The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

TRANSISTOR T-03 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
a1870

Abstract: a1873 A2762 A1873-002 A0881-L55 A1887 RANSISTOR HOA0880-P51 274 transistor A1873-013
Text: ) Slot W idth (in.) M in. (m A) Transistor 0.3 1.8 4.0 P age No. (in.) H O A 1872-011 H , 1874-013 Transistor T ransistor D arlington 0.3 1.8 4.0 20 .120 294 V " H O A 1879-011 , ransistor .050 dia. Transistor Darlington 0.3 1.8 4.0 20 .120 294 H O A 1874-003 - V -' H O A , A1881-O 11 HOA1881-O12 HOA1881-O13 .060 dia. Transistor T ransistor Darlington 0.3 1.8 4.0 20 , .010 T ransistor Transistor D arlington 0.3 1.8 4.0 20 .125 338 HOAO 88 X series em


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PDF A0825-001 A0825-002* A0825-003* A0825-004* 0-L51 0-L55 1-L55 2-L55 5-L51 5-L55 a1870 a1873 A2762 A1873-002 A0881-L55 A1887 RANSISTOR HOA0880-P51 274 transistor A1873-013
2008 - AN47

Abstract: Si321x Si3201 ProSLIC i321
Text: thermal resistance of the transistor package. Rev. 0.3 4/08 The thermal resistance (RTHJA) of the , the transistor package. Rev. 0.3 AN47 ( t ) = DC ( 1 ­ e ­t / allowing the setting of , temperature of the transistor die. The maximum admissible junction temperature must not be exceeded because this could damage or destroy the transistor die. In the Si321x, the measured power consumed in each , registers. If the power in any external transistor exceeds the programmed threshold (after passing through


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2007 - PG-DSO-20-37

Abstract: PG-TO263-7-1 DSD- 230 5205-2S INFINEON PART MARKING TLE 5205-2S INFINEON transistor PART MARKING PG-TO220-7-12 Pg-To-263-7 5205-2G
Text: Transistor 0.3 V S = 18 V 4 0.2 3 VS =6V 2 1 -50 0 50 100 High Side , Transistor Single Outline Package) 10 ±0.2 A 9.9 ±0.2 1.27 ±0.1 C 3.7 ± 0.3 10.2 ± 0.3 8.6 , loads, are limited by integrated freewheeling diodes. A monitoring circuit for each output transistor , transistor (sink transistor ) from conducting in sink operation (source operation). Therefore no crossover , detection Notes for Output Stage Symbol Value L Low side transistor is turned-ON High side


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PDF PG-TO220-7-11 5205-2GP PG-DSO-20-37quirements, PG-DSO-20-37 PG-TO263-7-1 DSD- 230 5205-2S INFINEON PART MARKING TLE 5205-2S INFINEON transistor PART MARKING PG-TO220-7-12 Pg-To-263-7 5205-2G
2003 - PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: rectifier 933076440163 N M 1 31-dec- 03 31-dec- 03 1N5059 Non-manufacturable. Consult , transistor 934021580699 T C 3 30-sep-04 31-dec-04 2N3906 Standard Discontinuation. See Replacement. Inactive part 7 2PA1576R PNP general purpose transistor 934031790185 N M 3 , 2PB709AR PNP general purpose transistor 934026650185 N M 3 30-jun-04 31 , transistor 934026650195 N M 3 30-jun-04 31-dec-04 2PB709AR Standard Discontinuation. See


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PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
2007 - PG-DSO-20-37

Abstract: 5206-2G PG-TO263-7-1 infineon 5206-2gp TO220-7 package AEP01680 AEP01990 AEP01991 INFINEON transistor PART MARKING 5206-2
Text: 5 0.4 Low Side Transistor 0.3 V S = 18 V 4 0.2 3 VS =6V 2 1 -50 0 , High Side Transistor 6 0.3 4 0.2 2 0.1 0 -50 0 50 100 0 -50 C 150 , loads, are limited by integrated freewheeling diodes. A monitoring circuit for each output transistor , transistor (sink transistor ) from conducting in sink operation (source operation). Therefore no crossover , high side transistors turned-ON Notes for Output Stage Symbol Value L Low side transistor


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PDF PG-TO220-7-11 5206-2GP PG-DSO-20-37 5206-2Gquirements, PG-DSO-20-37 5206-2G PG-TO263-7-1 infineon 5206-2gp TO220-7 package AEP01680 AEP01990 AEP01991 INFINEON transistor PART MARKING 5206-2
2001 - S-816

Abstract: SEIKO ic L 816a y 1661m diode 816 816a4
Text: Rev.4.1 External Transistor Type Voltage Regulators S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS , with the PNP transistor driven by this IC. Despite the features of the S-816, which is low current , VSS Note: To ensure you power cutoff of the external transistor when the device is powered down , Transistor Type Voltage Regulators S-816 Series Rev.4.1 Selection Guide 1. Product Name S - 816A


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PDF S-816 S-816, SEIKO ic L 816a y 1661m diode 816 816a4
1999 - diode LN 4001

Abstract: diode 816
Text: Transistor Type Voltage Regulators S-816 Series The S-816 Series consists of external transistor type , current ranging from several hundreds of mA to 1A can be configured with the PNP transistor driven by this , of the external transistor when the device is powered down, the EXT output is pulled up to VIN by a , . Block Diagram Seiko Instruments Inc. 1 External Transistor Type Voltage Regulators S , Figure 2 2 Seiko Instruments Inc. Rev.4.0 External Transistor Type Voltage Regulators S


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1999 - ic L 816a y

Abstract: diode 816
Text: Rev.4.0 External Transistor Type Voltage Regulators S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS , with the PNP transistor driven by this IC. Despite the features of the S-816, which is low current , : To ensure you power cutoff of the external transistor when the device is powered down, the EXT output , a parasitic diode. Figure 1. Block Diagram Seiko Instruments Inc. 1 External Transistor


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PDF S-816 S-816, ic L 816a y diode 816
SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Text: small, thin surface-mount package. These types of transistor are suitable for low-output AC adapters , to meet manufacturers’ needs. 2 Bipolar Power Transistor CONTENTS Selection Guide by , . Low-VCE(sat) Bipolar Transistor Series Toshiba power transistors feature a VCEO of 10 V to , ) Transistor + S-MOS 4 ( ) (@) ( ) ( ) TTA003 5 2SC5199 TTA0001 TTA0002 TTC015B , NPN(or PNP)×2 ( ) PW-Mini ( ) PW-Mold (&) 2-in-1 ( Transistor + Diode) Part number in


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bje 133 resistor

Abstract: No abstract text available
Text: transistor — ^ BLF244 i FEATURES N AMER PHILIPS/]) ISCRETE b*]E B PIN CONFIGURATION , N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT 123 flange envelope, with , bbS3T31 DOSTUMS 433 APX Product specification VHF power MOS transistor BLF244 N AMER , base to heatsink Tr* = 25 X ; P|„i = 38 W 0.3 K/W 128 » Philips Semiconductors t


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PDF BLF244 bje 133 resistor
2009 - 2AS1213

Abstract: sot-25 marking 2SA1213 XC62E XC62ER
Text: external transistor . Low power and high accuracy are achieved through CMOS process and laser trimming , (Performance depends on the Battery powered equipment external transistor characteristics.) Palmtops , 12.0 V VOUT Output Voltage VOUT VSS- 0.3 ~VIN+ 0.3 V CE/CE Input Voltage VCE VSS- 0.3 ~VIN+ 0.3 V EXT Output Voltage VEXT 12.0 V EXT Output Current IEXT 50 mA , =8.0V,VCE=VIN - - 0.6 A IOUT=50mA 4.0VVIN8.0V - 0.1 0.3 %V - - 8.0 V


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PDF XC62E ETR0311 2AS1213 sot-25 marking 2SA1213 XC62ER
1998 - Not Available

Abstract: No abstract text available
Text: High-Power Transistor . . . designed for general­purpose power amplifier and switching applications. · , AMPERE SILICON POWER TRANSISTOR 80 VOLTS 160 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ , for future use and best overall value. © Motorola, Inc. 1998 Motorola Bipolar Power Transistor , , TIME ( µs) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.2 0.3 tr RB 15 D1 + 7.0 V FOR CURVES OF , . Switching Times Test Circuit Figure 3. Turn­On Time 2 Motorola Bipolar Power Transistor Device Data


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PDF 2N5882/D 2N5882
2008 - transistor 2xw

Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
Text: -7-1 package. The device is as flexible as a discrete transistor and offers its integrated features for a very , Min. Values Typ. 3.0 3 6 10 14 0.1 0.1 1.2 - 0.3 Max. 4.0 V mA 1.8 Unit Note / Test Condition Supply , ICC-off Vctrl-on Vctrl-off µA µA µA V V VCCtyp 0.3 Target Data Sheet 6 Rev. 1.1 , Parameter Noise figure Testing circuit AC Characteristics, RF transistor measured in a testfixture in a , circuitry 2) Icq is the quiescent current flowing into RF-Out pin (collector of RF bipolar transistor


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PDF BGB707L7ESD transistor 2xw transistor table RF Bipolar Transistor smd rf transistor marking
1994 - BULD125KC

Abstract: electronic ballast with npn transistor
Text: BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations , (TOP VIEW) Diode trr Typically 1 µs q Tightly Controlled Transistor Storage Times q Voltage Matched Integrated Transistor and Diode q Characteristics Optimised for Cool Running q , anti-parallel diode plus transistor . The integrated diode has minimal charge coupling with the transistor , . By design, this new device offers a voltage matched integrated transistor and anti-parallel diode


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PDF BULD125KC O-220 BULD125KC electronic ballast with npn transistor
1995 - MOTOROLA TRANSISTOR TO-220

Abstract: 1N5825 221D 2N6107 AN1040 MJF6107 MSD6100
Text: © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 1 , #E69369, to 3500 VRMS Isolation · · · · · · PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS , Isolated Package Applications Power Transistor MJF6107 SEMICONDUCTOR TECHNICAL DATA Order this document by MJF6107/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data Figure 3. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.1 0.2 0.3 0.5 1


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PDF MJF6107/D* MJF6107/D MOTOROLA TRANSISTOR TO-220 1N5825 221D 2N6107 AN1040 MJF6107 MSD6100
1996 - MR918

Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
Text: 's MJH16006A TM Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are , Motorola Bipolar Power Transistor Device Data 1 2 Motorola Bipolar Power Transistor Device Data , 55°C 3 2 1 0.2 0.3 0.5 1 5 2 3 IC, COLLECTOR CURRENT (AMPS) 10 20 10 5 2 1 5 0.5 0.3 0.2 0.1 Figure 1. DC Current Gain 0.2 0.1 1 2 3 0.3 0.5 IC , 0.5 3A 5A 0.3 0.2 1A 0.1 0.1 1.5 1 IC/IB = 10 TJ = 25°C IC/IB = 10 TJ = 100


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PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
MPA92

Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Text: Philips Semiconductors Product specification VHF power MOS transistor TBLF245 PHILIPS , D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated , specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE D ■711062b 0043602 214 «PHIN , K/W ^th mb-h thermal resistance from mounting base to heatsink Tnfc = 25 °C; Ptol = 68 W 0.3 K/W


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PDF TBLF245 OT123 -SOT123 711002b BLF245 T-39-11 7110fl2b MPA92 68W* transistor 68w transistor SOT123 Package BH RV transistor International Power Sources P101 sot123 GZ22
1996 - AM503

Abstract: MJE210 MJH16006A MPF930 MR918 MTP12N10 MTP8P10 MUR105 P6302 MTP12N10 pin configuration
Text: 's MJH16006A TM Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are , . REV 4 © Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 2 Motorola Bipolar Power Transistor Device Data ÎÎÎ Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î , 0.2 0.3 0.5 1 5 2 3 IC, COLLECTOR CURRENT (AMPS) 10 20 10 5 2 1 5 0.5 0.3 0.2 0.1 Figure 1. DC Current Gain 0.2 0.1 1 2 3 0.3 0.5 IC, COLLECTOR CURRENT


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PDF MJH16006A/D MJH16006A MJH16006A/D* AM503 MJE210 MJH16006A MPF930 MR918 MTP12N10 MTP8P10 MUR105 P6302 MTP12N10 pin configuration
2007 - Not Available

Abstract: No abstract text available
Text: an external transistor . Low power and high accuracy are achieved through CMOS process and laser , external transistor characteristics.) ●Palmtops ●Reference voltage sources Maximum Output , VOUT Output Voltage VOUT VSS- 0.3 ~VIN+ 0.3 V CE/CE Input Voltage VCE VSS- 0.3 ~VIN+ 0.3 , ISS2 VIN=8.0V,VCE=VIN - - 0.6 μA IOUT=50mA 4.0V≦VIN≦8.0V - 0.1 0.3 , on which transistor is used. Please use a transistor with a low saturation voltage level and hFE


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PDF XC62E ETR0311
1995 - MR918

Abstract: MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
Text: 's MJH16006A TM Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are , . 1995 Motorola Bipolar Power Transistor Device Data 1 2 Motorola Bipolar Power Transistor , 55°C 3 2 1 0.2 0.3 0.5 2 3 1 5 IC, COLLECTOR CURRENT (AMPS) 10 20 10 5 2 1 5 0.5 0.3 0.2 0.1 Figure 1. DC Current Gain 0.2 0.1 1 2 3 0.3 0.5 IC , 0.5 3A 5A 0.3 0.2 1A 0.1 0.1 1.5 1 IC/IB = 10 TJ = 25°C IC/IB = 10 TJ = 100


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PDF MJH16006A/D MJH16006A MJH16006A/D* MR918 MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
2007 - XC62E

Abstract: sot-25 marking 2SA1213 XC62ER Transistor Catalog
Text: external transistor . Low power and high accuracy are achieved through CMOS process and laser trimming , (Performance depends on the Battery powered equipment external transistor characteristics.) Palmtops , VIN 12.0 V VOUT Output Voltage VOUT VSS- 0.3 ~VIN+ 0.3 V CE/CE Input Voltage VCE VSS- 0.3 ~VIN+ 0.3 V EXT Output Voltage VEXT 12.0 V EXT Output Current IEXT 50 , VIN=8.0V,VCE=VIN - - 0.6 A IOUT=50mA 4.0VVIN8.0V - 0.1 0.3 %V - -


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PDF XC62E ETR0311 sot-25 marking 2SA1213 XC62ER Transistor Catalog
2003 - MOC205-M

Abstract: MOC206-M MOC207-M MOC208-M MOC207M
Text: Corporation Page 4 of 10 4/10/ 03 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M , of 10 4/10/ 03 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M , /10/ 03 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M Package , 4/10/ 03 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M , Page 9 of 10 4/10/ 03 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M


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PDF MOC205-M MOC206-M MOC207-M MOC208-M E90700, MOC205V-M) MOC205-M MOC206-M MOC207-M MOC208-M MOC207M
pmi dac08

Abstract: DAC08
Text: L D E S C R IPT IO N The MAT- 03 dual monolithic PNP transistor offers excellent parametric , 0 1 3 5 4 7 ■MAT- 03 LOW NOISE, MATCHED, DUAL PN P TRANSISTOR T - 7 V -t> 9 'M to , typical 0.8nV/V Hz input noise voltage of the MAT- 03 transistor . The noise contribution of the OP , contributions from each transistor in the MAT- 03 , the output is divided by \/2 to determine a single , 0001355 1 ■MAT- 03 LOW NOISE, MATCHED, D UAL PNP TRANSISTOR GaAsP LED as a reference. The


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PDF MAT-03 100pV 190MHz DAC-08, 992mA 008mA pmi dac08 DAC08
2014 - MJE13003

Abstract: MJE13003 TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR , 1 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR ORDERING INFORMATION Ordering , 2 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS , W W W W °C °C 3 of 9 QW-R204-004.T MJE13003  NPN SILICON TRANSISTOR , Waveforms  NPN SILICON TRANSISTOR +10.3 V 25μS 0 -8.5V tr, tf<10ns Duty Cycly=1.0% RB


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PDF MJE13003 290ns QW-R204-004 MJE13003 MJE13003 TO-92
cs1w-cn226

Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
Text: ­8ER 66 8 transistor outputs PNP, 24 VDC, 0.3 A FUJITSU connector CPM2C­8ET1C 66 8 transistor outputs PNP, 24 VDC, 0.3 A MIL connector CPM2C­8ET1M 8 transistor outputs NPN, 24 VDC, 0.3 A FUJITSU connector CPM2C­8ETC 8 transistor outputs NPN, 24 VDC, 0.3 A MIL , 24 VDC MIL connector CPM2C­16EDM 16 transistor outputs PNP, 24 VDC, 0.3 A FUJITSU connector CPM2C­16ET1C 16 transistor outputs PNP, 24 VDC, 0.3 A MIL connector CPM2C


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PDF space/6000 TS001 TS101 Pt100 Pt100, JPt100 SRT21 cs1w-cn226 OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
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