH) Transistor Chip Equivalent Circuit C3 B RBX Rsp C L1 G-P S' CSP , /8 LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter , Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band , · Maximum Ratings (Ta=25° C ) Parameters Collector-Emitter Breakdown Voltage Collector-Base


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PDF C212N3 BTC5094N3 BTC5094N3 OT-23 UL94V-0 c380 NPN transistor c380 transistor TT 2076 transistor ff 0401 transistor transistor marking code ne SOT-23 transistor c380 sot23 marking g50 diode gp 934 IN tt 2076
c380 NPN transistor

Abstract: TT 2076 4014 bp TT 2076 transistor transistor c380 c380 transistor DATASHEET OF BJT 547 RE101 4447 surface mounted diode 1011 sot323 marking
Text: Issued Date : 2003.08.15 Revised Date : Page No. : 5/8 LC C Lb Transistor S Chip B C1 E L2 , . : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol , · Maximum Ratings (Ta=25° C ) Parameters Collector-Emitter Breakdown Voltage Collector-Base , 125 -50~125 *1 Unit V V V mA mW ° C ° C Note: *1 Here we define the point DC current


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PDF C212S3 BTC5095S3 BTC5095S3 OT-323 UL94V-0 c380 NPN transistor TT 2076 4014 bp TT 2076 transistor transistor c380 c380 transistor DATASHEET OF BJT 547 RE101 4447 surface mounted diode 1011 sot323 marking
2008 - ic 4518 applications

Abstract: 55GN01M transistor 7089 TRANSISTOR 6019 ic 8705 am
Text: 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF , : Base 2 : Emitter 3 : Collector Specifications SANYO : MCP Absolute Maximum Ratings at Ta=25° C , Collector Dissipation IC PC 400 mW Junction Temperature Tj 150 ° C Storage Temperature Tstg -55 to +150 ° C Collector Current Mounted on a ceramic board (250mm20.8mm) Electrical Characteristics at Ta=25° C Parameter Symbol Conditions Collector Cutoff Current ICBO


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PDF ENN7541 55GN01M S21e2 2059B 55GN01M] ic 4518 applications 55GN01M transistor 7089 TRANSISTOR 6019 ic 8705 am
2004 - ic 4518 applications

Abstract: 55GN01M ta 8227 CIRCUIT transistor mcp 6723 Sanyo 6324 IC 5276 8723 transistor
Text: 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF , : Base 2 : Emitter 3 : Collector Specifications SANYO : MCP Absolute Maximum Ratings at Ta=25° C , 400 Mounted on a ceramic board (250mm2!0.8mm) mW 150 ° C -55 to +150 ° C Electrical Characteristics at Ta=25° C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter , 8m m ) 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - ° C


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PDF ENN7541 55GN01M S21e2 2059B 55GN01M] ic 4518 applications 55GN01M ta 8227 CIRCUIT transistor mcp 6723 Sanyo 6324 IC 5276 8723 transistor
Microrobotics Scorpion K4

Abstract: Microrobotics Scorpion K4 controller Microrobotics Microrobotics K4 TRANSISTOR c 5521 Microrobotics K4s LTC1290 HD63140 100KA Scorpion
Text: microrobotics 6 ft- &2-S/S35 Scorpion K4S Controller 5520 and 5521 Introduction The , program. Quickly understood by anyone familiar with BASIC, Pascal or C , the K4 language offers a powerful , interface. The K4S comes with either 32K (the 5520) or 128K (the 5521 ) of RAM on board and has language , bus (pronounced 'I Squared C ') is a two-wire network which can control many devices. On the K4S, the , transistor bases directly. Pinout _ <\l CO LK2 1 Vcc 1 • • Vcc 2 Ground • • Ground Channel 16 â


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PDF 2-S/S35 VT100 V950223 Microrobotics Scorpion K4 Microrobotics Scorpion K4 controller Microrobotics Microrobotics K4 TRANSISTOR c 5521 Microrobotics K4s LTC1290 HD63140 100KA Scorpion
HA 12045

Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
Text: PRELIMINARY DATA SHEET NEC FEATURES NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF , package. ELECTRICAL CHARACTERISTICS (t a = 25° c ) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO lEBO hFE , mA Gain Bandwidth at V c e = 3 V , Ic = 10 mA, f = 2 GHz Feedback Capacitance2 at V cb = 3 V , I e = 0, f = 1 MHz Insertion Power Gain at V c e = 3 V , Ic = 10 mA, f = 2 GHz Noise Figure at V c e = 3 V , Ic = 3 mA, t = 2 GHz hFE Ratio, V c e = 3 V , lo = 10 mA MIN TYP MAX 0.1 0.1 HA 75 GHz


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PDF UPA826TF NE685 UPA826TF UPA826TF-T1 HA 12045 IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
j 6815 transistor

Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 8948 MOSFET 9935 9701 mosfet
Text: /Feb.'02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAW ING 4.6MAX 1.6 ± 0.2 DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically , : Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz © \ A P P U C A T I O N a, ^ ^ E§r output siage of High , . C U N LESS O TH ERW ISE N O TED) s i g i a t a 'l-;.'.-:.-;:P ARAMETER VDSS VGSS Pch Tj Tstg , temperature Ta=25deg. C 30 +/-20 0.8 150 -40 to +110 .iiMÉSr V V w deg.C deg.C Note 1: Above


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PDF RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 8948 MOSFET 9935 9701 mosfet
transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet 5763 transistor
Text: Power Transistor ,520MHz 30W O U T L IN E D R A W IN G DESCRIPTION RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. FEATURES · High power gain , high power amplifiers in UHF band mobile radio sets. PIN ABSOLUTE MAXIMUM RATINGS (Tc=25deg. C UNLESS , 7.5 175 -40 to +125 ©DRAIN ©SOURCE ©GATE Tc=25deg. C Zg=Zl=50Q UNIT V V W W deg.C deg.C , gss V th (Tc=25deg. C , UNLESS OTHERWISE NOTED) CONDITIONS MIN 1.3 30 50 LIMITS TYP 1.8 35 55 No


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PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet 5763 transistor
Not Available

Abstract: No abstract text available
Text: date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF , RATINGS (Tc=25deg. C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS VDSS Drain to source voltage VGSS Gate to source voltage Pch Channel dissipation Ta=25deg. C Junction Temperature Tj Tstg , =0.6mm Epoxy glass) ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25deg. C , UNLESS OTHERWISE NOTED


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PDF RD00HVS1 175MHz RD00HVS1 175MHz 25deg
2008 - 55GN01MA

Abstract: ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
Text: Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features · · , Absolute Maximum Ratings at Ta=25° C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , Temperature When mounted on ceramic substrate (250mm20.8mm) PC Tj 400 Tstg mW 150 ° C -55 to +150 ° C Electrical Characteristics at Ta=25° C Parameter Collector Cutoff Current , 120 Ambient Temperature, Ta - ° C 140 160 IT06251 No. A1114-3/6 55GN01MA S


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PDF 55GN01MA ENA1114 S21e2 250mm20 A1114-6/6 55GN01MA ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
2012 - TLE 4984

Abstract: transistor mcp 6723
Text: · · NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications , Maximum Ratings at Ta=25° C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , 3 70 400 150 -55 to +150 Unit V V V mA mW ° C ° C Package Dimensions unit : mm (typ) 7023A-009 , /network 71112 TKIM/O2908AB MSIM TC-00001677 No. A1114-1/8 55GN01MA Electrical Characteristics at Ta=25° C , - ° C IT06251 No. A1114-3/8 55GN01MA S Parameters (Common emitter) VCE=5V, IC=5mA, ZO


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PDF ENA1114A 55GN01MA S21e2 250mm2 023A-009 A1114-8/8 TLE 4984 transistor mcp 6723
Not Available

Abstract: No abstract text available
Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • â , Absolute Maximum Ratings at Ta=25° C Parameter Symbol Collector-to-Base Voltage Conditions , Characteristics at Ta=25° C Parameter Symbol Collector Cutoff Current ICBO IEBO Gain-Bandwidth , 67.90 61.28 55.21 49.25 43.74 38.40 33.44 28.88 24.76 21.16 17.89 ⏐S12⏐ 0.033 0.046


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PDF 55GN01MA ENA1114A 250mm2Ã A1114-8/8
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